6MBP25RA120 - Fuji Electric

IGBT-IPM R series 1200V / 25A 6 in one-package

6MBP25RA120

Features

· Temperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· Compatible with existing IPM-N series packages

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol Rating Unit

Min. Max.

DC bus voltage

DC bus voltage (surge)

DC bus voltage (short operating)

Collector-Emitter voltage

INV Collector current DC

1ms

DC

Collector power dissipation One transistor

Junction temperature

Input voltage of power supply for Pre-Driver

Input signal voltage

Input signal current

Alarm signal voltage

Alarm signal current

Storage temperature

Operating case temperature

Isolating voltage (Case-Terminal)

Screw torque Mounting (M5)

Terminal (M5)

VDC

VDC(surge)

VSC

VCES

IC

ICP

-IC

PC

Tj

VCC *1

Vin *2

Iin

VALM *3

IALM *4

Tstg

Top

Viso *5

Item

0

200

0

-

0

-

0

-

-40

-20

-

900

1000

800

1200

25

50

25

198

150

20

Vz

1

Vcc

15

125

100

AC2.5

3.5 *6

V

A

W

°C

V

mA

V

mA

°C

kV

N·m

*1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.

*2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10.

*3 Apply VALM between terminal No. 16 and 10.

*4 Apply IALM to terminal No. 16.

*5 50Hz/60Hz sine wave 1 minute.

*6 Recommendable Value : 2.5 to 3.0 N·m

Electrical characteristics of power circuit (at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condtion Min. Typ. Max. Unit

INV Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

ICES

VCE(sat)

VF

VCE=1200V input terminal open

Ic=25A

-Ic=25A

– – 1.0 mA

– – 2.6 V

– – 3.0 V

Fig.1 Measurement of case temperature

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6MBP25RA120 IGBT-IPM

Electrical characteristics of control circuit(at Tc=Tj=25°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Power supply current of P-line side Pre-driver(one unit)

Power supply current of N-line side three Pre-driver

Input signal threshold voltage (on/off)

Input zener voltage

Over heating protection temperature level

Hysteresis

IGBT chips over heating protection temperature level

Hysteresis

Collector current protection level INV

Over current protection delay time

Under voltage protection level

Hysteresis

Alarm signal hold time

SC protection delay time

Limiting resistor for alarm

fsw=0 to 15kHz Tc=-20 to 100°C *7

ON

OFF

Rin=20k ohm

VDC=0V, Ic=0A, Case temperature

surface of IGBT chips

Tj=125°C

Tj=25°C Fig.2

Tj=25°C Fig.3

Iccp

ICCN

Vin(th)

VZ

TCOH

TCH

TjOH

TjH

IOC

tDOC

VUV

VH

tALM

tSC

RALM

3

10

1.00

1.25

-

110

-

150

-

38

-

11.0

0.2

1.5

-

1425

-

1.35

1.60

8.0

-

20

-

20

-

10

-

2

-

1500

18

65

1.70

1.95

-

125

-

12.5

-

12

1575

mA

V

°C

A

µs

V

ms

µs

ohm

Dynamic characteristics(at Tc=Tj=125°C, Vcc=15V)

Item Symbol Condition Min. Typ. Max. Unit

Switching time (IGBT)

Switching time (FWD)

ton IC=25A, VDC=600V

toff

trr IF=25A, VDC=600V

0.3 - -

- - 3.6

- - 0.4

µs

Thermal characteristics( Tc=25°C)

Item Symbol Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

Rth(j-c)

Rth(c-f)

- 0.63

- 1.33

0.05 -

°C/W

INV IGBT

FWD

Item Symbol Min. Typ. Max. Unit

DC bus voltage

Operating power supply voltage range of Pre-driver

Switching frequency of IPM

Screw torque Mounting (M5)

Terminal (M5)

VDC 200 - 800 V

VCC 13.5 15 16.5 V

fSW 1 - 20 kHz

- 2.5 - 3.0 N·m

Recommendable value

*7 Switching frequency of IPM

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6MBP25RA120 IGBT-IPM

Block diagram

Outline drawings, mm

Mass : 440g

Pre-drivers include following functions

a) Amplifier for driver

b) Short circuit protection

c) Undervoltage lockout circuit

d) Over current protection

e) IGBT chip over heating protection

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6MBP25RA120 IGBT-IPM

Characteristics (Representative)

Control Circuit

0

0.5

1

1.5

2

2.5

12 13 14 15 16 17 18

In p ut s ig n a l th r e s h o ld vo l tage

vs. Powe r s upply vo lta g e

Input signal thres hold voltage

P ower supply voltage : Vcc (V)

Tj=25• •

Tj=125• •

} Vin(on)

} V in(off)

: V in (on ),V in(o ff) (V )

0

0.5

1

1.5

2

2.5

3

12 13 14 15 16 17 18

Alarm hold time vs. Power suppl

y

vo lta

g

e

A larm h o ld time : tA L M (mS ec )

P ow er s up ply voltage : V cc (V )

Tj=125°C

Tj=25°C

0

2

4

6

8

10

12

14

20 40 60 80 100 120 140

U nder voltage vs. Junction tem perature

Under voltage : VUV T (V)

