DATA SHEET PHOTOCOUPLER PS2732-1,PS2733-1 HIGH COLLECTOR TO EMITTER VOLTAGE SOP MULTI PHOTOCOUPLER -NEPOC Series- DESCRIPTION The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon darlington-connected phototransistor. This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light. It is designed for high density mounting applications. FEATURES * High isolation voltage (BV = 2 500 Vr.m.s.) * High collector to emitter voltage (VCEO = 300 V: PS2732-1) (VCEO = 350 V: PS2733-1) * SOP (Small Outline Package) type * High current transfer ratio (CTR = 4 000% TYP.) * Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4 * Safety standards * UL approved: File No. E72422 * BSI approved: File No. 8219/8220 * CSA approved: File No. CA 101391 * DIN EN60747-5-2 (VDE0884 Part2) approved (Option) APPLICATIONS * Hybrid IC * Telephone/Telegraph Receiver * FAX The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PN10248EJ02V0DS (2nd edition) Date Published March 2006 CP(K) Printed in Japan The mark shows major revised points. NEC Compound Semiconductor Devices, Ltd. 1994, 2006 PS2732-1,PS2733-1 PACKAGE DIMENSIONS (in millimeters) PS2732-1 PS2733-1 4.00.5 TOP VIEW 4 1 3 2 1. Anode 2. Cathode 3. Emitter 4. Collector 0.15 +0.10 -0.05 2.0 0.10.1 2.10.2 7.00.3 4.4 2.54 0.50.3 0.4 +0.10 -0.05 0.25 M MARKING EXAMPLE No. 1 pin Mark 2732 N601 Trade Mark Type Number Assembly Lot *1 N 6 01 Week Assembled Year Assembled (Last 1 Digit) CTR Rank Name *1 Bar : Pb-Free Remark "PS" and "-1" are omitted from original type number 2 Data Sheet PN10248EJ02V0DS PS2732-1,PS2733-1 ORDERING INFORMATION Part Number Order Number Solder Plating Specification Pb-Free Packing Style Safety Standard Approval PS2732-1 PS2732-1-A Magazine case 100 pcs Standard products PS2732-1-F3 PS2732-1-F3-A Embossed Tape 3 500 pcs/reel (UL, BSI, CSA PS2732-1-F4 PS2732-1-F4-A PS2732-1-V PS2732-1-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2732-1-V-F3 PS2732-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2) PS2732-1-V-F4 PS2732-1-V-F4-A PS2733-1 PS2733-1-A Magazine case 100 pcs Standard products PS2733-1-F3 PS2733-1-F3-A Embossed Tape 3 500 pcs/reel (UL, BSI, CSA PS2733-1-F4 PS2733-1-F4-A PS2733-1-V PS2733-1-V-A Magazine case 100 pcs DIN EN60747-5-2 PS2733-1-V-F3 PS2733-1-V-F3-A Embossed Tape 3 500 pcs/reel (VDE0884 Part2) PS2733-1-V-F4 PS2733-1-V-F4-A Application *1 Part Number PS2732-1 approved) Approved (Option) PS2733-1 approved) Approved (Option) *1 For the application of the Safety Standard, following part number should be used. Data Sheet PN10248EJ02V0DS 3 PS2732-1,PS2733-1 ABSOLUTE MAXIMUM RATINGS (TA = 25C, unless otherwise specified) Parameter Symbol Ratings PS2732-1 Diode PS2733-1 Forward Current (DC) IF 50 mA Reverse Voltage VR 6 V PD/C 0.8 mW/C PD 80 mW IFP 1 A Power Dissipation Derating Power Dissipation *1 Peak Forward Current Transistor Unit Collector to Emitter Voltage VCEO Emitter to Collector Voltage VECO 0.3 V IC 150 mA PC/C 1.5 mW/C PC 150 mW BV 2 500 Vr.m.s. Operating Ambient Temperature TA -55 to +100 C Storage Temperature Tstg -55 to +150 C Collector Current Power Dissipation Derating Power Dissipation Isolation Voltage *2 300 350 *1 PW = 100 s, Duty Cycle = 1% *2 AC voltage for 1 minute at TA = 25C, RH = 60% between input and output Pins 1-2 shorted together, 3-4 shorted together. 