BD9B300MUV-EVK-101 - ROHM Semiconductor

Datashee

t

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

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2.7V to 5.5V Input, 3.0A Integrated MOSFET

Single Synchronous Buck DC/DC Converter

BD9B300MUV

General Description

BD9B300MUV is a synchronous buck switching

regulator with built-in l o w on-resistance po wer MOSFETs.

This IC, which is capable of providing current up to 3A,

features fast transient response by employing constant

on-time control system. It offers high oscillating

frequency at low inductance. With its original constant

on-time control method which operat es low consumption

at light load, this product is ideal for equipment and

devices that demand minimal standby power

consumption.

Features

 Synchronous Single DC/DC C onverter

 Constant on-time control suitable to Deep-SLLM

 Over Current Protection

 Short Circuit Protection

 Thermal Shutdown Protection

 Under Voltage Lockout Protection

 Adjustable Soft Start

 Power Good Output

 VQFN016V3030 Package

(backside heat dissipation)

Applications

 Step-down Power Supply for DSPs, FPGAs,

Microprocessors, etc.

 Laptop PCs/Tablet PCs/Servers

 LCD TVs

 Storage Devices (HDDs/SSDs)

 Printers, OA Equipment

 Entertainment Devices

 Distributed Power Supply, Secondary Power Supply

Key Specifications

 Input Voltage Range: 2.7V to 5.5V

 Output Voltage Range: 0.8 V to VPVIN x 0.8 V

 Maximum Operating Current: 3A (Max)

 Switching Frequenc y: 2MHz/1MHz (Typ)

 High-Side MOSFET ON Resistance: 35mΩ (Typ)

 Low-Side MOSFET ON Resistance: 35mΩ (Typ)

 Standby Current: 0μA (T yp)

Package W (Typ) x D (Typ) x H (Max)

VQFN016V3030 3.00 mm x 3.00 mm x 1.00 mm

Typical Application Circuit

Figure 1. Application Circuit

VQFN016V3030

EN

PVIN

BOOT

FREQ

PGD

SW

FB

VIN

VOUT

AVIN

SS

PGD

MODE

AGND

PGND

Enable

10µF 0.1µF

CSS

R2

R1

CBOOT

22µF×2CFB

1.0µH

Datasheet

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BD9B300MUV

Pin Configuration

Pin Descriptions

Pin No. Pin Name Function

1, 2 PVIN Power supply terminals for the switching regulator.

These terminals supply p ower to the output stage of the switching regulator.

Connecting a 10µF ceramic capacitor is recommended.

3, 4 PGND Ground terminals for the output stage of the switching regulator.

5 AGND Ground terminal for the control circuit.

6 FB

An inverting input node for the error amplifier and main comparator.

See page 22 for how to calculate the resistance of the output voltage setting.

7 FREQ

Terminal for setting switching frequency. C on necting this terminal to ground makes

switching to operate constant on-time corresponding to 2.0MHz. Connecting this

terminal to AVIN makes switching to operate constant on-time corresponding to

1.0MHz. This terminal needs to be terminated.

8 MODE

Terminal for setting switching control mode. Connecting this terminal to AVIN forces

the device to operate in the fixed frequ ency PWM mode. Connecting this terminal to

ground enables the Deep-SLLM control and the mode is automatically switched

between the Deep-SLLM control and fixed frequenc y PWM mode.

9 SS

Terminal for setting the soft start time. The rise time of the output voltage can be

specified by connecting a capacitor to this terminal. See page 23 for how to calculate

the capacitance.

10, 11, 12 SW

Switch nodes. These terminals are connected to the source of the High-Side

MOSFET and drain of the Low-Side MOSFET. Connect a bootstrap capacitor of 0.1

µF between these terminals and BOOT terminal. In addition, connect an inductor of

0.47µH to 1µH (FREQ=L), 1μH to 1.5μH (FREQ=H) considering the direct current

superimposition characteristic.

13 BOOT

Terminal for bootstrap. Connect a bootstrap capacitor of 0.1 µF between this terminal

and SW terminals. The voltage of this capacitor is the gate drive voltage of the

High-Side MOSFET.

14 PGD

A “Power Good” terminal, an open drain output. Use of pull up resistor is needed. See

page 17 for how to specify the resistance. When the FB terminal voltage reaches

more than 80% of 0.8 V, the internal Nch MOSFET turns off and the output turns High.

15 EN

Enable terminal. Turning this termina l signal Low (0.3V or lower) forces the device to

enter the shutdown mode. Turning this terminal signal High (2.0V or higher) enables

the device. This terminal must be terminated.

16 AVIN

Terminal for supplying power to the control circuit of the switching regulator.

