PD - 91838E RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) IRHNA57260 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNA57260 100K Rads (Si) RDS(on) 0.043 ID 55A IRHNA53260 300K Rads (Si) 0.043 55A IRHNA54260 600K Rads (Si) 0.043 55A 0.048 55A IRHNA58260 1000K Rads (Si) International Rectifier's R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD-2 Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 55 35 220 300 2.4 20 380 55 30 9.2 -55 to 150 A W W/C V mJ A mJ V/ns o C 300 (for 5s) 3.3 (Typical) g For footnotes refer to the last page www.irf.com 1 01/30/03 IRHNA57260 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter Min Drain-to-Source Breakdown Voltage 200 -- -- V VGS = 0V, ID = 1.0mA -- 0.22 -- V/C Reference to 25C, ID = 1.0mA -- -- 0.043 2.0 40 -- -- -- -- -- -- 4.0 -- 10 25 V S( ) BV DSS/T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Test Conditions VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 55A VDS = 100V BVDSS IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 4.0 100 -100 175 40 65 35 125 80 50 -- Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 7900 910 70 -- -- -- A nA nC VDD = 100V, ID = 55A, VGS =12V, RG = 2.35 ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) -- -- -- -- 55 220 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge -- -- -- -- -- -- 1.2 450 7.0 V nS C ton Forward Turn-On Time Test Conditions Tj = 25C, IS = 55A, VGS = 0V Tj = 25C, IF = 55A, di/dt 100A/s VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max -- -- -- 1.6 0.42 -- Units C/W Test Conditions soldered to a 2" square copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHNA57260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (SMD-2) Diode Forward Voltage 200 2.0 -- -- -- -- -- 4.0 100 -100 10 0.044 -- 0.043 -- 1.2 200 1.5 -- -- -- -- Test Conditions -- 4.0 100 -100 25 0.049 A -- 0.048 VGS = 12V, ID =35A -- 1.2 V VGS = 0V, IS = 55A V nA VGS = 0V, ID = 1.0mA VGS = VDS , ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =35A 1. Part numbers IRHNA57260, IRHNA53260 and IRHNA54260 2. Part number IRHNA58260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Br I Au LET MeV/(mg/cm2)) 36.7 59.8 82.3 VDS (V) Range (m) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 39.5 200 200 150 100 50 32.5 200 100 40 35 30 28.4 50 35 25 -- -- Energy (MeV) 309 341 350 250 VDS 200 Br I Au 150 100 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA57260 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 5.0V 10 20s PULSE WIDTH T = 25 C 1 100 5.0V 10 10 100 2.5 TJ = 150 C 15 V DS = 50V 20s PULSE WIDTH 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 C 7.0 10 100 Fig 2. Typical Output Characteristics 1000 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 5.0 J 1 0.1 VDS , Drain-to-Source Voltage (V) 100 20s PULSE WIDTH T = 150 C J 1 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 55A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com IRHNA57260 Pre-Irradiation VGS = Ciss = Crss = Coss = C, Capacitance (pF) 10000 Ciss 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 8000 6000 C oss 4000 2000 C rss 20 VGS , Gate-to-Source Voltage (V) 12000 VDS = 160V VDS = 100V VDS = 40V 15 10 5 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 1000 1000 TJ = 150 C ID , Drain Current (A) TJ = 25 C V GS = 0 V 0.1 0.2 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 150 200 250 OPERATION IN THIS AREA LIMITED BY R DS(ON) 100 10 1 100 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 50 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) ID = 55 A 2.2 10us 10 100us 1ms 1 Tc = 25C Tj = 150C Single Pulse 10ms 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA57260 Pre-Irradiation 60 RD VDS VGS 50 D.U.T. I D , Drain Current (A) RG + -VDD 40 VGS Pulse Width 1 s Duty Factor 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com IRHNA57260 Pre-Irradiation 1 5V L VDS D .U .T. RG IA S 2V0GS V D R IV E R + - VD D 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 800 TOP BOTTOM 600 400 200 0 25 V (B R )D SS ID 25A 35A 55A 50 75 100 125 150 Starting TJ , Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2F .3F 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA57260 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, L= 0.25 mH Peak IL = 55A, VGS = 12V I SD 55A, di/dt 120A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions -- SMD-2 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/03 8 www.irf.com