1. Product profile
1.1 General description
The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband
GaN HEMTs usable from DC to 3.5 GHz.
[1] Pulsed RF; tp= 100 s; =10%.
[1] 2-Tone CW; f = 100 kHz.
1.2 Features and benefits
Frequency of operation is from DC to 3.5 GHz
200 W general purpose broadband RF Power GaN HEMT
Excellent ruggedness (VSWR = 10 : 1)
High voltage operation (50 V)
Thermally enhanced package
CLF1G0035-200P;
CLF1G0035S-200P
Broadband RF power GaN HEMT
Rev. 1 — 22 April 2016 Product data sheet
Table 1. CW and pulsed RF application information
Typical RF performance at Tcase = 25
C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal f PLGpD
(MHz) (W) (dB) (%)
1-Tone CW 1700 200 11 47
2000 200 10 52
2300 200 9 58
1-Tone pulsed [1] 1700 200 14 46
2000 200 14 48
2300 200 13 51
Table 2. 2-Tone CW application information
Typical 2-Tone performance at Tcase = 25
C; IDq = 600 mA; VDS = 50 V in a class-AB broadband
demo board.
Test signal f PL(PEP) IMD3
(MHz) (W) (dBc)
2-Tone CW [1] 1700 120 40
2000 120 45
2300 120 43
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 2 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
1.3 Applications
2. Pinning information
[1] Connected to flange.
3. Ordering information
Commercial wireless infrastructure
(cellular, WiMAX)
Industrial, scientific, medical
Radar Jammers
Broadband general purpose amplifier EMC testing
Public mobile radios Defense application
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
CLF1G0035-200P (SOT1228A)
1drain1
2drain2
3gate1
4gate2
5source [1]
CLF1G0035S-200P (SOT1228B)
1drain1
2drain2
3gate1
4gate2
5source [1]
34
5
12
1
5
2
3
4
aaa-005775
34
12
1
5
2
3
4
aaa-005775
Table 4. Ordering information
Type number Package
Name Description Version
CLF1G0035-200P - flanged ceramic package; 2 mounting holes; 4 leads SOT1228A
CLF1G0035S-200P - earless flanged ceramic package; 4 leads SOT1228B
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 3 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
4. Limiting values
5. Thermal characteristics
[1] Tj is measured via IR scan with case temperature of 85 C and power dissipation of 220 W.
6. Characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 150 V
VGS gate-source voltage 8+3 V
IGF forward gate current external RG = 5 -72mA
Tstg storage temperature 65 +150 C
Tjjunction temperature measured via IR scan - 250 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tj = 200 C[1] 0.52 K/W
Table 7. DC Characteristics
Tcase = 25
C per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =7 V; IDS =24mA 150 - - V
VGS(th) gate-source threshold voltage VDS = 0.1 V; IDS =24mA 2.4 21.3 V
IDSX drain cut-off current VDS =10V; V
GS = 3 V - 17.5 - A
gfs forward transconductance VDS =10 V; V
GS =0V - 4 - S
Table 8. RF Characteristics
Test signal: pulsed RF; f = 3000 MHz; tp= 100
s;
= 10 %; RF performance at VDS =50V;
IDq = 660 mA; Tcase =25
C; unless otherwise specified in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
Ddrain efficiency PL= 200 W 39 44 - %
Gppower gain PL= 200 W 9 11 - dB
RLin input return loss PL= 200 W - 10 - dB
trrise time PL= 200 W - 9 - ns
tffall time PL= 200 W - 9 - ns
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 4 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
7. Application information
7.1 Demo circuit
Fig 1. The broadband amplifier (1700 to 2300 MHZ) demo circuit outline
108.3 mm
67.4 mm
amp00082
Pot
GND
S
G
D
Vs
T_c
GND
T_b
GND
VG
VF
GND
I
TTL
Q1
Q2
L1
L2
L3
L4
R1
R2
R3
R4
R5
R6
R7
R8
L5 L7
L6 L8
L9
L10
Q3
R9
C1
C2 C3
C4
C5
C6
C7
C8
C9
C11
C12
C13
C14
C16
C15
C17
C18
C19
C20
C21
C22
C23
C24
C25
C26
C28
C27
C29
C30
Cutmetal R10
R11
C31
C32
C33
J1
J2
J3 J4
J5
Table 9. List of components
See Figure 1 and Figure 2.