Connecting a 0.1µF ceramic capacitor is recommended.

- E-Pad

A backside heat dissipation exposed pad. Connecting to the internal PCB ground

plane by using multiple vias pr ovides excellent heat dissipation characteristics.

Figure 2. Pin Assignment

(TOP VIEW)

AGND

FREQ

MODE BOOT

PGD

EN

AVIN

FB

Datasheet

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BD9B300MUV

Block Diagram

Figure 3. Block Diagram

Control

Logic

+

DRV

Voltage

Reference

TSD

UVLO

On Time

Modulation

FB

MODEPGD

PGND

SW

PVIN

EN

VOUT

3

8

1

6

4

2

AVIN

5AGND

9

BOOT

SS

7FREQ

PGOOD

Soft Start

Error

Amplifier

Main

Comparator

OCP

SCP

PGD

Datasheet

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BD9B300MUV

Description of Blocks

● VREF

The VREF block generates the internal reference voltage.

● UVLO

The UVLO block is for Under Voltage lockout protection. It will shut down the IC when VIN falls to 2.45 V (Typ) or

lower. The threshold voltage has a hysteresis of 100mV (Typ).

● TSD

The TSD block is for thermal protection. The thermal protection circuit shuts down the device when the internal

temperature of IC rises to 175°C (Typ) or higher. Thermal protection circuit resets when the temperature falls. The

circuit has a hysteresis of 25°C (Typ).

● Soft Start

The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the

prevention of output voltage overshoot and inrush current. A built-in soft start function is provided and a soft start is

initiated in 1msec (Typ) when the SS terminal is open.

● Control Logic + DRV

This block is a DC/DC driver. A signal from On Time is applied to drive the MOSFETs.

● PGOOD

When the FB terminal voltage reaches more than 80% of 0.8 V, the Nch MOSFET of the built-in open drain output

turns off and the output turns High.

● OCP/SCP

After soft start is completed and in condition where output voltage is below 70% (typ) of voltage setting, it counts the

number of times of which current flowing in High side FET reaches over current limit. When 1024 times is counted it

stops operation for 1m sec (typ.) and re-operates. Counting is reset when output voltage is above 80% (t yp.) of

voltage setting or when EN, UVLO, SCP function is re-operated.

● Error Amplifier

Adjusts Main Comparator input to make internal reference voltage equal to FB terminal voltage.

● Main Comparator

Main comparator compares Error Amplifier output and FB terminal voltage. When FB terminal voltage becomes low it

outputs High and reports to the On Time block that the output voltage has dropped below control voltage.

● On Time

This is a block which creates On Time. Requested On Time is created when Main Comparator output becomes High.

On Time is adjusted to restrict frequency change even with I/O voltage change.

Datasheet

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BD9B300MUV

Absolute Maximum Ratings (Ta = 25°C)

Parameter Symbol Rating Unit

Supply Voltage VPVIN, VAVIN -0.3 to +7 V

EN Terminal V olt age VEN -0.3 to +7 V

MODE Terminal V olt age VMODE -0.3 to +7 V

FREQ Terminal V olt age VFREQ -0.3 to +7 V

PGD Terminal V olt age VPGD -0.3 to +7 V

Voltage from GND to BOOT VBOOT -0.3 to +14 V

Voltage from SW to BOOT ⊿VBOOT -0.3 to +7 V

FB Terminal V olt age VFB -0.3 to +7 V

SW Terminal V olt age VSW -0.3 to VPVIN + 0.3 V

Output Current IOUT 3.5 A

Allowable Power Dissipation(Note 1) Pd 2.66 W

Operating Temperature Range Topr -40 to 85 C

Storage Temperature Range Tstg -55 to 150 C

(Note 1) When mounted on a 70mm x 70mm x 1.6mm 4-layer glass epoxy board (copper foil area: 70 mm x 70 mm)

Derate by 21.3mW when operating above 25C

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over

the absolute maximum ratings.

Recommended Operating Conditions (Ta= -40°C to +85°C)

Parameter Symbol Min Typ Max Unit

Supply Voltage VPVIN, VAVIN 2.7 - 5.5 V

Output Current (Note 2) IOUT - - 3 A

Output Voltage Range VRANGE 0.8 - VPVIN × 0.8 V

(Note 3) Pd, ASO should not be exceeded

Datasheet

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BD9B300MUV

Electrical Characteristics (Unl ess otherwise specified Ta=25°C, VAVIN = VPVIN = 5V, VEN = 5V, VMODE = GND)

