IRFI4229PbF Features HEXFET(R) Power MOSFET Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications Low QG for Fast Response High Repetitive Peak Current Capability for Reliable Operation Short Fall & Rise Times for Fast Switching 150C Operating Junction Temperature for Improved Ruggedness Repetitive Avalanche Capability for Robustness and Reliability Key Parameters VDS max 250 V VDS (Avalanche) typ. 300 V RDS(ON) typ. @ 10V 38 m IRP max @ TC= 100C 32 A TJ max 150 C G D S TO-220 Full-Pak G Gate D Drain S Source Description This HEXFET(R) Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications Base Part Number Package Type IRFI4229PbF TO-220 Full-Pak Absolute Maximum Ratings Symbol Standard Pack Form Quantity Tube 50 Orderable Part Number IRFI4229PbF Parameter Max. 30 VGS Gate-to-Source Voltage ID @ TC = 25C Continuous Drain Current, VGS @ 10V 19 ID @ TC = 100C IDM IRP @ TC = 100C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Repetitive Peak Current 12 72 32 PD @TC = 25C Maximum Power Dissipation 46 PD @TC = 100C Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw TJ TSTG Thermal Resistance Symbol Junction-to-Case RJC Junction-to-Ambient RJA 1 Parameter Units V A W 18 0.37 W/C -40 to + 150 C 300 10 lbf*in (1.1N*m) Typ. --- --- Max. 2.73 65 Units C/W 2017-04-27 IRFI4229PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) gfs Qg Qgd td(on) tr td(off) tf tst Parameter Min. Drain-to-Source Breakdown Voltage 250 Breakdown Voltage Temp. Coefficient --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 3.0 Gate Threshold Voltage Temp. Coefficient --- --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Forward Trans conductance 26 Total Gate Charge --- Gate-to-Drain Charge --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Shoot Through Blocking Time 100 EPULSE Energy per Pulse V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS --- --- Ciss Coss Crss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance --- --- --- --- LD Internal Drain Inductance --- LS Internal Source Inductance --- Typ. --- 340 38 --- -12 --- --- --- --- --- 73 24 18 17 32 13 --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 1mA 46 m VGS = 10V, ID = 11A 5.0 V VDS = VGS, ID = 250A --- mV/C 20 VDS = 250V, VGS = 0V A 200 VDS = 250V,VGS = 0V,TJ =150C 100 VGS = 20V nA -100 VGS = -20V --- S VDS = 25V, ID = 11A 110 I = 11A,VDS = 125V nC D VGS = 10V --- --- VDD = 125V, VGS = 10V --- ns ID = 11A --- RG= 2.4 See Fig. 22 --- --- ns VDD = 200V,VGS = 15V,RG= 5.1 L = 220nH, C = 0.3F, VGS = 15V 770 --- VDD = 200V, RG= 5.1TJ = 25C J L = 220nH, C = 0.3F, VGS = 15V 1380 --- VDD = 200V, RG= 5.1TJ = 100C 4480 --- VGS = 0V 400 --- VDS = 25V pF = 1.0MHz 100 --- 270 --- VGS = 0V, VDS = 0V to 200V Between lead, 4.5 --- 6mm (0.25in.) nH from package 7.5 --- and center of die contact Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy EAR Repetitive Avalanche Energy VDS(Avalanche) Repetitive Avalanche Voltage IAS Avalanche Current Diode Characteristics Parameter Continuous Source Current IS @ TC = 25C (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Typ. --- --- 300 --- Min. Typ. Max. Units --- --- 18 --- --- 72 --- --- 1.3 Max. 110 4.6 --- 11 Units mJ V A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 11A,VGS = 0V A trr Reverse Recovery Time --- 120 180 ns TJ = 25C ,IF = 11A, VDD = 50V Qrr Reverse Recovery Charge --- 540 810 nC di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25C, L = 1.9mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%. R is measured at TJ of approximately 90C. Half sine wave with duty cycle = 0.25, ton=1sec. 2 2017-04-27 IRFI4229PbF 1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V 100 1 0.1 VGS 15V 10V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V TOP ID, Drain-to-Source Current (A) TOP 5.0V BOTTOM 10 5.0V 1 60s PULSE WIDTH 60s PULSE WIDTH Tj = 150C Tj = 25C 0.1 0.01 0.1 1 10 0.1 100 Fig. 1. Typical Output Characteristics 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) VDS = 25V 60s PULSE