LTC5530
1
5530f
APPLICATIO S
U
FEATURES
TYPICAL APPLICATIO
U
DESCRIPTIO
U
■
802.11a, 802.11b, 802.11g, 802.15, 802.16
■
Multimode Mobile Phone Products
■
Optical Data Links
■
Wireless Data Modems
■
Wireless and Cable Infrastructure
■
RF Power Alarm
■
Envelope Detector
■
Temperature Compensated Internal Schottky
Diode RF Detector
■
Wide Input Frequency Range: 300MHz to 7GHz*
■
Wide Input Power Range: –32dBm to 10dBm
■
Buffered Detector Output with External Gain Control
■
Low Starting Voltage: 120mV ±35mV for Gain = 2X
■
Wide V
CC
Range of 2.7V to 6V
■
Low Operating Current: 500µA
■
Low Shutdown Current: <2µA
■
Available in a Low Profile (1mm) SOT-23 Package
Precision 300MHz to 7GHz
RF Detector with Shutdown
and Gain Adjustment
The LTC
®
5530 is an RF power detector for RF applications
operating in the 300MHz to 7GHz range. A temperature
compensated Schottky diode peak detector and buffer
amplifier are combined in a small ThinSOT
TM
package. The
supply voltage range is optimized for operation from a
single lithium-ion cell or 3xNiMH.
The RF input voltage is peak detected using an on-chip
Schottky diode. The detected voltage is buffered and
supplied to the V
OUT
pin. The output buffer gain is set via
external resistors. A power saving shutdown mode re-
duces current to less than 2µA.
The LTC5530 operates with input power levels from
–32dBm to 10dBm.
, LTC and LT are registered trademarks of Linear Technology Corporation.
300MHz to 7GHz RF Power Detector
LTC5530
1
2
3
6
5
4
100pF 0.1µF
V
CC
V
CC
V
OUT
RF
IN
GND
SHDN
33pF
5530 TA01
RF
INPUT
V
M
DISABLE ENABLE
R
A
R
B
Output Voltage vs RF Input Power
ThinSOT is a trademark of Linear Technology Corporation.
*Higher frequency operation is achievable with reduced performance. Consult factory for more
information.
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 TA02
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
V
CC
= 3.6V
T
A
= 25°C
GAIN = 2
300MHz
1000MHz
2000MHz
3000MHz
5000MHz
6000MHz
7000MHz
4000MHz
LTC5530
2
5530f
V
CC
, V
OUT
, SHDN, V
M......................................
–0.3V to 6.5V
RF
IN
Voltage ......................................(V
CC
± 1.5V) to 7V
RF
IN
Power (RMS) .............................................. 12dBm
I
VOUT
...................................................................... 5mA
Operating Temperature Range (Note 2) .. – 40°C to 85°C
Maximum Junction Temperature ......................... 125°C
Storage Temperature Range ................ – 65°C to 150°C
Lead Temperature (Soldering, 10 sec).................. 300°C
ABSOLUTE AXI U RATI GS
W
WW
U
PACKAGE/ORDER I FOR ATIO
UUW
(Note 1)
ELECTRICAL CHARACTERISTICS
The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off,
RA = RB = 1k, SHDN = HI unless otherwise noted.