Parameter Symbol Min Typ Max Unit Conditions

AVIN pin

Standby Supply Current ISTB - 0 10 µA EN=GND

Operating Supply Current ICC - 35 50 µA

FREQ=AVIN, IOUT=0mA

Non switching

UVLO Detection Threshold VUVLO1 2.35 2.45 2.55 V VIN falling

UVLO Release Threshold VUVLO2 2.425 2.55 2.7 V VIN rising

UVLO Hysteresis VUVLOHYS 50 100 200 mV

Enable

EN Input High Level Voltage VENH 2.0 - - V

EN Input Low Level Voltage VENL - - 0.3 V

EN Input Current IEN - 0 10 µA EN=5V

Reference Voltage, Error Amplifier

FB Terminal V olt age VFB 0.792 0.8 0.808 V

FB Input Bias Current IFB - - 1 µA FB=0.8V

Internal Soft Start Time TSS 0.5 1.0 2.0 ms With internal constant

Soft Start Terminal Current ISS 0.5 1.0 2.0 µA

Control

FREQ Input High Level Voltage VFRQH VAVIN-0.3 - - V

FREQ Input Low Level Voltage VFRQL - - 0.3 V

MODE Input High Level Voltage VMODEH VAVIN-0.3 - - V

MODE Input Low Level Voltage VMODEL - - 0.3 V

On time1 ONT1 96 120 144 ns VOUT=1.2V, FREQ=GND

On time2 ONT2 192 240 288 ns VOUT=1.2V, FREQ=AVIN

Power Good

Power Good Rising Threshold VPGDH 75 80 85 % FB rising, VPGDH=FB/VFBx100

Power Good Falling Threshold VPGDL 65 70 75 % FB falling,

VPGDL=FB/VFBx100

Output Leakage Current ILKPGD - 0 5 µA PGD=5V

Power Good On Resistance RPGD - 100 200 Ω

Power Good Low Level Voltage PGDVL - 0.1 0.2 V IPGD=1mA

SW

High Side FET On Resistance RONH - 35 70 mΩ BOOT - SW = 5 V

Low Side FET On Resistance RONL - 35 70 mΩ

High Side Output Leakage Current RILH - 0 10 µA No switching

Low Side Output Leakage Current RILL - 0 10 µA No switching

Datasheet

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BD9B300MUV

Typical Performance Curves

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000 10000

Load Current [mA ]

Efficiency[%]

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000 10000

Load Current [mA ]

Efficiency [%]

0

5

10

15

20

25

30

35

40

-40 -20 0 20 40 60 80

Temperature [°C]

ICC [uA]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40-200 20406080

Temperature [°C]

ISTBY [uA]

MODE=L

MODE=H

MODE

=

L

MODE=H

Figure 4. Operating Supply Current vs Temperature Figure 5. Stand-by Supply Current vs

Temperature

Figure 6. Efficiency vs Load Current

(VIN=5V, VOUT=1.2V, L=1.0µ H, F REQ=L) Figure 7. Efficiency vs Load Current

(VIN=5V, VOUT=1.2V, L=1.5µ H, FREQ=H)

VOUT=1.2V,

FREQ=L VOUT=1.2V,

FREQ=L

VIN=5V

VIN=3.3V

VIN=5V

VIN=3.3V

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 8. Efficiency vs Load Current

(VIN=5V, VOUT=3.3V, L=1.0µ H, FREQ=L) Figure 9. Efficiency vs Load Current

(VIN=5V, VOUT=3.3V, L=1.5µ H, FREQ=H)

Figure 10. FB Voltage vs Temperature Figure 11. UVLO Threshold vs Temperature

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000 10000

LOAD [mA]

E ffici en cy [% ]

MODE=L

MODE=H

0

10

20

30

40

50

60

70

80

90

100

1 10 100 1000 10000

LOAD [mA]

E ffici en cy [% ]

MODE=L

MODE=H

VOUT=3.3V,

FREQ=L VOUT=3.3V

FREQ=H

0.792

0.794

0.796

0.798

0.800

0.802

0.804

0.806

0.808

-40-200 20406080

Temperature [°C]

V

FB

[V]

VIN=5V

VIN=3.3V

2.36

2.40

2.44

2.48

2.52

2.56

2.60

-40 -20 0 20 40 60 80

Temperature [°C]

V

UVLO

[V]

Release

Detect

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 14. FREQ Threshold vs Temperature Figure 15. FREQ Input Current vs Temperature

Figure 12. EN Threshold vs Temperature Figure 13. EN Input Current vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-40-200 20406080

Temperature [°C]

VFREQ [V]

VIN=5V

VIN=3.3V

0.0

0.5

1.0

1.5

2.0

2.5

-40-200 20406080

Temperature [°C]

I

FREQ

[μA]

VIN=5V

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-40-200 20406080

Temperature [°C]

V

EN

[V]

