AT93C46B
1
Features
x16 Organization Utilizing “No Connects” for Pins 6 and 7
Low Voltage and Standard Voltage Operation
5.0 (VCC = 4.5V to 5.5V)
2.7 (VCC = 2.7V to 5.5V)
2.5 (VCC = 2.5V to 5.5V)
3-Wire Serial Interface
2 MHz Clock Rate (5V) Compatibility
Self-Timed Write Cycle (10 ms max)
High Reliability
Endurance: 1 Million Cycles
Data Retention: 100 Years
Automotive Grade and Extended Temperature Devices Available
8-Pin PDIP and JEDEC SOIC Packages
Description
The AT93C46B provides 1024 bits of serial electrically erasable programmable read
only memory (EEPROM) organized as 64 words of 16 bits each. The device is opti-
mized for use in many industrial and commerc ial applications where low power and
low voltag e operation ar e es sen tia l. The AT 93C4 6B is avai lable in spac e sa vi ng 8- pi n
PDIP and 8-pin JEDEC packages.
The AT93C46B is enabled through the Chip Select pin (CS), and access ed via a 3-
wire serial interface consisting of Data Input (DI), Data Output (DO), and Shift Clock
(SK). Upon receiving a READ instruction at DI, the address is decoded and the data is
clocked out serially on the data output pi n DO. The WRITE cycle is compl etely self-
timed and no separate ERASE cycle is required before WRITE. The WRITE cycle is
only enabled when the part is in the ERASE/WRITE ENABLE state. When CS is
brought “high” following the initiation of a WRITE cycle, the DO pin outputs the
READY/BUSY status of the part.
The AT93C46B is available in 4.5V to 5.5V, 2.7V to 5.5V, and 2.5V to 5.5V versions.
0917A-A–11/97
3-Wire
Serial
E2PROMs
1K (64 x 16)
AT93C46B
8-Pin PDIP
1
2
3
4
8
7
6
5
CS
SK
DI
DO
VCC
NC
NC
GND
8-Pin SOIC
1
2
3
4
8
7
6
5
CS
SK
DI
SO
VCC
NC
NC
GND
Pin Configuration
Pin Name Function
CS Chip Select
SK Serial Data Cloc k
DI Serial Data Input
DO Serial Data Output
GND Ground
VCC Power Supply
NC No Connect
AT93C46B
2
Absolute Maximum Ratings*
Bloc k Diagram
Operating Temperature.........................-55°C to +125°C*NOTICE: Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device . This is a stress ra ting onl y and
funct ion al ope ration of the device at these or an y
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditi ons f or e xtended p eriods ma y af fect dev ice
reliability.
Storage Temperature............................-65°C to +150°C
Voltage on Any Pin
with Respect to Ground...........................-1.0V to +7.0V
Maximum Operating Voltage.................................6.25V
DC Output Current ..............................................5.0 mA
AT93C46B
3
Pin Capacitance(1)
Applicable over recommended operating range from TA = 25°C, f = 1.0 MHz, VCC = +5.0V (unless otherwise noted).
Note: 1. This parameter is characterized and is not 100% tested.
DC Characteristics
Applicable over recommended operating range from: TAI = -40°C to +85°C, VCC = +2.5V to +5.5V,
TAC = 0°C to +70°C, VCC = +2.5V to +5.5V (unless otherwise noted).
Note: 1. VIL and VIH max are reference only and are not tested.
