BFQ67W - NXP - Product.Network

DATA SH EET

Product specification September 1995

DISCRETE SEMICONDUCTORS

BFQ67W

NPN 8 GHz wideband transistor

September 1995 2

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

FEATURES

High power gain

Low noise figure

High transition frequency

Gold metallization ensures

excellent reliability

SOT323 envelope.

DESCRIPTION

NPN transis tor in a plastic SOT323

envelope.

It is designed for wideband

applications such as satellite TV

tuners and RF portable

communications equipment up to

2GHz.

PINNING

PIN DESCRIPTION

Code: V2

1 base

2emitter

3 collector

Fig.1 SOT323.

handbook, 2 columns 3

MBC870

Top view

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maxi mum Sys tem (IEC 134).

Note

1. Tsis the temperature at the sold ering point of the collector tab.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter 20 V

VCEO collector-emitter voltage open base 10 V

ICDC collector current 50 mA

Ptot total power dissipation up to Ts=118 C; note 1 300 mW

hFE DC current gain IC=15 mA; V

CE =5 V; T

j=25 C60 100 

fTtransition frequenc y IC=15 mA; V

CE =8 V; f =2 GHz;

Tamb =25 C8GHz

GUM maximum unilateral power gain Ic=15 mA; V

CE =8 V; f =1 GHz;

Tamb =25 C13 dB

F noise figure Ic=5 mA; V

CE =8 V; f=1 GHz 1.3 dB

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter 20 V

VCEO collector-emitter voltage open base 10 V

VEBO emitter-base voltage open collector 2.5 V

ICDC collector current 50 mA

Ptot total power dissipation up to Ts=118 C; note 1 300 mW

Tstg storage temperature 65 150 C

Tjjunction temperature 175 C

September 1995 3

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

THERMAL RESIST ANCE

Note

1. Tsis the temperature at the sold ering point of the collector tab.

CHARACTERISTICS

Tj=25 C, unless otherwise specified.

Note

1. GUM is the maximum unilateral power gain, assuming S12 is zero and

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

Rth j-s thermal resistance from junction to

soldering point up to Ts=118 C; note 1 190 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collecto r cut-off current IE=0; V

CB =5 V 50 nA

hFE DC current ga in IC=15 mA; V

CE =5 V 60 100 

Cccollector capacitance I E=i

e= 0; VCB =8 V; f=1 MHz 0.7 pF

Ceemitter capacitance IC=i

c= 0; VEB =0.5 V; f=1 MHz 1.3 pF

Cre feedback capacitance IC=0; V

CB =8 V; f=1 MHz 0.5 pF

fTtransition fr eq uency IC=15 mA; V

CE =8 V; f=2 GHz;

Tamb =25 C8GHz

GUM maximum unilater al power gain

(note 1) IC=15 mA; V

CE =8 V; f=1 GHz

Tamb =25 C13 dB

IC=15 mA; V

CE =8 V; f=2 GHz;

Tamb =25 C8dB

F noise figure s=opt;I

C= 5 mA; VCE =8 V;

f=1GHz 1.3 dB

s=opt;I

C=15 mA; V

CE =8 V;

f=1GHz 2dB

s=opt;I

C= 5 mA; VCE =8 V;

f=2GHz 2.2 dB

IC=5 mA; V

CE =8 V;

f=2 GHz; Z

s=60 

2.5 dB

s=opt;I

C=15 mA; V

CE =8 V;

f=2GHz 2.7 dB

IC=5 mA; V

CE =8 V;

f=2 GHz; Z

s=60 

3dB

GUM 10 log S21 2

11 2

–1S

22 2

–

---------------------------------------------------------- dB.=

September 1995 4

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

Fig.2 Power derating curve.

handbook, halfpage

0 50 100 200

400

300

100

200

MRC045- 1

150

Ptot

(mW)

Ts(oC)

Fig.3 DC current gain as a fu nction of collector

current.

VCE =5 V; T

j=25 C.

handbook, halfpage

120

020 40

MBB301

I (mA)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

IC=0; f=1 MHz.

handbook, halfpage

0.2

0.4

0.6

0.8

04812

MRC039

(pF)

V (V)

Cre

Fig.5 Transition frequency as a function of

collector current.

