SK25GD12T4ET ' )* +& Absolute Maximum Ratings Symbol Conditions IGBT $%- . ' )* + . ' 02* + 45 # $%- ; 0)11 $ Units 0)11 $ 32 ' 21 + 31 2* 7 )1 $ . ' 0*1 + 01 < ' )* + 31 ' 21 + )* 2* 0=1 45' 3 6 $ ' 811 $9 $% : 0* $9 Values ' )* + $%- SEMITOP(R) 3 # , Inverse Diode IGBT Module SK25GD12T4ET . ' 02* + 45 45' 3 6 -5 # ' 01 9 !, !( . ' 0*1 + Module >45-? Target Data (. Features ! " # ! Typical Applications* Remarks $%&! & $ ' # ( (! $ & 0 A $% ' $%& ' 1&8* %- $% ' 1 $& $% ' $%- + @1 AAA B0)* + )*11 $ ' )* +& Characteristics Symbol Conditions IGBT $%>? @1 AAA B02* min. typ. * *&8 . ' )* + # , max. Units =&* $ 1&11) . ' 0)* + %- $% ' 1 $& $% ' )1 $ . ' )* + 0)1 . ' 0)* + $%1 % $%>!? ' )* & $% ' 0* $ 0&0 0&3 $ . ' 0*1 + 0 0&) $ . ' )*+ 31 C . ' 0*1+ *1 C . ' )*+ #(A . ' 0*1+ #(A > ? % > ,,? , % )&1* )&)* )&* $ $ 1&18* $%'@2$AAAB0*$ 032&* 4 ' 0G C H ' )8)* H< 4 ,, ' 0G C H ' )8)* H< )) 0G&* )&)2 )88 22&* I )&2 I 0&30 JH $% ' )*& $% ' 1 $ ,, 4>.@? 0&8* 0&3 1&00* , ' 0 5DE F . ' )* + $% ' 0* $ # $ ' =11$ ' )* . ' 0*1 + $%' @2HB0*$ GD-ET 1 27-05-2009 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GD12T4ET Characteristics Symbol Conditions Inverse Diode $ ' $% ' )* 9 $% ' 1 $ min. . ' )* + #(A . ' 0*1 + $1 (R) SEMITOP 3 IGBT Module SK25GD12T4ET typ. max. Units )& )&=) $ )&* )&8 $ . ' )* + 0&3 0&* $ . ' 0*1 + 1&G 0&0 $ . ' )* + * . ' 0*1 + =) =8 . ' 0*1 + 30&* 0&0* < #(A C C 445 F ' )* H ' )8)* H< % $' =11$ 0&)8 I 4>.@? # 0&G0 JH 5 ! K )&)* )&* " 31 G37*L C Temperature sensor 4011 '011+ >4)*'*KC? Target Data Features ! " # ! Typical Applications* This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. Remarks $%&! & $ ' # ( (! GD-ET 2 27-05-2009 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GD12T4ET Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (Ts) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 27-05-2009 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GD12T4ET Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 27-05-2009 DIL http://store.iiic.cc/ (c) by SEMIKRON SK25GD12T4ET ! *) >- ! , ! *) 5 # ! #! #M ) ? @% 27-05-2009 DIL http://store.iiic.cc/ (c) by SEMIKRON