Component Description Value Remarks
C1 electrolytic capacitor Panasonic EEE-TK1J471AM
C2, C3 multilayer ceramic chip capacitor 10 F, 100 V TDK C5750X7S2A106M
C4, C5 multilayer ceramic chip capacitor 2.2 F, 100 V Murata GRM32ER72A225KA35L
C6, C7 multilayer ceramic chip capacitor 0.1 F, 250 V Murata GRM32DR72E104KW01L
C8, C9 multilayer ceramic chip capacitor 1000 pF PassivePlus 1111N
C11, C12 multilayer ceramic chip capacitor 240 pF Passive Plus 0805N
C13, C14 multilayer ceramic chip capacitor 1.8 pF Passive Plus 0805N
C15, C16, C26, C27,
C28, C29, C30
multilayer ceramic chip capacitor 5.6 pF Passive Plus 0805N
C17 multilayer ceramic chip capacitor 0.9 pF ATC 100B
C18 multilayer ceramic chip capacitor 0.2 pF Passive Plus 0805N
C19 multilayer ceramic chip capacitor 1.6 pF Passive Plus 0805N
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 5 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
C20, C21, C24, C25 multilayer ceramic chip capacitor 0.2 pF Passive Plus 0805N
C22, C23 multilayer ceramic chip capacitor 0.5 pF Passive Plus 0805N
C31 multilayer ceramic chip capacitor 100 nF, 50 V Multicomp U0805W104K1HRN-P4
C32 multilayer ceramic chip capacitor 1 F, 100 V Murata GRM31CR72A105KA01L
C33 multilayer ceramic chip capacitor 0.6 pF Passive Plus 0805N
J1, J2 header 2 pin 0.1”
J3 header 1 pin 0.1”
J4, J5 spade connector -
L1, L2 inductor 18 nH, 1.4 A Coil-Craft 0805HQ-18NX L
L3, L4 ferrite chip bead 600 Laird MI0805K601R-10
L5, L6, L7, L8 inductor 12 nH, 4.4 A Coil-Craft 0908SQ-8N1 L
L9, L10 ferrite chip bead - Fair-Rite 2743019447
Q1 transistor - CLF1G0035-200P
Q2 transistor - NXP BC857B
Q3 transistor - NXP PSMN8R2-80YS
R1 resistor 1 SMD 0805
R2 resistor 2.2 kSMD 0805
R3, R4 resistor 100 SMD 2010
R5, R6 resistor 50 SMD 2010
R7, R8, R10, R11 resistor 5.1 SMD 0805
R9 resistor 0.010 Susumu RL7520WT-R010-F
Table 9. List of components …continued
See Figure 1 and Figure 2.
Component Description Value Remarks
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 6 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
See Table 9 for a list of components.
Fig 2. The broadband amplifier (1700 to 2300 MHz) demo circuit schematic
+50Vdc
1
3
2
1
-
+
Monitor Gate current
Vgate
RF In
RF Out
L
L
CC
CC
R
R
C
L
C
L
C
R
C
MLIN MLIN MLIN
MLOC
SBCLIN
SBCLIN
SBCLIN
SBCLIN
MSABND_MDS
MSABND _MDS
MSABND_MDS
MSABND_MDS
VIA2
MLIN
R
C
MLIN
C
MLIN MLIN
MLOC
R
L
L
L
SBCLIN
SBCLIN
MSABND_MDS
MSABND_MDS
C
CCCCC
MLINMLIN MLIN MLIN MLIN MLIN
CCC
L
R
CCCCC
L
MLIN
L
VIA2
C
SBCLIN
SBCLIN
MSABND_MDS
MSABND_MDS
C
MLINMLINMLINMLIN
C
MLINMLIN
L2
L3
C30C28
C32 C31 R2
R1
C27
L4
C26
L1
C29
R9
C34
TL23 TL22 TL21
TL20
CLin10
CLin9
CLin8
CLin7
Bend8
Bend7
Bend6
Bend5
V2
TL19
R3
C24
TL18
C33
TL17 TL16
TL15
R8
L6