4 Data Sheet PN10248EJ02V0DS V PS2732-1,PS2733-1 ELECTRICAL CHARACTERISTICS (TA = 25 C) Parameter Diode Transistor Symbol Conditions Forward Voltage VF IF = 10 mA Reverse Current IR VR = 5 V Terminal Capacitance Ct V = 0 V, f = 1 MHz Collector to Emitter Dark ICEO IF = 0 mA, VCE = 300 V CTR IF = 1 mA, VCE = 2 V VCE (sat) IF = 1 mA, IC = 2 mA MIN. TYP. MAX. Unit 1.15 1.4 V 5 A 30 pF 400 nA Current Coupled Current Transfer Ratio 1 500 4 000 % (IC/IF) Collector Saturation 1.0 V Voltage RI-O VI-O = 1 kVDC Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF VCC = 5 V, IC = 10 mA, RL = 100 100 s Rise Time Fall Time *1 tr *1 10 11 Isolation Resistance tf 100 *1 Test circuit for switching time VCC Pulse Input PW = 1 ms Duty cycle = 1/10 IF VOUT 50 RL = 100 Data Sheet PN10248EJ02V0DS 5 PS2732-1,PS2733-1 TYPICAL CHARACTERISTICS (TA = 25C, unless otherwise specified) TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE Transistor Power Dissipation PC (mW) 75 50 25 25 0 50 75 TA = +100 C +75 C +50 C +25 C 0 C -25 C -55 C 0.8 50 75 100 1.0 1.2 1.4 1.6 VCE = 300 V 1 000 100 10 1 0.1 -25 -50 0 25 50 75 100 Forward Voltage VF (V) Ambient Temperature TA (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 1 000 5 mA 4.5 mA 4 mA 3.5 mA 3 mA 2.5 mA 140 120 100 2 mA 80 1.5 mA 60 1 mA 40 20 IF = 5 mA 100 2 mA 1 mA 0.5 mA 10 1 IF = 0.5 mA 1 2 3 4 5 0.1 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Collector Saturation Voltage VCE (sat) (V) Collector to Emitter Voltage VCE (V) Remark The graphs indicate nominal characteristics. 6 25 10 000 Collector Current IC (mA) Forward Current IF (mA) 50 COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE 160 Collector Current IC (mA) 100 FORWARD CURRENT vs. FORWARD VOLTAGE 0.1 0 1.5 mW/C Ambient Temperature TA (C) 1 0.01 0.6 150 Ambient Temperature TA (C) 100 10 200 0 100 Collector to Emitter Dark Current ICEO (nA) Diode Power Dissipation PD (mW) 100 Data Sheet PN10248EJ02V0DS 1.2 PS2732-1,PS2733-1 CURRENT TRANSFER RATIO vs. FORWARD CURRENT 5 000 1.2 Current Transfer Ratio CTR (%) Normalized Current Transfer Ratio CTR NORMALIZED CURRENT TRANSFER RATIO vs. AMBIENT TEMPERATURE 1.0 0.8 0.6 0.4 Normalized to 1.0 at TA = 25 C, IF = 1 mA, VCE = 2 V 0.2 0 -50 -25 0 25 50 75 Sample A VCE = 2 V 4 000 Sample B 3 000 2 000 1 000 0 0.1 100 0.5 1 5 10 Ambient Temperature TA (C) Forward Current IF (mA) SWITCHING TIME vs. LOAD RESISTANCE FREQUENCY RESPONSE 20 300 VCC = 10 V, IC = 10 mA 0 Normalized Gain GV Switching Time t ( s) 50 td tf 10 5 ts -5 50 100 500 1k 1 k -15 VCE = 4 V, IC = 10 mA, -20 Vin = 0.1 Vp-p -25 2k 100 -10 1 20 RL = 10 tr 100 1 k 1 F Vin -30 0.01 Load Resistance RL () 47 RL Vout 0.1 1 10 100 Frequency f (kHz) LONG TERM CTR DEGRADATION 1.2 TA = 25 C IF = 1 mA CTR (Relative Value) 1.0 0.8 TA = 60 C 0.6 0.4 0.2 0 10 102 103 104 105 106 Time (Hr) Remark The graphs indicate nominal characteristics. Data Sheet PN10248EJ02V0DS 7 PS2732-1,PS2733-1 TAPING SPECIFICATIONS (in millimeters) 1.550.1 2.9 MAX. 7.40.1 5.50.05 1.5+0.1 -0 12.00.2 2.00.05 4.00.1 1.750.1 Outline and Dimensions (Tape) 2.40.1 4.60.1 0.3 8.00.1 Tape Direction PS2732-1-F4 PS2733-1-F4 PS2732-1-F3 PS2733-1-F3 Outline and Dimensions (Reel) 21.00.8 13.00.2 R 1.0 1001.0 2.00.5 13.00.2 3302.0 2.00.5 13.51.0 17.51.0 11.9 to 15.4 Outer edge of flange Packing: 3 500 pcs/reel 8 Data Sheet PN10248EJ02V0DS PS2732-1,PS2733-1 NOTES ON HANDLING 1. Recommended soldering conditions (1) Infrared reflow soldering * Peak reflow temperature 260C or below (package surface temperature) * Time of peak reflow temperature 10 seconds or less * Time of temperature higher than 220C 60 seconds or less * Time to preheat temperature from 120 to 180C 12030 s * Number of reflows Three * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) Package Surface Temperature T (C) Recommended Temperature Profile of Infrared Reflow (heating) to 10 s 260C MAX. 