CLF1G0035-200P; CLF1G0035S-200P Broadband RF power GaN HEMT Rev. 1 -- 22 April 2016 Product data sheet 1. Product profile 1.1 General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Table 1. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW 1-Tone pulsed [1] [1] f PL Gp D (MHz) (W) (dB) (%) 1700 200 11 47 2000 200 10 52 2300 200 9 58 1700 200 14 46 2000 200 14 48 2300 200 13 51 Pulsed RF; tp = 100 s; = 10 %. Table 2. 2-Tone CW application information Typical 2-Tone performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 2-Tone CW [1] [1] f PL(PEP) IMD3 (MHz) (W) (dBc) 1700 120 40 2000 120 45 2300 120 43 2-Tone CW; f = 100 kHz. 1.2 Features and benefits Frequency of operation is from DC to 3.5 GHz 200 W general purpose broadband RF Power GaN HEMT Excellent ruggedness (VSWR = 10 : 1) High voltage operation (50 V) Thermally enhanced package CLF1G0035(S)-200P Broadband RF power GaN HEMT 1.3 Applications Commercial wireless infrastructure (cellular, WiMAX) Radar Broadband general purpose amplifier Public mobile radios Industrial, scientific, medical Jammers EMC testing Defense application 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol CLF1G0035-200P (SOT1228A) 1 drain1 2 drain2 3 gate1 4 1 3 5 gate2 5 1 2 3 5 4 2 aaa-005775 [1] source 4 CLF1G0035S-200P (SOT1228B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 1 1 2 3 5 4 2 aaa-005775 [1] 3 4 Connected to flange. 3. Ordering information Table 4. CLF1G0035-200P_1G0035S-200P Product data sheet Ordering information Type number Package Name Description CLF1G0035-200P - flanged ceramic package; 2 mounting holes; 4 leads SOT1228A CLF1G0035S-200P - earless flanged ceramic package; 4 leads All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 Version SOT1228B (c) Ampleon Netherlands B.V. 2016. All rights reserved. 2 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS VGS drain-source voltage - 150 V gate-source voltage 8 +3 V IGF forward gate current - 72 mA Tstg storage temperature 65 +150 C Tj junction temperature - 250 C external RG = 5 measured via IR scan 5. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-c) thermal resistance from junction to case Tj = 200 C [1] [1] Typ Unit 0.52 K/W Tj is measured via IR scan with case temperature of 85 C and power dissipation of 220 W. 6. Characteristics Table 7. DC Characteristics Tcase = 25 C per section; unless otherwise specified. Symbol Parameter Conditions V(BR)DSS drain-source breakdown voltage VGS = 7 V; IDS = 24 mA VGS(th) gate-source threshold voltage IDSX drain cut-off current gfs forward transconductance Min Typ Max Unit 150 - - V 2.4 2 1.3 V VDS = 10 V; VGS = 3 V - 17.5 - A VDS = 10 V; VGS = 0 V - 4 - S VDS = 0.1 V; IDS = 24 mA Table 8. RF Characteristics Test signal: pulsed RF; f = 3000 MHz; tp = 100 s; = 10 %; RF performance at VDS = 50 V; IDq = 660 mA; Tcase = 25 C; unless otherwise specified in a class-AB production circuit. CLF1G0035-200P_1G0035S-200P Product data sheet Symbol Parameter Conditions Min Typ Max Unit D drain efficiency PL = 200 W 39 44 - % Gp power gain PL = 200 W 9 11 - dB RLin input return loss PL = 200 W - 10 - dB tr rise time PL = 200 W - 9 - ns tf fall time PL = 200 W - 9 - ns All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 3 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 7. Application information 7.1 Demo circuit 108.3 mm R3 C24 67.4 mm L1 C29 C26 R10 Cutmetal L4 R1 C27 R2 C32 L3 C31 C28 R11 J1 C30 L2 R5 C22 C20 Q1 C17 C19 C33 C18 L6 L8 C15 R8 R4 C25 C23 C2 C21 S C3 R6 GND D G Vs T_c GND T_b GND VF VG I GND Q2 TTL L5 L7 C16 R7 C8 C6 L9 C14 C4 C12 C11 