ss SEMICONDUCTOR = a TECHNICAL DATA MRF421 MRF421MP The RF Line 100 W(PEP) 30 MHz RF POWER TRANSISTORS NPN SILICON NPN SILICON RF POWER TRANSISTOR ... designed primarily for application as a high-power linear ampli- fier from 2.0 to 30 MHz. e@ Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W(PEP) Minimum Gain = 10 dB Efficiency = 40% @ intermodulation Distortion @ 100 W (PEP) IMD = -30 dB (Min) e@ 100% Tested for Load Mismatch at ali Phase Angles with 30:1 VSWR STYLE 1 PIN'1 EMITTER 2 BASE re A 3 EMITTER u 4 COLLECTOR A it MAXIMUM RATINGS Q os 8 x 4 Rating Symbol Value Unit J Ss { Collector-E mitter Voltage VcEO 20 Vode i. } c iH ! . Coltector-Base Voltage VcBo 45 Vde . re _ | SeAIING Emitter-Base Voltage VEBO 3.0 Vdc Collector Current Continuous ic 20 Adc NOTES 1 DIMENSIONING AND TOLERANCING PER Withstand Current 105 - 30 Adc ANS! Y14 5M, 1982 Total Device Dissipation @ Tc = 25C Pp 290 Watts 2 CONTROLLING DIMENSION INCH 0; 0, . _. . Derate above 25C 1.66 whc | [ us { INCHES St T R T . % Om | MIN, | MAX | MIN | MAX orage Temperature Range stg 66 to +150 A 12am 1 21a, 0960] O80 MRF421MP is for ordering an hfe matched pair. g | Me a ass ooo | Oj 549.) 596 1 o2t6 | 0235 ! | e | zie] 279 | oo | ono | 4 368 | 452 | Otdd ou | J} ome | 017 1 9003 | oo | KR] mm] - [oa] - | THERMAL CHARACTERISTICS Al Nom | tou | Characteristic Symbol Mex Unit [ a, 293] 39 j ons | 010 | s | a | 625] 647 [026 | 028s Thermal Resistance, Junction to Case Resc 06 cw | U | 1829 | 1854, 0720 | 9730 CASE 211-11 ae MOTOROLA RF DEVICE DATA 2-612 MRF421, MRF421MP ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) | Characteristic I Symbol [ Min | Typ { Max lI Unit | OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViBRICEO 20 ~ ~ Vde {ig = 50 mAdc, Ig = 0) Collector-Emitter Breakdown Voltage ViBRICES 45 ~ ~ Vde {lg = 200 mAdc, Vge_E = 0} Collector-Base Breakdown Voltage V(BRICBO 45 _ _ Vde (ig = 200 mAdc, te = 0) Emitter-Basa Breakdown Voltage V(BRIEBO 3.0 - ~ Vde (Ig = 10 mAde, tc = 0) Collector Cutoff Current Ices - - 10 mAdc (Voce = 16 Vdc, Vge = 0, Te = 25C) ON CHARACTERISTICS DC Current Gain hee 10 30 - - (Ig = 5.0 Ade, Vcg = 5.0 Vde) DYNAMIC CHARACTERISTICS Output Capacitance Cob _ 650 800 pF (Vicg = 12.5 Vdc, Ig = 0, f= 1.0 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain Gpe 10 12 - a8 (Veg = 12.5 Vde, Poy, = 100 W, ICimax) = 10 Adc, loq = 180 mAdc, f = 30, 30.001 MHz) Callector Efficiency n 40 - _ % (Vcc = 12.5 Vde, Pour = 100 W, Io {max} = 10 Adc, icq = 150 mA, f = 30, 30.001 MHz) Intermodulation Distortion (1) iMo - ~33 ~30 dB (VE = 12.5 Vide, Poy, = 100 Watts, Ic = 10 Adc, lca = 150 mA, f = 30, 30.001 MHz) (1) To proposed EIA method of measurement. Reference peak envelope power. FIGURE 1 30 MHz TEST CIRCUIT SCHEMATIC + > Too 12.5 Vac aN RF Output 3 L C1,02,C4 1470-780 pF, ARCO 469 2-10.92, 1 Watt Carbon c3- 80-480 pF, ARCO 466 cR1 IN4997 C5,C7,C10 ERIE 0.1 uF, 100 V Li 3 Turns, #16 Wire, 5/16 1.0., 5/16" Long C6 - MALLORY 600 uF @ 16 V Electrolytic L2 12 Turns, #16 Enamaled Wire Closewound, 1/4 1.0. ca 100 HF,18 V Electrolytic ta- 13/4 Turns, 1/8" Tubing, 3/8 1.D., 3/8" Long ca - 1000 pF, 350 V UNDERWOOD La 10 4H Molded Choke At 10 11, 25 Watt Wirewound LS 10 Ferrite Beads - FERROXCUBE #56-590.65/3B ee MOTOROLA RF DEVICE DATA 2-613 MRF421, MRF421MP FIGURE 2 OUTPUT POWER versus INPUT POWER FIGURE 3 - OUTPUT POWER versus SUPPLY VOLTAGE 180.- To - ~ T _ veedusy | _| : wo --so4a | | (cg = 150mA = 190 mA _ TWOTONETEST. 0 30.001 Me (= 30, 30.001 MHz 20; -- 80 40 Pout, OUTPUT POWER (WATTS PEP} Pout. QUTPUT POWER (WATTS PEP) 2 3S 0 40 BO 12 16 8.0 10 12 14 16 Pin, INPUT POWER (WATTS PEPI VC, SUPPLY VOLTAGE (VOLTS) FIGURE 5 INTERMODULATION DISTORTION FIGURE 4 POWER GAIN versus FREQUENCY versus OUTPUT POWER @ = Veco 125V 3 eq * 150 mA 20 = f 30, 30.001 MHz o a B = 3 z 15 2 Tt ao 9 5 = 3 2 10 s Voc =125V z oa (eg 150 mA wi 5.0 Pout > 100 W PEP z Dp 5th Order = 0 10 0 20 40 60 80 100 1 140 1, FREQUENCY (MHz! Pout, QUTPUT POWER (WATTS PEP) FIGURE 6 OC SAFE OPERATING AREA FIGURE 7 SERIES EQUIVALENT IMPEDANCE = = < & =z a ec ec 2 3 e PS 3 Voc = 12.5V = (ca=180mA 8 Pout = 100 W PEP. - 3 FREQUENCY 2a MHz Ohms 30 0.7 -J.6 15 139-Jt.1 18 2.8 -21.9 Vee. COLLECTOR-EMITTER VOLTAGE (VOLTS} 2.0 5.35 -J2.2 MOTOROLA AF DEVICE DATA 2-614 MRF421, MRF421MP FIGURE 8 OUTPUT CAPACITANCE versus FREQUENCY FIGURE 9 - OUTPUT RESISTANCE versus FREQUENCY 20.000 28 Voeo=12.6V Ica = 50 mA Pout = 100 W PEP Voc = 125V 16.000 icq = 150 mA Poui = 100 W PEP 12,000 Cour, PARALLEL EQUIVALENT OUTPUT CAPACITANCE (pF) Rour, PARALLEL EQUIVALENT QUTPUT RESISTANCE (OHMS) 15 20 3.0 60 70 1a 18 20 30 5 20 30 5.0 70 10 1 20 30 f, FREQUENCY (MH2) 1, FREQUENCY {MHz} a MOTOROLA RF DEVICE DATA 2-615