BCW65 SERIES
BCW66 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW65 and
BCW66 Series types are NPN Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for
general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE
ON FOLLOWING PAGE
MAXIMUM RATINGS: (TA=25°C) SYMBOL BCW65 BCW66 UNITS
Collector-Base Voltage VCBO 60 75 V
Collector-Emitter Voltage VCEO 32 45 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 800 mA
Peak Collector Current ICM 1.0 A
Continuous Base Current IB 100 mA
Peak Base Current IBM 200 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=Rated VCEO 20 nA
ICBO V
CB= Rated VCEO, TA=150°C 20 µA
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10µA (BCW65) 60 V
BVCBO I
C=10µA (BCW66) 75 V
BVCEO I
C=10mA (BCW65) 32 V
BVCEO I
C=10mA (BCW66) 45 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100mA, IB=10mA 0.3 V
VCE(SAT) I
C=500mA, IB=50mA 0.7 V
VBE(SAT) I
C=100mA, IB=10mA 1.25 V
VBE(SAT) I
C=500mA, IB=50mA 2.0 V
fT V
CE=5.0V, IC=50mA, f=20MHz 170 MHz
Cc V
CB=10V, IE=0, f=1.0MHz 6.0 pF
Ce V
EB=0.5V, IC=0, f=1.0MHz 60 pF
BCW65A BCW65B BCW65C
BCW66F BCW66G BCW66H
MIN MAX MIN MAX MIN MAX
hFE V
CE=10V, IC=100µA 35 50 80
hFE V
CE=1.0V, IC=10mA 75 110 180
hFE V
CE=1.0V, IC=100mA 100 250 160 400 250 630
hFE V
CE=2.0V, IC=500mA 35 60 100
SOT-23 CASE
R2 (20-November 2009)
www.centralsemi.com
BCW65 SERIES
BCW66 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE MARKING CODE
BCW65A EA
BCW65B EB
BCW65C EC
BCW66F EF
BCW66G EG
BCW66H EH
www.centralsemi.com
R2 (20-November 2009)