UP

DOWN

0.0

0.5

1.0

1.5

2.0

2.5

-40-200 20406080

Temperature [°C]

I

EN

[μA]

VIN=3.3V

VIN=5V

VIN=3.3V

VIN=5.0V

VIN =5.0V

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 18. High Side ON-Resistance Figure 19. Low Side ON-Resistance

Figure 16. MODE Threshold Voltage vs Temperature Figure 17. MODE Input Current vs Temperature

0.5

1.0

1.5

2.0

2.5

3.0

3.5

-40-200 20406080

Temperature [°C]

V

MODE

[V]

VIN=5V

VIN=3.3V

3.0

3.5

4.0

4.5

5.0

5.5

6.0

-40 -20 0 20 40 60 80

Temperature [°C]

I

MODE

[μA]

VIN=5V

20.0

22.5

25.0

27.5

30.0

32.5

35.0

37.5

40.0

-40 -20 0 20 40 60 80

Temperature [°C]

R

ONH

[mΩ]

V

IN

=

5V

VIN=3.3V

20.0

22.5

25.0

27.5

30.0

32.5

35.0

37.5

40.0

-40 -20 0 20 40 60 80

Temperature [°C]

R

ONL

[mΩ]

VIN=5V

VIN=3.3V

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 22. Soft Start Time vs Temperature Figure 23. SS Terminal Current vs Temperature

Figure 20. PGD Threshold vs Temperature Figure 21. PGD ON ON-Resistance vs Temperature

60

70

80

90

100

110

120

-40-200 20406080

Temperature [°C]

P

GD

ON抵抗[Ω]

60

65

70

75

80

85

-40 -20 0 20 40 60 80

Temperature [°C]

V

PGD

[%]

RISING

FALLING

VIN=5V

VIN=3.3V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-40-200 20406080

Temperature [°C]

I

SS

[μA]

VIN=5V

VIN=3.3V

0.0

0.5

1.0

1.5

2.0

-40-200 20406080

Temperature [°C]

T

SS

[ msec]

VIN=5V

VIN=3.3V

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 26. Switching Frequency vs Input Voltage

Figure 27. Switching Frequency vs Input Voltage

Figure 24. Switching Frequency vs Load Current

Figure 25. Switching Frequency vs Load Current

800

850

900

950

1000

1050

1100

1150

1200

3.0 3.5 4.0 4.5 5.0 5.5

VI N Input Voltage [V]

f

SW

[kHz]

0

200

400

600

800

1000

1200

0 500 1000 1500 2000 2500 3000

Load Current [mA ]

f

SW

[kHz]

MODE=L

MODE=H

FREQ=H

VIN=5V

0

400

800

1200

1600

2000

2400

0 500 1000 1500 2000 2500 3000

Load Current [mA ]

f

SW

[kHz]

MODE=L

MODE=H

FREQ=L

VIN=5V

1600

1700

1800

1900

2000

2100

2200

2300

2400

3.0 3.5 4.0 4.5 5.0 5.5

VI N Input Voltage [V]

f

SW

[kHz]

VOUT=1.2V

MODE=H

FREQ=L

IOUT=1A

VOUT=1.2V

MODE=H

FREQ=H

IOUT=1A

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 30. Power Up Waveform with VIN

(FREQ=H, RLOAD=0.5Ω) Figure 31. Power Down Waveform with VIN

(FREQ=H, RLOAD=0.5Ω)

Figure 28. Power Up Waveform with EN

(FREQ=H, RLOAD=0.5Ω) Figure 29. Power Down Waveform with EN

(FREQ=H, RLOAD=0.5Ω)

Time=1ms/div Time=1ms/div

VIN=5V/div

EN=5V/div

VOUT=1V/div

SW=5V/div

VIN=5V/div

EN=5V/div

VOUT=1V/div

SW=5V/div

VIN=5V/div

EN=5V/div

VOUT=1V/div

SW=5V/div

VIN=5V/div

EN=5V/div

VOUT=1V/div

SW=5V/div

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 34. Switching Waveform

(VIN=5V, VOUT=1.2V, FREQ=H, IOUT=0.2A) Figure 35. Switching Waveform

(VIN=5V, VOUT=1.2V, FREQ=H, IOUT=3A)

Figure 32. Switching Waveform

(VIN=5V, VOUT=1.2V, FREQ=L, IOUT=0.1A) Figure 33. Switching Waveform

(VIN=5V, VOUT=1.2V, FREQ=L, IOUT=3A)

