LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 LM48311 BoomerTM Audio Power Amplifier Series Ultra-Low EMI, Filterless, 2.6W, Mono, Class D Audio Power Amplifier with E2S Check for Samples: LM48311 FEATURES DESCRIPTION * The LM48311 is a single supply, high efficiency, mono, 2.6W, filterless switching audio amplifier. The LM48311 features Texas Instruments' Enhanced Emissions Suppression (E2S) system, that features a unique patent-pending ultra low EMI, spread spectrum, PWM architecture, that significantly reduces RF emissions while preserving audio quality and efficiency. The E2S system improves battery life, reduces external component count, board area consumption, system cost, and simplifying design. 1 23 * * * * * * * * * Passes FCC Class B Radiated Emissions with 20 Inches of Cable E2S System Reduces EMI while Preserving Audio Quality and Efficiency Output Short Circuit Protection with AutoRecovery No output Filter Required Internally Configured Gain (6dB) Low power Shutdown Mode Minimum External Components "Click and Pop" Suppression Micro-Power Shutdown Available in Space-Saving DSBGA Package APPLICATIONS * * * Mobile Phones PDAs Laptops KEY SPECIFICATIONS * * * * * * Efficiency at 3.6V, 400mW into 8 85% (Typ) Efficiency at 5V, 1W into 8 88% (Typ) Quiescent Power Supply Current at 5V 3.1mA Power Output at VDD = 5V, RL = 4 - THD+N 10% 2.6W (Typ) - THD+N 1% 2.1W (Typ) Power Output at VDD = 5V, RL = 8 - THD+N 10% 1.6W (Typ) - THD+N 1% 1.3W (Typ) Shutdown Current 0.01A (Typ) The LM48311 is designed to meet the demands of portable multimedia devices. Operating from a single 5V supply, the device is capable of delivering 2.6W of continuous output power to a 4 load with less than 10% THD+N. Flexible power supply requirements allow operation from 2.4V to 5.5V. The LM48311 features both a spread spectrum modulation scheme, and an advanced, patented edge rate control (ERC) architecture that significantly reduces emissions, while maintaining high quality audio reproduction (THD+N = 0.03%) and high efficiency ( = 88%). The LM48311 features high efficiency compared to conventional Class AB amplifiers, and other low EMI Class D amplifiers. When driving and 8 speaker from a 5V supply, the device operates with 88% efficiency at PO = 1W. The gain of the LM48311 is internally set to 6dB, further reducing external component count. A low power shutdown mode reduces supply current consumption to 0.01A. Advanced output short circuit protection with autorecovery prevents the device from being damaged during fault conditions. Superior click and pop suppression eliminates audible transients on powerup/down and during shutdown. 1 2 3 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Boomer is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2009-2013, Texas Instruments Incorporated LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com Typical Application +2.4V to +5.5V CS CS VDD PVDD SD CIN IN+ OUTA MODULATOR H-BRIDGE IN- OUTB CIN PGND GND Figure 1. Typical Audio Amplifier Application Circuit Connection Diagram A IN+ SD OUTA B VDD PVDD PGND C IN- GND OUTB 1 2 3 Figure 2. DSBGA Package 1.539mm x 1.565mm x 0.6mmTop View See Package Number YZR0009 PIN DESCRIPTIONS - BUMP DESCRIPTION 2 Pin Name A1 IN+ Non-Inverting Input Description A2 SD Active Low Shutdown Input. Connect to VDD for normal operation. A3 OUTA B1 VDD B2 PVDD H-Bridge Power Supply Non-Inverting Output Power Supply B3 PGND Power Ground C1 IN- Inverting Input C2 GND Ground C3 OUTB Inverting Output Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) (3) Supply Voltage 6.0V -65C to +150C Storage Temperature - 0.3V to VDD +0.3V Input Voltage Power Dissipation (4) Internally Limited ESD Rating (5) 2000V ESD Rating (6) 200V Junction Temperature Thermal Resistance 150C JA 70C/W Soldering Information See AN-1112 (SNVA009) "DSBGA Wafer Level Chip Scale Package." (1) (2) (3) (4) (5) (6) "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditionsindicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, JA, and the ambient temperature, TA. The maximum allowable power dissipation is PDMAX = (TJMAX- TA) / JA or the number given in Absolute Maximum Ratings, whichever is lower. Human body model, applicable std. JESD22-A114C. Machine model, applicable