C9 C5 C13 L10 C7 Q3 J5 C1 Pot R9 J3 J4 J2 amp00082 Fig 1. The broadband amplifier (1700 to 2300 MHZ) demo circuit outline Table 9. List of components See Figure 1 and Figure 2. Component Description C1 electrolytic capacitor C2, C3 multilayer ceramic chip capacitor 10 F, 100 V TDK C5750X7S2A106M C4, C5 multilayer ceramic chip capacitor 2.2 F, 100 V Murata GRM32ER72A225KA35L C6, C7 multilayer ceramic chip capacitor 0.1 F, 250 V Murata GRM32DR72E104KW01L C8, C9 multilayer ceramic chip capacitor 1000 pF PassivePlus 1111N C11, C12 multilayer ceramic chip capacitor 240 pF Passive Plus 0805N C13, C14 multilayer ceramic chip capacitor 1.8 pF Passive Plus 0805N C15, C16, C26, C27, C28, C29, C30 multilayer ceramic chip capacitor 5.6 pF Passive Plus 0805N C17 multilayer ceramic chip capacitor 0.9 pF ATC 100B C18 multilayer ceramic chip capacitor 0.2 pF Passive Plus 0805N C19 multilayer ceramic chip capacitor 1.6 pF Passive Plus 0805N CLF1G0035-200P_1G0035S-200P Product data sheet Value Remarks Panasonic EEE-TK1J471AM All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 4 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT Table 9. List of components ...continued See Figure 1 and Figure 2. Component Description Value Remarks C20, C21, C24, C25 multilayer ceramic chip capacitor 0.2 pF Passive Plus 0805N C22, C23 multilayer ceramic chip capacitor 0.5 pF Passive Plus 0805N C31 multilayer ceramic chip capacitor 100 nF, 50 V Multicomp U0805W104K1HRN-P4 C32 multilayer ceramic chip capacitor 1 F, 100 V Murata GRM31CR72A105KA01L C33 multilayer ceramic chip capacitor 0.6 pF Passive Plus 0805N J1, J2 header 2 pin 0.1" J3 header 1 pin 0.1" J4, J5 spade connector - L1, L2 inductor 18 nH, 1.4 A L3, L4 ferrite chip bead 600 Laird MI0805K601R-10 L5, L6, L7, L8 inductor 12 nH, 4.4 A Coil-Craft 0908SQ-8N1 L L9, L10 ferrite chip bead - Fair-Rite 2743019447 Q1 transistor - CLF1G0035-200P Coil-Craft 0805HQ-18NX L Q2 transistor - NXP BC857B Q3 transistor - NXP PSMN8R2-80YS R1 resistor 1 SMD 0805 R2 resistor 2.2 k SMD 0805 R3, R4 resistor 100 SMD 2010 R5, R6 resistor 50 SMD 2010 R7, R8, R10, R11 resistor 5.1 SMD 0805 R9 resistor 0.010 Susumu RL7520WT-R010-F CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 5 of 19 xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx CLF1G0035-200P_1G0035S-200P Product data sheet R R7 R=5.1 Ohm C C4 C=2.2 uF C C26 C=5.6 pF C C6 C=100 nF C C8 C=1000 pF C C12 C=240 pF L L9 L=Bead R= C C29 C=5.6 pF C C16 C=5.6 pF L L7 L=12 nH R= C C14 C=1.0 pF L L5 L=12 nH R= RF Out L L1 L=18 nH R= Rev. 1 -- 22 April 2016 MLOC SBCLIN TL20 CLin8 Subst="MSub1"Subst="SSub1" W=140 mil W=130 mil L=0 mil S=30 mil L=410 mil MSABND_MDS Bend5 Subst="MSub1" W =140 mil Angle=45 M=0.5 MSABND_MDS Bend6 Subst="MSub1" W =130 mil Angle=45 M=0.5 C C27 C=5.6 pF - R R3 R=100 Ohm SBCLIN CLin7 Subst="SSub1" W =130 mil S=30 mil L=325 mil MLIN TL18 Subst="MSub1" W=100 mil L=75 mil MLIN TL17 Subst="MSub1" W=600 mil L=194 mil + Vgate C C32 C=1 uF C C31 C=100 nF VIA2 V1 D=15.0 mil H=30 mil T=0.15 mil Rho=1.0 W=15 mil MLIN TL16 Subst="MSub1" W=600 mil L=263 mil C C33 C=1.5 pF 3 1 MLIN TL1 Subst="MSub1" W=450 mil L=477 mil MLIN TL2 Subst="MSub1" W =450 mil C L=83 mil C18 C=1.5 pF MLIN TL3 Subst="MSub1" W=350 mil L=162 mil MLIN TL4 Subst="MSub1" W=110 mil C L=69 mil C17 MLIN TL5 Subst="MSub1" W=351 mil L=72 mil MLIN TL6 Subst="MSub1" W=351 mil L=90 mil +50Vdc C C1 C=150 uF MSABND_MDS Bend7 Subst="MSub1" W=130 mil Angle=45 M=0.5 RF In MLIN TL19 Subst="MSub1" W=85 mil L=628 mil L L3 L=Bead R= SBCLIN CLin9 Subst="SSub1" W=130 mil S=30 mil L=410 mil MLIN