VCE = 8 V; f = 2 GHz; Tamb =25 C.

handbook, halfpage

01020 40

MBB303

30 I (mA)

(GHz)

f10

September 1995 5

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

In Figs 6 to 9, GUM = maximum unilateral power gain ;

MSG = maximum stable gain; Gmax = ma ximum availa ble

gain.

Fig.6 Gain as a function of collector current.

VCE = 8 V; f = 1 GHz; Tamb =25 C.

handbook, halfpage MRC042

0 5 10 15 20 25 30 35

MSG

Gmax

gain

(dB)

IC(mA)

GUM

Fig.7 Gain as a function of frequency.

IC=5 mA; V

CE =8 V; T

amb =25 C.

handbook, halfpage

10−210−1110

f (GHz)

MRC040

MSG

GUM

Gmax

gain

(dB)

Fig.8 Gain as a function of frequency.

IC=15 mA; V

CE =8 V; T

amb =25 C.

handbook, halfpage MRC041

10−210−1110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

Fig.9 Gain as a function of frequency.

IC=30 mA; V

CE =8 V; T

amb =25 C.

handbook, halfpage

MRC043

10−210−1110

f (GHz)

MSG

GUM

Gmax

gain

(dB)

September 1995 6

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

Fig.10 Minimum noise figure as a function of

collector current.

VCE =8 V; f=1 GHz.

handbook, halfpage MRC044

11010

IC(mA)

(dB)

handbook, full pagewidth

MRC046

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

Fmin = 1.5 dB

F = 2 dB

F = 2.5 dB

F = 3 dB

opt

Fig.11 Noise circle.

IC=5 mA; V

CE =8 V;

f = 1 GHz; Zo=50 .

September 1995 7

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

Fig.12 Common emitter input reflection coefficient (S11).

IC=15 mA; V

CE =8 V; Z

o=50 .

handbook, full pagewidth

MRC047

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2

3 GHz

0.5 1 2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

40 MHz

Fig.13 Common emitter forward transmission coefficient (S21).

IC=15 mA; V

CE =8 V.

handbook, full pagewidth

MRC048

180°

135°

90°

45°

0°

−45°

−90°

−135°

50 40 30 20 10 3 GHz

40 MHz

September 1995 8

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

Fig.14 Common emitter reverse trans m ission coefficient (S12).

IC=15 mA; V

CE =8 V.

handbook, full pagewidth

MRC049

180°

135°

90°

45°

0°

−45°

−90°

−135°

0.5 0.4 0.3 0.2 0.1

3 GHz

40 MHz

Fig.15 Common emitter output refle ction coefficient (S22).

IC=15 mA; V

CE =8 V; Z

o=50 .

handbook, full pagewidth

MRC050

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 1 2 5

180°

135°

90°

45°

0°

−45°

−90°

−135°

3 GHz

40 MHz

September 1995 9

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface-mounted package; 3 leads SOT323

04-11-04

06-03-16

September 1995 10

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completin g a d esign.

2. The product status of device(s) described in this documen t may have changed since this document wa s published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for product

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the pr oduct specification.

DEFINITIONS

Product specification  The information and da ta

provided in a Product data she et shall define the

specification of the product as agreed between NXP

Semiconductors and its custo m er, unless NXP

Semiconductors and cus to mer have explicitly agreed

otherwise in writing. In no event however, shall an

agreement be valid in which th e NXP Semiconductors

product is deemed to offer functions and qualities beyond

those described in the Product data sheet.

DISCLAIMERS

Limited warranty and liability  Information in this

document is believed to be accurate and reliable.

However, NXP Semiconduc tors does not give any

representations or warranties, expressed or implied, as to

the accuracy or completeness of such information and

shall have no liability for the consequences of use of such

information.

In no event shall NXP Semiconductors be liable for any

indirect, incidental, punitive, special or consequential

damages (including - without limitation - lost profits, lost

savings, busin es s inte rru ption, costs related to the

removal or replacement of any products or rework

charges) whether or not such damages are based on tort

(including negligence), warranty, breach of contract or any

other legal theory.

