n Outline Drawing IGBT MODULE ( N series ) n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Improved FWD Characteristic * Minimized Internal Stray Inductance * Overcurrent Limiting Function (4~5 Times Rated Current) n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics n Equivalent Circuit * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 20 400 800 400 800 3100 +150 -40 +125 2500 3.5 4.5 1.7 Units V V A W C C V Nm Note: *1:Recommendable Value; 2.5 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 4.5 Nm (M6) *3:Recommendable Value; 1.3 1.7 Nm (M4) * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE= 20V VGE=20V IC=400mA VGE=15V IC=400A VGE=0V VCE=10V f=1MHz VCC=600V IC=400A VGE= 15V RG=1.8 IF=400A VGE=0V IF=400A Min. Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. 4.5 64000 23200 20640 0.75 0.25 1.05 0.35 Max. 4.0 60 7.5 3.3 Units mA A V V pF 1.2 0.6 1.5 0.5 3.0 350 s V ns * Thermal Characteristics Items Thermal Resistance http://store.iiic.cc/ Typ. 0.0125 Max. 0.04 0.12 Units C/W Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage T j=125C T j=25C 1000 1000 V GE =20V, 15V, 12V, 10V V GE =20V, 15V, 12V, 10V 800 C C [A] [A] 800 600 Collector current : I Collector current : I 600 400 400 8V 8V 200 200 0 0 0 1 2 3 4 5 0 3 4 5 Collector-Emitter voltage : V CE [V] Collector-Emitter vs. Gate-Emitter voltage Collector-Emitter vs. Gate-Emitter voltage T j=25C T j=125C 10 [V] [V] 8 CE 8 Collector-Emitter voltage V CE Collector-Emitter voltage :V 2 Collector-Emitter voltage : V CE [V] 10 6 4 IC= 800A 400A 2 200A 6 4 IC= 800A 400A 200A 2 0 0 0 5 10 15 20 25 0 Gate-Emitter voltage : V G E [V] 5 10 15 20 25 Gate-Emitter voltage : V G E [V] Switching time vs. Collector current Switching time vs. Collector current V CC =600V, R G =1.8 , V GE 15V, T j=25C V CC =600V, R G =1.8 , V GE =15V, Tj=125C t off 1000 tf [nsec] [nsec] t off t on 1000 t on tr on, t r, t off, t f tf on, t r, t off, t f tr 100 Switching time : t Switching time : t 1 10 100 10 0 200 400 600 800 0 200 400 600 Collector current : IC [A] Collector current : I C [A] http://store.iiic.cc/ 800 Switching time vs. R G Dynamic input characteristics T j=25C V CC =600V, I C =400A, V GE =15V, T j=25C 1000 25 V CC =400V t off 600V 800 20 1000 800V Collector-Emitter voltage : V Switching time : t on, t r, t off, t f CE [nsec] [V] t on tr tf 100 600 15 400 10 200 5 0 1 0 5000 10 0 1000 Gate resistance : R G [ ] 2000 3000 Gate charge : Q G 4000 [nC] Forward current vs. Forward voltage Reverse recovery characteristics V GE = O V t rr, I rr vs. I F 1000 25C [A] rr Reverse recovery current : I 400 200 t rr 125C I rr 25C :t [A] F Forward current : I 600 rr [nsec] I rr 125C 800 t rr 25C Reverse recovery time T j=125C 100 0 0 1 2 3 4 5 0 200 Forward voltage : V F [V] 400 600 800 Forward current : I F [A] Reversed biased safe operating area Transient thermal resistance +V GE =15V, -V GE <15V, T j<125C, R G >1.8 Diode [A] 0,1 C 3000 SCSOA IGBT Collector current : I Thermal resistance : R th(j-c) [C/W] 4000 0,01 (non-repetitive pulse) 2000 1000 RBSOA (Repetitive pulse) 0,001 0,001 0 0,01 0,1 1 Pulse width : PW [sec] 0 200 400 600 800 1000 Collector-Emitter voltage : V (CE) [V] http://store.iiic.cc/ 1200 Switching loss vs. Collector current Capacitance vs. Collector-Emitter voltage V CC=600V, R G =1.8 , V GE =15V T j=25C E off 125C 125 Switching loss : E E on 125C 50 E rr 125C E on 25C C ies 10 Capacitance : C E off 25C 75 25 100 ies , 100 C oes , C res [nF] 150 on, E off, E rr [mJ/cycle] 175 C oes C res 1 E rr 25C 0 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 Collector-Emitter Voltage : V CE [V] Collector Current : I C [A] Fuji Electric GmbH Fuji Electric (UK) Ltd. Lyoner Strae 26 Commonwealth House 2 Chalkhill Road Hammersmith D-60528 Frankfurt/M London W6 8DW, UK Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708-Dallas, TX 75370 Phone (972) 233-1589 Fax (972) 233-0481 www.collmer.com http://store.iiic.cc/ 35