TL22 Subst="MSub1" W=600 mil L=194 mil C C34 C=1.5 pF MLIN TL21 Subst="MSub1" W=600 mil L=263 mil 2 MLIN TL13 Subst="MSub1" W =450 mil L=477 mil MLIN TL14 Subst="MSub1" W=450 mil L=83 mil MLIN TL12 Subst="MSub1" W=350 mil L=162 mil MLIN TL11 Subst="MSub1" W=110 mil L=69 mil MLIN TL10 Subst="MSub1" W=351 mil L=72 mil MLIN TL9 Subst="MSub1" W=351 mil L=90 mil MSABND_MDS Bend3 Subst="MSub1" W=130 mil Angle=45 M=0.5 MSABND_MDS Bend4 Subst="MSub1" W=140 mil Angle=45 M=0.5 MSABND_MDS Bend8 Subst="MSub1" W =130 mil Angle=45 M=0.5 L L10 L=Bead R= 6 of 19 (c) Ampleon Netherlands B.V. 2016. All rights reserved. See Table 9 for a list of components. The broadband amplifier (1700 to 2300 MHz) demo circuit schematic C C3 C=10 uF SBCLIN CLin6 Subst="SSub1" W=130 mil S=30 mil L=325 mil R R9 R=100 Ohm C C30 C=5.6 pF C C2 C=10 uF R R8 R=5.1 Ohm C C5 C=2.2 uF C C7 C=100 nF C C9 C=1000 pF C C11 C=240 pF C C13 C=1.0 pF SBCLIN CLin5 Subst="SSub1" W=130 mil S=30 mil L=410 mil L L6 L=12 nH R= L L8 L=12 nH R= MLOC TL15 Subst="MSub1" W =140 mil L=0 mil C C15 C=5.6 pF Broadband RF power GaN HEMT L C L2 C28 L=18 nH C=5.6 pF R= VIA2 V2 D=15.0 mil H=30 mil T=0.15 mil Rho=1.0 W=15 mil 1 MLIN TL23 Subst="MSub1" W=100 mil L=75 mil MLIN TL7 Subst="MSub1" W=85 mil L=628 mil C=1.0 pF R R2 R=2.2 Ohm SBCLIN CLin10 Subst="SSub1" W=130 mil S=30 mil L=325 mil Fig 2. SBCLIN CLin4 Subst="SSub1" W =130 mil S=30 mil L=410 mil MSABND_MDS Bend2 Subst="MSub1" W=130 mil Angle=45 M=0.5 SBCLIN CLin3 Subst="SSub1" W=130 mil S=30 mil L=325 mil C C24 C=1.5 pF R R1 R=1 kOhm Monitor Gate current MSABND_MDS Bend1 Subst="MSub1" W=130 mil Angle=45 M=0.5 CLF1G0035(S)-200P All information provided in this document is subject to legal disclaimers. L L4 L=Bead R= CLF1G0035(S)-200P Broadband RF power GaN HEMT 7.2 Application test results Table 10. CW and pulsed RF application information Typical RF performance at Tcase = 25 C; IDq = 300 mA; VDS = 50 V in a class-AB broadband demo board. Test signal 1-Tone CW 1-Tone pulsed [1] [1] f PL Gp D (MHz) (W) (dB) (%) 1700 200 11 47 2000 200 10 52 2300 200 9 58 1700 200 14 46 2000 200 14 48 2300 200 13 51 Pulsed RF: tp = 100 s; = 10 %. Table 11. 2-Tone CW application information Typical RF performance at Tcase = 25 C; IDq = 600 mA; VDS = 50 V in a class-AB broadband demo board. Test signal f 2-Tone CW [1] [1] CLF1G0035-200P_1G0035S-200P Product data sheet PL(PEP) IMD3 (MHz) (W) (dBc) 1700 120 40 2000 120 45 2300 120 43 2-Tone CW; f = 1 MHz. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 7 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 7.3 Graphical data The following figures are measured in a broadband amplifier demo board from 1700 MHz to 2300 MHz. 7.3.1 1-Tone CW RF performance amp00084 18 70 Gp (dB) 15 D (%) 15 50 12 9 40 9 6 30 6 12 60 Gp (dB) 60 Gp amp00085 18 D (%) 50 Gp 40 D (1) (1) (2) (2) (3) (3) 30 20 D 3 20 3 0 10 1600 1700 1800 1900 2000 2100 2200 2300 2400 f (MHz) 0 10 0 42 VDS = 50 V; IDq = 300 mA; PL = 200 W. 44 46 48 50 52 54 PL (dBm) 56 VDS = 50 V; IDq = 300 mA. (1) f = 1700 MHz (2) f = 2000 MHz (3) f = 2300 MHz Fig 3. Power gain and drain efficiency as function of frequency; typical values CLF1G0035-200P_1G0035S-200P Product data sheet Fig 4. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 8 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 7.3.2 1-Tone pulsed RF performance amp00086 18 70 Gp (dB) 15 Gp 60 Gp (dB) D (%) 60 16 50 14 9 40 12 6 30 10 3 20 8 10 2250 6 12 amp00087 18 D (%) 50 Gp 40 D 0 1650 1750 1850 1950 2050 2150 f (MHz) VDS = 50 V; IDq = 300 mA; tp = 100 s; = 10 %; PL = 200 W. (1) (1) (2) (2) (3) (3) 30 20 D 10 0 42 44 46 48 50 52 54 PL (dBm) 56 VDS = 50 V; IDq = 300 mA; tp = 100 s; = 10 %. (1) f = 1700 MHz (2) f = 2000 MHz (3) f = 2300 MHz Fig 5. Power gain and drain efficiency as function of frequency; typical values CLF1G0035-200P_1G0035S-200P Product data sheet Fig 6. Power gain and drain efficiency as function of output power; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 9 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 7.3.3 2-Tone CW performance amp00088 0 amp00089 0 IMD3 (dBc) -10 IMD3 (dBc) -12 -20 -24 (1) (2) (3) -30 -36 -40 -48 -50 -60 1 10 102 PL(PEP) (W) -60 1600 1700 1800 1900 2000 2100 2200 2300 2400 f (MHz) 103 f = 1 MHz; VDS = 50 V; IDq = 600 mA. VDS = 50 V; IDq = 600 mA; PL(PEP) = 120 W. (1) f = 1700 MHz (1) f = 1700 MHz (2) f = 2000 MHz (2) f = 2000 MHz (3) f = 2300 MHz (3) f = 2300 MHz Fig 7. Third-order intermodulation distortion as a function of peak envelope power load power; typical values Fig 8. Third-order intermodulation distortion as a function of frequency; typical values 7.3.4 Bias module The bias module information for the GaN HEMT amplifier is described in application note AN11130. CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 10 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 8. Test information 8.1 Ruggedness in class-AB operation The CLF1G0035-200P and CLF1G0035S-200P are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 50 V; PL = 175 W (CW), f = 2140 MHz in a broadband application circuit. 8.2 Load pull impedance information The measured half section load pull impedances are shown below. Impedance reference plane defined at device leads at each half section. Measurements performed with Ampleon test fixtures. Test temperature set at 25 C with a pulsed CW signal; tp = 100 s; = 10 %; RF performance at VDS = 50 V; IDq = 330 mA. Table 12. Typical impedance Measured load-pull data half device. Typical values unless otherwise specified. IDq = 330 mA; VDS = 50 V. ZS and ZL defined in Figure 9. f ZS [1] ZL (maximum PL(M)) [2] ZL (maximum D) [2] (MHz) () () () 500 6 + 6.5j 5.8 + 1.9j 7.6 + 5j 1000 1.7 + 2j 6 + 0.7j 6.5 + 5.2j 2000 1.2 2.8j 4.5 0.5j 3.8 + 1.6j 2600 1 4.2j 4 1.2j 3 + 0j 3000 1.7 5.2j 3.8 2.5j 3.1 1.3j 3500 2.7 8.9j 4.2 4.8j 3.3 3.7j [1] measured at gate1 and gate2 [2] measured at drain1 and drain2 drain 1 gate 1 ZL ZS gate 2 drain 2 aaa-007981 Fig 9. Definition of transistor impedance ZS is the measured source pull impedance presented to the device. ZL is the measured load pull impedance presented to the device. CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 11 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 8.3 Packaged S-parameter data Table 13. S-parameter data half device Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50 f (MHz) S11 S21 S12 S22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 100 0.89132 156.66 34.068 94.493 0.012475 7.7032 0.52196 147.24 200 0.89073 168.26 17.043 82.662 0.012315 0.83012 0.53166 156.66 300 0.89427 172.3 11.153 74.641 0.011818 5.3714 0.55825 158.1 400 0.89924 174.48 8.1416 67.823 0.011142 8.4181 0.59137 158.32 500 0.90493 175.96 6.3028 61.71 0.010348 10.333 0.62678 158.56 600 0.91086 177.14 5.0617 56.145 0.009484 11.104 0.66181 159.08 700 0.91671 178.17 4.1699 51.054 0.008599 10.584 0.69485 159.87 800 0.92224 179.13 3.5016 46.389 0.007737 8.5461 0.72507 160.86 900 0.92735 179.94 2.9855 42.108 0.006948 4.7126 0.75217 161.98 1000 0.93196 179.04 2.578 38.172 0.006285 1.1721 0.77617 163.17 1100 0.93606 178.16 2.2506 34.546 0.005806 9.1609 0.79724 164.39 1200 0.93966 177.28 