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Features
NPN Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC600 mA
Power Dissipation on FR-5 Board(1) TA= 25°C Ptot 225 mW
Derate above 25°C 1.8 mW/°C
Power Dissipation on Alumina Substrate(2) TA= 25°C Ptot 300 mW
Derate above 25°C 2.4 mW/°C
Thermal Resistance Junction FR-5 Board RΘJA 556 °C/W
to Ambient Air Alumina Substrate 417
Junction Temperature Tj150 °C
Storage Temperature Range TS– 55 to +150 °C
Notes: (1) FR-5 = 1.0 x 0.75 x 0.062 in.
(2) Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008g
.016 (0.4)
.056 (1.43)
.037(0.95).037(0.95)
max. .004 (0.1)
.122 (3.1)
.016 (0.4) .016 (0.4)
12
3Top View
.102 (2.6)
.007 (0.175)
.045 (1.15)
.110 (2.8)
.052 (1.33)
.005 (0.125)
.094 (2.4)
.037 (0.95)
TO-236AB (SOT-23)
Dimensions in inches and (millimeters)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
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COMCHIP
Small Signal Transistor (NPN)
0.079 (2.0)
0.037 (0.95)
0.035 (0.9)
0.037 (0.95)
Mounting Pad Layout
MMBT2222A
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
VCE = 10 V, IC= 0.1 mA 35 — —
VCE = 10 V, IC= 1 mA 50 — —
VCE = 10 V, IC= 10 mA 75 — —
DC Current Gain hFE VCE = 10 V, IC= 10 mA 35———
TA= -55°C
VCE = 10 V, IC= 150 mA(1) 100 — 300
VCE = 10 V, IC= 500 mA(1) 40 — —
VCE = 1.0 V, IC= 150 mA(1) 50 — —
Collector-Base Breakdown Voltage V(BR)CBO IC= 10 µA, IE= 0 75 — — V
Collector-Emitter Breakdown Voltage(1) V(BR)CEO IC= 10 mA, IB= 0 40 — — V
Emitter-Base Breakdown Voltage V(BR)EBO IC= 10 µA, IC= 0 6.0 — — V
Collector-Emitter Saturation Voltage(1) VCEsat IC= 150 mA, IB= 15 mA — — 0.3 V
IC= 500 mA, IB= 50 mA — — 1.0
Base-Emitter Saturation Voltage(1) VBEsat IC= 150 mA, IB= 15 mA 0.6 — 1.2 V
IC= 500 mA, IB= 50 mA — — 2.0
Collector Cut-off Current ICEX VEB = 3 V, VCE = 60 V — — 10 nA
VCB = 60 V, IE= 0 — — 10 nA
Collector Cut-off Current ICBO VCB = 50 V, IE= 0 V ——10µA
TA= 125°C
Base Cut-off Current IBL VEB = 3 V, VCE = 60 V — — 20 nA
Emitter Cut-off Current IEBO VEB = 3 VDC, IC= 0 — — 100 nA
Current Gain-Bandwidth Product fTVCE = 20 V, IC= 20 mA 300 — — MHz
f = 100 MHz
Output Capacitance Cobo VCB = 10 V, f = 1 MHz, IE= 0 — — 8 pF
Input Capacitance Cibo VEB = 0.5V, f = 1MHz,IC= 0 — — 25 pF
Noise Figure NF VCE = 10V, IC= 100 µA, — — 4.0 dB
RS=1 kΩ, f = 1 kHz
VCE = 10 V, IC= 1 mA 2 — 8.0
Input Impedance hie f = 1 kHz kΩ
VCE = 10 V, IC= 10 mA 0.25 — 1.25
f = 1 kHz
VCE = 10 V, IC= 1 mA, 50 — 300
Small Signal Current Gain hfe f = 1 kHz —
VCE = 10 V, IC= 10 mA, 75 — 375
f = 1 kHz
Voltage Feedback Ratio hre VCE = 10 V, IC= 1 mA, 50 — 300 —
f = 1 kHz 75 — 375
VCE = 10 V, IC= 1 mA, 5.0 — 35
Output Admittance hoe f = 1 kHz µS
VCE = 10 V, IC= 10 mA, 25 — 200
f = 1 kHz
Note:
(1) Pulse Test: Pulse width ≤300 µs - Duty cycle ≤2%
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Small Signal Transistor (NPN)
Page 2
Electrical Characteristics (TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Collector Base Time Constant rb’CCIE= 20 mA, VCB = 20 V, — — 150 ps
f = 31.8 MHz
Delay Time (see fig. 1) tdIB1 = 15 mA, IC= 150 mA, — — 10 ns
VCC = 30V, VBE = -0.5 V
Rise Time (see fig. 1) trIB1 = 15 mA, IC= 150 mA, — — 25 ns
VCC = 30V, VBE = -0.5 V
Storage Time (see fig. 2) tsIB1 = IB2 = 15 mA, — — 225 ns
IC= 150 mA, VCC = 30V
Fall Time (see fig. 2) tfIB1 = IB2 = 15 mA, — — 60 ns
IC= 150 mA, VCC = 30V
< 2 ns
0C * < 10 pF
S
200Ω
1.0 to 100 µs, DUTY CYCLE ≈ 2% +30V
+16 V
-2 V 1kΩ
Scope rise time < 4ns
*Total shunt capacitance of test jig,
connectors and oscilloscope
Switching Time Equivalent T est Circuit
Figure 1. Turn-ON Time
Figure 2. Turn-OFF Time
200Ω
+30V
-4 V
C < 10 pF
S*
1.0 to 100 µs, DUTY CYCLE ≈ 2%
1kΩ
< 20 ns
0
+16 V
-14 V
Page 3
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COMCHIP
COMCHIP
Small Signal Transistor (NPN)