Time=1µs/div

VOUT=20mV/div

SW=2V/div Time=1

µ

s/div

VOUT=20mV/div

SW=2V/div

Time=1µs/div

VOUT=20mV/div

SW=2V/div Time=1µs/div

VOUT=20mV/div

SW=2V/div

Datasheet

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BD9B300MUV

Typical Performance Curves - con tinued

Figure 36. Line Regulation

(VOUT=1.2V, L=1.5μH, FREQ=H) Figure 37. Load Regulation

(VIN=5V, VOUT=1.2V, L=1.5μH, FREQ=H)

Figure 38. Load Transient Re sponse IOUT=0.1A to 2A

(VIN=5V, VOUT=1.2V, FREQ=L, MODE=L, COUT=Ceramic 44µF)

Figure 39. Load Transient Re sponse IOUT=0A to 3A

(VIN=5V, VOUT=1.2V, FREQ=L, MODE=H, COUT=Ceramic 44µF)

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

2.5 3.0 3.5 4.0 4.5 5.0 5.5

VIN Input Voltage[V]

Output Voltage Deviation[%]

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Load Current [A]

Output Voltage Deviation[%]

MODE=H

MODE=L

MODE=H

Time=0.5m

/

div

VOUT=50mV/div

IOUT=1A/div Time=0.5m

/

div

VOUT=50mV/div

IOUT=1A

/

div

Datasheet

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BD9B300MUV

Application Example(s)

1. Basic Operation

(1) DC/DC Converter operation

BD9B300MUV is a synchron ous rectifying step-do wn switching regulator t hat achieves faster transient response by

employing constant on-time control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode

for heavier load, while it utilizes Deep-SLLM (Simple Light Load Mode) control for lighter load to improve efficiency.

Figure 40. Efficiency (Deep-SLLMTM Control and PWM Control)

① Deep-SLLMTM Control

②PWM Control

VOUT

20mV/div

SW

2.0V/div

VOUT

20mV/div

SW

2.0V/div

② PWM Control

Efficiency η[%]

Output Current IOUT [A]

① Deep-SLLMTM Control

Figure 41. Switching Waveform at Deep-SLLM

TM

Control

(VIN=5.0V, VOUT=1.2V, IOUT=100mA) Figure 42. Switching Waveform at PWM Control

(VIN=5.0V, VOUT=1.2V, IOUT=3A)

Datasheet

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BD9B300MUV

(2) Enable Control

The IC shutdown can be controlled by the voltage applied to the EN terminal. When VEN reaches 2.0 V(Typ), the

internal circuit is activated and the IC starts up. To enable shutdown control with the EN terminal, the shutdown

interval (Low level interval of EN) must be set to 100 µs or longer.

Figure 43. Start Up and Down with Enable

(3) Power Good

When the output voltage reaches more than 80% of the voltage setting, the open drain NMOSFET, internally

connected to the PGD terminal, turns off and the PGD terminal turns to Hi-z condition. Also when the output voltage

falls below 70% of voltage setting, the open drain NMOS FET turns on and PGD terminal pulls down with 100Ω.

Connecting a pull up resistor (10KΩ to 100KΩ) is recommended.

Figure 44. Power Good Timing Chart

(4) Soft Start

When EN terminal is turned High, Soft Start operates and out put voltage gradually rises. With the Soft Start Function,

over shoot of output voltage and rush current can be prevented. Rising time of output voltage when SS terminal is

open is 1msec (typ.). Capacitor connected to SS terminal makes rising time more than 1msec. Please refer to page

23 for the method of setting rising time.

Figure 45. Soft Start Timing Chart

VEN

0

VOUT

0Soft start 1 msec

(typ.)

VENH

VENL

EN terminal

Output setting voltage

t

Datasheet

18/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

2. Protection

The protective circuits are intended for p revention of d amage caused b y unexpe cted acciden ts. Do not use them

for continuous protective operation

(1) Over Current Protection (OCP) / Short Circuit Protection (SCP)

Setting of Over current protection is 5.0A (typ.). When OCP is triggered, over current protection is realized by

restricting On / Off Duty of current flowing in upper MOSFET by each switching cycle. Also, if Over current protectio n

operates 1024 cycles in a condition where FB terminal voltage reaches below 70% of internal standard voltage,

Short Circuit protection (SCP) operates and stops switching for 1msec (typ.) before it initiates restart. However,

during startup, Short circuit protection will not operate even if the IC is still in the SCP condition.

Table 1. Over Current Protection / Short Circuit Protection Function

EN terminal PGD Startup Over current

protection Short circuit

protection

More than 2.0V L While start up Valid Invalid

Startup completed Valid Valid

H ＊ Valid Invalid

Less than 0.3V ＊＊ Invalid Invalid

Figure 46. Short Circuit Protection (SCP) Timing Chart

VOUT

FB

High side

MOSFET gate

1ms(typ.)

