2SJ506(L)-(S) - Hitachi Semiconductor

2SJ506(L), 2SJ506(S)

Silicon P Channel MOS FET

High Speed Power Switching

ADE-208-548C (Z)

4th. Edition

Jun. 1998

Features

• Low on-resistance

RDS(on) = 0.065 Ω typ. (at VGS = –10V, ID = –5A)

• Low drive current

• High speed switching

• 4V gate drive devices.

Outline

123

1. Gate

2. Drain

3. Source

4. Drain

DPAK–2

2SJ506(L), 2SJ506(S)

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage VDSS –30 V

Gate to source voltage VGSS ±20 V

Drain current ID–10 A

Drain peak current ID(pulse) Note1 –40 A

Body to drain diode reverse drain current IDR –10 A

Channel dissipation Pch Note2 20 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

2SJ506(L), 2SJ506(S)

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

voltage V(BR)DSS –30 — — V ID = –10mA, VGS = 0

Gate to source breakdown

voltage V(BR)GSS ±20 — — V IG = ±100µA, VDS = 0

Zero gate voltege drain

current IDSS — — –10 µAV

DS = –30 V, VGS = 0

Gate to source leak current IGSS — — ±10 µAV

GS = ±16V, VDS = 0

Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1mA, VDS = –10V

Static drain to source on state RDS(on) —6585mΩI

= –5A, VGS = –10VNote3

resistance RDS(on) — 110 180 mΩID = –5A, VGS = –4V Note3

Forward transfer admittance |yfs| 1016—S I

= –5A, VDS = –10V Note3

Input capacitance Ciss — 660 — pF VDS = –10V

Output capacitance Coss — 440 — pF VGS = 0

Reverse transfer capacitance Crss — 140 — pF f = 1MHz

Turn-on delay time td(on) — 12 — ns ID = –5A, RL = 2Ω

Rise time tr— 65 — ns VGS = –10V

Turn-off delay time td(off) —85—ns

Fall time tf—65—ns

Body to drain diode forward

voltage VDF — –1.05 — V IF = –10A, VGS = 0

Body to drain diode reverse

recovery time trr — 65 — ns IF = –10A, VGS = 0

diF/ dt = 50A/µs

Note: 3. Pulse test

2SJ506(L), 2SJ506(S)

Main Characteristics

050 100 150 200

–20

–16

–12

–8

–4

0–4 –8 –12 –16 –20

–4 V

0 –1–2–3–4–5

–3 V

–20

–16

–12

–8

–4

–3.5 V

V = –10 V

Pulse Test

–10 V

Tc = –25 °C

Pulse Test

V = –2.5 V

GS 75 °C

–5 V

–4.5 V 25 °C

–6 V

–8 V

–500

–200

–100

–20

–0.1

–10

–2

–10

–0.1–0.2 –0.5 –1 –2 –5

–50

–5

–1

–0.2

–0.5

–20 –50

Ta = 25 °C

1 ms

PW = 10 ms (1shot)

10 µs

100 µs

DC Operation

(Tc = 25 °C)

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Operation in

this area is

limited by RDS(on)

Drain Current I (A)

Typical Output Characteristics

Drain to Source Voltage V (V)

DS Gate to Source Voltage V (V)

Typical Transfer Characteristics

Drain Current I (A)

2SJ506(L), 2SJ506(S)

–2

–1.6

–1.2

–0.8

–0.4

0–4 –8 –12 –16 –20

200

160

120

–40 0 40 80 120 160

–2,–5 A

Pulse Test

I = –10 A

V = –10 V

–10 A

V = –4 V –2 A

100

0.5

I = –10 A

–2 A

–5 A

–0.1 –50

–0.2 –0.5 –1 –2 –5 –10 –20

25 °C

75 °C

V = –10 V

Pulse Test

Tc = –25 °C

–1 –2 –5 –10 –20 –50 –100

1000

500

200

100

Pulse Test

–10 V

V = –4 V

–5 A

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Gate to Source Voltage V (V)

Static Drain to Source on State Resistance

vs. Drain Current

Drain Current I (A)

Drain to Source On State Resistance

R ( )Ω

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

Ω

Forward Transfer Admittance vs.

Drain Current

Drain Current I (A)

Forward Transfer Admittance |y | (S)

2SJ506(L), 2SJ506(S)

100

–0.1 –0.2 –1 0 –10 –20 –30 –40 –50

200

100

1000

200

500

100

–0.1–0.2 –1 –2 –5

–0.5 –5

–10

500

–20 –50

–2

1000

2000

5000

Ciss

Coss

Crss

V = 0

f = 1 MHz

–20

–10

–20

–30

–40

–4

–8

–12

–16

–20–50 81624

32 40

V = –25 V

–10 V

–5 V

V = –5 V

–10 V

–25 V

I = –10 A

–0.5 –10

d(off)

d(on)

V = –10 V, V = –10 V

PW = 10 µs, duty < 1 %

GS DD

di / dt = 50 A / µs

V = 0, Ta = 25 °C

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.

Drain to Source Voltage

Dynamic Input Characteristics

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Switching Time t (ns)

Switching Characteristics

Drain Current I (A)

2SJ506(L), 2SJ506(S)

–20

–16

–12

–8

–4

0–0.4 –0.8 –1.2 –1.6 –2.0

–10 V

–5 V Pulse Test

V = 0.5 V

0.3

0.1

0.03

0.01

10 µ100 µ1 m 10 m 100 m 1 10

D = PW

ch – c(t) = s (t) • ch – c

ch – c = 6.25 °C/W, Tc = 25 °C

θ γ θ

D = 1

0.5

0.2

0.01

0.02

0.1

0.05

1 shot Pulse

Tc = 25°C

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width

Reverse Drain Current vs.

Source to Drain Voltage

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Normalized Transient Thermal Impedance

s (t)

2SJ506(L), 2SJ506(S)

Vin Monitor

D.U.T.

Vin

–10 V

= –10 V

td(on)

Vin

90% 90%

10%

Vout

td(off)

Vout

Monitor

50Ω

90%

10%

Switching Time Test Circuit Waveforms

2SJ506(L), 2SJ506(S)

Package Dimensions

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (L)-(2)

—

0.42 g

6.5 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

1.2 ± 0.3

0.55 ± 0.1

5.5 ± 0.5 1.7 ± 0.5

16.2 ± 0.5

4.7 ± 0.5

5.4 ± 0.5

1.15 ± 0.1

2.29 ± 0.5 2.29 ± 0.5

0.8 ± 0.1

0.55 ± 0.1

3.1 ± 0.5

(0.7)

As of January, 2001

Unit: mm

2SJ506(L), 2SJ506(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(1),(2)

—

Conforms

0.28 g

As of January, 2001

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.7 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(4.9)

(5.3)

2SJ506(L), 2SJ506(S)

Hitachi Code

JEDEC

EIAJ

Mass

(reference value)

DPAK (S)-(3)

—

Conforms

0.28 g

As of January, 2001

Unit: mm

6.5 ± 0.5

5.4 ± 0.5 2.3 ± 0.2

0.55 ± 0.1

0 – 0.25

0.55 ± 0.1

1.5 ± 0.5

5.5 ± 0.5

2.5 ± 0.5

1.15 ± 0.1

0.8 ± 0.1

2.29 ± 0.5

1.2 Max

(5.1)

(0.1)(0.1)

2SJ506(L), 2SJ506(S)

Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

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