APT6035AVR 600V 16A 0.350W POWER MOS V (R) TO-3 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching * 100% Avalanche Tested * Lower Leakage * Popular TO-3 Package D G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT6035AVR UNIT 600 Volts Drain-Source Voltage 16 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 200 Watts Linear Derating Factor 1.6 W/C VGSM PD TJ,TSTG 64 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 16 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 Volts 16 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.350 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Ohms A 250 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) UNIT 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 050-5824 Rev C 9-2001 Symbol DYNAMIC CHARACTERISTICS Symbol APT6035AVR Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 3450 4140 Coss Output Capacitance VDS = 25V 403 565 Reverse Transfer Capacitance f = 1 MHz 155 235 Crss Qg Total Gate Charge Qgs 3 VGS = 10V 140 210 VDD = 0.5 VDSS 19 30 ID = ID[Cont.] @ 25C 68 100 Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr VGS = 15V 12 24 VDD = 0.5 VDSS 12 24 ID = ID[Cont.] @ 25C 40 60 RG = 1.6 8 16 TYP MAX Rise Time td(off) Turn-off Delay Time tf Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS ISM VSD Characteristic / Test Conditions MIN 16 Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) 64 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = -ID[Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) UNIT Amps Volts 450 ns 8 C THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case RJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% TYP MAX 0.62 30 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 9.45mH, R = 25, Peak I = 16A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.2 0.1 0.05 0.01 0.005 0.001 10-5 0.1 0.05 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5824 Rev C 9-2001 0.7 0.5 SINGLE PULSE 10-4 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION UNIT C/W APT6035AVR 50 6.5V VGS=7V, 10V & 15V 40 6V 30 5.5V 20 5V 10 ID, DRAIN CURRENT (AMPERES) VGS=10V & 15V 40 6V 30 5.5V 20 5V 10 4.5V 4.5V 0 0 ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 40 30 20 TJ = +125C 10 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 12 8 4 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 10 20 30 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 1.4 1.15 16 0 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 50 100 150 200 250 300 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 7V 6.5V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5824 Rev C 9-2001 ID, DRAIN CURRENT (AMPERES) 50 APT6035AVR 15,000 10s 10,000 OPERATION HERE LIMITED BY RDS (ON) 100s C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 70 10 1ms 5 10ms 1 TC =+25C TJ =+150C SINGLE PULSE 0.5 100ms IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 500 Crss .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 I = I [Cont.] D VDS=120V VDS=300V 12 VDS=480V 8 4 0 Coss 1,000 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 16 Ciss DC 0.1 D 5,000 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 50 TJ =+150C TJ =+25C 10 5 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-3 (TO-204AE) Package Outline Seating Plane 3.84 (.151) 4.09 (.161) (2-Places) Gate 16.64 (.655) 17.15 (.675) Source Drain (Case) 22.23 (.875) Max. 29.90 (1.177) 30.40 (1.197) 1.47 (.058) 1.60 (.063) (2-Places) 050-5824 Rev C 9-2001 6.35 (.250) 9.15 (.360) 38.61 (1.52) 39.12 (1.54) 1.52 (.060) 3.43 (.135) 5.21 (.205) 5.72 (.225) 11.18 (.440) 12.19 (.480) 10.67 (.420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) Dimensions in Millimeters and (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095 5,262,336 5,528,058