Low side

MOSFET gate

Coil current

Inside IC

OCP signal

PGD

OCP threshold

1024 Cycle

Datasheet

19/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

(2) Under Voltage Lockout Protection (UVLO)

The Under Voltage Lockout Protection circuit monitors the AVIN terminal voltage.

The operation enters standby when the AVIN terminal voltage is 2.45V (Typ) or lower.

The operation starts when the AVIN terminal voltage is 2.55V (Typ) or higher.

Figure 47. UVLO Timing Chart

(3) Thermal Shutdown

When the chip temperature exceeds Tj=175C, the DC/DC converter output is stopped. The thermal shutdo wn circuit

is intended for shutting down the IC from thermal runaway in an abnormal state with the temperature exceeding

Tjmax=150C. It is not meant to protect or guarantee the soundness of the application. Do not use the function of

this circuit for application protection design.

VIN

0V

VOUT

High side

MOSFET gate

FB

terminal

Soft start

hys

UVLO OFF

UVLO ON

Normal operation Normal operationUVLO

Low side

MOSFET gate

Datasheet

20/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Application Example

Figure 48. Application Circuit

Table 2. Recommended Component Values (VIN=5V, FREQ=H)

Table 3. Recommended Component Values (VIN=5V, FREQ=L)

Reference

Designator VOUT Description

1.0V 1.2V 1.5V 1.8V 3.3V

R5 100kΩ 100kΩ 100kΩ 100kΩ 100kΩ -

R7 75kΩ 75kΩ 160kΩ 150kΩ 160kΩ -

R8 300kΩ 150kΩ 180kΩ 120kΩ 51kΩ -

C2 10μF 10μF 10μF 10μF 10μF 10V, X5R, 3216

C4 0.1μF 0.1μF 0.1μF 0.1μF 0.1μF 25V, X5R, 1608

C8 0.1μF 0.1μF 0.1μF 0.1μF 0.1μF -

C9 22μF 22μF 22μF 22μF 22μF 6.3V, X5R, 3225

C10 22μF 22μF 22μF 22μF 22μF 6.3V, X5R, 3225

C14 120p 120pF 150pF 180pF 180pF -

L1 1.5μH 1.5μH 1.5μH 1.5μH 1.5μH TOKO, FDSD0630

Reference

Designator VOUT Description

1.0V 1.2V 1.5V 1.8V 3.3V

R5 100kΩ 100kΩ 100kΩ 100kΩ 100kΩ -

R7 75kΩ 75kΩ 160kΩ 150kΩ 160kΩ -

R8 300kΩ 150kΩ 180kΩ 120kΩ 51kΩ -

C2 10μF 10μF 10μF 10μF 10μF 10V, X5R, 3216

C4 0.1μF 0.1μF 0.1μF 0.1μF 0.1μF 25V, X5R, 1608

C8 0.1μF 0.1μF 0.1μF 0.1μF 0.1μF -

C9 22μF 22μF 22μF 22μF 22μF 6.3V, X5R, 3225

C10 22μF 22μF 22μF 22μF 22μF 6.3V, X5R, 3225

C14 100p 120pF 100pF 120pF 120pF -

L1 1.0μH 1.0μH 1.0μH 1.0μH 1.0μH TOKO, FDSD0630

Datasheet

21/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Selection of Components Externally Connected

1. Output LC Filter Constant

In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the

output voltage. It is recommended to use inductors of values 0.47µH to 1.0µH when FREQ=L or 1.0µH to 1.5µH at

FREQ=H.

Figure 49. Waveform of curren t through inductor Figure 50. Output LC filter circuit

Inductor ripple current ΔIL

Where:

VIN= 5V

VOUT= 1.2V

L=1.5µH

FOSC=1MHz (switching frequency)

The saturation current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor

ripple current ∆IL.

The output capacitor COUT affects the output ripple voltage c haracteristics. The output capacitor COUT must satisfy the

required ripple voltage characteristics.

The output ripple voltage can be represented by the following equation.

where RESR is the Equivalent Series Resistance (ESR) of the output capacitor.

* The capacitor rating must allow a sufficient margin with respect to the output voltage.

The output ripple voltage can be decreased with a smaller ESR.

A ceramic capacitor of about 22 µF to 47 µF is recommended.

*Be careful of total capacitance value, when additional capacitor CLOAD is connected in addition to output capacitor COUT.

Use maximum additional capacitor CLOAD (Max) condition which satisfies the following condition.

Maximum starting inductor ripple current ILSTART can be expressed using the following equation.

