APTGT50SK170T
APTGT50SK170T – Rev 0 May, 2005
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Absolute maximum ratings
Symbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1700 V
TC = 25°C 75
IC Continuous Collector Current TC = 80°C 50
ICM Pulsed Collector Current TC = 25°C 100
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 312 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 100A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
0/VBUS NT C1
OUT
Q1
V BUS NT C2
0/VBUS SENSE
G1
E1
NTC2
OUT
OUT
E1
NTC1
VBUS
0/ VB US
SENSE
0/ VB US
SENSE
0/ VB US
G1
VCES = 1700V
IC = 50A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque nc y up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Inter nal thermistor for temperature monitoring
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
Buck chopper
Trench + Field Stop IGBT®
Power Module
APTGT50SK170T
APTGT50SK170T – Rev 0 May, 2005
APT website
–
http:/
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www.advancedpower.com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 250 µA
Tj = 25°C 2.0 2.4
VCE(sat) Collector Emitter Saturation Voltage VGE = 15V
IC = 50A Tj = 125°C 2.4 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 1mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 4400
Coes Output Capacitance 180
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 150
pF
Td(on) Tur n-o n Delay Ti me 370
Tr Rise Time 40
Td(off) Turn-off Delay Time 650
Tf Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10 Ω 180
ns
Td(on) Turn-on Delay Time 400
Tr Rise Time 50
Td(off) Turn-off Delay Time 800
Tf Fall Time 300
ns
Eon Turn-on Switching Energy 16
Eoff Turn-off Switching Energy
Inductive Switching (125°C)
VGE = 15V
VBus = 900V
IC = 50A
RG = 10 Ω
15 mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1700 V
Tj = 25°C 250
IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 500 µA
IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 80°C 50 A
Tj = 25°C 1.8 2.2
VF Diode Forward Voltage IF = 50A Tj = 125°C 1.9 V
Tj = 25°C 385
trr Reverse Recovery Time Tj = 125°C 490 ns
Tj = 25°C 14
Qrr Reverse Recovery Charge
IF = 50A
VR = 900V
di/dt =800A/µs
Tj = 125°C 23 µC
APTGT50SK170T
APTGT50SK170T – Rev 0 May, 2005
APT website
–
http:/
/
www.advancedpower.com 3 - 5
Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
B 25/85 T
25 = 298.15 K 3952 K
−
=
TT
B
R
RT
11
exp
25
85/25
25
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.4
RthJC Junction to Case Diode 0.7
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 3400 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To Heatsink M5 1.5 4.7 N.m
Wt Package Weight 160 g
Package outline (dimensions in mm)
T: Thermistor temperature
RT: Thermistor value at T
APTGT50SK170T
APTGT50SK170T – Rev 0 May, 2005
APT website
–
http:/
/
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Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1 1.5 2 2.5 3 3.5 4
VCE (V)
IC (A)
Output Characteristics
VGE=15V
VGE
=13V
VGE=20V
VGE=9V
0
20
40
60
80
100
012345
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
20
40
60
80
100
5678910111213
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eoff
Er
Er
0
10
20
30
40
50
0 20406080100
IC (A)
E (mJ)
VCE = 900V
VGE = 15V
RG = 10Ω
TJ = 125°C
Eon
Eoff
Er
0
10
20
30
40
50
0 1020304050607080
Gate Resistance (ohms)
E (mJ)
VCE = 900V
VGE =15V
IC = 50A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
25
50
75
100
125
0 400 800 1200 1600 2000
VCE (V)
IC (A)
VGE=15V
TJ=125°C
RG=10Ω
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT50SK170T
APTGT50SK170T – Rev 0 May, 2005
APT website
–
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www.advancedpower.com 5 - 5
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
10
20
30
40
50
60
70
80
90
100
00.511.522.53
VF (V)
IC (A)
hard
switching
ZCS
ZVS
0
5
10
15
20
25
30
0 1020304050607080
IC (A)
Fmax, Operating Frequency (kHz)
VCE=900V
D=50%
RG=10 Ω
TJ=125°C
TC=75°C
Oper ating Frequency vs Collector Current
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
APT re s erves the rig ht to c ha nge , without notice , the s pe cificatio ns and i nfo rmatio n co nta ine d he rein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
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