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MRF9120LR3
1
Freescale Semiconductor
RF Product Device Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
•Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: -45 dBc in 30 kHz BW
1.98 MHz: -60 dBc in 30 kHz BW
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD250
1.43
W
W/°C
Storage Temperature Range Tstg -65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 0.45 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M1 (Minimum)
Document Number: MRF9120
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
CASE 375B-04, STYLE 1
NI-860
MRF9120LR3
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
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2
Freescale Semiconductor
RF Product Device Data
MRF9120LR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th) 2 3 4 Vdc
Gate Quiescent Voltage (2)
(VDS = 26 Vdc, ID = 1000 mAdc)
VGS(Q) — 3.8 — Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on) — 0.17 0.4 Vdc
Dynamic Characteristics (1,3)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss — 50 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2 — pF
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
(continued)
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MRF9120LR3
3
Freescale Semiconductor
RF Product Device Data
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system)
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps 15 16.5 — dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η36 39 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL — -16 -9 dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps — 16.5 — dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η— 40.5 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD — -30 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL — -13 — dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
P1dB — 120 — W
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
Gps — 16 — dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
η— 51 — %
1. Measurement made with device in push-pull configuration.
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Freescale Semiconductor
RF Product Device Data
MRF9120LR3
Z21
Z19
Z16 Z18
DUT
+
+
RF
INPUT
RF
OUTPUT
C29
B3
Z1
Balun 1
Z2 Z4 Z6 Z8 Z12
Z3 Z5 Z7 Z9 Z13
Z17
Z20
Z25
Z24
Z26 Z27
B4
Z15
Z14
B1 B2
B6
B5
C30
C10
C9
C7
C6C5C4
C2
C11
C20
C18
L2
Balun 2
C25 C26 C27
L1
C17
C19
C23 C24 C28
C16C15C14C13
C22
C21
C3
C1
R2
R1
C12
VGG
VDD
VDD
VGG
+ +
+
+ +
+
Figure 1. 880 MHz Broadband Test Circuit Schematic
C8
Z23
Z22
Z10
Z11
Z14, Z15 0.040″ x 0.630″ Microstrip
Z16, Z17 0.040″ x 0.630″ Microstrip
Z18, Z19 0.330″ x 0.630″ Microstrip
Z20, Z21 0.450″ x 0.630″ Microstrip
Z22, Z23 0.750″ x 0.220″ Microstrip
Z24, Z25 0.115″ x 0.420″ Microstrip
Z26 0.130″ x 0.080″ Microstrip
Z27 0.350″ x 0.080″ Microstrip
Z1 0.420″ x 0.080″ Microstrip
Z2, Z3 0.090″ x 0.420″ Microstrip
Z4, Z5 0.125″ x 0.220″ Microstrip
Z6, Z7 0.095″ x 0.220″ Microstrip
Z8, Z9 0.600″ x 0.220″ Microstrip
Z10, Z11 0.200″ x 0.630″ Microstrip
Z12, Z13 0.500″ x 0.630″ Microstrip
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MRF9120LR3
5
Freescale Semiconductor
RF Product Device Data
Table 5. 880 MHz Broadband Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
B1, B3, B5, B6 Long Ferrite Beads, Surface Mount 95F787 Newark
B2, B4 Short Ferrite Beads, Surface Mount 95F786 Newark
C1, C2 68 pF Chip Capacitors 100B680JP500X ATC
C3, C6 0.8 - 8.0 pF Variable Capacitors 44F3360 Newark
C4 7.5 pF Chip Capacitor 100B7R5JP150X ATC
C5 3.3 pF Chip Capacitor 100B3R3CP150X ATC
C7, C8 11 pF Chip Capacitors 100B110BCA500X ATC
C9, C10, C21, C22 51 pF Chip Capacitors 100B510JP500X ATC
C11, C12 6.2 pF Chip Capacitors 100B6R2BCA150X ATC
C13 4.7 pF Chip Capacitor 100B4R7BCA150X ATC
C14 5.1 pF Chip Capacitor 100B5R1BCA150X ATC
C15 3.0 pF Chip Capacitor 100B2R7BCA150X ATC
C16 2.7 pF Chip Capacitor 100B3R0BCA150X ATC
C17 0.6 - 4.5 pF Variable Capacitor 44F3358 Newark
C18, C19 47 pF Chip Capacitors 100B470JP500X ATC
C20 0.4 - 2.5 pF Variable Capacitor 44F3367 Newark
C29, C30 10 µF, 35 V Tantalum Chip Capacitors 93F2975 Newark
C23, C24, C25, C26 22 µF, 35 V Tantalum Chip Capacitors 92F1853 Newark
C27, C28 220 µF, 50 V Electrolytic Capacitors 14F185 Newark
Balun 1, Balun 2 Xinger Surface Mount Balun Transformers 3A412 Anaren
L1, L2 12.5 nH Mini Spring Inductors A04T-5 Coilcraft
R1, R2 510 Ω, 1/4 W Chip Resistors
WB1, WB2, WB3, WB4 10 mil Brass Wear Blocks
Board Material 30 mil Glass Teflon, εr = 2.55 Copper Clad, 2 oz Cu 900 MHz Push-Pull Rev 01B CMR
PCB Etched Circuit Board 900 MHz Push-Pull Rev 01B CMR
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6