std. JESD22-A115-A. Operating Ratings (1) (2) Temperature Range TMIN TA TMAX Supply Voltage (VDD, PVDD) (1) (2) -40C TA +85C 2.4V VDD 5.5V "Absolute Maximum Ratings" indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditionsindicate conditions at which the device is functional and the device should not be operated beyond such conditions. All voltages are measured with respect to the ground pin, unless otherwise specified. The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 3 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com Electrical Characteristics VDD = PVDD = 5V (1) (2) The following specifications apply for AV = 6dB, RL = 8, f = 1kHz, unless otherwise specified. Limits apply for TA = 25C. LM48311 Symbol Parameter Conditions Min (3) VDD Supply Voltage Range VIN = 0 IDD Quiescent Power Supply Current VIN = 0, RL = VDD = 3.6V VDD = 5V ISD Shutdown Current Shutdown enabled VOS Differential Output Offset Voltage VIN = 0 VIH Logic Input High Voltage VIL Logic Input Low Voltage CMVR Common Mode Input Voltage Range TWU Wake Up Time fSW Switching Frequency AV Gain RIN Input Resistance RSD Input Resistance (SD) PO Output Power Total Harmonic Distortion + Noise (3) Units (Limits) 5.5 V 2.7 3.1 3.4 3.9 mA mA 0.01 1.0 A 1 3 mV (4) 2.4 -3 1.4 V 0 SYNC_IN = VDD (Spread Spectrum) 5 17 0.4 V VDD-0.25 V 7.5 ms 30030 kHz 6 7 dB 20 k SD to GND 300 k RL = 4, THD = 10% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.6V VDD = 2.5V 2.6 1.3 555 W W mW RL = 8, THD = 10% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.6V VDD = 2.5V 1.6 800 354 W mW mW RL = 4, THD = 1% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.6V VDD = 2.5V 2.1 1 446 W W mW 1.3 640 286 W (min) mW mW PO = 200mW, RL = 8, f = 1kHz 0.03 % PO = 100mW, RL = 8, f = 1kHz 0.03 % 78 76 dB dB RL = 8, THD = 1% f = 1kHz, 22kHz BW VDD = 5V VDD = 3.6V VDD = 2.5V THD+N Max Typ 1.1 PSRR Power Supply Rejection Ratio (Input Referred) VRIPPLE = 200mVP-P Sine, Inputs AC GND, CIN = 1F fRIPPLE = 217Hz fRIPPLE = 1kHz CMRR Common Mode Rejection Ratio (Input Referred) VRIPPLE = 1VP-P fRIPPLE = 217Hz 86 dB Efficiency VDD = 5V, POUT = 1W VDD = 3.6V, POUT = 400mW 88 85 % % SNR Signal to Noise Ratio PO = 1W 97 dB (1) (2) (3) (4) 4 The Electrical Characteristics tables list ensured specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not ensured. RL is a resistive load in series with two inductors to simulate an actual speaker load. For RL = 8, the load is 15H + 8, +15H. For RL = 4, the load is 15H + 4 + 15H. Datasheet min/max specification limits are ensured by test or statistical analysis. Typical values represent most likely parametric norms at TA = +25C, and at the Recommended Operation Conditions at the time of product characterization and are not ensured. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 Electrical Characteristics VDD = PVDD = 5V(1) (2) (continued) The following specifications apply for AV = 6dB, RL = 8, f = 1kHz, unless otherwise specified. Limits apply for TA = 25C. LM48311 Symbol Parameter Conditions Min (3) OS Output Noise (Input Referred) Un-weighted A-weighted Max (3) Units (Limits) V V AUDIO ANALYZER VDD + - (4) 28 22 200 mVp-p VDD Typ LPF IN+ DUT ZL IN- Figure 3. PSRR Test Circuit VDD AUDIO ANALYZER - + VDD LPF IN+ DUT IN- ZL 200 mVp-p Figure 4. CMRR Test Circuit Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 5 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com Typical Performance Characteristics For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted. THD+N vs Frequency VDD = 3.6V, PO = 600mW, RL = 4 100 100 10 10 THD+N (%) THD+N (%) THD+N vs Frequency VDD = 2.5V, PO = 250mW, RL = 4 1 0.1 0.01 100 1000 10000 0.001 10 100000 100000 Figure 6. THD+N vs Frequency VDD = 5 .0V, PO = 1.2W, RL = 4 THD+N vs Frequency VDD = 2.5V, PO = 175mW, RL = 8 10 10 1 0.1 1 0.1 0.01 100 1000 10000 0.001 10 100000 100 1000 10000 100000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 7. Figure 8. THD+N vs Frequency VDD = 3.6V, PO = 400mW, RL = 8 THD+N vs Frequency VDD = 3.6V, PO = 600mW, RL = 8 100 100 10 10 THD+N (%) THD+N (%) 10000 FREQUENCY (Hz) 100 1 0.1 0.01 0.001 10 1000 Figure 5. 