6MBP25RA120 1200V / 25A 6 in one-package IGBT-IPM R series Features * Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * Compatible with existing IPM-N series packages * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25C unless otherwise specified) Symbol Item DC bus voltage DC bus voltage (surge) DC bus voltage (short operating) Collector-Emitter voltage INV Collector current DC 1ms DC Collector power dissipation One transistor Junction temperature Input voltage of power supply for Pre-Driver Input signal voltage Input signal current Alarm signal voltage Alarm signal current Storage temperature Operating case temperature Isolating voltage (Case-Terminal) Screw torque Mounting (M5) Terminal (M5) VDC VDC(surge) VSC VCES IC ICP -IC PC Tj VCC *1 Vin *2 Iin VALM *3 IALM *4 Tstg Top Viso *5 Rating Min. Max. 0 0 200 0 0 0 0 -40 -20 - 900 1000 800 1200 25 50 25 198 150 20 Vz 1 Vcc 15 125 100 AC2.5 3.5 *6 3.5 *6 Unit V V V V A A A W C V V mA V mA C C kV N*m N*m Fig.1 Measurement of case temperature *1 Apply Vcc between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 Apply Vin between terminal No. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 Apply VALM between terminal No. 16 and 10. *4 Apply IALM to terminal No. 16. *5 50Hz/60Hz sine wave 1 minute. *6 Recommendable Value : 2.5 to 3.0 N*m Electrical characteristics of power circuit (at Tc=Tj=25C, Vcc=15V) Item INV Symbol Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD ICES VCE(sat) VF Condtion VCE=1200V input terminal open Ic=25A -Ic=25A http://store.iiic.cc/ Min. Typ. - - - - - - Max. Unit 1.0 2.6 3.0 mA V V 6MBP25RA120 IGBT-IPM Electrical characteristics of control circuit(at Tc=Tj=25C, Vcc=15V) Item Power supply current of P-line side Pre-driver(one unit) Power supply current of N-line side three Pre-driver Input signal threshold voltage (on/off) Symbol Iccp ICCN Vin(th) Input zener voltage Over heating protection temperature level Hysteresis IGBT chips over heating protection temperature level Hysteresis Collector current protection level INV Over current protection delay time Under voltage protection level Hysteresis Alarm signal hold time SC protection delay time Limiting resistor for alarm *7 Switching frequency of IPM VZ TCOH TCH TjOH TjH IOC tDOC VUV VH tALM tSC RALM Condition fsw=0 to 15kHz Tc=-20 to 100C *7 fsw=0 to 15kHz Tc=-20 to 100C *7 ON OFF Rin=20k ohm VDC=0V, Ic=0A, Case temperature surface of IGBT chips Tj=125C Tj=25C Fig.2 Tj=25C Fig.3 Min. Typ. Max. 3 18 10 65 1.00 1.35 1.70 1.25 1.60 1.95 8.0 110 125 20 150 20 38 10 11.0 12.5 0.2 1.5 2 12 1425 1500 1575 Unit mA mA V V V C C C C A s V V ms s ohm Dynamic characteristics(at Tc=Tj=125C, Vcc=15V) Item Switching time (IGBT) Symbol Condition ton toff trr Switching time (FWD) Min. IC=25A, VDC=600V Typ. Max. Unit - - s s s 0.3 - IF=25A, VDC=600V 3.6 0.4 Thermal characteristics( Tc=25C) Item Junction to Case thermal resistance INV IGBT FWD Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(c-f) Typ. 0.05 Max. 0.63 1.33 - Unit C/W C/W C/W Typ. 15 - Max. 800 16.5 20 3.0 3.0 Unit V V kHz N*m N*m Recommendable value Item DC bus voltage Operating power supply voltage range of Pre-driver Switching frequency of IPM Screw torque Mounting (M5) Terminal (M5) Symbol VDC VCC fSW - Min. 200 13.5 1 2.5 2.5 http://store.iiic.cc/ 6MBP25RA120 IGBT-IPM Block diagram Pre-drivers include following functions a) Amplifier for driver b) Short circuit protection c) Undervoltage lockout circuit d) Over current protection e) IGBT chip over heating protection Outline drawings, mm Mass : 440g http://store.iiic.cc/ 6MBP25RA120 IGBT-IPM Characteristics (Representative) Control Circuit Power supply current vs. Switching frequency Tj=100C In pu t sig n al thresho ld voltag e vs. Po wer su p p ly vo lta ge 2.5 25 V cc= 15V V cc= 13V 20 15 10 V cc= 17V 5 V cc= 13V V cc= 15V : V in (on ),V in(o ff) (V ) V cc= 17V P -sid e N -sid e In pu t s ign a l th