Junction temperature : Tj (°C)

0

5

10

15

20

25

30

0 5 10 15 20 25

Power supply current vs. S witching frequency

Tj=100°C

Vcc=13V

Vcc=15V

Vcc=17V

N-side

P-side

P o w e r s u p p ly cu rre n t : Ic c (mA )

Switchin

g

frequenc

y

: fs w (k Hz )

0

0.2

0.4

0.6

0.8

1

20 40 60 80 100 120 140

Under volta

g

e hysteris is vs. Jnction temp erature

Un der voltage hysterisis : VH (V)

Junction temperature : Tj (°C)

0

50

100

150

200

12 13 14 15 16 17 18

O ver he atin

g

characteristics

TcOH,TjOH ,TcH,TjH vs. Vcc

O ver heating protection : TcOH,TjO H (°C)

P owe r sup ply vo ltage : Vcc (V)

TjOH

TcOH

TcH,TjH

O H hysterisis : TcH ,TjH (°C )

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6MBP25RA120 IGBT-IPM

Inverter

0

5

10

15

20

25

30

35

40

0 0.5 1 1.5 2 2.5 3

Collector current vs. Collector-Emitter volta

g

e

Tj=25°C

Vcc=13V

Vcc=15V

Vcc=17V

Collector Current : Ic (A)

Collector-Emitter volta

g

e : Vce (V)

0

5

10

15

20

25

30

35

40

0 0.5 1 1.5 2 2.5 3

C olle c to r cu r re n t vs . Co lle c to r-Emitte r vo lta g e

Tj=125°C

Vcc=13V

Vcc=15V

Vcc=17V

C o llecto r C u rre nt : Ic (A )

Collector-Emitter voltage : Vce (V)

10

100

1000

10000

0 5 10 15 20 25 30 35 40

S w itch in g time vs . C o lle c to r c u r re n t

Edc=600V,Vcc=15V,Tj=25°C

S witc h in g time : to n ,to f f,tf (n Se c )

C o llec tor c u rre nt : Ic (A)

toff

ton

tf

10

100

1000

10000

0 5 10 15 20 25 30 35 40

S witc h in g time v s . Co lle c to r cu rr e n t

Edc=600V,Vcc=15V,Tj=125°C

S witc h in g time : to n ,toff,tf (n S e c )

C ollecto r c u rrent : Ic ( A )

toff

ton

tf

0

5

10

15

20

25

30

35

40

00.511.522.53

Fo rward cu rre nt vs. F orward voltage

125°C 25°C

Forward C urrent : If (A)

Forward voltag e : Vf (V)

1

10

100

1000

0 5 10 15 20 25 30 35 40

Reverse recovery characteristics

trr,Irr vs . IF

R e vers e rec ove ry c urren t : Irr(A )

Rev e rs e re c o v er y time : t rr(n S ec)

Fo rwar d c urre n t : I F (A)

trr125°C

trr25°C

Irr125°C

Irr25°C

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6MBP25RA120 IGBT-IPM

0.01

0.1

1

10

0.001 0.01 0.1 1

T ra n sie n t th e r mal re s is tan c e

Therm al resistance : Rth(j-c) (°C/W)

P u lse w idth :Pw (se c)

FWD

IGBT

0

50

100

150

200

250

300

350

0 200 400 600 800 1000 1200 1400

Reversed biased safe operatin

g

area

Vcc=15V,Tj 125°C

Collector current : Ic (A)

Collector-Emitter volta

g

e : Vce (V)

SCSOA

(non-repetit ive pulse)

RBSOA

(Repetitive pulse)

=

<

0

20

40

60

80

100

0 20 40 60 80 100 120 140 160

P ower deratin

g

for FW D

(pe r de vice)

C o lle cte r P o w er D iss ip atio n : P c (W)

Case Temperature : Tc (°C)

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Sw it c h ing L os s v s . Co llec t o r C urr e n t

Edc=600V,Vcc=15V,Tj=25°C

Eon

Eoff

Err

Sw itchin g loss : E on,Eoff,E rr (mJ/cycle)

C o lle c t or c u rre n t : Ic (A )

0

2

4

6

8

10

12

0 5 10 15 20 25 30 35 40

Switching Los s vs. C ollec tor Current

Edc=600V,Vcc=15V,Tj=125°C

Eon

Eoff

Err

S w itc h in g lo s s : Eo n ,E off,E rr (mJ/c y c le )

C o lle c to r curre nt : Ic (A )

0

50

100

150

200

250

0 20 40 60 80 100 120 140 160

P o w er dera tin

g

fo r IGB T

(p e r de vic e )

C ollecter Pow er D is sipation : P c (W)

C ase Tem peratu re : Tc (°C )

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6MBP25RA120 IGBT-IPM

0

20

40

60

80

100

0 20406080100120140

Ov e r cu r ren t pr o tec ti o n vs . Jun ction tempe r a tur e

Vcc=15V

O ve r cu rre nt pro tec tion lev e l : Ioc (A )

Junction temperature : Tj(°C)

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