PD - 94297 IRF6216 SMPS MOSFET HEXFET(R) Power MOSFET Applications Reset Switch for Active Clamp Reset DC-DC converters VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l -150V RDS(on) max ID 0.240@VGS =-10V -2.2A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units -2.2 -1.9 -19 2.5 0.02 20 7.8 -55 to + 150 A W W/C V V/ns C 300 (1.6mm from case ) Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. Max. Units --- --- 20 50 C/W Notes through are on page 8 www.irf.com 1 02/12/02 IRF6216 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. -150 --- --- -3.0 --- --- --- --- Typ. --- -0.17 --- --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 0.240 VGS = -10V, ID = -1.3A -5.0 V VDS = VGS, ID = -250A -25 VDS = -150V, VGS = 0V A -250 VDS = -120V, VGS = 0V, TJ = 125C -100 VGS = -20V nA 100 VGS = 20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 2.7 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 33 7.2 15 18 15 33 26 1280 220 53 1290 99 220 Max. Units Conditions --- S VDS = -50V, ID = -1.3A 49 ID = -1.3A 11 nC VDS = -120V 23 VGS = -10V, --- VDD = -75V --- ID = -1.3A ns --- RG = 6.5 --- VGS = -10V --- VGS = 0V --- VDS = -25V --- pF = 1.0MHz --- VGS = 0V, VDS = -1.0V, = 1.0MHz --- VGS = 0V, VDS = -120V, = 1.0MHz --- VGS = 0V, VDS = 0V to -120V Avalanche Characteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. Max. Units --- --- 200 -4.0 mJ A Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- -2.2 --- --- -19 --- --- --- --- 80 310 -1.6 120 460 A V nS nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -1.3A, VGS = 0V TJ = 25C, IF = -1.3A di/dt = -100A/s D S www.irf.com IRF6216 100 TOP 10 100 VGS -15V -12V -10V -8.0V -7.0V TOP BOTTOM -I , Drain-to-Source Current (A) BOTTOM 1 0.1 0.1 1 10 -5.0V 1 D 20s PULSE WIDTH 20s PULSE WIDTH T J= 25 C 0.01 10 VGS -15V -12V -10V -8.0V -7.0V -6.0V -5.5V -5.0V T J= 150 0.1 0.1 100 1 C 10 100 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 2.0 1 V DS= -50V 20s PULSE WIDTH 5.0 5.5 6.0 6.5 7.0 7.5 -V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 8.0 (Normalized) TJ = 150 C 10 RDS(on) , Drain-to-Source On Resistance -I D, Drain-to-Source Current (A) TJ = 25 C 0.1 I D = -2.2A 1.5 1.0 0.5 V GS = -10V 0.0 -60 -40 -20 0 20 40 60 TJ , Junction Temperature 80 100 120 140 160 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF6216 10000 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd ID = -1.3A VDS = -120V VDS = -75V VDS = -30V 10 Ciss 1000 -V GS, Gate-to-Source Voltage (V) C, Capacitance(pF) Coss = Cds + Cgd Coss 100 Crss 10 8 6 4 2 0 1 10 100 0 1000 15 20 25 30 35 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 -I D, Drain-to-Source Current (A) 100 -I SD, Reverse Drain Current (A) 10 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) 10 TJ = 150 C TJ = 25 C 1 V GS= 0 V 0.1 0.4 0.6 0.8 1.0 -V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 5 1.2 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1msec 1 10msec 0.1 Tc = 25C Tj = 150C Single Pulse 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF6216 2.5 RD VDS VGS 2.0 D.U.T. RG - VDD -I D, Drain Current (A) + 1.5 VGS Pulse Width 1 s Duty Factor 0.1 % 1.0 Fig 10a. Switching Time Test Circuit 0.5 VDS 90% 0.0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Ambient Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJA ) 100 D = 0.50 0.20 10 Thermal Response 0.10 0.05 P DM 0.02 1 t1 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = 2. Peak T 0.1 0.0001 0.001 0.01 0.1 1 t1/ t 2 J = P DM x Z thJA 10 +T A 100 1000 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF6216 R DS(on) , Drain-to -Source On Resistance ( ) RDS (on) , Drain-to-Source On Resistance () 0.23 0.22 VGS = -10V 0.21 0.20 0.19 0 2 4 6 8 10 12 14 16 1.50 1.00 0.50 ID = -2.2A 0.00 4.5 18 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG -VGS 50K .2F 12V QGS .3F QGD 500 D.U.T. +VDS VG -3.2A VGS 400 IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform L VD S I AS D .U .T RG IA S -20V tp VD D A D R IV E R 0 .01 E AS , Single Pulse Avalanche Energy (mJ) Charge -3mA BOTTOM V (BR)DSS 15V Fig 15a&b. Unclamped Inductive Test circuit and Waveforms -4.0A 300 200 100 0 25 tp 6 ID -1.8A TOP 50 75 100 Starting Tj, Junction Temperature 125 150 ( C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRF6216 SO-8 Package Details D IM D -B - 5 8 E -A - 1 7 2 5 A 6 3 e 6X 5 H 0 .2 5 (.0 1 0 ) 4 M A M e1 K x 4 5 -C - 0 .1 0 (.0 0 4 ) B 8X 0 .2 5 (.0 1 0 ) A1 L 8X 6 C 8X M C A S B S NOTES: 1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 . C O N T R O L L IN G D IM E N S IO N : IN C H . 3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ). 6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E .. M IN M AX .05 32 .06 88 1.3 5 1.75 .00 40 .00 98 0.1 0 0.25 B .01 4 .01 8 0.3 6 0.46 C .00 75 .009 8 0.19 0.25 D .18 9 .196 4.80 4.98 E .15 0 .15 7 3.8 1 3.99 e1 A M ILLIM E T E R S M AX A1 e IN C H E S M IN .05 0 B A S IC 1.27 B A S IC .02 5 B A S IC 0 .635 B A S IC H .22 84 .244 0 K .01 1 .01 9 0.2 8 5.8 0 0.48 6.20 L 0.16 .05 0 0.4 1 1.27 0 8 0 8 R E C O M M E N D E D F O O T P R IN T 0 .7 2 (.0 2 8 ) 8X 6 .4 6 ( .2 5 5 ) 1 .7 8 (.0 7 0 ) 8X 1 .2 7 ( .0 5 0 ) 3X SO-8 Part Marking www.irf.com 7 IRF6216 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . A L L D IM E N S ION S A R E S H O W N IN M ILL IM E TE R S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 25mH Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. RG = 25, IAS = -4.0A. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/02 8 www.irf.com