PARAMETER CONDITIONS MIN TYP MAX UNITS
V
CC
Operating Voltage ●2.7 6 V
I
VCC
Operating Current I
VOUT
= 0mA ●0.5 0.7 mA
I
VCC
Shutdown Current SHDN = LO ●0.01 2 µA
V
OUT
(No RF Input) R
LOAD
= 2k ●85 100 to 140 155 mV
SHDN = LO 1 mV
V
OUT
Output Current V
OUT
= 1.75V, V
CC
= 2.7V, ∆V
OUT
< 10mV ●24 mA
V
OUT
Enable Time SHDN = LO to HI, C
LOAD
= 33pF, R
LOAD
= 2k ●820 µs
V
OUT
Bandwidth C
LOAD
= 33pF, R
LOAD
= 2k (Note 4) 2 MHz
V
OUT
Load Capacitance (Notes 6, 7) ●33 pF
V
OUT
Slew Rate V
RFIN
= 1V Step, C
LOAD
= 33pF, R
LOAD
= 2k (Note 3) 3 V/µs
V
OUT
Noise V
CC
= 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 1 mV
P-P
V
M
Voltage Range ●0V
CC
– 1.8V V
V
M
Input Current ●–0.5 0.5 µA
SHDN Voltage LO, Chip Disabled V
CC
= 2.7V to 6V ●0.35 V
SHDN Voltage HI, Chip Enabled V
CC
= 2.7V to 6V ●1.4 V
SHDN Input Current SHDN = 3.6V ●22 36 µA
RF
IN
Input Frequency Range (Note 8) 300 to 7000 MHz
RF
IN
Input Power Range RF Frequency = 300MHz to 7GHz (Note 5, 6) V
CC
= 2.7V to 6V –32 to 10 dBm
RF
IN
AC Input Resistance F = 1000MHz, Pin = –25dBm 220 Ω
RF
IN
Input Shunt Capacitance F = 1000MHz, Pin = –25dBm 0.65 pF
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ORDER PART
NUMBER
S6 PART
MARKING
T
JMAX
= 125°C, θ
JA
= 250°C/W LBDX
LTC5530ES6
RF
IN
1
GND 2
SHDN 3
6 V
CC
5 V
OUT
4 V
M
TOP VIEW
S6 PACKAGE
6-LEAD PLASTIC TSOT-23
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 3: The rise time at V
OUT
is measured between 1.3V and 2.3V.
Note 4: Bandwidth is calculated based on the 10% to 90% rise time
equation: BW = 0.35/rise time.
Note 5: RF performance is tested at 1800MHz
Note 6: Guaranteed by design.
Note 7: Capacitive loading greater than this value may result in circuit
instability.
Note 8: Higher frequency operation is achievable with reduced
performance. Consult factory for more information.
LTC5530
3
5530f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
VOUT vs RF Input Power and VCC
1000MHz
Typical Detector Characteristics,
300MHz Typical Detector Characteristics,
1000MHz
Output Voltage vs Supply Voltage
(RF Input Signal Off) Supply Current vs Supply Voltage
(RF Input Signal Off)
SUPPLY VOLTAGE V
CC
(V)
2.5
130
125
120
115
110 5.0
5530 G01
4.53.5 5.54.03.0 6.0
V
OUT
OUTPUT VOLTAGE (mV)
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
GAIN = 2
SUPPLY VOLTAGE V
CC
(V)
2.5
500
480
460
440
420 5.0
5530 G02
4.53.5 5.54.03.0 6.0
SUPPLY CURRENT (µA)
T
A
= 85°C
T
A
= 25°C
T
A
= –40°C
GAIN = 2
V
OUT
OUTPUT VOLTAGE (mV)
5600
4800
4000
3200
2400
1600
800
0
RF INPUT POWER (dBm)
5530 G03
–32 –28 –24 –20 –16 –12 –8 –4 0 4 128
T
A
= 25°C
GAIN = 2
V
CC
= 3V
V
CC
= 4V
V
CC
= 5V
V
CC
= 6V
VOUT OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G04
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
VCC = 3.6V
GAIN =2
TA = –40°C
TA = 85°C
TA = 25°C
5530 G05
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
V
CC
= 3.6V
GAIN =2
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
Typical Detector Characteristics,
4000MHz
Typical Detector Characteristics,
2000MHz
Typical Detector Characteristics,
3000MHz
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G06
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
V
CC
= 3.6V
GAIN = 2
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G07
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
V
CC
= 3.6V
GAIN = 2
T
A
= 25°C
T
A
= 85°C
T
A
= –40°C
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G08
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 2
T
A
= 25°C
Typical Detector Characteristics,
5000MHz
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G09
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 2
T
A
= 25°C
LTC5530
4
5530f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
