
AT93C46B
6
Functional Description
The AT93C46B is accessed via a simple and versatile
three-wire serial communication interface. Device opera-
tion is contro lled by seven in structi ons issu ed by the host
processor. A valid instruction starts with a rising edge of CS
and cons ists of a Sta rt Bit (log ic ‘1’) fo llowed by the appro-
priate Op Code and the desired memory Address location.
READ (READ): The Read (READ) instruction contains
the Addr ess c ode fo r th e m emo ry loc at ion to b e r ea d. Aft er
the instruction and address are decoded, data from the
selected memory location is available at the serial output
pin DO. Output data changes are synchronized with the ris-
ing edges of serial clock SK. It should be noted that a
dummy bit (logic ‘0’) precedes the 16 bit data output string.
ERASE/WRITE (EWEN): To assure data integrity, the
part automatically goes into the Erase/Write Disable
(EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before
any programming instructions can be carried out. Please
note that once in the Erase/Write Enable state, program-
ming remains enabled until an Erase/Write Disable
(EWDS) instruc tion is execute d or VCC power is removed
from the part.
ERASE (ERASE): The Erase (ERASE) instruction pro-
grams all bits in the specified memory location to the logical
‘1’ state. The self-timed erase cycle starts once the ERASE
instruction and address a re decoded. The DO pi n outputs
the READ Y / BUSY status of the part if CS is brough t high
after being kept low for a minimum of 250 ns (tCS). A lo gic
‘1’ at pin DO indicates that the selected memory location
has been er ased, an d the part is ready for anothe r instruc-
tion.
WRITE (WRITE): The Write (WRITE ) instr uctio n c on tai ns
the 16 bits of data to be written into the specified memory
location. The self-timed programming cycle starts after the
last bit of data is received at serial data input pin DI. The
DO pin outputs the READY/BUSY status of the part if CS is
brought high after being kept low for a minimum of 250 ns
(tCS). A l ogic ‘0’ at DO in dicate s th at progr amming is sti ll in
progress. A logic ‘1’ indicates that the memory l ocation at
the specified address has been written with the data pat-
tern contained in the instruction and the part is ready for
further instructions.
ERASE ALL (ERAL): The Erase All (ERAL) instruction
programs every bit in the memory array to the logic ‘1’ state
and is pr imar ily u sed for te sting purpo ses. Th e DO pi n out-
puts th e READ Y/BU SY statu s of t he par t if CS is br ought
high after being kept low for a minimum of 250 ns (tCS). The
ERAL instruction is valid only at VCC = 5.0V ± 10%.
WRITE ALL (WRAL): T he Write All (WRAL) instruction
programs all memory locations with the data patterns spec-
ified in the instruction. The DO pin outputs the
READY/ BU SY stat us of the p art i f CS is brou ght h igh afte r
being k ept low fo r a mini mum of 25 0 ns (t CS). The WRAL
instruction is valid only at VCC = 5.0V ± 10%.
ERASE/W RITE DISABLE (EWDS): To protect against
accidental data disturb, the Erase/Write Disable (EWDS)
instruction disables all programming modes and should be
executed after all p rogramming operations. The operation
of the READ instruction is independent of both the EWEN
and EWDS instructions and can be executed at any time.
Synchronous Data Timing
Note: 1. This is the minimum SK period.