<7] Gallas T-13/4 STANDARD 5 $ LITE(e)\'| INFRARED EMITTING DIODE LTE-3375/LTE-3376 MALL RAD. Pol-efeee sl. 2 Tne FEATURE - . LTE-3376 IrDA Compatiable elm Special for high current and low forward voltage High power Available for pulse operating Wide viewing angle High speed response DESCRIPTION The LTE-3375/LTE-3376 are high intensity Gallium Aluminum : ; . Arsenide infrared emitting diodes mounted tn clear plastic end - - a looking packages The LTE-3375/LTE-3376 series are high . *y speed response for data communication application wo on a PACKAGE DIMENSIONS LTE-3375 LTE-3376 6505 R2 42 (20) 7] (095) 1 oe Cor | *8) 8 sa | | (215) 8 sa | 10 ue c " 590 |. [~ - { 23) (04) 590 SEE NOTE 3 | ' By (7 1 SEE NOTE 3 : : UL 25 AMIN FLAT DENOTES ANODE | (1) 25 _ FLAT DENOIES CATHODE 1 ostye ag ane own IP (02 co) | (04) y , 1 ONIN led nl ny SEE NOTE 4 SEE NCTE 4 ff a K- MK cs Ao Pe NOTES 1 All dimensions are in millimeters (Inches) 2 Tolerance is ' 0 25mm ( 010") unless otherwise noted 3 Protruded resin under flange is 1 5mm ( 059) max 4 Lead spacing Is measured where the leads emerge from thepackage 5 Specifications are subject to change without notice ABSOLUTE MAXIMUM RATINGS AT Ta=25C PARAMETER MAXIMUM RATING UNIT Power Dissipation 200 mw Peak Forward Current (300pps, 10 us pulse) 1 A Continuous Forward Current 80 mA aw Reverse Voltage ) Vv zo a] | Operating Temperature Range -55C to + 100C a Storage Temperature Range -55C to + 100C Lead Soldering Temperature . [1.6mm (.063 in.) from body] 260C for 5 Seconds ELECTRICAL OPTICAL CHARACTERISTICS AT Ta=25C TEST PARAMETER SYMBOL| PART NO. | MIN. TYP. | MAX. UNIT | CONDITION Aperture Radiant Incidence Ee LTE-3375 5.0 8.0 mWicm? | ir=50mA LTE-3376 4.0 6.0 Radiant intensity le LTE-3375 37 60 mWisr lF=50mMA LTE-3376 30 45 Peak Emission Wavelength Peak LTE-3375 840 nm IF=50MA LTE-3376 850 Spectral Line Half-Width AA 50 nm !F=50mA Forward Voltage VF LTE-3375 2.1 2.5 Vv IF=50mA LTE-3376 1.6 2.0 Reverse Current IR 100 uA Vr=5V Viewing Angle (See FIG.6) 20172 30 deg. Rise/Fall Time TriTf 30 ns 10% ~ 90% Note *Ee is measurement of the average apertured radiant incidence upon a sensing area 1 cm- In perpendicular to and centered on the mechanical axis of the lens, and 26 8mm from lens 2-22 2-23 RE nnn ret eee TYPICAL ELECTRICAL/OPTICAL CHARACTERISTIC CURVES (25C Ambient Temperature Unless Otherwise Noted) 1.0 5B O05 ua 0 740 840 940 Wavelength (nm) FIG.1 SPECTRAL DISTRIBUTION 100 =z 80 5 60 3 z 40 5 20 0 0 1.2 16 20 24 2.8 Forward Voltage (V) FIG.3 FORWARD CURRENT VS, FORWARD VOLTAGE 10.0 2 8.0 Bq 2E 6.0 su zu es 4.0 BS 20 as 9 ~ - 0 40 80 120 160 200 Foward Current (mA) FIG.S RELATIVE RADIENT INTENSITY VS. FORWARD CURRENT 120 100 80 60 40 Forward Current IF (mA) 20 0 -35-25 0 25 50 75 100125 Ambient Temperature Ta (C) FIG.2 FORWARD CURRENT VS. AMBIENT TEMPERATURE 3.0 20mA 2.5 2.0 1.5 1.0 0.5 Output Power To Value !f 0) -40 -20 0 20 40 60 Ambient Temperature Ta (C) FIG.4 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE o 10 20 \ | / 30 , 40 1.0 0.9 20 0.8 0.7 Relative Radiant Intensity WAN I Li 050.3 G1 0.2 0.4 0. _4 ry FIG.6 RADIATION DIAGRAM