Typical Detector Characteristics,
6000MHz Typical Detector Characteristics,
7000MHz
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G10
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 2
T
A
= 25°C
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G11
–32 –28 –24 –20 –16 –12 –8 –4 0 4 8
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 2
T
A
= 25°C
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G12
–32 –28 –24 –20 –16 –12 –8 –4 0 4
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 4
T
A
= 25°C
V
OUT
OUTPUT VOLTAGE (mV)
3600
3200
2800
2400
2000
1600
1200
800
400
0
RF INPUT POWER (dBm)
5530 G13
–32 –28 –24 –20 –16 –12 –8 –4 0 4
T
A
= –40°C
T
A
= 85°C
V
CC
= 3.6V
GAIN = 4
T
A
= 25°C
Typical Detector Characteristics,
300MHz Typical Detector Characteristics,
1000MHz
LTC5530
5
5530f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
VOUT Slope vs RF Input Power
3000MHz VOUT Slope vs RF Input Power
4000MHz VOUT Slope vs RF Input Power
5000MHz
VOUT Slope vs RF Input Power
6000MHz VOUT Slope vs RF Input Power
7000MHz
VOUT Slope vs RF Input Power
1000MHz VOUT Slope vs RF Input Power
2000MHz
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G15
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G16
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
VOUT Slope vs RF Input Power
300MHz
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G14
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G17
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G18
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G19
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G20
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
RF INPUT POWER (dBm)
–30
V
OUT
SLOPE (mV/dB)
1000
100
10
1–25 5
5530 G21
–20 –15 –10 0–5
T
A
= –40°C
T
A
= 85°C
T
A
= 25°C
V
CC
= 3.6V
GAIN = 2
LTC5530
6
5530f
TYPICAL PERFOR A CE CHARACTERISTICS
UW
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) (Ω)(Ω)
0.30 290.45 –136.22
0.50 234.41 –162.54
0.70 178.25 –170.53
0.90 137.31 –159.89
1.10 109.17 –147.57
1.30 86.30 –136.18
1.50 68.65 –121.74
1.70 57.48 –107.60
1.90 49.79 –96.72
2.10 43.56 –86.70
2.30 38.67 –77.91
2.50 34.82 –70.13
2.70 31.68 –62.86
2.90 29.13 –56.01
3.10 27.17 –49.83
3.30 25.73 –44.24
3.50 24.56 –39.74
3.70 23.18 –35.35
3.90 22.31 –30.62
4.10 20.73 –26.88
4.30 19.88 –22.31
4.50 19.40 –18.23
4.70 19.05 –14.25
4.90 19.08 –10.21
5.10 19.55 –6.30
5.30 20.85 –2.84
5.50 21.94 –1.49
5.70 20.60 –0.07
5.90 19.29 2.99
6.10 18.69 6.61
6.30 18.53 10.39
6.50 18.74 14.35
6.70 19.79 17.91
6.90 19.75 20.77
7.00 19.99 22.47
5508 TA03
5530 TA03
S11 Forward Reflection
Impedance
LTC5530
7
5530f
S11 Forward Reflection
Impedance
0.3000GHz-7.000GHz
RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C)
FREQUENCY RESISTANCE REACTANCE
(GHz) (Ω)(Ω)
0.30 216.45 –76.47
0.50 190.63 –98.28
0.70 161.98 –112.03
0.90 133.17 –111.53
1.10 113.08 –109.05
1.30 94.55 –107.08
1.50 75.33 –98.50
1.70 63.52 –88.19
1.90 55.19 –80.05
2.10 48.64 –72.23
2.30 43.73 –64.81
2.50 39.71 –58.31
2.70 36.47 –52.27
2.90 33.69 –46.77
3.10 31.61 –41.25
3.30 29.78 –36.61
3.50 28.27 –32.39
3.70 26.63 –28.12
3.90 26.12 –23.97
4.10 24.20 –20.75
4.30 23.28 –16.69
4.50 22.60 –12.77
4.70 22.21 –9.08
4.90 22.15 –5.24
5.10 22.61 –1.58
5.30 23.90 1.53
5.50 24.97 2.62
5.70 23.51 4.00
5.90 22.25 6.94
6.10 21.57 10.62
6.30 21.43 14.02
6.50 21.69 17.77
6.70 22.68 21.24
6.90 22.81 24.21
7.00 23.07 25.56
5508 TA04
5530 TA04
TYPICAL PERFOR A CE CHARACTERISTICS
UW
LTC5530
8
5530f
BLOCK DIAGRA
W
UU
U
PI FU CTIO S
RF
IN
(Pin 1): RF Input Voltage. Referenced to V
CC
. A
coupling capacitor must be used to connect to the RF
signal source. The frequency range is 300MHz to 7GHz.
