i MARS ES TERS ne MMBFJ201 MMBFJ202 J201 J202 SOT-23 cS) Mark: 62P /62Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. Absolute Maximum Ratings* TA = 25C unless otherwise noted Discrete POWER & Signal Technologies Symbol Parameter Value Units Voe Drain-Gate Voltage 40 Vv Vas Gate-Source Voltage - 40 Vv lor Forward Gate Current 50 mA Ty ,Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units J201 / J202 *MMBFJ201 Pp Total Device Dissipation 625 350 mW Derate above 25C 5.0 2.8 mW/C Roc Thermal Resistance, Junction to Case 83.3 C/W Resa Thermal Resistance, Junction to Ambient 200 357 C/W * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation COCrsAdWn / LOCrPAGININ / cOcr / LoerElectrical Characteristics N-Channel General Purpose Amplifier (continued) TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min | Max | Units OFF CHARACTERISTICS Vsryess Gate-Source Breakdown Voltage lg=-1.0 LA, Vos = 0 - 40 Vv less Gate Reverse Current Ves = - 20 V, Vos = 0 -100 pA Vasi(of) Gate-Source Cutoff Voltage Vos = 20 V, Ip= 10 nA J201 -0.3 -1.5 Vv J202 -0.8 -40 Vv ON CHARACTERISTICS Ipss Zero-Gate Voltage Drain Current* Vos = 20 V, las = 0 J201 0.2 1.0 mA J202 0.9 45 mA SMALL SIGNAL CHARACTERISTICS Yfs Forward Transfer Admittance Vos = 20, f = 1.0 kHz J201 500 umhos J202 1000 Lumhos *Pulse Test: Pulse Width < 300 pS Typical Characteristics Parameter Interactions 100 1000 = dis. Ipss @ Vos = 10V, Vag = 0 PULSED = 50 | fps @ Vos = 100 mV, Ves = 0 500 ~ Vesiorr) @ Vps = 10V, Ip = 1.0 < lu = 2 | a ES 10 100 Bz 2S 50 50 =z2 ca Co [Le B81 os 1.0 10 1.0 0.1 5.0 -10 Vesiorr) ~ GATE CUTOFF VOLTAGE (V) Ips DRAIN ON RESISTANCE (82) Common Drain-Source Ta = 25C TYP Vesiorr) = -4.5V Ves =0V -0.5V -1.0V -1.5v | 2.0V 2.5V -3.0V Ip DRAIN CURRENT (mA) 0 1.0 2.0 3.0 4.0 Vps DRAIN-SOURCE VOLTAGE (V) 5.0 COCrsAdWn / LOCrPAGININ / cOcr / LoerN-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Ip ORAIN CURRENT (mA) Ig. less GATE LEAKAGE CURRENT (pA) gs TRANSCONDUCTANCE (mmhos) 35 30 25 20 1.0k 100 1.0 Transfer Characteristics Vest | TT | | | \ Vosiorr) = 4.5V \ Ta =-55C X I Ta = +25C ci Ta = +125 C | \ | Vesorn = -2.6V PNCNN 7 Ta = -88 Cf __ | Ta =+25C RNS OT, = +125 C >> A IN AA | 0 -10 -20 -30 -40 -50 Ves GATE-SOURCE VOLTAGE (V) Leakage Current vs. Voltage Ip =10 mA Ip = 1.0 mA Ta = +85C -lcss Ta =+25C 0 50 6110 15 202k Vpg DRAIN-GATE VOLTAGE (V) Transconductance vs. Drain Current Ta = 55C Ta = +25C Ta =+125C Vestorr) = 2-5V, Vesiorr) = 5.5V 0.1 1.0 10 Ip DRAIN CURRENT (mA) gis TRANSCONDUCTANCE (mmhos) en NOISE VOLTAGE (nV/\/Hz} Gos ~ OUTPUT CONDUCTANCE (u:mhos} 100 50 20 10 5.0 2.0 1.0 Transfer Characteristics Vos = 10V - Vesiorr) = 4.5V T, = -85C Ty = +25 C Ta = +125 C Vestorr) = 2-6V Ta = 4125 Ta = +28 C T, = -55C -10 -20 -30 -40 -50 Vos GATE-SOURCE VOLTAGE (V) Noise Voltage vs. Frequency Ip =10mA Vpg = 10V BW = 6.0 Hz @ f= 10 Hz, 100 Hz = 0.2f @ f = 1.0 kHz 0.01 0.03 0.1 0.51.02.0 10 50 100 f FREQUENCY (kHz) Output Conductance vs. Drain Current 100 : Ta = 25C 50 f= 1.0 kHz 10V Vesiorr) = 5.5V bo 10 Vos = 5.1 2.5V 5.0 1.0 01 05 1.0 50 10 Ip DRAIN CURRENT (mA) COCrsAdWn / LOCrPAGININ / cOcr / LoerN-Channel General Purpose Amplifier (continued) Typical Characteristics (continued) Capacitance vs. Voltage 10 1.0 (Vo C,, , CAPACITANCE (pF) 0.1 0 40 -80 Ves - GATE-SO Cy (Vog = 5.0V) C,, (Vps = 0) 5 = 10V) f= 0.1 - 1.0 MHz -12 -20 URCE VOLTAGE (V} -16 Common Source Characteristics Input Admittance 10 Voc = 10V Ip =10mA (Cs) - 1.0 Qiss (Bigs) INPUT ADMITTANCE (mmhos} 0.1 100 500 1000 f - FREQUENCY (MHz) ~ Output Admittance 3 10 E Voc = 10V ai Ip =10mA = (cS) x eK E = a < 10 K > a Ee => Goss X (0.1) t 4 3 04 500 f FREQUENCY (MHz) 1000 = o eo Forward Transadmittance 100 Voc =10V Ip = 10mA (cS) 10 100 500 1000 f FREQUENCY (MHz) g-, (b;,) FORWARD TRANSADMITTANCE (mmti Reverse Transadmittance Voge =10V Ip = 10 mA (Cs) 100 500 f FREQUENCY (MHz) 1000 Os (b,,) - REVERSE TRANSFER ADMITTANCE (mmhos) COCrsAdWn / LOCrPAGININ / cOcr / LoerN-Channel General Purpose Amplifier (continued) Common Gate Characteristics Input Admittance 100 Voc =10V Ip = 10 mA (CG) 10 Yigs (Bigs) INPUT ADMITTANCE (mmhos) 1.0 100 500 f FREQUENCY (MHz} Output Admittance Voc = 10V Ib =10mA (CG) Yogs X (0.1) Gogs (Bogs) OUTPUT CONDUCTANCE (mmhos) 100 500 f FREQUENCY (MHz} Sig (by) - FORWARD TRANSFER ADMITTANCE (mmhos) rq (B,g} - TRANSADMITTANCE (mmhos) 10 1.0 0.1 0.1 0.01 Forward Transadmittance Og Voc =10V Ip =10mA (CG) 100 500 1000 f FREQUENCY (MHz) Reverse Transadmittance Vog = 10V Ip =10mA (CG) 100 500 1000 f FREQUENCY (MHz) COCrsAdWn / LOCrPAGININ / cOcr / LoerN-Channel General Purpose Amplifier (continued) COCrsAdWn / LOCrPAGININ / cOcr / Loer