L8
L10
CLin6
CLin5
Bend4
Bend3
C15
C11 C13C7 C9C5
TL14TL13 TL12 TL11 TL10 TL9
C1 C2 C3
L9
R7
C14C12C8C6C4
L7
TL7
L5
V1
C16
CLin4
CLin3
Bend2
Bend1
C17
TL6TL5TL 4TL 3
C18
TL2TL1
R=
L=18 nH
R=
L=Bead
C=5.6 pFC=5.6 pF
C=1 uF C=100 nF R=2.2 Ohm
R=1 kOhm
C=5.6 pF
R=
L=Bead
C=5.6 pF
R=
L=18 nH
C=5.6 pF
R=100 Ohm
C=1.5 pF
L=75 mil
W=100 m il
Subst="MSub1"
L=194 mil
W=600 m il
Subst="MSub1"
L=263 mil
W=600 m il
Subst="MSub1"
L=0 mil
W=140 m il
Subst="MSub1"
L=325 mil
S=30 mil
W=130 m il
Subst="SSub1"
L=410 mil
S=30 mil
W=130 m il
Subst="SSub1"
L=410 mil
S=30 mil
W=130 m il
Subst="SSub1"
L=325 mil
S=30 mil
W=130 m il
Subst="SSub1"
M=0.5
Angle=45
W= 130 mil
Subst="MSub1"
M=0.5
Angle=45
W=130 m il
Subst="MSub1"
M=0.5
Angle=45
W= 130 mil
Subst="MSub1"
M=0.5
Angle=45
W= 140 mil
Subst="MSub1"
W=15 mil
Rho=1.0
T=0.15 mil
H=30 mil
D=15.0 mil
L=628 mil
W=85 mil
Subst="MSub1"
R=100 Ohm
C=1.5 pF
L=75 mil
W=100 m il
Subst="MSub1"
C=1.5 pF
L=194 mil
W=600 m il
Subst="MSub1"
L=263 mil
W=600 m il
Subst="MSub1"
L=0 mil
W= 140 mil
Subst="MSub1"
R=5.1 Ohm
R=
L=12 nH
R=
L=12 nH
R=
L=Bead
L=325 mil
S=30 mil
W=130 m il
Subst="SSub1"
L=410 mil
S=30 mil
W=130 m il
Subst="SSub1"
M=0.5
Angle=45
W=140 m il
Subst="MSub1"
M=0.5
Angle=45
W=130 m il
Subst="MSub1"
C=5.6 pF
C=240 pF C=1.0 pFC=100 nF C=1000 pFC=2.2 uF
L=83 mil
W=450 m il
Subst="MSub1"
L=477 mil
W=450 mil
Subst="MSub1"
L=162 mil
W=350 m il
Subst="MSub1"
L=69 mil
W=110 mil
Subst="MSub1"
L=72 mil
W=351 m il
Subst="MSub1"
L=90 mil
W=351 m il
Subst="MSub1"
C=150 uF C=10 uF C=10 uF
R=
L=Bead
R=5.1 Ohm
C=1.0 pFC=240 pFC=1000 pFC=100 nFC=2.2 uF
R=
L=12 nH
L=628 mil
W=85 m il
Subst="MSub1"
R=
L=12 nH
W=15 m il
Rho=1.0
T=0.15 mil
H=30 mil
D=15.0 mil
C=5.6 pF
L=410 mil
S=30 mil
W=130 mil
Subst="SSub1"
L=325 mil
S=30 mil
W=130 m il
Subst="SSub1"
M=0.5
Angle=45
W=130 m il
Subst="MSub1"
M=0.5
Angle=45
W=130 m il
Subst="MSub1"
C=1.0 pF
L=90 mil
W=351 m il
Subst="MSub1"
L=72 mil
W=351 m il
Subst="MSub1"
L=69 mil
W=110 mil
Subst="MSub1"
L=162 mil
W=350 m il
Subst="MSub1"
C=1.5 pF
L=83 mil
W= 450 mil
Subst="MSub1"
L=477 mil
W=450 m il
Subst="MSub1"
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 7 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
7.2 Application test results
[1] Pulsed RF: tp = 100 s; =10%.
[1] 2-Tone CW; f=1MHz.
Table 10. CW and pulsed RF application information
Typical RF performance at Tcase = 25
C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal f PLGpD
(MHz) (W) (dB) (%)
1-Tone CW 1700 200 11 47
2000 200 10 52
2300 200 9 58
1-Tone pulsed [1] 1700 200 14 46
2000 200 14 48
2300 200 13 51
Table 11. 2-Tone CW application information
Typical RF performance at Tcase = 25
C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo
board.
