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XBS306S17R-G
Schottky Barrier Diode, 3A, 60V Type
■PACKAGING INFORMATION
Ta=25℃
Ta=25℃
LIMITS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
VF1 IF=200μA - 0.145 - V
Forward Voltage VF2 I
F=3A - 0.59 0.66 V
IR1 V
R=30V - 3 -
μA
Reverse Current IR2 V
R=60V - 9 300
μA
Inter-Terminal Capacity Ct VR=1V , f=1MHz - 195 - pF
Reverse Recovery Time*2 trr IF=IR=10mA , irr=1mA - 55 - ns
*2：trr measurement circuit
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM 60 V
Reverse Voltage (DC) VR 60 V
Forward Current (Average) IF(AVE) 3 A
Non Continuous
Forward Surge Current*1 IFSM 50 A
Junction Temperature Tj 125 ℃
S torage Temperature Range Tstg -55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
PRODUCT NAME DEVICE ORIENTATION
XBS306S17 R-G SMA (Halogen & Antimony free)
XBS306S17 R SMA
■FEATURES
Forward Voltage : VF=0.59V (TYP.)
Forward Current : IF(AVE)=3A
Repetitive Peak Reverse Voltage : VRM=60V
■
A
BSOLUTE MAXIMUM RATINGS
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■MARKING RULE
■PRODUCT NAME
①②③④⑤⑥: 306S17(Product Number)
⑦⑧ : Assembly Lot Number
ETR1616-002a
Pulse Generatrix
Bias Device Under test
Oscillosco
p
e
Cathode Bar
SMA Unit: mm
■ELECTRICAL CHARACTERISTICS
* The “-G” suffix indicates that the products are Halogen and Anti mony free as well as being fully RoHS compliant.
* The device orientation is fixed in i ts embossed tape pocket.
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XBS306S17R-G
(1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage
0.01
0.1
1
10
0 0.2 0.4 0.6 0.8
Forward Voltage VF (V)
Forward Current IF (A)
75℃
-25℃
25℃
Ta=125℃
0.1
1
10
100
1000
10000
0204060
Reverse Voltage V
R
(V)
Reverse Current I
R
(uA)
25℃
Ta=125℃
75℃
100℃
(3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature
0.0
0.2
0.4
0.6
0.8
-50 0 50 100 150
Operating Temperature Ta (℃)
Forward Voltage V
F
(V)
I
F
=3A
1.5A
0.5A
0.1A
1
10
100
1000
10000
0 50 100 150
Operating Temperature Ta (℃)
Reverse Current I
R
(uA)
5V
10V
V
R
=40V
20V
(5) Inter-Terminal Capacity vs. Reve rse Voltage (6) Average Forward Current vs. Operating Temperature
0
100
200
300
400
500
0 10203040
Reverse Voltage V
R
(V)
Inter-Terminal Capacity Ct (pF)
Ta=25℃
0.0
1.0
2.0
3.0
4.0
5.0
0 50 100 150
Operating Temperature Ta (℃)
Average Forward Current IF
AV
(A)
■TYPICAL PERFORMANCE CHARACTERISTICS
Forward Current: IF (A)
Reverse Current: IR (μA)
Forward Voltage: VF (V) Reverse Voltage: VR (V)
Reverse Current: IR (μA)
Forward Voltage: VF (V)
Operating Temperature: Ta (℃) Operating Temperature: Ta (℃)
Inter-Terminal Capacity: Ct (pF)
Average Forward Current: IFAV (A)
Operating Temperature: Ta (℃) Reverse Voltage: VR (V)
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XBS306S17R-G
1. The products and prod uct specifications cont ained herein are subject to change without
notice to improve performance characteristics. Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights ari sin g from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this dat asheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user .
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our re presentatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCT OR LTD．
