APTGF165A60D1G
APTGF165A60D1G – Rev 2 December, 2009
www.microsemi.com 1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 600 V
TC = 25°C 230
IC Continuous Collector Current TC = 80°C 165
ICM Pulsed Collector Current TC = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 781 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A@420V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
2
1
3
5
Q2
7
6
Q1
4
VCES = 600V
IC = 165A @ Tc = 80°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Non Punch Through (NPT) FAST IGBT
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• High level of integration
• M5 power connectors
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• RoHS Compliant
Phase leg
N
PT IGBT Power Module
APTGF165A60D1G
APTGF165A60D1G – Rev 2 December, 2009
www.microsemi.com 2-4
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Tj = 25°C 250
ICES Zero Gate Voltage Collector Current VGE = 0V
VCE = 600V Tj = 125°C 500 µA
Tj = 25°C 1.95 2.45
VCE(sat) Collector Emitter saturation Voltage VGE = 15V
IC = 200A Tj = 125°C 2.2 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 4 mA 4.5 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 9000
Cres Reverse Transfer Capacitance
VGE = 0V, VCE = 25V
f = 1MHz 800 pF
QG Gate charge VGE=15V, IC=200A
VCE=300V 650 nC
Td(on) Turn-on Delay Time 150
Tr Rise Time 72
Td(off) Turn-off Delay Time 530
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω 40
ns
Td(on) Turn-on Delay Time 160
Tr Rise Time 75
Td(off) Turn-off Delay Time 550
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω 50
ns
Eon Turn on energy Tj = 125°C 9
Eoff Turn off energy
VGE = ±15V
VBus = 300V
IC = 200A
RG = 16Ω Tj = 125°C 8.5
mJ
Isc Short Circuit data VGE ≤15V ; VBus = 360V
tp ≤ 10µs ; Tj = 125°C 900 A
Reverse diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 100
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 200 A
Tj = 25°C 1.25 1.6
VF Diode Forward Voltage IF = 200A
VGE = 0V Tj = 125°C 1.2 V
Tj = 25°C 150
trr Reverse Recovery time Tj = 125°C 250 ns
Tj = 25°C 13
Qrr Reverse Recovery Charge Tj = 125°C 20 µC
Tj = 25°C 2.9
Err Reverse Recovery Energy
IF = 200A
VR = 300V
di/dt =3500A/µs
Tj = 125°C 5.7 mJ
APTGF165A60D1G
APTGF165A60D1G – Rev 2 December, 2009
www.microsemi.com 3-4
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.16
RthJC Junction to Case Thermal Resistance Diode 0.30 °C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 125
°C
For terminals M5 2 3.5
Torque Mounting torque To Heatsink M6 3 5 N.m
Wt Package Weight 180 g
D1 Package outline (dimensions in mm)
Typical Performance Curve
hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
70
0 50 100 150 200 250
I
C
(A)
Fmax, Operating Frequency (kHz)
V
CE
=300V
D=50%
R
G
=16Ω
T
J
=125°C
T
C
=75°C
Operating Frequency vs Collector Current Forward Characteristic of diode
T
J
=25°C
T
J
=125°C
0
100
200
300
400
0 0.3 0.6 0.9 1.2 1.5
V
F
(V)
I
F
(A)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APTGF165A60D1G
APTGF165A60D1G – Rev 2 December, 2009
www.microsemi.com 4-4
Output Characteristics (V GE=15V)
T
J
=25°C
T
J
=125°C
0
100
200
300
400
00.511.522.533.5
VCE (V)
IC (A)
Output Characteristics
V
GE
=15V
V
GE
=12V
V
GE
=20V
V
GE
=9V
0
100
200
300
400
012345
VCE (V)
IC (A)
T
J
= 125°C
Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
100
200
300
400
56789101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Err
0
5
10
15
20
0 100 200 300 400
IC (A)
E (mJ)
V
CE
= 300V
V
GE
= 15V
R
G
= 16 Ω
T
J
= 125°C
Eon
Eoff
Err
0
5
10
15
20
25
30
0 20406080
Gate Resistance (ohms)
E (mJ)
V
CE
= 300V
V
GE
=15V
I
C
= 200A
T
J
= 125°C
Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area
0
100
200
300
400
500
0 100 200 300 400 500 600
VCE (V)
IC (A)
V
GE
=15V
T
J
=125°C
R
G
=16 Ω
maximum E ffecti ve Transient Thermal Impedance, Junction to Pulse Dur ati o n
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.03
0.06
0.09
0.12
0.15
0.18
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
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