IL

t

Inductor saturation current > IOUTMAX +⊿IL /2

IOUTMAX

Average inductor current

⊿IL



mA

60

8



L



F



V

1



󰇜

V

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I

3.8A󰇛min

󰇜

limi

t

Curren

t

Ove

r



I

L

curren

t

rippl

e

inducto

r

startin

g

Maximu

m

START

2

Δ

I



󰇜

I

capacitor

󰇛

outpu

t

o

curren

t

Charg

e



current󰇛

I

outpu

t

startin

g

Maximu

m



I

L

CA

P

󰇜

OMA

X

STAR

T



V

󰇜

F



C



8

1



󰇛

R



Δ

I



Δ

V

OS

C

OUT

ES

R

L

RP

L

Datasheet

22/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Charge current to output capacitor ICAP can be expressed using the follo wing equ ation.

For example, given VIN= 5V, VOUT= 3.3V, L= 1.5µH, switching frequency FOSC= 800kHz(Min), Output capacitor COUT=

44µF, Soft Start time TSS= 0.5ms(Min), and load current during soft start IOSS= 3A, maximum CLOAD can be computed

using the following equation.

If the value of CLOAD is large, and cannot meet the above equation, adjust the value of the capacitor CSS to meet the

condition below.

(Refer to the following items (3) Soft Start Setting equation of time TSS and soft-start value of the capacitor to be

connected to the CSS.)

For example, given VIN = 5V, VOUT = 3.3V, L = 1.5µH, load current during soft start IOSS = 3A, switching frequency FOSC=

800kHz (Min), Output capacitor COUT = 44µF, VFB = 0.792V(Max), ISS = 3.6µA(Max), with CLOAD = 220uF, capacitor CSS

is computed as follows.

2. Output Voltage Setting

The output voltage value can be set by the feedback resistance ratio.

For stable operation, it is recommended to use feedback resistance R1 of more than 20kΩ.

Figure 51. Feedback Resistor Circuit

VOUT

R1

R2

FB

Error Amplifier

0.8V



V

0.

8



R

2

R

2



R

1



V

OUT

[]

A

S

OU

T

LOA

D

OU

T

CA

P

T

V



󰇜

C

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󰇛

C



I

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6.3

8

C

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2

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L

Δ

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8

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OU

T

OU

T

S

OS

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D

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T

S

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B

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8

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1

OU

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0.

8

‐

V

0.

8



R

Datasheet

23/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

3. Soft Start Setting

Turning the EN terminal sign al High activates the soft start function. This causes the output voltage to ri se gradually

while the current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush

current. The rise time depends on the value of the capacitor connected to the SS terminal.

Turning the EN terminal signal High with the SS terminal open or with the terminal signal High (no capacitor

connected) causes the output voltage to rise in 1msec (Typ).

4. FB Capacitor

Generally, in fixed ON time control (hysteresis control), sufficient ripple voltage in FB voltage is needed to operate

comparator stably. R egarding this IC, by injecting ripple voltage to FB voltage inside IC it is designed to correspond

to low ESR output capacitor. Please set the FB capacitor within the range of the following expression to inject an

appropriate ripple.

  



msec

μAVμF

with

CurrentSourceTerminalStartSoft

(Typ))(0.8VVoltageTerminalFB

TerminalTimeStartSofttoconnectedCapacitor

TimeStartSoft

8.

0



/

1.

0

0.

8



󰇛0.0

1



T

0.01C

I

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C

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V

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

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C

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/

I

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

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SS

FB

SS



FBSSSSSS

S

F

B

S

)

,

:

F



))(1.0μA(Typ

FrequencySwitching :

VoltageOutput :

VoltageInput :

SW

OUT

IN

SW

IN

OU

T

OUT

FB

SW

IN

OU

T

OUT

f



V



V

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C

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107.5f

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V

‐

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1



V

33

Datasheet

24/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

PCB Layout Design

In the step-down DC/DC converter, a large pulse curr ent flo ws into two loops. The first loop is the one into which the curren t

flows when the High-Side FET is turned ON. The flo w starts from the input capacitor CIN, runs through the FET, inductor L

and output capacitor COUT and back to GND of CIN via GND of COUT. The second loop is the one into which the current

flows when the Low-Side FET is turned on. The flo w starts from the Lo w-Side FET, runs through the i nductor L and output

capacitor COUT and back to GND of the Low-Side FET via GND of COUT. Route these two loops as thick and as short as

possible to allow noise to be reduc ed for improved efficiency. It is recommended to connect the input and outp ut capacitors

directly to the GND plane. The PCB layout has a great influence on the DC/DC converter in terms of all of the heat

generation, noise and efficiency characteristics.

Accordingly, design the PCB layout considering the follo wing poi nts.

 Connect an in put capacitor as close as possible to the IC PVIN terminal on the same plane as the IC.