1.9837 31.195 0.005568 18.833 0.81567 165.61 1300 0.94281 176.4 1.7635 28.089 0.005606 29.182 0.83174 166.82 1400 0.94552 175.53 1.5801 25.2 0.005918 38.964 0.84575 168 1500 0.94785 174.66 1.4259 22.504 0.006469 47.302 0.85796 169.15 1600 0.94982 173.78 1.2952 19.978 0.00721 53.919 0.86862 170.26 1700 0.95148 172.9 1.1837 17.603 0.008097 58.951 0.87793 171.34 1800 0.95285 172.02 1.088 15.361 0.009097 62.687 0.88608 172.38 1900 0.95397 171.13 1.0053 13.239 0.010189 65.418 0.89322 173.38 2000 0.95484 170.23 0.93366 11.223 0.011359 67.384 0.89949 174.36 2100 0.9555 169.32 0.87121 9.2996 0.012601 68.77 0.905 175.31 2200 0.95595 168.39 0.81661 7.4599 0.013912 69.711 0.90983 176.23 2300 0.95622 167.44 0.76871 5.6942 0.015292 70.306 0.91408 177.14 2400 0.9563 166.48 0.7266 3.9939 0.016745 70.629 0.91781 178.02 2500 0.9562 165.49 0.68949 2.3514 0.018273 70.735 0.92108 178.88 2600 0.95593 164.48 0.65676 0.7596 0.019885 70.661 0.92394 179.72 2700 0.95549 163.44 0.62788 0.788 0.021586 70.439 0.92643 179.44 2800 0.95487 162.36 0.60239 2.2976 0.023385 70.091 0.92858 178.62 2900 0.95408 161.25 0.57994 3.775 0.025294 69.632 0.93042 177.81 3000 0.9531 160.1 0.56021 5.226 0.027321 69.075 0.93198 177 3100 0.95192 158.9 0.54294 6.656 0.029482 68.427 0.93328 176.2 3200 0.95053 157.65 0.52791 8.0708 0.03179 67.696 0.93433 175.4 3300 0.94892 156.35 0.51495 9.4758 0.034261 66.885 0.93514 174.6 3400 0.94706 154.98 0.5039 10.877 0.036915 65.995 0.93573 173.81 3500 0.94493 153.54 0.49464 12.28 0.039772 65.028 0.93611 173.01 3600 0.9425 152.02 0.48708 13.692 0.042855 63.98 0.93627 172.2 3700 0.93974 150.42 0.48113 15.12 0.046193 62.851 0.93622 171.4 CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 12 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT Table 13. S-parameter data half device ...continued Small signal; VDS = 50 V; IDq = 330 mA; ZS = ZL = 50 f (MHz) S11 S21 S12 S22 Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) Magnitude (ratio) Angle (degree) 3800 0.93661 148.72 0.47676 16.57 0.049816 61.637 0.93596 170.58 3900 0.93304 146.91 0.47391 18.052 0.053758 60.331 0.93549 169.76 4000 0.92899 144.97 0.47258 19.574 0.05806 58.928 0.9348 168.93 4100 0.92439 142.9 0.47276 21.147 0.062766 57.42 0.93389 168.09 4200 0.91915 140.66 0.47446 22.781 0.067929 55.796 0.93276 167.24 4300 0.91317 138.25 0.47772 24.491 0.073607 54.046 0.93138 166.37 4400 0.90633 135.63 0.48257 26.289 0.079867 52.157 0.92976 165.49 4500 0.89849 132.78 0.48907 28.193 0.086783 50.112 0.9279 164.6 4600 0.88949 129.66 0.49729 30.221 0.094441 47.895 0.92577 163.69 4700 0.87914 126.23 0.50729 32.395 0.10293 45.484 0.92339 162.77 4800 0.8672 122.45 0.51914 34.739 0.11237 42.857 0.92076 161.83 4900 0.85343 118.25 0.53291 37.279 0.12284 39.988 0.91791 160.88 5000 0.83755 113.57 0.54862 40.045 0.13448 36.847 0.91488 159.92 5100 0.81926 108.32 0.56627 43.069 0.14738 33.402 0.91174 158.95 5200 0.79827 102.42 0.58578 46.386 0.16163 29.62 0.9086 157.98 5300 0.77437 95.758 0.60694 50.029 0.1773 25.468 0.90565 156.99 5400 0.74749 88.197 0.62942 54.032 0.19438 20.912 0.90312 156 5500 0.7178 79.599 0.65267 58.42 0.2128 15.928 0.90132 155 5600 0.68594 69.815 0.67591 63.21 0.23234 10.5 0.90063 153.96 5700 0.65314 58.706 0.69815 68.399 0.25267 4.6305 0.90147 152.86 5800 0.62143 46.181 0.71818 73.964 0.2733 1.6555 0.90421 151.66 5900 0.59357 32.261 0.73479 79.853 0.29362 8.3064 0.90909 150.31 6000 0.57266 17.159 0.7469 85.99 0.31299 15.244 0.9161 148.75 CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 13 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 9. Package outline Flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT1228A D A F D1 w1 U1 B q C w2 H1 1 B c C 2 w3 H A A B E1 p U2 E 5 A w1 3 A B 4 w1 b w4 e 0 w4 Q 5 A B 0.380 10 mm 0.015 scale Dimensions Unit(1) mm max nom min A b c 5.2 5.59 0.15 D D1 e 16.66 16.69 E E1 F 5.92 5.97 1.65 H H1 18.29 12.19 p Q(2) 3.43 2.21 max 0.205 inches nom min 0.177 5.33 0.08 16.36 16.33 0.220 0.006 0.656 0.657 5.77 5.72 1.40 17.27 11.94 3.18 0.003 1.145 0.235 0.01 0.02 0.005 1.135 0.225 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from body. Outline version References IEC JEDEC JEITA w3 0.25 0.51 0.125 0.900 0.227 0.225 0.055 0.680 0.470 0.125 0.077 w2 28.83 5.72 0.233 0.235 0.065 0.720 0.480 0.135 0.087 0.644 0.643 w1 29.08 5.97 1.96 0.26 0.210 U2 22.86 6.60 4.5 U1 q sot1228a_po European projection Issue date 12-06-11 13-05-16 SOT1228A Fig 10. Package outline SOT1228A CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 14 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT Earless flanged LDMOST ceramic package; 4 leads SOT1228B D A F 5 D1 w1 U1 A B B H1 w2 1 c B 2 w3 A B E1 H U2 E A 3 4 w1 b Q e w4 0 5 A B 10 mm scale Dimensions Unit(1) mm max nom min A b c 5.2 5.59 0.15 D D1 e 16.66 16.69 E E1 F H H1 Q(2) U1 w1 U2 5.92 5.97 1.65 18.29 12.19 2.21 17.40 5.97 5.77 5.72 1.40 17.27 11.94 1.96 17.15 5.72 max 0.205 inches nom min 0.177 5.33 0.08 16.36 16.33 0.220 0.006 0.656 0.657 0.233 0.235 0.065 0.720 0.480 0.087 0.685 0.235 0.227 0.225 0.055 0.680 0.470 0.077 0.675 0.225 0.003 0.644 0.643 Note 1. Millimeter dimensions are derived from the original inch dimensions. 2. Dimension is measured 0.030 inch (0.76 mm) from body. Outline version References IEC JEDEC w4 0.01 0.02 0.005 0.01 0.26 0.210 w3 0.25 0.51 0.125 0.38 6.60 4.5 w2 JEITA sot1228b_po European projection Issue date 13-05-15 13-05-23 SOT1228B Fig 11. Package outline SOT1228B CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 15 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 10. Handling information 10.1 ESD Sensitivity Table 14. ESD sensitivity ESD model Class Human Body Model (HBM); According JEDEC standard 22-A114E 1B [1] [1] Classification 1B is granted to any part that passes after exposure to an ESD pulse of 500 V, but fails after exposure to an ESD pulse of 1000 V. 11. Abbreviations Table 15. Abbreviations Acronym Description CW Continuous Wave EMC ElectroMagnetic Compatibility ESD ElectroStatic Discharge GaN Gallium Nitride HEMT High Electron Mobility Transistor LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WiMAX Worldwide Interoperability for Microwave Access 12. Revision history Table 16. Revision history Document ID Release date Data sheet status Change notice Supersedes CLF1G0035-200P_1G0035S-200P v.1 20160422 Product data sheet - - CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 16 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.ampleon.com. 13.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Ampleon does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Ampleon sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between Ampleon and its customer, unless Ampleon and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the Ampleon product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, Ampleon does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Ampleon takes no responsibility for the content in this document if provided by an information source outside of Ampleon. In no event shall Ampleon be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, Ampleon's aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of