IPB034N03LG - Infineon Technologies

Type IPP034N03L G

IPB034N03L G

!"#$%!&™3 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC1) for target applications

• N-channel, logic level

• Excellent gate charge x RDS(on) product (FOM)

• Very low on-resistance RDS(on)

• Avalanche rated

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current IDVGS=10 V, TC=25 °C 80 A

VGS=10 V, TC=100 °C 80

VGS=4.5 V, TC=25 °C 80

VGS=4.5 V,

TC=100 °C 77

Pulsed drain current2) ID,pulse TC=25 °C 400

Avalanche current, single pulse3) IAS TC=25 °C 80

Avalanche energy, single pulse EAS ID=80 A, RGS=25 W70 mJ

Reverse diode dv/dtdv/dtID=80 A, VDS=24 V,

di/dt=200 A/µs,

Tj,max=175 °C 6 kV/µs

Gate source voltage VGS ±20 V

Value

1) J-STD20 and JESD22

VDS 30 V

RDS(on),max 3.4 mW

ID80 A

Product Summary

Type IPP034N03L G IPB034N03L G

Package PG-TO220-3-1 PG-TO263-3

Marking 034N03L 034N03L

Rev. 2.0 page 1 2010-02-19

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IPP034N03L G

IPB034N03L G

Maximum ratings, at Tj=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Power dissipation Ptot TC=25 °C 94 W

Operating and storage temperature Tj,Tstg -55 ... 175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case RthJC - - 1.6 K/W

SMD version, device on PCB RthJA minimal footprint - - 62

6 cm² cooling area4) - - 40

Electrical characteristics, at Tj=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 30 - - V

Gate threshold voltage VGS(th) VDS=VGS,ID=250 µA 1 - 2.2

Zero gate voltage drain current IDSS VDS=30 V, VGS=0 V,

Tj=25 °C - 0.1 1 µA

VDS=30 V, VGS=0 V,

Tj=125 °C - 10 100

Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 10 100 nA

RDS(on) VGS=4.5 V, ID=30 A - 3.8 4.7 mW

VGS=10 V, ID=30 A - 2.8 3.4

Gate resistance RG- 1.6 - W

Transconductance gfs |VDS|>2|ID|RDS(on)max,

ID=30 A 50 100 - S

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5) Measured from drain tab to source pin

3) See figure 13 for more detailed information

Value

Values

2) See figure 3 for more detailed information

Drain-source on-state resistance5)

Rev. 2.0 page 2 2010-02-19

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IPP034N03L G

IPB034N03L G

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

Input capacitance Ciss - 4000 5300 pF

Output capacitance Coss - 1400 1900

Reverse transfer capacitance Crss - 81 -

Turn-on delay time td(on) - 9.2 - ns

Rise time tr- 6.4 -

Turn-off delay time td(off) - 35 -

Fall time tf- 5.4 -

Gate Charge Characteristics

Gate to source charge Qgs - 12 - nC

Gate charge at threshold Qg(th) - 6.3 -

Gate to drain charge Qgd - 5.6 -

Switching charge Qsw - 11 -

Gate charge total Qg- 25 -

Gate plateau voltage Vplateau - 2.9 - V

Gate charge total QgVDD=15 V, ID=30 A,

VGS=0 to 10 V - 51 -

Gate charge total, sync. FET Qg(sync) VDS=0.1 V,

VGS=0 to 4.5 V - 21 - nC

Output charge Qoss VDD=15 V, VGS=0 V - 37 -

Reverse Diode

Diode continuous forward current IS- - 80 A

Diode pulse current IS,pulse - - 320

Diode forward voltage VSD VGS=0 V, IF=30 A,

Tj=25 °C - 0.83 1.1 V

Reverse recovery charge Qrr VR=15 V, IF=IS,

diF/dt=400 A/µs - - 20 nC

6) See figure 16 for gate charge parameter definition

TC=25 °C

Values

VGS=0 V, VDS=15 V,

f=1 MHz

VDD=15 V, VGS=10 V,

ID=30 A, RG=1.6 W

VDD=15 V, ID=30 A,

VGS=0 to 4.5 V

Rev. 2.0 page 3 2010-02-19

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IPP034N03L G

IPB034N03L G

1 Power dissipation 2 Drain current

Ptot=f(TC)ID=f(TC); VGS!10 V

3 Safe operating area 4 Max. transient thermal impedance

ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)

parameter: tpparameter: D=tp/T

1 µs

10 µs

100 µs

1 ms

10 ms

102

101

100

10-1

103

102

101

100

10-1

VDS [V]

ID[A]

limited by on-state

resistance

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

100

10-1

10-2

10-3

10-4

10-5

10-6

0.01

0.1

0 0 0 0 0 0 1

tp[s]

ZthJC [K/W]

100

0 50 100 150 200

TC[°C]

Ptot [W]

100

0 50 100 150 200

TC[°C]

ID[A]

Rev. 2.0 page 4 2010-02-19

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IPP034N03L G

IPB034N03L G

5 Typ. output characteristics 6 Typ. drain-source on resistance

ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C

parameter: VGS parameter: VGS

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C

parameter: Tj

3 V

3.2 V

3.5 V

4 V

4.5 V 5 V

10 V

11.5 V

0 20 40 60 80 100

ID[A]

RDS(on) [mW

25 °C

175 °C

120

160

012345

VGS [V]

ID[A]

120

160

0 20 40 60 80 100

ID[A]

gfs [S]

2.8 V

3 V

3.2 V

3.5 V

4 V

4.5 V

5 V

10 V

120

160

0 1 2 3

VDS [V]

ID[A]

Rev. 2.0 page 5 2010-02-19

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IPP034N03L G

IPB034N03L G

9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on)=f(Tj); ID=30 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS;ID=250 µA

11 Typ. capacitances 12 Forward characteristics of reverse diode

C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)

parameter: Tj

typ

98 %

-60 -20 20 60 100 140 180

Tj[°C]

RDS(on) [mW

0.5

1.5

2.5

-60 -20 20 60 100 140 180

Tj[°C]

VGS(th) [V]

Ciss

Coss

Crss

104

103

102

10110

100

1000

10000

0 5 10 15 20 25 30

VDS [V]

C[pF]

25 °C

175 °C 25 °C, 98%

175 °C, 98%

100

1000

0.0 0.5 1.0 1.5 2.0

VSD [V]

IF[A]

Rev. 2.0 page 6 2010-02-19

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IPP034N03L G

IPB034N03L G

13 Avalanche characteristics 14 Typ. gate charge

IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=30 A pulsed

parameter: Tj(start) parameter: VDD

15 Drain-source breakdown voltage 16 Gate charge waveforms

VBR(DSS)=f(Tj); ID=1 mA

-60 -20 20 60 100 140 180

Tj[°C]

VBR(DSS) [V]

gate

gs(th)

g(th)

25 °C

100 °C

150 °C

103

102

101

100

10-1

100

tAV [µs]

IAV [A]

6 V

15 V

24 V

0 10 20 30 40 50 60

Qgate [nC]

VGS [V]

Rev. 2.0 page 7 2010-02-19

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IPP034N03L G

IPB034N03L G

Package Outline PG-TO220-3-1

Footprint: Packaging:

Rev. 2.0 page 8 2010-02-19

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IPP034N03L G

IPB034N03L G

Package Outline PG-TO263-3

Rev. 2.0 page 9 2010-02-19

IPP034N03L G

IPB034N03L G

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