220C to 60 s 180C 120C 12030 s (preheating) Time (s) (2) Wave soldering * Temperature 260C or below (molten solder temperature) * Time 10 seconds or less * Preheating conditions 120C or below (package surface temperature) * Number of times One (Allowed to be dipped in solder including plastic mold portion.) * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (3) Soldering by soldering iron * Peak temperature (lead part temperature) 350C or below * Time (each pins) 3 seconds or less * Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of 0.2 Wt% is recommended.) (a) Soldering of leads should be made at the point 1.5 to 2.0 mm from the root of the lead. (b) Please be sure that the temperature of the package would not be heated over 100C. Data Sheet PN10248EJ02V0DS 9 PS2732-1,PS2733-1 (4) Cautions * Fluxes Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent. 2. Cautions regarding noise Be aware that when voltage is applied suddenly between the photocoupler's input and output or between collector-emitters at startup, the output transistor may enter the on state, even if the voltage is within the absolute maximum ratings. 3. Measurement conditions of current transfer ratios (CTR), which differ according to photocoupler Check the setting values before use, since the forward current conditions at CTR measurement differ according to product. When using products other than at the specified forward current, the characteristics curves may differ from the standard curves due to CTR value variations or the like. Therefore, check the characteristics under the actual operating conditions and thoroughly take variations or the like into consideration before use. USAGE CAUTIONS 1. Protect against static electricity when handling. 2. Avoid storage at a high temperature and high humidity. 10 Data Sheet PN10248EJ02V0DS PS2732-1,PS2733-1 SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884) Parameter Symbol Speck Unit Application classification (DIN VDE 0109) for rated line voltages 150 Vr.m.s. IV for rated line voltages 300 Vr.m.s. III Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21 Dielectric strength Maximum operating isolation voltage Test voltage (partial discharge test, procedure a for type test and random test) UIORM 710 Vpeak Upr 850 Vpeak Upr 1 140 Vpeak UTR 4 000 Vpeak Upr = 1.2 x UIORM, Pd < 5 pC Test voltage (partial discharge test, procedure b for all devices test) Upr = 1.6 x UIORM, Pd < 5 pC Highest permissible overvoltage Degree of pollution (DIN VDE 0109) 2 Clearance distance >5 mm Creepage distance >5 mm Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI Material group (DIN VDE 0109) 175 III a Storage temperature range Tstg -55 to +150 C Operating temperature range TA -55 to +100 C Ris MIN. 10 12 Ris MIN. 10 11 Package temperature Tsi 150 C Current (input current IF, Psi = 0) Isi 300 mA Power (output or total power dissipation) Psi 500 mW Ris MIN. 10 Isolation resistance, minimum value VIO = 500 V dc at TA = 25 C VIO = 500 V dc at TA MAX. at least 100 C Safety maximum ratings (maximum permissible in case of fault, see thermal derating curve) Isolation resistance VIO = 500 V dc at TA = 175 C (Tsi) Data Sheet PN10248EJ02V0DS 9 11 PS2732-1,PS2733-1 When the product(s) listed in this document is subject to any applicable import or export control laws and regulation of the authority having competent jurisdiction, such product(s) shall not be imported or exported without obtaining the import or export license. * The information in this document is current as of March, 2006. 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