ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
30/7/97 DB91023-AAS/A3
LOW INPUT CURRENT
PHOTODARLINGTON OPTICALL Y
COUPLED ISOLA T OR S
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
lVDE 0884 in 2 available lead form : -
- STD
- G form
VDE 0884 in SMD approval pending
lEN60950 approved by SETI,
reg. no. 157786-18
4N32X3,-2,-1
4N32-3,-2,-1
DESCRIPTION
The 4N32-3,-2,-1 series of optically coupled
isolators consist of an infrared light emitting
diode and NPN silicon photodarlington in a
space efficient dual in line plastic package.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lLow input current 0.25mA IF
lHigh CurrentTransfer Ratio (200% min)
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lHigh BVCEO (55V min)
lAll electrical parameters 100% tested
lCustom electrical selections available
APPLICATIONS
lComputer terminals
lIndustrial systems controllers
lMeasuring instruments
lSignal transmission between systems of
different potentials and impedances
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 80mA
Reverse Voltage 10V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 55V
Emitter-collector Voltage BVECO 6V
Power Dissipation 150mW
POWER DISSIPATION
Total Power Dissipation 250mW
(derate linearly 3.3mW/°C above 25°C)
1
3
24
6
5
Dimensions in mm
3.3
2.54
6.4
6.2
1.54
8.8
8.4 4.3
4.1
0.5
0.5 0.3
7.8
7.4
9.6
8.4
10.16
0.26
OPTION G
5.08
max.
SURFACE MOUNT
OPTION SM
1.2
0.6 1.4
0.9
10.2
9.5
PARAMETER MI N TY P MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA
Reverse Voltage (VR)10VI
R
= 10µA
Reverse Current (IR)10µAV
R
= 10V
Output Collector-emitter Breakdown (BVCEO)55 V I
C
= 1mA (note 2)
Collector-base Breakdown (BVCBO)55 V I
C
= 100µA
Emitter-collector Breakdown (BVECO) 6 V I
E
= 100µA
Collector-emitter Dark Current (ICEO) 100 nA VCE = 10V
Coupled Current Transfer Ratio (CTR) (Note 2)
4N32-3 20 0 % 0.25mA IF , 1.0V VCE
40 0 % 0.5mA IF , 1.0V VCE
80 0 % 1.0mA IF , 1.0V VCE.
4N32-2 40 0 % 0.5mA IF , 1.0V VCE
80 0 % 1.0mA IF , 1.0V VCE.
4N32-1 80 0 % 1.0mA IF , 1.0V VCE.
Collector-emitter Saturation Voltage -3 1.0 V 0.25mA IF , 0.5mA IC
-2 1. 0 V 0.5mA IF , 2mA IC
-1 1. 0 V 1.0mA IF , 8mA IC
Input to Output Isolation Voltage VISO 5300 VRMS (note 1)
7500 VPK (note 1)
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Output Rise Time t r 60 30 0 µsV
CE = 2V ,
Output Fall Time tf 53 250 µsI
C
= 10mA, R L= 100Ω
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
DB91023-AAS/A3
30/7/97
DB91023-AAS/A3
30/7/97
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
6
10
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current vs.
Collector-emitter Voltage
0
0.5
1.0
1.5
0 1 2 3 4 5
4
2
8
Collector-emitter voltage VCE ( V )
Relative Current Transfer Ratio
vs. Ambient Temperature
IF = 1mA
VCE = 1V
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Current Transfer Ratio vs. Forward Current
Forward current IF (mA)
Current transfer ratio CTR (%)
0
400
600
800
1000
0.1 0.2 0.5 1 2 5
1200
200 VCE = 1V
TA = 25 °C
TA = 25°C
I F = 1.0mA
I F = 0.25mA
IF = 1mA
IC = 8mA
I F = 0.5mA
50
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
20
0
40
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
For ward Current vs. Ambient Temperature
100
Forward current IF (mA)
80
100
Relative current transfer ratio Collector current IC (mA)
