BD159 Plastic Medium Power NPN Silicon Transistor This device is designed for power output stages for television, radio, phonograph and other consumer product applications. http://onsemi.com Features * Suitable for Transformerless, Line-Operated Equipment * Thermopadt Construction Provides High Power Dissipation Rating 0.5 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS for High Reliability * Pb-Free Package is Available* IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIIIIIII III IIIIIIIIIII IIII IIII III IIIIIIIIIII IIII IIII III MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol Value Unit VCEO 350 Vdc Collector-Base Voltage VCB 375 Vdc Emitter-Base Voltage VEB 5.0 Vdc IC 0.5 1.0 Adc Base Current IB 0.25 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 20 0.16 W mW/_C TJ, Tstg -65 to +150 _C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case qJC 6.25 _C/W Collector Current - Continuous - Peak Operating and Storage Junction Temperature Range TO-225 CASE 77 STYLE 1 3 2 1 MARKING DIAGRAM THERMAL CHARACTERISTICS YWW BD159G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Y WW BD159 G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION Device BD159 BD159G Package Shipping TO-225 500 Units/Box TO-225 (Pb-Free) 500 Units/Box *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 February, 2006 - Rev. 4 1 Publication Order Number: BD159/D BD159 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIII III IIII IIIIIIIIIIIIIIIIIIIII IIIII IIII IIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 350 - Vdc Collector Cutoff Current (at rated voltage) ICBO - 100 mAdc Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO - 100 mAdc hFE 30 240 - OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 1.0 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 50 mAdc, VCE = 10 Vdc) 1.0 PD, POWER DISSIPATION (WATTS) 25 V, VOLTAGE (VOLTS) 20 15 0.8 VBE @ IC/IB = 10 0.6 VBE @ VCE = 10 V 0.4 VCE(sat) @ IC/IB = 10 10 0.2 TJ = + 25C IC/IB = 5.0 5.0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (C) 140 0 160 10 20 IC, COLLECTOR CURRENT (AMPS) Figure 1. Power-Temperature Derating Curve 1.0 0.7 0.5 500 ms The Safe Operating Area Curves indicate IC - VCE limits below which the device will not enter secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a catastrophic failure. To insure operation below, the maximum TJ, power-temperature derating must be observed for both steady state and pulse power conditions. 10 ms dc 0.2 0.1 0.07 0.05 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.03 0.02 0.01 500 Figure 2. "On" Voltages 1.0 ms TJ = 150C 0.3 30 50 100 200 300 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 200 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 3. DC Safe Operating Area 300 VCE = 10 V VCE = 2.0 V hFE , DC CURRENT GAIN 200 TJ = 150C 100 + 100C 70 50 + 25C 30 20 10 - 55C 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mAdc) Figure 4. Current Gain http://onsemi.com 2 70 100 200 300 500 BD159 PACKAGE DIMENSIONS TO-225 CASE 77-09 ISSUE Z -B- U F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077-01 THRU -08 OBSOLETE, NEW STANDARD 077-09. C Q M -A- 1 2 3 H K J V G R 0.25 (0.010) S M A M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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