Test Conditions Max Units Conditions
COUT Out put Ca pa cit anc e ( DO) 5 pF VOUT = 0V
CIN Input Capacitance (CS, SK, DI) 5 pF VIN = 0V
Symbol Parameter Test Conditi on Min Typ Max Units
VCC2 Supply Voltage 2.5 5.5 V
VCC3 Supply Voltage 2.7 5.5 V
VCC4 Supply Voltage 4.5 5.5 V
ICC Supply Current VCC = 5.0V READ at 1.0 MHz 0.5 2.0 mA
WRITE at 1.0 MHz 0.5 2.0 mA
ISB1 Standby Current VCC = 2.5V CS = 0V 14.0 20.0 µA
ISB2 Standby Current VCC = 2.7V CS = 0V 14.0 20.0 µA
ISB3 Standby Current VCC = 5.0V CS = 0V 35.0 50.0 µA
IIL Input Leakage VIN = 0V to VCC 0.1 1.0 µA
IOL Output Leakage VIN = 0V to VCC 0.1 1.0 µA
VIL1(1)
VIH1(1) Input Low Voltage
Input High Voltage 4.5V VCC 5.5V -0.1
2.0 0.8
VCC + 1 V
VIL2(1)
VIH2(1) Input Low Voltage
Input High Voltage 1.8V VCC 2.7V 0.0
VCC x 0.7 VCC x 0.3
VCC + 1 V
VOL1
VOH1
Output Low Voltage
Output High Voltage 4.5V VCC 5.5V IOL = 2.1 mA 0.4 V
IOH = -0.4 mA 2.4 V
VOL2
VOH2
Output Low Voltage
Output High Voltage 1.8V VCC 2.7V IOL = 0.15 mA 0.2 V
IOH = -100 µAV
CC - 0.2 V
AT93C46B
4
AC Characteristics
Applicable over recommended operating range from TA = -40°C to + 85°C, VCC = +2.5V to + 5.5V,
CL = 1 TTL Gate and 100 pF (unless otherwise noted).
Symbol Parameter Test Condition Min Typ Max Units
fSK SK Clock Frequency 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
0
0
0
2
1
0.5 MHz
tSKH SK High Time 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tSKL SK Low Time 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tCS Minimum CS Low Time 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tCSS CS Setup Time Relative to SK 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
50
50
100 ns
tDIS DI Setup Time Relative to SK 4.5V VCC 5.5 V
2.7V VCC 5.5V
2.5V VCC 5.5V
100
100
200 ns
tCSH CS Hold Time Relative to SK 0 ns
tDIH DI Hold Time Relative to SK 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
100
100
200 ns
tPD1 Output Delay to ‘1’ AC Test 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tPD0 Output Delay to ‘0’ AC Test 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tSV CS to Status Valid AC Test 4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
250
250
500 ns
tDF CS to DO in High Impedance AC Test
CS = VIL
4.5V VCC 5.5V
2.7V VCC 5.5V
2.5V VCC 5.5V
100
100
200 ns
tWP Write Cycle Time 0.1 10 ms
4.5V VCC 5.5 V 1 ms
Endurance 25°C, VCC = 5.0V, Page Mode 1M Cycles
AT93C46B
5
Instruction Set for the AT93C46B
Instruction SB Op Code Address
(x16) Comments
READ 1 10 A5 - A0Reads data stored in memory, at specified address.
EWEN 1 00 11XXXX Write enable must precede all programming modes.
ERASE 1 11 A5 - A0Erase memory location An - A0.
WRITE 1 01 A5 - A0Writes memory location An - A0.
ERAL 1 00 10XXXX Erases all memory locations. Valid only at VCC = 4.5V to 5.5V.
WRAL 1 00 01XXXX Writes all memory locations. Valid only at VCC = 4.5V to 5.5V.
EWDS 1 00 00XXXX Disables all programming instr uctions.
AT93C46B
6
Functional Description
The AT93C46B is accessed via a simple and versatile
three-wire serial communication interface. Device opera-
tion is contro lled by seven in structi ons issu ed by the host
processor. A valid instruction starts with a rising edge of CS
and cons ists of a Sta rt Bit (log ic ‘1’) fo llowed by the appro-
priate Op Code and the desired memory Address location.
READ (READ): The Read (READ) instruction contains
the Addr ess c ode fo r th e m emo ry loc at ion to b e r ea d. Aft er
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the ris-
ing edges of serial clock SK. It should be noted that a
dummy bit (logic ‘0’) precedes the 16 bit data output string.
ERASE/WRITE (EWEN): To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, program-
ming remains enabled until an Erase/Write Disable
(EWDS) instruc tion is execute d or VCC power is removed
from the part.