100 0.001 10 100 FREQUENCY (Hz) 0.01 6 0.1 0.01 THD+N (%) THD+N (%) 0.001 10 1 1 0.1 0.01 100 1000 10000 100000 0.001 10 100 1000 10000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Figure 10. Submit Documentation Feedback 100000 Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 Typical Performance Characteristics (continued) For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted. THD+N vs Frequency VDD = 3.6V, PO = 1.25W, RL = 3 100 100 THD+N vs Output Power f = 1kHz, RL = 4 VDD = 5V 10 10 THD+N (%) THD+N (%) VDD = 3.6V 1 0.1 1 VDD = 2.5V 0.1 0.01 0.001 10 100 1000 10000 0.01 0.001 100000 0.01 Figure 11. Figure 12. THD+N vs Output Power f = 1kHz, RL = 8 THD+N vs Output Power f = 1kHz, RL = 3 100 VDD = 5V 10 THD+N (%) VDD = 3.6V THD+N (%) 10 VDD = 5V 10 1 VDD = 2.5V 0.1 VDD = 3.6V 1 VDD = 2.5V 0.1 0.01 0.001 0.01 0.1 1 0.01 0.001 10 0.01 OUTPUT POWER (W) 0.1 1 Figure 14. Efficiency vs Output Power f = 1kHz, RL = 4 Efficiency vs Output Power f = 1kHz, RL = 8 100 100 90 90 80 70 EFFICIENCY (%) VDD = 5V 60 VDD = 3.6V 50 40 10 OUTPUT POWER (W) Figure 13. 80 EFFICIENCY (%) 1 OUTPUT POWER (W) FREQUENCY (Hz) 100 0.1 VDD = 2.5V 30 20 VDD = 5V 70 VDD = 3.6V 60 VDD = 2.5V 50 40 30 20 10 10 0 0 500 1000 1500 2000 2500 OUTPUT POWER (mW) 0 0 250 500 750 1000 1250 1500 OUTPUT POWER (mW) Figure 15. Figure 16. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 7 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com Typical Performance Characteristics (continued) For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted. Power Dissipation vs Output Power f = 1kHz, RL = 4 Power Dissipation vs Output Power f = 1kHz, RL = 8 150 VDD = 5V VDD = 5V 125 POWER DISSIPATION (mW) POWER DISSIPATION (mW) 400 300 VDD = 3.6V 200 VDD = 2.5V 100 100 VDD = 2.5V 75 VDD = 3.6V 50 25 0 0 0 500 1000 1500 2000 2500 0 250 500 750 1000 1250 1500 OUTPUT POWER (mW) OUTPUT POWER (mW) Figure 17. Figure 18. Output Power vs Supply Voltage f = 1kHz, RL = 4 Output Power vs Supply Voltage f = 1kHz, RL = 8 3.5 2 OUTPUT POWER (W) OUTPUT POWER (W) 3 2.5 THD + N = 10% 2 1.5 THD + N = 1% 1 1.5 THD + N = 10% 1 THD + N = 1% 0.5 0.5 0 2.5 3 3.5 4 4.5 5 0 2.5 5.5 3 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) Figure 19. Figure 20. CMRR vs Frequency VDD= 5.0V, VRIPPLE = 1VP-P, RL = 8 PSRR vs Frequency VDD= 5.0V, VRIPPLE = 200mVP-P, RL = 8 0 0 -10 -20 -20 PSRR (dB) CMRR (dB) -30 -40 -60 -40 -50 -60 -70 -80 -80 -100 10 100 1000 10000 100000 -90 10 FREQUENCY (Hz) 1000 10000 100000 FREQUENCY (Hz) Figure 21. 8 100 Figure 22. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 Typical Performance Characteristics (continued) For all performance graphs, the Output Gains are set to 0dB, unless otherwise noted. Spread Spectrum Output Spectrum vs Frequency VDD= 5.0V, VIN = 1VRMS, RL = 8 Wideband Spread Spectrum Output Spectrum vs Frequency VDD= 5.0V, RL = 8 0 0 -10 -20 -30 AMPLITUDE (dBV) AMPLITUDE (dBV) -20 -40 -60 -80 -40 -50 -60 -70 -80 -100 -90 -120 10 100 1000 10000 -100 100 100000 1000 FREQUENCY (Hz) Figure 23. Figure 24. Supply Current vs Supply Voltage No Load Shutdown Supply Current vs Supply Voltage No Load 4 0.05 SUPPLY CURRENT(PA) SUPPLY CURRENT (mA) 10000 FREQUENCY (Hz) 3 2 1 0.04 0.03 0.02 0.01 0 2.5 3 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE (V) 0 2.5 3 3.5 4 4.5 5 5.5 SUPPLY VOLTAGE (V) Figure 25. Figure 26. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 9 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com APPLICATION INFORMATION GENERAL AMPLIFIER FUNCTION The LM48311 mono Class D audio power amplifier features a filterless modulation scheme that reduces external component count, conserving board space and reducing system cost. The outputs of the device transition from VDD to GND with a 300kHz switching frequency. With no signal applied, the outputs (VOUTA and VOUTB) switch with a 50% duty cycle, in phase, causing the two outputs to cancel. This cancellation results in no net voltage across the speaker, thus there is no current to the load in the idle state. With the input signal applied, the duty cycle (pulse width) of the LM48311 outputs changes. For increasing output voltage, the duty cycle of VOUTA increases, while the duty cycle of VOUTB decreases. For decreasing output voltages, the converse occurs. The difference between the two pulse widths yields the differential output voltage. ENHANCED EMISSIONS SUPPRESSION SYSTEM (E2S) The LM48311 features