This pin has an internal 500Ω termination, an internal
Schottky diode detector and a peak detector capacitor.
GND (Pin 2): Ground.
SHDN (Pin 3): Shutdown Input. A logic low on the SHDN
pin places the part in shutdown mode. A logic high enables
the part. SHDN has an internal 160k pulldown resistor to
ensure that the part is in shutdown when no input is
applied. In shutdown V
OUT
is connected to ground via a
280Ω resistor.
V
M
(Pin 4): Negative Input to Buffer Amplifier.
V
OUT
(Pin 5): Detector Output.
V
CC
(Pin 6): Power Supply Voltage, 2.7V to 6V. V
CC
should
be bypassed appropriately with ceramic capacitors.
–
+
–
+
5530 BD
25pF
V
OUT
GND 2
5
V
M
6
BUFFER
500Ω
500Ω
RF DET
50µA50µA40k
BIAS
RF
SOURCE
RF
IN
V
CC
1
31k
24k
SHUTDOWN
SD
SD
SD
SHDN
160k
180Ω
100Ω
3
4
LTC5530
9
5530f
APPLICATIO S I FOR ATIO
WUUU
Operation
The LTC5530 RF detector integrates several functions to
provide RF power detection over frequencies ranging from
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
ode peak detector and level shift amplifier to convert the RF
input signal to DC and a delay circuit to avoid voltage tran-
sients at V
OUT
when powering up. The LTC5530 has both
shutdown and gain setting capabilities.
Buffer Amplifier
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The negative terminal V
M
is brought
out to a pin for gain selection. External resistors connected
between V
OUT
and V
M
(R
A
) and V
M
to ground (R
B
) will set
the amplifier gain.
GAIN R
R
A
B
=+1
The amplifier is unity gain stable; however a minimum gain
of two is recommended to improve low output voltage
accuracy. The amplifier bandwidth is 2MHz for a gain of 2.
For increased gain applications, the bandwidth is reduced
according to the formula:
BANDWIDTH MHz
GAIN MHz R
RR
B
AB
== +
44
() •()
A capacitor can be placed across the feedback resistor RA
to shape the frequency response. In addition the amplifier
can be used as a comparator. V
M
can be connected to a
reference voltage. When the internal detector voltage
(which is connected to the positive input of the buffer
amplifier) exceeds the external voltage of V
M
, V
OUT
will
switch high.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
Shutdown
The part is in shutdown mode when SHDN is low. The
supply current is reduced to < 2µA and V
OUT
is shorted to
ground via a 280Ω resistor. When SHDN is asserted high,
the part is enabled after about 8µs.
RF
IN
GND
SHDN
V
CC
V
OUT
V
M
LTC5530ES6
1
2
3
6
5
4
C4
39pF
RF
IN
R1
(OPT)
C2
100pF
C1
0.1µF
C3
(OPT)
V
CC
2.7V TO 6V
V
OUT
5530 DB
SHDN
V
CC
R2
22k
R3
10k
R4
10k
Demo Board Schematic
LTC5530
10
5530f
RF
IN
GND
SHDN
V
CC
V
OUT
V
M
LTC5530ES6
1
2
3
6
5
4
0.1µF
5530 F01
Li-Ion
CELL BAND
PCS BAND
VPC
MOBILE
PHONE
DSP
DIPLEXER
Tx PA
MODULE
R1
200Ω
1%
C1
0.5pF
±0.05pF
BSE
ENABLEDISABLE R2
R3
APPLICATIO S I FOR ATIO
WUUU
Figure 1. Mobile Phone Tx Power Control Application with a Capacitive Tap
Applications
The LTC5530 can be used as a self-standing signal strength
measuring receiver for a wide range of input signals from
–32dBm to 10dBm for frequencies from 300MHz to 7GHz.
Operation at higher frequencies is achievable. Consult
factory for more information.
The LTC5530 can be used as a demodulator for AM and
ASK modulated signals with data rates up to 2MHz.