WIDTH 10 T J = 150C 1 T J = 25C 0.1 3 4 5 6 ID = 11A VGS = 10V 2.5 2.0 1.5 1.0 0.5 0.0 7 -60 -40 -20 0 VGS, Gate-to-Source Voltage (V) 20 40 60 80 100 120 140 160 T J , Junction Temperature (C) Fig. 4. Normalized On-Resistance vs. Temperature Fig. 3. Typical Transfer Characteristics 1400 1400 L = 220nH C = 0.3F 100C 25C L = 220nH C = variable 100C 25C 1200 Energy per Pulse (J) 1200 Energy per Pulse (J) 100 Fig. 2. Typical Output Characteristics 100 1000 800 600 400 1000 800 600 400 200 0 200 140 150 160 170 180 190 200 210 VDS, Drain-to-Source Voltage (V) Fig 5. Typical EPULSE vs. Drain-to-Source Voltage 3 10 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) 1 100 110 120 130 140 150 160 170 ID , Peak Drain Current (A) Fig 6. Typical EPULSE vs. Drain Current 2017-04-27 IRFI4229PbF 1800 100 1600 Energy per Pulse (J) 1400 ISD, Reverse Drain Current (A) L = 220nH C = 0.3F 1200 1000 C = 0.2F 800 600 C = 0.1F 400 T J = 150C 10 T J = 25C 1 200 VGS = 0V 0 0.1 20 40 60 80 100 120 140 160 0.2 Temperature (C) Fig. 7. Typical EPULSE vs. Temperature 7000 VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) Ciss 4000 Coss 2000 1000 VDS = 200V VDS = 125V 10.0 VDS = 50V 8.0 6.0 4.0 2.0 C rss 0.0 0 1 10 100 0 1000 Fig 9. Typical Capacitance vs.Drain-to-Source Voltage 20 30 40 50 60 70 80 Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage 20 1000 18 ID, Drain-to-Source Current (A) 16 ID, Drain Current (A) 10 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 14 12 10 8 6 4 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100sec 10 1msec 1 10msec 0.1 Tc = 25C Tj = 150C Single Pulse 2 0 0.01 25 50 75 100 125 150 T C , Case Temperature (C) Fig 11. Maximum Drain Current vs. Case Temperature 4 1.0 ID = 11A Coss = Cds + Cgd 3000 0.8 12.0 Crss = C gd 5000 0.6 Fig 8. Typical Source-Drain Diode Forward Voltage VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED 6000 0.4 VSD , Source-to-Drain Voltage (V) 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 12. Maximum Safe Operating Area 2017-04-27 450 200 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) IRFI4229PbF ID = 11A 180 160 140 120 T J = 125C 100 80 60 T J = 25C 40 20 0 5 6 7 8 9 ID 2.3A 2.7A BOTTOM 11A 400 TOP 350 300 250 200 150 100 50 0 10 25 75 100 125 150 Fig. 14. Maximum Avalanche Energy Vs. Temperature Fig. 13. On-Resistance Vs. Gate Voltage 60 5.0 ton= 1s Duty cycle = 0.25 Half Sine Wave Square Pulse 50 Repetitive Peak Current (A) VGS(th) , Gate Threshold Voltage (V) 50 Starting T J , Junction Temperature (C) VGS, Gate -to -Source Voltage (V) 4.0 ID = 250A 3.0 40 30 20 10 0 2.0 -75 -50 -25 0 25 50 25 75 100 125 150 50 75 100 125 150 Case Temperature (C) T J , Temperature ( C ) Fig. 15. Threshold Voltage vs. Temperature Fig. 16. Typical Repetitive peak Current vs. Case temperature Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 J 0.01 R2 R2 R3 R3 C 2 1 2 3 3 Ci= iRi Ci= iRi SINGLE PULSE ( THERMAL RESPONSE ) 0.001 R1 R1 J 1 C Ri (C/W) i (sec) 0.3671 0.000287 1.0580 0.162897 1.3076 2.426 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-04-27 IRFI4229PbF Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs Fig 19a. Unclamped Inductive Test Circuit Fig 20a. Gate Charge Test Circuit 6 Fig 19b. Unclamped Inductive Waveforms Fig 20b. Gate Charge Waveform 2017-04-27 IRFI4229PbF Fig 21a. tst and EPULSE Test Circuit Fig 21b. tst Test Waveforms Fig 21c. EPULSE Test Waveforms Fig 22a. Switching Time Test Circuit 7 Fig 22b. Switching Time Waveforms 2017-04-27 IRFI4229PbF TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/ 8 2017-04-27 IRFI4229PbF Qualification Information Industrial (per JEDEC JESD47F) Qualification Level TO-220 Full-Pak Moisture Sensitivity Level N/A Yes RoHS Compliant Applicable version of JEDEC standard at the time of product release. Revision History Date 04/27/2017 Comments Changed datasheet with Infineon logo - all pages. Corrected Package Outline on page 8. Added disclaimer on last page. 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