© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. P0 1Publication Order Number:
NVMFS6B03NL/D
NVMFS6B03NL
Advance Information
Power MOSFET
100 V, 4.8 mW, 145 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS6B03NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage VGS ±16 V
Continuous Drain Cur
-
rent RqJC (Notes 1, 2,
3) Steady
State
TC = 25°CID145 A
TC = 100°C 102
Power Dissipation
RqJC (Notes 1, 2) TC = 25°CPD198 W
TC = 100°C 99
Continuous Drain Cur
-
rent RqJA (Notes 1, 2,
3) Steady
State
TA = 25°CID20 A
TA = 100°C 14
Power Dissipation
RqJA (Notes 1 & 2) TA = 25°CPD3.9 W
TA = 100°C 2.0
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 520 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175 °C
Source Current (Body Diode) IS160 A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 60 A, L = 0.1 mH, RG = 25 W)
EAS 180 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 0.76 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 38
1. The e ntire application environment impacts t he thermal resistance values shown,
they are not constants and a re only valid f or the particular c onditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
MARKING
DIAGRAM
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A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
100 V 4.8 mW @ 10 V 145 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
NVMFS6B03NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ67.3 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 80 V TJ = 25°C 10 mA
TJ = 125°C 100
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 16 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 3.0 V
Negative Threshold Temperature Coefficient VGS(TH)/TJ−8.1 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 20 A 3.8 4.8 mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 50 V
4200
pF
Output Capacitance COSS 760
Reverse Transfer Capacitance CRSS 31
Total Gate Charge QG(TOT)
VGS = 10 V, VDS = 80 V; ID = 50 A
58
nC
Threshold Gate Charge QG(TH) 6.2
Gate−to−Source Charge QGS 19
Gate−to−Drain Charge QGD 17
Plateau Voltage VGP 5.4 V
Gate Resistance RGTJ = 25°C 1.0 W
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 80 V,
ID = 50 A, RG = 1.0 W
16
ns
Rise Time tr46
T urn−Off Delay Time td(OFF) 29
Fall Time tf11
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 50 A TJ = 25°C 0.9 1.2 V
TJ = 125°C 0.8
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
67
ns
Charge Time ta35
Discharge Time tb31
Reverse Recovery Charge QRR 120 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS6B03NL
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.01.00
0
20
100
654210
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE VOLTAGE (V) ID, DRAIN CURRENT (A)
9.08.07.0 107.56.56.04.5
3
7
25 302015
4.5
5.0
8.0
3.0
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.2
1007060402010
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
4.5 V
4.0 V
VDS ≤ 10 V
TJ = 25°C
TJ = 125°C
TJ = −55°C
6
ID = 20 A
TJ = 25°C
VGS = 6.0 V
TJ = 25°C
VGS = 10 V
50
ID = 20 A
VGS = 10 V
TJ = 25°C
TJ = 125°C
3
4
8
1.0
1.4
0.4
1.6
10
120
10
5.5 V
2.0 0
40
100
80
140
20
120
11
3.5
2.0
2.2
60
80
4.0
7.0
2.5
5.0 V
VGS = 6 V to 10 V
40
140
60
5.0 45 5035 40
0.6
10K
1K
1
0.5 1.5
5.5 8.5 9.5
5
9
5.5
6.0
6.5
7.5
1.8
TJ = 150°C
100K
30 50 80 90
100
10
175
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
100101
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.40.3
0
20
40
100
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
QT
VDS = 50 V
ID = 50 A
VGS = 10 V
td(on)
tr
tf
TJ = 25°C
10
100
1.2
0
2
12
020
525 40 45 60
TJ = 25°C
VDS = 50 V
ID = 50 A
120
160
200
3010
1000
10,000
6
8
10
4
Qgs Qgd
td(off)
50
0.5
60
80
140
180
15 35 55
1.0 1.1
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
1000
ID, DRAIN CURRENT (A)
VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
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5
TYPICAL CHARACTERISTICS
Figure 12. GFS vs. ID
ID, DRAIN CURRENT (A)
12080200
0
20
60
80
100
140
PULSE TIME (sec)
0.010.001 1010.00010.00001 0.10.000001
0.001
0.01
0.1
1
10
100
GFS, SMALL−SIGNAL FORWARD
TRANSFER CONDUCTANCE (S)
R(t) (°C/W)
100 1000
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse NTMFS6B03NL, 650 mm2, 2 oz, Cu Single Layer
Pad
Figure 13. IPEAK vs. TAV
TAV, TIME IN AVALANCHE (sec)
10E−31E−3100E−6
1
10
100
IPEAK, DRAIN CURRENT (A)
Figure 14. Thermal Response
40 60 100 140
40
120
100°C
25°C
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS6B03NLT1G 6B03NL DFN5
(Pb−Free) 1500 / Tape & Reel
NVMFS6B03NLWFT1G 6B03WF DFN5
(Pb−Free, Wettable Flanks) 1500 / Tape & Reel
NVMFS6B03NLT3G 6B03 DFN5
(Pb−Free) 5000 / Tape & Reel
NVMFS6B03NLWFT3G 6B03WF DFN5
(Pb−Free, Wettable Flanks) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS6B03NL
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6
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 c L
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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UBLICATION ORDERING INFORMATION
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Phone: 421 33 790 2910
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Phone: 81−3−5817−1050
NVMFS6B03NL/D
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