Test signal f PL(PEP) IMD3
(MHz) (W) (dBc)
2-Tone CW [1] 1700 120 40
2000 120 45
2300 120 43
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 8 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
7.3 Graphical data
The following figures are measured in a broadband amplifier demo board from 1700 MHz
to 2300 MHz.
7.3.1 1-Tone CW RF performance
VDS = 50 V; IDq = 300 mA; PL= 200 W. VDS = 50 V; IDq = 300 mA.
(1) f = 1700 MHz
(2) f = 2000 MHz
(3) f = 2300 MHz
Fig 3. Power gain and drain efficiency as function of
frequency; typical values
Fig 4. Power gain and drain efficiency as function of
output power; typical values
amp00084
1600 1700 1800 1900 2000 2100 2200 2300 2400
010
320
630
940
12 50
15 60
18 70
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
amp00085
42 44 46 48 50 52 54 56
00
310
620
930
12 40
15 50
18 60
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
Gp
Gp
ηD
ηD
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 9 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
7.3.2 1-Tone pulsed RF performance
VDS =50V; I
Dq = 300 mA; tp= 100 s; =10%;
PL= 200 W.
VDS = 50 V; IDq = 300 mA; tp = 100 s; =10%.
(1) f = 1700 MHz
(2) f = 2000 MHz
(3) f = 2300 MHz
Fig 5. Power gain and drain efficiency as function of
frequency; typical values
Fig 6. Power gain and drain efficiency as function of
output power; typical values
amp00086
1650 1750 1850 1950 2050 2150 2250
010
320
630
940
12 50
15 60
18 70
f (MHz)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
Gp
Gp
ηD
ηD
amp00087
42 44 46 48 50 52 54 56
60
810
10 20
12 30
14 40
16 50
18 60
PL (dBm)
Gp
Gp
(dB)(dB)(dB)
ηD
ηD
(%)(%)(%)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
Gp
Gp
ηD
ηD
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 10 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
7.3.3 2-Tone CW performance
7.3.4 Bias module
The bias module information for the GaN HEMT amplifier is described in application note
AN11130.
f=1MHz; V
DS = 50 V; IDq =600mA.
(1) f = 1700 MHz
(2) f = 2000 MHz
(3) f = 2300 MHz
VDS = 50 V; IDq = 600 mA; PL(PEP) = 120 W.
(1) f = 1700 MHz
(2) f = 2000 MHz
(3) f = 2300 MHz
Fig 7. Third-order intermodulation distortion as a
function of peak envelope power load power;
typical values
Fig 8. Third-order intermodulation distortion as a
function of frequency; typical values
amp00088
1 10 102103
-60
-48
-36
-24
-12
0
PL(PEP) (W)
IMD3
IMD3IMD3
(dBc)
(dBc)(dBc)
(1)(1)(1)
(2)(2)(2)
(3)(3)(3)
amp00089
1600 1700 1800 1900 2000 2100 2200 2300 2400
-60
-50
-40
-30
-20
-10
0
f (MHz)
IMD3
IMD3IMD3
(dBc)
(dBc)(dBc)
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 11 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
8. Test information
8.1 Ruggedness in class-AB operation
The CLF1G0035-200P and CLF1G0035S-200P are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS =50V; P
L= 175 W (CW), f = 2140 MHz in a broadband application
circuit.
8.2 Load pull impedance information
The measured half section load pull impedances are shown below. Impedance reference
plane defined at device leads at each half section. Measurements performed with
Ampleon test fixtures. Test temperature set at 25 C with a pulsed CW signal; tp=100s;
= 10 %; RF performance at VDS =50V; I
Dq =330 mA.
[1] measured at gate1 and gate2
[2] measured at drain1 and drain2
ZS is the measured source pull impedance presented to the device. ZL is the measured
load pull impedance presented to the device.