Texas Instruments' patent-pending E2S system that reduces EMI, while maintaining high quality audio reproduction and efficiency. The E2S system features spread spectrum and advanced edge rate control (ERC). The LM48311 ERC greatly reduces the high frequency components of the output square waves by controlling the output rise and fall times, slowing the transitions to reduce RF emissions, while maximizing THD+N and efficiency performance. The overall result of the E2S system is a filterless Class D amplifier that passes FCC Class B radiated emissions standards with 20in of twisted pair cable, with excellent 0.03% THD+N and high 88% efficiency. SPREAD SPECTRUM The spread spectrum modulation reduces the need for output filters, ferrite beads or chokes. The switching frequency varies randomly by 30% about a 300kHz center frequency, reducing the wideband spectral contend, improving EMI emissions radiated by the speaker and associated cables and traces. Where a fixed frequency class D exhibits large amounts of spectral energy at multiples of the switching frequency, the spread spectrum architecture of the LM48311 spreads that energy over a larger bandwidth (See Typical Performance Characteristics). The cycle-to-cycle variation of the switching period does not affect the audio reproduction, efficiency, or PSRR. DIFFERENTIAL AMPLIFIER EXPLANATION As logic supplies continue to shrink, system designers are increasingly turning to differential analog signal handling to preserve signal to noise ratios with restricted voltage signs. The LM48311 features a fully differential speaker amplifier. A differential amplifier amplifies the difference between the two input signals. Traditional audio power amplifiers have typically offered only single-ended inputs resulting in a 6dB reduction of SNR relative to differential inputs. The LM48311 also offers the possibility of DC input coupling which eliminates the input coupling capacitors. A major benefit of the fully differential amplifier is the improved common mode rejection ratio (CMRR) over single ended input amplifiers. The increased CMRR of the differential amplifier reduces sensitivity to ground offset related noise injection, especially POWER DISSIPATION AND EFFICIENCY The major benefit of a Class D amplifier is increased efficiency versus a Class AB. The efficiency of the LM48311 is attributed to the region of operation of the transistors in the output stage. The Class D output stage acts as current steering switches, consuming negligible amounts of power compared to their Class AB counterparts. Most of the power loss associated with the output stage is due to the IR loss of the MOSFET onresistance, along with switching losses due to gate charge. SHUTDOWN FUNCTION The LM48311 features a low current shutdown mode. Set SD = GND to disable the amplifier and reduce supply current to 0.01A. Switch SD between GND and VDD for minimum current consumption is shutdown. The LM48311 may be disabled with shutdown voltages in between GND and VDD, the idle current will be greater than the typical 0.1A value. Increased THD+N may also be observed when a voltage of less than VDD is applied to SD. 10 Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 The LM48311 shutdown input has and internal pulldown resistor. The purpose of this resistor is to eliminate any unwanted state changes when SD is floating. To minimize shutdown current, SD should be driven to GND or left floating. If SD is not driven to GND or floating, an increase in shutdown supply current will be noticed. AUDIO AMPLIFIER POWER SUPPLY BYPASSING/FILTERING Proper power supply bypassing is critical for low noise performance and high PSRR. Place the supply bypass capacitors as close to the device as possible. Typical applications employ a voltage regulator with 10F and 0.1F bypass capacitors that increase supply stability. These capacitors do not eliminate the need for bypassing of the LM48311 supply pins. A 1F capacitor is recommended. AUDIO AMPLIFIER INPUT CAPACITOR SELECTION Input capacitors may be required for some applications, or when the audio source is single-ended. Input capacitors block the DC component of the audio signal, eliminating any conflict between the DC component of the audio source and the bias voltage