To our custo mers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
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Rev.4.00 Sep 07, 2005 page 1 of 8
2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1075-0400
(Previous: ADE-208-750B)
Rev.4.00
Sep 07, 2005
Features
• Low on-resistance
RDS =45 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 2 of 8
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 100 V
Gate to source voltage VGSS ±20 V
Drain current ID 20 A
Drain peak current ID(pulse)Note1 80 A
Body-drain diode reverse drain current IDR 20 A
Avalanche current IAP Note3 20 A
Avalanche energy EAR Note3 40 mJ
Channel dissipation Pch Note2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — 10 µA VDS = 100 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V
RDS(on) — 45 60 mΩ I
D = 10 A, VGS = 10 VNote4
Static drain to source on state
resistance RDS(on) — 65 85 mΩ I
D = 10 A, VGS = 4 V Note4
Forward transfer admittance |yfs| 8.5 14 — S ID = 10 A, VDS = 10 V Note4
Input capacitance Ciss — 900 — pF
Output capacitance Coss — 400 — pF
Reverse transfer capacitance Crss — 210 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 15 — ns
Rise time tr — 120 — ns
Turn-off delay time td(off) — 200 — ns
Fall time tf — 150 — ns
ID = 10 A, VGS = 10 V,
RL = 3 Ω
Body–drain diode forward voltage VDF — 0.9 — V IF = 20 A, VGS = 0
Body–drain diode reverse recovery
time trr — 90 — ns
IF = 20 A, VGS = 0
diF/ dt = 50 A/µs
Note: 4. Pulse test
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 3 of 8
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
80
60
40
20
050 100 150 200
100
3
10
1
0.1
0.05
1 2 10 20 100
20
16
12
8
4
012345
0246810
Ta = 25°C
Tc = 75°C
25°C
–25°C
Operation in
this area is
limited by RDS(on)
V
DS = 10 V
Pulse Test
100 µs
1 ms
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
10 µs
20
16
12
8
4
3.5 V
3 V
V
GS
=2.5 V
10 V Pulse Test
6 V
4 V
0.3
500
30
550
200
0.5
500
110 100
250
500
20
50
10
205
2.5
2.0
1.5
1.0
0.5
048
12 16 20
ID = 15 A
5 A
10 A
200
100
V
GS
= 4 V
10 V
Pulse Test
Pulse Test
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 4 of 8
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
250
200
150
100
50
–40 0 40 80 120 160
0
0.1 0.3 1 3 10 30 100
50
20
5
10
1
2
0.5
V
GS
= 4 V
10 V
25°C
Tc = –25°C
75°C
Pulse Test
V
DS
= 10 V
Pulse Test
15 A
5,10 A
15 A
5,10 A
0.1 0.3 1310 30 50 01020304050
2000
10000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
20 40 60 80 100
0
500
50
5
10
2
1
20
200
1000
20
100
10
0.1 0.2 1 210 20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
10
20
50
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 15 A
V
GS
V
DS
V
DD
= 100 V
50 V
25 V
tf
tr
td(on)
td(off)
V
GS
= 10 V,
V
DD
= 30 V
PW = 5 µs, duty < 1 %
V
DD
= 100 V
50 V
25 V
50
500
0.5 50
5000
100
200
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 5 of 8
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
15 V
0
ID
V
DS
I
AP
V
(BR)DSS
L
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
Avalanche Test Circuit Avalanche Waveform
20
16
12
8
4
00.2 0.4 0.6 0.8 1.0
V
GS
= 0, –5 V
10 V
5 V
50
40
30
20
10
25 50 75 100 125 150
0
Pulse Test
I
AP = 20 A
V
DD = 50 V
duty < 0.1 %
Rg > 50 Ω
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) • ch – c
ch – c = 2.5°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 6 of 8
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 30 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50 Ω
90%
10%
tf
Switching Time Test Circuit Switching Time Waveforms
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 7 of 8
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK3150(L), 2SK3150(S)
Rev.4.00 Sep 07, 2005 page 8 of 8
Ordering Information
Part Name Quantity Shipping Container
2SK3150L-E 500 pcs Box (S ack)
2SK3150STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .3.0