Ampleon. Right to make changes -- Ampleon reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- Ampleon products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an CLF1G0035-200P_1G0035S-200P Product data sheet Ampleon product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Ampleon and its suppliers accept no liability for inclusion and/or use of Ampleon products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Ampleon makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Ampleon products, and Ampleon accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the Ampleon product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Ampleon does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using Ampleon products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). Ampleon does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- Ampleon products are sold subject to the general terms and conditions of commercial sale, as published at http://www.ampleon.com/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Ampleon hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of Ampleon products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 17 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT Non-automotive qualified products -- Unless this data sheet expressly states that this specific Ampleon product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Ampleon accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Ampleon' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Ampleon' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies Ampleon for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Ampleon' standard warranty and Ampleon' product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Any reference or use of any `NXP' trademark in this document or in or on the surface of Ampleon products does not result in any claim, liability or entitlement vis-a-vis the owner of this trademark. Ampleon is no longer part of the NXP group of companies and any reference to or use of the `NXP' trademarks will be replaced by reference to or use of Ampleon's own trademarks. 14. Contact information For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales CLF1G0035-200P_1G0035S-200P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 -- 22 April 2016 (c) Ampleon Netherlands B.V. 2016. All rights reserved. 18 of 19 CLF1G0035(S)-200P Broadband RF power GaN HEMT 15. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.3.1 7.3.2 7.3.3 7.3.4 8 8.1 8.2 8.3 9 10 10.1 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 4 Demo circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application test results . . . . . . . . . . . . . . . . . . . 7 Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 8 1-Tone CW RF performance. . . . . . . . . . . . . . . 8 1-Tone pulsed RF performance . . . . . . . . . . . . 9 2-Tone CW performance . . . . . . . . . . . . . . . . 10 Bias module . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Ruggedness in class-AB operation . . . . . . . . 11 Load pull impedance information . . . . . . . . . . 11 Packaged S-parameter data. . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Handling information. . . . . . . . . . . . . . . . . . . . 16 ESD Sensitivity . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) Ampleon Netherlands B.V. 2016. All rights reserved. For more information, please visit: http://www.ampleon.com For sales office addresses, please visit: http://www.ampleon.com/sales Date of release: 22 April 2016 Document identifier: CLF1G0035-200P_1G0035S-200P