Table 12. Typical impedance
Measured load-pull data half device. Typical values unless otherwise specified. IDq = 330 mA;
VDS =50V. Z
S and ZL defined in Figure 9.
f ZS [1] ZL (maximum PL(M)) [2] ZL (maximum D) [2]
(MHz) () () ()
500 6 + 6.5j 5.8 + 1.9j 7.6 + 5j
1000 1.7 + 2j 6 + 0.7j 6.5 + 5.2j
2000 1.2 2.8j 4.5 0.5j 3.8 + 1.6j
2600 1 4.2j 4 1.2j 3 + 0j
3000 1.7 5.2j 3.8 2.5j 3.1 1.3j
3500 2.7 8.9j 4.2 4.8j 3.3 3.7j
Fig 9. Definition of transistor impedance
aaa-007981
gate 1
Z
S
ZL
gate 2 drain 2
drain 1
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 12 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
8.3 Packaged S-parameter data
Table 13. S-parameter data half device
Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50
f
(MHz)
S11 S21 S12 S22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
100 0.89132 156.66 34.068 94.493 0.012475 7.7032 0.52196 147.24
200 0.89073 168.26 17.043 82.662 0.012315 0.83012 0.53166 156.66
300 0.89427 172.3 11.153 74.641 0.011818 5.3714 0.55825 158.1
400 0.89924 174.48 8.1416 67.823 0.011142 8.4181 0.59137 158.32
500 0.90493 175.96 6.3028 61.71 0.010348 10.333 0.62678 158.56
600 0.91086 177.14 5.0617 56.145 0.009484 11.104 0.66181 159.08
700 0.91671 178.17 4.1699 51.054 0.008599 10.584 0.69485 159.87
800 0.92224 179.13 3.5016 46.389 0.007737 8.5461 0.72507 160.86
900 0.92735 179.94 2.9855 42.108 0.006948 4.7126 0.75217 161.98
1000 0.93196 179.04 2.578 38.172 0.006285 1.1721 0.77617 163.17
1100 0.93606 178.16 2.2506 34.546 0.005806 9.1609 0.79724 164.39
1200 0.93966 177.28 1.9837 31.195 0.005568 18.833 0.81567 165.61
1300 0.94281 176.4 1.7635 28.089 0.005606 29.182 0.83174 166.82
1400 0.94552 175.53 1.5801 25.2 0.005918 38.964 0.84575 168
1500 0.94785 174.66 1.4259 22.504 0.006469 47.302 0.85796 169.15
1600 0.94982 173.78 1.2952 19.978 0.00721 53.919 0.86862 170.26
1700 0.95148 172.9 1.1837 17.603 0.008097 58.951 0.87793 171.34
1800 0.95285 172.02 1.088 15.361 0.009097 62.687 0.88608 172.38
1900 0.95397 171.13 1.0053 13.239 0.010189 65.418 0.89322 173.38
2000 0.95484 170.23 0.93366 11.223 0.011359 67.384 0.89949 174.36
2100 0.9555 169.32 0.87121 9.2996 0.012601 68.77 0.905 175.31
2200 0.95595 168.39 0.81661 7.4599 0.013912 69.711 0.90983 176.23
2300 0.95622 167.44 0.76871 5.6942 0.015292 70.306 0.91408 177.14
2400 0.9563 166.48 0.7266 3.9939 0.016745 70.629 0.91781 178.02
2500 0.9562 165.49 0.68949 2.3514 0.018273 70.735 0.92108 178.88
2600 0.95593 164.48 0.65676 0.7596 0.019885 70.661 0.92394 179.72
2700 0.95549 163.44 0.62788 0.788 0.021586 70.439 0.92643 179.44
2800 0.95487 162.36 0.60239 2.2976 0.023385 70.091 0.92858 178.62
2900 0.95408 161.25 0.57994 3.775 0.025294 69.632 0.93042 177.81
3000 0.9531 160.1 0.56021 5.226 0.027321 69.075 0.93198 177
3100 0.95192 158.9 0.54294 6.656 0.029482 68.427 0.93328 176.2
3200 0.95053 157.65 0.52791 8.0708 0.03179 67.696 0.93433 175.4
3300 0.94892 156.35 0.51495 9.4758 0.034261 66.885 0.93514 174.6
3400 0.94706 154.98 0.5039 10.877 0.036915 65.995 0.93573 173.81
3500 0.94493 153.54 0.49464 12.28 0.039772 65.028 0.93611 173.01
3600 0.9425 152.02 0.48708 13.692 0.042855 63.98 0.93627 172.2
3700 0.93974 150.42 0.48113 15.12 0.046193 62.851 0.93622 171.4
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 13 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
3800 0.93661 148.72 0.47676 16.57 0.049816 61.637 0.93596 170.58
3900 0.93304 146.91 0.47391 18.052 0.053758 60.331 0.93549 169.76
4000 0.92899 144.97 0.47258 19.574 0.05806 58.928 0.9348 168.93
4100 0.92439 142.9 0.47276 21.147 0.062766 57.42 0.93389 168.09
4200 0.91915 140.66 0.47446 22.781 0.067929 55.796 0.93276 167.24
4300 0.91317 138.25 0.47772 24.491 0.073607 54.046 0.93138 166.37
4400 0.90633 135.63 0.48257 26.289 0.079867 52.157 0.92976 165.49
4500 0.89849 132.78 0.48907 28.193 0.086783 50.112 0.9279 164.6
4600 0.88949 129.66 0.49729 30.221 0.094441 47.895 0.92577 163.69
4700 0.87914 126.23 0.50729 32.395 0.10293 45.484 0.92339 162.77