of the LM48311. The input capacitors create a high-pass filter with the input resistors RIN. The -3dB point of the high pass filter is found using Equation (1) below. f = 1 / 2RINCIN (1) Where RIN is the value of the input resistor given in the Electrical Characteristics table. The input capacitors can also be used to remove low frequency content from the audio signal. Small speakers cannot reproduce, and may even be damaged by low frequencies. High pass filtering the audio signal helps protect the speakers. When the LM48311 is using a single-ended source, power supply noise on the ground is seen as an input signal. Setting the high-pass filter point above the power supply noise frequencies, 217Hz in a GSM phone, for example, filters out the noise such that it is not amplified and heard on the output. Capacitors with a tolerance of 10% or better are recommended for impedance matching and improved CMRR and PSRR. AUDIO AMPLIFIER GAIN The gain of the LM48311 is internally set to 6dB. The gain can be reduced by adding additional input resistance (LM48311 Demo Board Schematic). In this configuration, the gain of the device is given by: AV = 2 x [RF / (RINEXT + RIN)] (2) Where RF is 40k, RIN is 20k, and RINEXT is the value of the additional external resistor. RF CIN RIN RINEXT IN+ INCIN RINEXT RIN RF Figure 27. Reduced Gain Configuration SINGLE-ENDED AUDIO AMPLIFIER CONFIGURATION The LM48311 is compatible with single-ended sources. When configured for single-ended inputs, input capacitors must be used to block and DC component at the input of the device. Figure 28 shows the typical single-ended applications circuit. Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 11 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com VDD 1 PF VDD PVDD LM48311 SINGLE-ENDED AUDIO INPUT INOUTA OUTB IN+ Figure 28. Single-Ended Input Configuration PCB LAYOUT GUIDELINES As output power increases, interconnect resistance (PCB traces and wires) between the amplifier, load and power supply create a voltage drop. The voltage loss due to the traces between the LM48311 and the load results in lower output power and decreased efficiency. Higher trace resistance between the supply and the LM48311 has the same effect as a poorly regulated supply, increasing ripple on the supply line, and reducing peak output power. The effects of residual trace resistance increases as output current increases due to higher output power, decreased load impedance or both. To maintain the highest output voltage swing and corresponding peak output power, the PCB traces that connect the output pins to the load and the supply pins to the power supply should be as wide as possible to minimize trace resistance. The use of power and ground planes will give the best THD+N performance. In addition to reducing trace resistance, the use of power planes creates parasitic capacitors that help to filter the power supply line. The inductive nature of the transducer load can also result in overshoot on one of both edges, clamped by the parasitic diodes to GND and VDD in each case. From an EMI standpoint, this is an aggressive waveform that can radiate or conduct to other components in the system and cause interference. In is essential to keep the power and output traces short and well shielded if possible. Use of ground planes beads and micros-strip layout techniques are all useful in preventing unwanted interference. wires or traces acting as antennas become more efficient with length. Ferrite chip inductors places close to the LM48311 outputs may be needed to reduce EMI radiation. BUILD OF MATERIALS Table 1. LM48311TL Demoboard Bill of Materials 12 Designator Quantity C1 1 10F 10% 16V Tantalum Capacitor (B Case) AVX TPSB106K016R0800 Description C2 1 1F 10% 16V X5R Ceramic Capacitor (603) Panasonic ECJ-1VB1C105K C3, C4 2 1F 10% 16V X7R Ceramic Capacitor (1206) Panasonic ECJ-3YB1C105K JU1 1 3-Pin Header LM48311TL 1 LM48311TL (9-Bump DSBGA) Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 LM48311 Demo Board Schematic Figure 29. LM48311 Demo Board Schematic Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 13 LM48311 SNAS484B - JUNE 2009 - REVISED MAY 2013 www.ti.com Demo Boards 14 Figure 30. Top Silkscreen Figure 31. Top Layer Figure 32. Bottom Silkscreen Figure 33. Bottom Layer Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 LM48311 www.ti.com SNAS484B - JUNE 2009 - REVISED MAY 2013 REVISION HISTORY Rev Date 1.0 06/25/09 Initial released. Description 1.01 03/17/10 Text edits (under ENHANCED EMISSIONS....) Changes from Revision A (May 2013) to Revision B * Page Changed layout of National Data Sheet to TI format .......................................................................................................... 