ERASE (ERASE): The Erase (ERASE) instruction pro-
grams all bits in the specified memory location to the logical
‘1’ state. The self-timed erase cycle starts once the ERASE
instruction and address a re decoded. The DO pi n outputs
the READ Y / BUSY status of the part if CS is brough t high
after being kept low for a minimum of 250 ns (tCS). A lo gic
‘1’ at pin DO indicates that the selected memory location
has been er ased, an d the part is ready for anothe r instruc-
tion.
WRITE (WRITE): The Write (WRITE ) instr uctio n c on tai ns
the 16 bits of data to be written into the specified memory
location. The self-timed programming cycle starts after the
last bit of data is received at serial data input pin DI. The
DO pin outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(tCS). A l ogic ‘0’ at DO in dicate s th at progr amming is sti ll in
progress. A logic ‘1’ indicates that the memory l ocation at
the specified address has been written with the data pat-
tern contained in the instruction and the part is ready for
further instructions.
ERASE ALL (ERAL): The Erase All (ERAL) instruction
programs every bit in the memory array to the logic ‘1’ state
and is pr imar ily u sed for te sting purpo ses. Th e DO pi n out-
puts th e READ Y/BU SY statu s of t he par t if CS is br ought
high after being kept low for a minimum of 250 ns (tCS). The
ERAL instruction is valid only at VCC = 5.0V ± 10%.
WRITE ALL (WRAL): T he Write All (WRAL) instruction
programs all memory locations with the data patterns spec-
ified in the instruction. The DO pin outputs the
READY/ BU SY stat us of the p art i f CS is brou ght h igh afte r
being k ept low fo r a mini mum of 25 0 ns (t CS). The WRAL
instruction is valid only at VCC = 5.0V ± 10%.
ERASE/W RITE DISABLE (EWDS): To protect against
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all p rogramming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
Synchronous Data Timing
Note: 1. This is the minimum SK period.
AT93C46B
7
Organization Key for Timing Diagrams
READ Timing
EWEN Timing
EWDS Timing(1)
Note: 1. Requires a minimum of nine clock cycles.
I/O AT93C46B
(x16)
ANA5
DND15
AT93C46B
8
WRITE Timing
WRAL Timing(1)(2)
Notes: 1. Valid only at VCC = 4.5V to 5.5V.
2. Requires a minimum of nine clock cycles.
ERASE Timing
AT93C46B
9
TERAL Timing(1)
Note: 1. Valid only at VCC = 4.5V to 5.5V.
AT93C46B
10
Order ing In formation
tWP (max)
(ms) ICC (max)
(µA) ISB (max)
(µA) fMAX
(kHz) Ordering Code Package Operation Range
10 2000 50.0 2000 AT93C46B-10PC
AT93C46B-10SC 8P3
8S1 Commercial
(0°C to 70°C)
10 800 20.0 1000 AT93C46B-10PC-2.7
AT93C46B-10SC-2.7 8P3
8S1 Commercial
(0°C to 70°C)
10 600 20.0 500 AT93C46B-10PC-2.5
AT93C46B-10SC-2.5 8P3
8S1 Commercial
(0°C to 70°C)
10 2000 50.0 2000 AT93C46B-10PI
AT93C46B-10SI 8P3
8S1 Industrial
(-40°C to 85°C)
10 800 20.0 1000 AT93C46B-10PI-2.7
AT93C46B-10SI-2.7 8P3
8S1 Industrial
(-40°C to 85°C)
10 600 20.0 500 AT93C46B-10PI-2.5
AT93C46B-10SI-2.5 8P3
8S1 Industrial
(-40°C to 85°C)
Package Type
8P3 8 Lead, 0.300" Wide, Plastic Dual Inline Package (PDIP)
8S1 8 Lead, 0.150" Wide, Plastic Gull Wing Small Outline (JEDEC SOIC)
Options
Blank Standard Device (4.5V to 5.5V)
-2.7 Low Voltage (2.7V to 5.5V)
-2.5 Low Voltage (2.5V to 5.5V)