4800 0.8672 122.45 0.51914 34.739 0.11237 42.857 0.92076 161.83
4900 0.85343 118.25 0.53291 37.279 0.12284 39.988 0.91791 160.88
5000 0.83755 113.57 0.54862 40.045 0.13448 36.847 0.91488 159.92
5100 0.81926 108.32 0.56627 43.069 0.14738 33.402 0.91174 158.95
5200 0.79827 102.42 0.58578 46.386 0.16163 29.62 0.9086 157.98
5300 0.77437 95.758 0.60694 50.029 0.1773 25.468 0.90565 156.99
5400 0.74749 88.197 0.62942 54.032 0.19438 20.912 0.90312 156
5500 0.7178 79.599 0.65267 58.42 0.2128 15.928 0.90132 155
5600 0.68594 69.815 0.67591 63.21 0.23234 10.5 0.90063 153.96
5700 0.65314 58.706 0.69815 68.399 0.25267 4.6305 0.90147 152.86
5800 0.62143 46.181 0.71818 73.964 0.2733 1.6555 0.90421 151.66
5900 0.59357 32.261 0.73479 79.853 0.29362 8.3064 0.90909 150.31
6000 0.57266 17.159 0.7469 85.99 0.31299 15.244 0.9161 148.75
Table 13. S-parameter data half device …continued
Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50
f
(MHz)
S11 S21 S12 S22
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
Magnitude
(ratio)
Angle
(degree)
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 14 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
9. Package outline
Fig 10. Package outline SOT1228A
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1228A
0.125
0.005
3
0.380
0.015
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 15 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
Fig 11. Package outline SOT1228B
Earless flanged LDMOST ceramic package; 4 leads SOT1228B
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 16 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
10. Handling information
10.1 ESD Sensitivity
[1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after
exposure to an ESD pulse of 1000 V.
11. Abbreviations
12. Revision history
Table 14. ESD sensitivity
ESD model Class
Human Body Model (HBM); According JEDEC standard 22-A114E 1B [1]
Table 15. Abbreviations
Acronym Description
CW Continuous Wave
EMC ElectroMagnetic Compatibility
ESD ElectroStatic Discharge
GaN Gallium Nitride
HEMT High Electron Mobility Transistor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
WiMAX Worldwide Interoperability for Microwave Access
Table 16. Revision history
Document ID Release date Data sheet status Change notice Supersedes
CLF1G0035-200P_1G0035S-200P v.1 20160422 Product data sheet - -
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 17 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
CLF1G0035-200P_1G0035S-200P All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved.
Product data sheet Rev. 1 — 22 April 2016 18 of 19
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
14. Contact information
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
CLF1G0035(S)-200P
Broadband RF power GaN HEMT
© Ampleon Netherlands B.V. 2016. All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 22 April 2016
Document identifier: CLF1G0035-200P_1G0035S-200P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 4
7.1 Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.2 Application test results . . . . . . . . . . . . . . . . . . . 7
7.3 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8
7.3.1 1-Tone CW RF performance. . . . . . . . . . . . . . . 8
7.3.2 1-Tone pulsed RF performance . . . . . . . . . . . . 9
7.3.3 2-Tone CW performance . . . . . . . . . . . . . . . . 10
7.3.4 Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
8.1 Ruggedness in class-AB operation . . . . . . . . 11
8.2 Load pull impedance information . . . . . . . . . . 11
8.3 Packaged S-parameter data. . . . . . . . . . . . . . 12
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14
10 Handling information. . . . . . . . . . . . . . . . . . . . 16
10.1 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 16
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
14 Contact information. . . . . . . . . . . . . . . . . . . . . 18
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19