14 Submit Documentation Feedback Copyright (c) 2009-2013, Texas Instruments Incorporated Product Folder Links: LM48311 15 PACKAGE OPTION ADDENDUM www.ti.com 2-May-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (C) Top-Side Markings (3) (4) LM48311TL/NOPB ACTIVE DSBGA YZR 9 250 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 G N1 LM48311TLX/NOPB ACTIVE DSBGA YZR 9 3000 Green (RoHS & no Sb/Br) SNAGCU Level-1-260C-UNLIM -40 to 85 G N1 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 1 Samples PACKAGE MATERIALS INFORMATION www.ti.com 8-May-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) LM48311TL/NOPB DSBGA YZR 9 250 178.0 8.4 LM48311TLX/NOPB DSBGA YZR 9 3000 178.0 8.4 Pack Materials-Page 1 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.7 1.7 0.76 4.0 8.0 Q1 1.7 1.7 0.76 4.0 8.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 8-May-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) LM48311TL/NOPB DSBGA YZR LM48311TLX/NOPB DSBGA YZR 9 250 210.0 185.0 35.0 9 3000 210.0 185.0 35.0 Pack Materials-Page 2 MECHANICAL DATA YZR0009xxx D 0.6000.075 E TLA09XXX (Rev C) D: Max = 1.581 mm, Min =1.521 mm E: Max = 1.557 mm, Min =1.497 mm 4215046/A NOTES: A. All linear dimensions are in millimeters. Dimensioning and tolerancing per ASME Y14.5M-1994. B. This drawing is subject to change without notice. www.ti.com 12/12 IMPORTANT NOTICE Texas Instruments Incorporated (TI) reserves the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. TI's published terms of sale for semiconductor products (http://www.ti.com/sc/docs/stdterms.htm) apply to the sale of packaged integrated circuit products that TI has qualified and released to market. Additional terms may apply to the use or sale of other types of TI products and services. Reproduction of significant portions of TI information in TI data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such reproduced documentation. Information of third parties may be subject to additional restrictions. Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyers and others who are developing systems that incorporate TI products (collectively, "Designers") understand and agree that Designers remain responsible for using their independent analysis, evaluation and judgment in designing their applications and that Designers have full and exclusive responsibility to assure the safety of Designers' applications and compliance of their applications (and of all TI products used in or for Designers' applications) with all applicable regulations, laws and other applicable requirements. Designer represents that, with respect to their applications, Designer has all the necessary expertise to create and implement safeguards that (1) anticipate dangerous consequences of failures, (2) monitor failures and their consequences, and (3) lessen the likelihood of failures that might cause harm and take appropriate actions. Designer agrees that prior to using or distributing any applications that include TI products, Designer will thoroughly test such applications and the functionality of such TI products as used in such applications. TI's provision of technical, application or other design advice, quality characterization, reliability data or other services or information, including, but not limited to, reference designs and materials relating to evaluation modules, (collectively, "TI Resources") are intended to assist designers who are developing applications that incorporate TI products; by downloading, accessing or using TI Resources in any way, Designer (individually or, if Designer is acting on behalf of a company, Designer's company) agrees to use any particular TI Resource solely for this purpose and subject to the terms of this Notice. TI's provision of TI Resources does not expand or otherwise alter TI's applicable