res ho ld v o lta ge P owe r su p ply cu rre nt : Ic c (m A ) 30 2 } V in(o ff) 1.5 } V in(o n) 1 0.5 0 0 0 5 10 15 20 12 25 13 S witchin g freq ue nc y : fsw (kH z) 14 15 16 17 18 P ow e r s up p ly v oltag e : V c c (V ) U n d er vo ltag e hys teris is vs . Jnc tion tem p e rature U n d e r v o lta g e v s . J u n c tio n te m p e ra tu re 1 U n d e r vo lta g e h yste risis : V H (V ) 14 12 U n d e r v o lta ge : V U V T (V ) T j=2 5* * T j=1 25 * * 10 8 6 4 0.8 0.6 0.4 0.2 2 0 0 20 40 60 80 10 0 12 0 20 14 0 40 80 10 0 12 0 14 0 17 18 O ver he ating charac teris tics T c O H ,T jO H ,T c H ,T jH v s. V cc A larm h old tim e vs. Po we r sup ply voltag e 200 O v er he ating protection : T cO H ,T jO H (C ) O H hysterisis : T cH ,T jH (C ) 3 2.5 Tj=125C A larm h o ld tim e : tA L M (m S e c ) 60 Junction temperature : Tj (C) Junction temperature : Tj (C) 2 Tj=25C 1.5 1 0.5 0 TjO H 150 TcO H 100 50 TcH,TjH 0 12 13 14 15 16 17 18 12 P ow e r s up p ly v oltag e : V cc (V ) 13 14 15 16 P ow e r s upply vo ltage : V cc (V) http://store.iiic.cc/ 6MBP25RA120 IGBT-IPM Inverter C o llec to r cu rren t vs . C o lle cto r-E m itte r vo lta g e Tj= 1 25 C Collector current vs. Collector-Emitter voltage Tj=25C Vcc=15V 40 V cc= 15V 40 Vcc=17V 35 Vcc=13V C ollec to r C u rre nt : Ic (A ) Collector Current : Ic (A) 35 30 25 20 15 25 20 15 10 5 5 0 0.5 1 1.5 2 2.5 V cc= 13V 30 10 0 V cc= 17V 0 3 0 0.5 Collector-Emitter voltage : Vce (V) 2 2.5 3 1 000 0 S w itc hin g tim e : ton ,to ff,tf (n S e c) 1 000 0 to ff 1000 to n tf 10 0 to ff to n 1000 tf 100 10 10 0 5 10 15 20 25 30 35 0 40 5 10 15 20 25 30 35 40 C o lle c tor c u rre nt : Ic (A ) C o lle c tor c u rre nt : Ic (A ) R everse reco very ch aracteristics trr,Irr vs. IF F o rw a rd cu rre n t vs. F orw a rd vo lta g e 40 12 5C R e ve rse rec ove ry c u rre n t : Irr(A ) R eve rse re c o ve ry tim e : trr(n S e c) 1 00 0 35 F orw a rd C u rre n t : If (A ) 1.5 S w itc h in g tim e vs . C o lle c to r c u rre n t E d c = 6 0 0 V ,V cc = 1 5 V ,Tj= 1 2 5 C S witc h in g tim e vs . C ollector c u rren t E d c =6 00 V ,V cc= 15 V ,Tj= 25 C S w itc hin g tim e : ton ,to ff,tf (n S e c ) 1 C olle c to r-Em itte r vo lta g e : V c e (V) 25C 30 25 20 15 10 trr1 2 5 C trr2 5C 100 Irr12 5 C 10 Irr2 5C 5 0 0 0.5 1 1.5 2 2.5 3 Fo rw a rd vo lta g e : V f (V ) 1 0 5 10 15 20 25 F o rw ard c u rre nt : IF (A ) http://store.iiic.cc/ 30 35 40 6MBP25RA120 IGBT-IPM Reversed biased safe operating area Vcc=15V,Tj <= 125C Tra n s ie n t th e rm a l re sista n c e 350 300 FW D 1 IG B T 0.1 Collector current : Ic (A) T h erm a l re s ista n ce : R th (j-c ) (C /W ) 10 250 200 SCSOA (non-repetitive pulse) 150 100 50 RBSOA (Repetitive pulse) 0 0 .0 1 0.00 1 0 .0 1 0.1 1 0 200 P ow er d era tin g fo r IG B T (p er device) 600 800 1000 1200 1400 P ow er dera ting for F W D (pe r d evice) 2 50 C o lle cte r P o w er D iss ip ation : P c (W ) 10 0 2 00 1 50 1 00 50 80 60 40 20 0 0 0 20 40 60 80 1 00 1 20 1 40 0 20 1 60 40 60 80 10 0 12 0 14 0 16 0 C a se T e m p era ture : T c (C ) C a se Tem peratu re : T c (C ) S witchin g Lo s s vs. C olle c to r C u rrent E dc =600 V ,V cc= 15V ,Tj= 25 C S w itch in g L o s s vs . C o lle c to r C u rre nt E dc =6 0 0 V ,V cc =1 5 V ,Tj= 1 2 5 C 12 12 S w itch in g lo s s : E o n,Eo ff,E rr (m J/cy c le) S w itc h in g lo s s : E o n, E o ff,E rr (m J/c y c le) C ollecter P ow er D is s ipa tion : P c (W ) 400 Collector-Emitter voltage : Vce (V) P u ls e w idth :P w (s e c ) 10 8 Eo n 6 4 Eo ff 2 E rr Eo n 10 8 6 Eo ff 4 E rr 2 0 0 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 C o lle ctor cu rre nt : Ic (A ) C o lle ct or c u rre nt : Ic (A ) http://store.iiic.cc/ 35 40 6MBP25RA120 IGBT-IPM O ver curre nt p ro te ction v s. J u nctio n te m p eratu re Vcc =1 5 V O ver current protection level : Ioc(A) 100 80 60 40 20 0 0 20 40 60 80 100 120 Junction tem perature : Tj(C) 140 http://store.iiic.cc/