Notwithstanding any damages that customer might incur

for any reason whatsoever, NXP Semiconductors’

aggregate and cumulative liability towards customer for

the products described herein shall be limited in

accordance with the Terms and conditions of comme rcial

sale of NXP Semiconductors.

Right to make changes  NXP Semiconductors

reserves the right to make changes to information

published in this document, including without limitation

specifications and prod uct descriptions, at any time and

without notice. This document supersedes and replaces all

information su pplied prior to the publica t ion hereof.

Suitability for use  NXP Semiconductors products are

not designed, authorized or warranted to be suitable for

use in life support, life-critical or safety-critical systems or

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to res ult in personal injury, deat h or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductor s pr od ucts in such equipment or

application s and therefore such incl usion and/or use is at

the customer’s own risk.

Applications  Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of

their applications and products using NXP

Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole

responsibility to determine whether the NXP

Semiconductors pro du ct is su itable and fit for the

customer’s applications and products planned, as well as

for the planned application and use of custo m er’s third

party customer(s). Customers should provide appropriate

design and opera ting safeguards to minimize the risks

associated with their ap plications and pr oducts.

September 1995 11

NXP Semiconductors Product specification

NPN 8 GHz wideband transistor BFQ67W

NXP Semiconductors does not accept any liability related

to any default, damage, cost s or problem which is based

on any weakness or default in the customer’s applications

or products, or the applic ation or use by customer’s third

party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and

products using NXP Semic on ductors products in order to

avoid a default of the app lications and the products or of

the application or use by cust omer’s third party

customer(s). NXP does not accept any liability in this

respect.

Limiting values  Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) will cause permanent damage to

the device. Limiting values are stress ra tings only and

(proper) operat ion of the device at these or any other

conditions above those given in the Recommende d

operating conditions section (if present) or the

Characteristics sections of this document is not warranted.

Constant or repeated exposure to limiting values will

permanently and irreversibly affect the qua l ity and

reliability of the device.

Terms and conditions of commercial sale  NXP

Semiconductors products are sold subject to the genera l

terms and conditio ns of commercial sale, as published at

http://www.nxp.com/profile/terms, unless ot herwise

agreed in a valid written individual agreement. In cas e an

individual agreeme nt is co nc luded only the terms and

conditions of the resp ective agreement shall app ly. NXP

Semiconductors hereby expressly objects to applying the

customer’s general terms and conditions with regard to the

purchase of NXP Semicon ductors products by cust ome r.

No offer to sell or license  Nothing in this document

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described herein may be subject to export control

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national authorities.

Quick refer ence data  The Quick reference data is an

extract of th e product data given in the Li miting values and

Characteristics sections of this document, an d as such is

not complete, exhaus tive or legally binding.

Non-automotive qualified products  Unless this data

sheet expressly states that this specific NXP

Semiconductors product is au tomotive qualified, the

product is not suitable fo r automotive use. It is neither

qualified nor te sted in accorda nce with automot ive testing

or application requirements. NXP Semiconductors accepts

no liability for inclusion and/or use of non-automotive

qualified prod ucts in automotive equipment or

applications.

In the event that customer uses the product for design-in

and use in automotive applications to automotive

specifications and standards, customer (a) shall use the

product without NXP Semiconductors’ warranty of the

product for suc h aut omo tive applications, use and

specifications, and (b) whenever customer uses the

product for automotive applications beyond NXP

Semiconductors’ specifications such use shall be so lely at

customer’s own ris k, an d (c) customer fully indemnifi es

NXP Semiconductors for an y liability, damages or failed

product clai ms r esult ing fr om cus to mer d esi gn an d us e of

the product for automotive ap plic ations beyond NXP

Semiconductors ’ st andard warran ty and NXP

Semiconductors’ product specifications.

NXP Semiconductors

provides High Performance Mixed Signal and Standard Product

solutions that leverage its leading RF, Analog, Power Management,

Interface, Security and Digital Processing expertise

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addr esses send e- mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this documen t d oes not fo rm p ar t o f an y q uot ation or co ntract, is believed to be accurate a nd re liable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal

definitions and disclaimer s. No cha ng es were made to the technical content, except for package outline

drawings which were updated to the latest version.

Printed in The Netherlands R77/03/pp12 Date of releas e: September 1995