published warranties or warranty disclaimers for TI products, and no additional obligations or liabilities arise from TI providing such TI Resources. TI reserves the right to make corrections, enhancements, improvements and other changes to its TI Resources. TI has not conducted any testing other than that specifically described in the published documentation for a particular TI Resource. Designer is authorized to use, copy and modify any individual TI Resource only in connection with the development of applications that include the TI product(s) identified in such TI Resource. NO OTHER LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE TO ANY OTHER TI INTELLECTUAL PROPERTY RIGHT, AND NO LICENSE TO ANY TECHNOLOGY OR INTELLECTUAL PROPERTY RIGHT OF TI OR ANY THIRD PARTY IS GRANTED HEREIN, including but not limited to any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information regarding or referencing third-party products or services does not constitute a license to use such products or services, or a warranty or endorsement thereof. Use of TI Resources may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. TI RESOURCES ARE PROVIDED "AS IS" AND WITH ALL FAULTS. TI DISCLAIMS ALL OTHER WARRANTIES OR REPRESENTATIONS, EXPRESS OR IMPLIED, REGARDING RESOURCES OR USE THEREOF, INCLUDING BUT NOT LIMITED TO ACCURACY OR COMPLETENESS, TITLE, ANY EPIDEMIC FAILURE WARRANTY AND ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, AND NON-INFRINGEMENT OF ANY THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. TI SHALL NOT BE LIABLE FOR AND SHALL NOT DEFEND OR INDEMNIFY DESIGNER AGAINST ANY CLAIM, INCLUDING BUT NOT LIMITED TO ANY INFRINGEMENT CLAIM THAT RELATES TO OR IS BASED ON ANY COMBINATION OF PRODUCTS EVEN IF DESCRIBED IN TI RESOURCES OR OTHERWISE. IN NO EVENT SHALL TI BE LIABLE FOR ANY ACTUAL, DIRECT, SPECIAL, COLLATERAL, INDIRECT, PUNITIVE, INCIDENTAL, CONSEQUENTIAL OR EXEMPLARY DAMAGES IN CONNECTION WITH OR ARISING OUT OF TI RESOURCES OR USE THEREOF, AND REGARDLESS OF WHETHER TI HAS BEEN ADVISED OF THE POSSIBILITY OF SUCH DAMAGES. Unless TI has explicitly designated an individual product as meeting the requirements of a particular industry standard (e.g., ISO/TS 16949 and ISO 26262), TI is not responsible for any failure to meet such industry standard requirements. Where TI specifically promotes products as facilitating functional safety or as compliant with industry functional safety standards, such products are intended to help enable customers to design and create their own applications that meet applicable functional safety standards and requirements. Using products in an application does not by itself establish any safety features in the application. Designers must ensure compliance with safety-related requirements and standards applicable to their applications. Designer may not use any TI products in life-critical medical equipment unless authorized officers of the parties have executed a special contract specifically governing such use. Life-critical medical equipment is medical equipment where failure of such equipment would cause serious bodily injury or death (e.g., life support, pacemakers, defibrillators, heart pumps, neurostimulators, and implantables). Such equipment includes, without limitation, all medical devices identified by the U.S. Food and Drug Administration as Class III devices and equivalent classifications outside the U.S. TI may expressly designate certain products as completing a particular qualification (e.g., Q100, Military Grade, or Enhanced Product). Designers agree that it has the necessary expertise to select the product with the appropriate qualification designation for their applications and that proper product selection is at Designers' own risk. Designers are solely responsible for compliance with all legal and regulatory requirements in connection with such selection. Designer will fully indemnify TI and its representatives against any damages, costs, losses, and/or liabilities arising out of Designer's noncompliance with the terms and provisions of this Notice. Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright (c) 2017, Texas Instruments Incorporated Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Texas Instruments: LM48311TL/NOPB LM48311TLX/NOPB