Freescale Semiconductor
RF Product Device Data
MRF9120LR3
WB1
WB2
WB4 WB3
Balun1 Balun2
CUTOUT AREA
C30 B3
R1
MRF9120
900 MHz
PUSH PULL
Rev 01B
B4
C10
C8
C2
C1
C5
C6
R2 C7
C9
B1 B2
C29
C27
C26C25
C21
C11
B6
L1
C13-C15
L2
C12
C22
B5
C24C23
C28
C20
C16
C17
C19
C3
C4
C18
Figure 2. 865-895 MHz Broadband Test Circuit Component Layout
VDD
VGG
VGG VDD
INPUT OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
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MRF9120LR3
7
Freescale Semiconductor
RF Product Device Data
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
Pout, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Gps, POWER GAIN (dB)
Figure 3. Class AB Broadband Circuit Performance
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus
Output Power
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
Figure 7. Power Gain and Efficiency versus
Output Power
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%)h
-10
-18
-14
, DRAINh
EFFICIENCY (%)
IMD, INTERMODULATION
DISTORTION (dBc)
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
-12
-16
900
10
18
860
-38
50
IRL
Gps
IMD
VDD = 26 Vdc
Pout = 120 W (PEP)
IDQ = 1000 mA
Tone Spacing = 100 kHz
17 45
16 40
15 35
14 -30
13 -32
12 -34
11 -36
895890885880875870865
100
15
18
1500 mA
VDD = 26 Vdc
f1 = 880.0 MHz
f2 = 880.1 MHz
17.5
17
16.5
16
15.5
101
1200 mA
800 mA
1000 mA
100
-60
-10
1
800 mA
VDD = 26 Vdc
f1 = 880.0 MHz
f2 = 880.1 MHz
1000 mA
1200 mA
1500 mA
10
-20
-30
-40
-50
100
-70
-10
1
3rd Order
VDD = 26 Vdc
IDQ = 1000 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
10
-20
-30
-40
-50
-60
5th Order
7th Order
100
6
18
1
0
60
Gps
ηVDD = 26 Vdc
IDQ = 1000 mA
f = 880 MHz
16 50
14 40
12 30
10 20
810
10
η
1000
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8
Freescale Semiconductor
RF Product Device Data
MRF9120LR3
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD versus
Output Power
Figure 9. Power Gain, Efficiency and ACPR
versus Output Power
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%)h
Gps, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)h
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
100
6
18
0.1
-80
40
Gps
η
750 kHz
VDD = 26 Vdc
IDQ = 1000 mA
f = 880 MHz
IS-95, Pilot, Sync, Paging
Traffic Codes 8 through 13
14 0
16 20
12 -20
10 -40
8 -60
101
1.98 MHz
100
6
18
1
-60
60
14
40
12
20
10
0
-20
8-40
10
Gps
η
IMD
VDD = 26 Vdc
IDQ = 1000 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
16
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MRF9120LR3
9
Freescale Semiconductor
RF Product Device Data
Figure 10. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
865
880
895
4.89 - j0.2
3.29 - j1.3
4.54 + j0.07
4.9 - j0.5
4.6 - j0.32
4.2 - j0.04
VDD = 26 V, IDQ = 1000 mA, Pout = 120 W PEP
Zo = 5 Ω
Zsource
Zload
f = 895 MHz
f = 865 MHz
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured
from drain to drain, balanced configuration.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
-
-+
+
f = 865 MHz
f = 895 MHz
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10
Freescale Semiconductor
RF Product Device Data
MRF9120LR3
PACKAGE DIMENSIONS
CASE 375B-04
ISSUE F
NI-860
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.380 0.390 9.65 9.91
C0.180 0.224 4.57 5.69
D0.325 0.335 8.26 8.51
E0.060 0.070 1.52 1.78
F0.004 0.006 0.10 0.15
G1.100 BSC 27.94 BSC
H0.097 0.107 2.46 2.72
K0.085 0.115 2.16 2.92
L0.425 BSC 10.80 BSC
N0.851 0.869 21.62 22.07
Q0.118 0.138 3.00 3.51
R0.395 0.405 10.03 10.29
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.140 (28.96) BASED ON M3 SCREW.
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. GATE
5. SOURCE
G
L
K
12
34
EC
SEATING
PLANE
5
4X
S0.394 0.406 10.01 10.31
M0.852 0.868 21.64 22.05
bbb 0.010 REF 0.25 REF
ccc 0.015 REF 0.38 REF
HF
M
A
M
ccc B M
T
R
(LID)
S
(INSULATOR)
M
A
M
bbb B M
T
Q2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
D
4X
B
A
B (FLANGE)
A
M
A
M
ccc B M
T
M
A
M
bbb B M
T
M
(INSULATOR) T
N
(LID)
PIN 5
4
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MRF9120LR3
11
Freescale Semiconductor
RF Product Device Data
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
10 Dec. 2009 •Data sheet archived. Part no longer manufactured.
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Freescale Semiconductor
RF Product Device Data
MRF9120LR3
Information in this document is provided solely to enable system and software
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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
Freescale Semiconductor, Inc. 2006, 2009. All rights reserved.
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Document Number: MRF9120
Rev. 10, 5/2006
