PACKAGE DIMENSIONS
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
SCHEMATIC
EMITTER
COLLECTOR
0.074 (1.9)
0.008 (0.21)
0.004 (0.11) 0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.024 (0.6)
0.016 (0.4)
0.087 (2.2)
0.071 (1.8)
0.019 (0.5)
0.012 (0.3)
0.276 (7.0)
MIN
0.024 (0.6)
.059 (1.5)
.051 (1.3).118 (3.0)
.102 (2.6)
EMITTER
NOTES:
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
QSB363C
2001 Fairchild Semiconductor Corporation
DS300233 8/2/01 1 OF 5 www.fairchildsemi.com
DESCRIPTION
The QSB363C is a silicon phototransistor encapsulated in a clear transparent T-3/4 package.
FEATURES
• NPN Silicon Phototransistor
• T-3/4 (2mm) Surface Mount Package
• Medium Wide Beam Angle, 24°
• Clear Plastic Package
• Matched Emitters: QEB363 or QEB373
• Tape & Reel Option (See Tape & Reel Specifications)
• Lead Form Options: Gullwing, Yoke, Z-Bend
PARAMETER TEST CONDITIONS SYMBOL MIN. TYP. MAX. UNITS
Peak Sensitivity Wavelength DPS — 880 — nm
Reception Angle 0— ±12 — Deg.
Dark Current VCE = 10 V, Ee = 0 ID— — 100 nA
Collector-Emitter Breakdown IC= 1 mA BVCEO 30 — — V
Emitter-Collector Breakdown IE= 100 µA BVECO 4—— V
On-State Collector Current Ee = 0.5 mW/cm2 IC(on) 0.7 — — mA
VCE = 5 V(5)
Saturation Voltage Ee = 0.5 mW/cm2 VCE (SAT) — — 0.4 V
IC = 0.1 mA(5)
Rise Time VCC = 5 V, RL= 100 1tr—5—
µ
s
Fall Time IC= 0.2 mA tf—5—
µ
s
ELECTRICAL / OPTICAL CHARACTERISTICS (TA=25°C)
NOTES
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Pulse conditions: tp = 100
µ
s, T
=
10 ms.
5. D= 940 nm, GaAs.
Parameter Symbol Rating Unit
Operating Temperature TOPR -40 to +85 °C
Storage Temperature TSTG -40 to +85 °C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C
Collector Emitter Voltage VCE 30 V
Emitter Collector Voltage VEC 5V
Power Dissipation(1) PD100 mW
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
QSB363C
www.fairchildsemi.com 2 OF 5 8/2/01 DS300233
Relative Sensitivity (%)
Wavelength D(nm)
0
20
40
60
80
100
400 500 600 700 800 900 1000 1100
Fig. 5 Spectral Sensitivity
100
90
80
70
60
50
40
30
20
10
0
-25
0 25507585100
Ambient Temperature TA (˚C) Ambient Temperature TA (˚C)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Collector Power
Dissipation (mW)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative Collector Current (%)
Ambient Temperature TA (˚C)
0
20
40
60
80
100
010 20 30 40 50 60 70
120
140
160
V
CE
= 5 V
Ee=1 mW/cm2
7
6
5
4
3
2
1
0
01234
Collector Current I
C
(mA)
Collector Emitter Voltage VCE (V)
Fig. 6 Collector Current vs.
Collector Emitter Voltage
Fig. 4 Collector Current vs.
Irradiance
Collector Current I
C
(mA)
Irradiance Ee (mW/cm2)
0.1 0.2 0.5 12510 20
20
0.2
2
5
10
1
0.5
0.1
V
CE
= 5 V
T
A
= 25˚
Fig. 2 Collector Dark Current vs.
Ambient Temperature
1010
106
107
108
109
2
5
2
5
2
5
2
5
Collector Dark Current (A)
0 25 50 75 100
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
QSB363C
TYPICAL PERFORMANCE CURVES
DS300233 8/2/01 3 OF 5 www.fairchildsemi.com
NOTES: (Applies to all package drawings)
1. Dimensions are in inches (mm).
2. Tolerance of ± .010 (.25) on all non nominal dimensions
unless otherwise specified.
FEATURES
• Three lead forming options: Gull Wing, Yoke and Z-Bend
• Compatible with automatic placement equipment
• Supplied on tape and reel or in bulk packaging
• Compatible with vapor phase reflow solder processes
YOKE LEAD CONFIGURATION
0.074 (1.9)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.118 (3.0)
0.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.043 (1.1)
0.098 (2.5)
0.051 (1.3)
0.141 (3.6)
0.031 (0.8)
ANODE
0.008 (0.2)
0.283 (7.2)
Z-BEND LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.020 (0.5)
0.016 (0.4)
0.080 (2.0)
0.043 (1.1)
0.236 (6.0)
0.220 (5.6)
0.177 (4.5)
0.161 (4.1)
0.031 (0.8)
ANODE
0.127 (3.25)
0.112 (2.85)
GULL WING LEAD CONFIGURATION
0.074 (1.9)
0.106 (2.7)
0.091 (2.3)
0.055 (1.4)
0.087 (2.2)
0.071 (1.8)
0.024 (0.6)
.118 (3.0)
.102 (2.6)
0.166 (4.2)
0.020 (0.51)
0.016 (0.4)
0.078 (2.0)
0.043 (1.1)
0.005 (0.13)
ANODE
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
QSB363C
www.fairchildsemi.com 4 OF 5 8/2/01 DS300233
SUBMINIATURE PLASTIC SILICON
PHOTOTRANSISTOR
QSB363C
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
DS300233 8/2/01 5 OF 5 www.fairchildsemi.com