Depending on specific application needs, the RSSI output
can be split between two branches, providing AC-coupled
data (or audio) output and DC-coupled RSSI output for
signal strength measurements and AGC.
The LTC5530 can be used for RF power detection and
control. Figure 1 is an example of transmitter power
control, using the LTC5530 with a capacitive tap to the
power amplifier. A 0.5pF capacitor (C1) followed by a
200Ω resistor (R1) forms a coupling circuit with about
20dB loss at 900MHz referenced to the LTC5530 RF input
pin. In the actual product implementation, component
values for the capacitive tap may be different depending on
parts placement, PCB parasitics and parameters of the
antenna.
LTC5530
11
5530f
PACKAGE DESCRIPTIO
U
S6 Package
6-Lead Plastic TSOT-23
(Reference LTC DWG # 05-08-1636)
1.50 – 1.75
(NOTE 4)
2.80 BSC
0.30 – 0.45
6 PLCS (NOTE 3)
DATUM ‘A’
0.09 – 0.20
(NOTE 3)
S6 TSOT-23 0302
2.90 BSC
(NOTE 4)
0.95 BSC
1.90 BSC
0.80 – 0.90
1.00 MAX 0.01 – 0.10
0.20 BSC
0.30 – 0.50 REF
PIN ONE ID
NOTE:
1. DIMENSIONS ARE IN MILLIMETERS
2. DRAWING NOT TO SCALE
3. DIMENSIONS ARE INCLUSIVE OF PLATING
4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR
5. MOLD FLASH SHALL NOT EXCEED 0.254mm
6. JEDEC PACKAGE REFERENCE IS MO-193
3.85 MAX
0.62
MAX 0.95
REF
RECOMMENDED SOLDER PAD LAYOUT
PER IPC CALCULATOR
1.4 MIN
2.62 REF
1.22 REF
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
LTC5530
12
5530f
LT/TP 0304 1K • PRINTED IN USA
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900
●
FAX: (408) 434-0507
●
www.linear.com
LINEAR TECHNOLOGY CORPORATION 2004
RELATED PARTS
PART NUMBER DESCRIPTION COMMENTS
Infrastructure
LT5511 High Linearity Upconverting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
LT5512 DC-3GHz High Signal Level Downconverting Mixer DC to 3GHz, 21dBm IIP3, Integrated LO Buffer
LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator 20dBm IIP3, Integrated LO Quadrature Generator
LT5516 0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator 21.5dBm IIP3, Integrated LO Quadrature Generator
LT5517 40MHz to 900MHz Direct Conversion Quadrature Demodulator 21dBm IIP3, Integrated LO Quadrature Generator
LT5519 0.7GHz to 1.4GHz High Linearity Upconverting Mixer 17.1dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5520 1.3GHz to 2.3GHz High Linearity Upconverting Mixer 15.9dBm IIP3, 50Ω Single Ended RF and LO Ports
LT5522 600MHz to 2.7GHz High Linearity Downconverting Mixer 4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC®5505 300MHz to 3GHz RF Power Detectors LTC5505-1: –28dBm to 18dBm Range,
LTC5505-2: –32dBm to 12dBm Range,
Temperature Compensated, 2.7V to 6V Supply
LTC5507 100kHz to 1000MHz RF Power Detector –34dBm to 14dBm Range, Temperature Compensated,
2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector –32dBm to 12dBm Range, Temperature Compensated,
SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control and Shutdown
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision V
OUT
Offset Control, Adjustable Gain and Offset
RF Building Blocks
LT5500 1.8GHz to 2.7GHz Receiver Front End 1.8V to 5.25V Supply, Dual-Gain LNA, Mixer, LO Buffer
LT5502 400MHz Quadrature IF Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and 1.8V to 5.25V Supply, Four-Step RF Power Control,
Upconverting Mixer 120MHz Modulation Bandwidth
LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
LT5546 500MHz Ouadrature IF Demodulator with 17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V
VGA and 17MHz Baseband Bandwidth Supply, –7dB to 56dB Linear Power Gain
RF Power Controllers
LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones
LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones
LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones
LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
450kHz Loop BW
LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range,
250kHz Loop BW
LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones, 250kHz Loop BW
