Feb.1999
FK20UM-5
10.5MAX. 4.5 1.3
φ 3.6
3.2
16
12.5MIN.
3.8MAX.
1.0
0.8
2.54 2.54
4.5MAX.
0.5 2.6
7.0
qwe
q GATE
w DRAIN
e SOURCE
r DRAIN
r
wr
q
e
¡VDSS ................................................................................250V
¡rDS (ON) (MAX) ..............................................................0.24Ω
¡ID ......................................................................................... 20A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg—
250
±30
20
60
20
60
150
–55 ~ +150
–55 ~ +150
2.0
V
V
A
A
A
A
W
°C
°C
g
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
Typical value
MAXIMUM RATINGS (Tc = 25°C)
OUTLINE DRAWING Dimensions in mm
TO-220
MITSUBISHI Nch POWER MOSFET
FK20UM-5
HIGH-SPEED SWITCHING USE
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
Parameter ConditionsSymbol Ratings Unit
Feb.1999
—
—
—
—
3
0.19
1.9
13.0
1400
280
55
25
50
150
65
1.5
—
—
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 250V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 150V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
MITSUBISHI Nch POWER MOSFET
FK20UM-5
HIGH-SPEED SWITCHING USE
V
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
250
±30
—
—
2
—
—
8.5
—
—
—
—
—
—
—
—
—
—
—
—
±10
1
4
0.24
2.4
—
—
—
—
—
—
—
—
2.0
0.83
150
200
160
120
80
40
0200150100500
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
23 5710
1
10
0
23 5710
2
23 5710
3
T
C
= 25°C
Single Pulse
tw=10µs
100µs
1ms
10ms
DC
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(°C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol UnitParameter Test conditions Limits
Min. Typ. Max.
PERFORMANCE CURVES
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20UM-5
HIGH-SPEED SWITCHING USE
40
32
24
16
8
00 4 8 12 16 20
T
C
= 25°C
V
DS
= 50V
Pulse Test
10
2
7
5
3
2
10
0
10
0
23 5710
1
10
1
7
5
3
2
23 5710
2
T
C
= 25°C
V
DS
= 10V
Pulse Test
125°C 75°C
50
40
30
20
10
00 1020304050
P
D
= 150W
T
C
= 25°C
Pulse Test
V
GS
= 20V
10V
6V
5V
7V
20
16
12
8
4
00 4 8 12 16 20
P
D
= 150W
T
C
= 25°C
Pulse Test
V
GS
=20V 10V
5.5V
5V
6V
4V
4.5V
20
16
12
8
4
00 4 8 12 16 20
I
D
= 40A
T
C
= 25°C
Pulse Test
20A
10A
02310
–1
5710
0
23 5710
1
23 5710
2
0.5
0.4
0.3
0.2
0.1
T
C
= 25°C
Pulse Test
V
GS
= 10V
20V
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE y
fs
(S)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20UM-5
HIGH-SPEED SWITCHING USE
5.0
4.0
3.0
2.0
1.0
0–50 0 50 100 150
V
DS
= 10V
I
D
= 1mA
20
16
12
8
4
00 20406080100
V
DS
= 50V
200V
Tch
= 25°C
I
D
= 20A
100V
23 5710
1
10
3
7
5
3
2
10
2
7
5
3
2
23 5710
2
10
0
10
1
Tch = 25°C
V
DD
= 150V
V
GS
= 10V
R
GEN
= R
GS
= 25Ω
t
f
t
d(off)
t
r
t
d(on)
23 5710
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
5
3
2
23 5710
1
23 5710
0
23
Ciss
Tch = 25°C
f = 1MHz
V
GS
= 0V
Coss
Crss
40
32
24
16
8
00 0.8 1.6 2.4 3.2 4.0
T
C
= 125°C
25°C
75°C
V
GS
= 0V
Pulse Test
10
0
7
5
3
2
10
–1
0
10
1
7
5
3
2
50 100 150 200 250
V
GS
= 10V
I
D
= 1/2I
D
Pulse Test
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
SOURCE CURRENT I
S
(A)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
CHANNEL TEMPERATURE Tch (°C)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK20UM-5
HIGH-SPEED SWITCHING USE
1.4
1.2
1.0
0.8
0.6
0.4 –50 0 50 100 150
V
GS
= 0V
I
D
= 1mA
10
–4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
23 57 23 57 23 57 23 57
10
0
23 57
10
1
23 57
10
2
10
–3
10
–2
10
–1
10
–2
P
DM
tw
D= T
tw
T
D=1
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
10
1
10
2
7
5
3
2
10
1
7
5
3
2
10
0
d
is/
d
t
= –100A/µs
V
GS
= 0V
V
DD
= 150V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
5
3
2
10
1
23 5710
2
10
2
7
5
3
2
23 5710
3
10
1
3
2
10
1
7
5
5
7
5
7
5
3
2
10
0
I
S
= 20A
V
GS
= 0V
V
DD
= 150V
I
rr
t
rr
T
ch
= 25°C
T
ch
= 150°C
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
REVERSE RECOVERY TIME t
rr
(ns)
REVERSE RECOVERY CURRENT I
rr
(A)
REVERSE RECOVERY CURRENT I
rr
(A)
SOURCE CURRENT I
S
(A)
DIODE REVERSE VS.
SOURCE CURRENT CHARACTERISTIC
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(ns)
SOURCE CURRENT d
is
/d
t
(–A/µs)
DIODE REVERSE VS.
SOURCE CURRENT d
is
/d
t
CHARACTERISTIC
(TYPICAL) TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch–c)
(°C/W)