 If there is any unused area on the PCB, provide a copper foil plane for the GND nod e to assist heat dissipation from

the IC and the surrounding compon ents.

 Switching no des such as SW are susceptible to noise due to AC coupling with other n od es. Route the coil pattern as

thick and as short as possible.

 Provide lin es conn ected to FB far from the SW nodes.

 Place the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.

Power Dissipation

When designing the PCB layout and peripheral circuitry, sufficient consideration must be given to ensure that the power

dissipation is within the allowable dissipation curve.

Figure 52. Current Loop of Buck Converter

Figure 53. Thermal Derating Characteristics

(VQFN016V3030)

A

llowable power dissipation: Pd [W]

Ambient temperature: Ta [°C]

(1) 4-layer b oard (surface heat dissipation copper foil 5505 mm

2

)

(copper foil laminated on each layer)

θJA = 47.0°C/W

(2) 4-layer board (surface heat dissipation copper foil 6.28 mm2)

(copper foil laminated on each layer)

θJA = 70.62°C/W

(3) 1-layer board (surface heat dissipation copper foil 6.28 mm2)

θJA = 201.6°C/W

(4) IC only

θJA = 462.9°C/W

0 25 50 75 100 125 150

0

2.0

3.0

4.0

(2)1.77 W

(1)2.66 W

(3)0.62 W

(4)0.27 W

105

Datasheet

25/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

I/O equivalence circuit(s)

6. FB 7. FREQ

8. MODE 9. SS

10.11.12. SW 13. BOOT

14. PGD 15. EN

SW

PVIN

BOOT

PVIN

SW

EN

30kΩ

70kΩ

Datasheet

26/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Operational Notes

1. Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

2. Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the

digital and analog blocks to prevent nois e in the ground and supply lines of the digital block from affecting the analog

block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and

aging on the capacitance value when using electrolytic capacitors.

3. Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

4. Ground Wiring Pattern

When using both small-signal and lar ge-current ground traces, the t wo ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large curre nts. Also ensure that the grou nd traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as pos sible to reduce line impedanc e.

5. Thermal Consideration

Should by any chance the power dissipation rating be exceeded, the rise in temperature of the chip may result in

deterioration of the properties of the chip. The absolute ma ximum rating of the Pd stated in this specification is when

the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum

rating, increase the board size and copper area to prevent exceeding the Pd rating.

6. Recommended Operating Conditions

These conditions represent a range within which the expected characteristi cs of the IC can be approximatel y obtained.

The electrical characteristics are guaranteed under the conditions of each parameter.

7. Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may

flow instantaneously due to the internal powering sequenc e and delays, especially if th e IC has more than one power

supply. T herefore, give s peci al cons ideration to power coupling capacitance, power wiring, width of ground wiring, and

routing of connections.

8. Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

9. Testing on App lication Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent dam age from static discharge, ground the IC during assembly and u se similar precautions durin g

transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in bet ween pins during assembly to name a few.

Datasheet

27/30 TSZ02201-0J2J0AJ00410-1-2

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TSZ22111 • 15 • 001

BD9B300MUV

Operational Notes – continued

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high i mpedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground lin e.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should

be avoided.

Figure 54. Example of monolithic IC structure

13. Ceramic Capacitor

When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with

temperature and the decrease in nomi nal capacitance due to DC bias and others.

14. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe

Operation (ASO).

15. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction

temperature (Tj) will rise whic h will activate the TSD circuit that will turn OF F all output pins. When the Tj falls belo w

the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that e xceeds the absolute ma ximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

16. Over Current Protection Circuit (OCP)

This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This

protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should

not be used in applications characterized by continuous operation or transitioni ng of the protection circuit.

Datasheet

28/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Ordering Information

B D 9 B 3 0 0 M U V - E 2

Part Number

Package

VQFN016N3030

Packaging and forming specific ation

E2: Embossed tape and reel

Marking Diagrams

VQFN016V3030 (TOP VIEW)

D9B Part Number Marking

LOT Number

1PIN MARK

300

Datasheet

29/30 TSZ02201-0J2J0AJ00410-1-2

www.rohm.com

TSZ22111 • 15 • 001

BD9B300MUV

Physical Dimension, Tape and Reel Information

Package Name VQFN016V3030

∗

Order quantity needs to be multiple of the minimum quantity.

Embossed carrier tapeTape

Quantity

Direction

of feed

The direction is the 1pin of product is at the upper left when you hold

reel on the left hand and you pull out the tape on the right hand

3000pcs

E2

()

Direction of feed

Reel 1pin

Datasheet

30/30 TSZ02201-0J2J0AJ00410-1-2

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TSZ22111 • 15 • 001

BD9B300MUV

Revision History

Date Revision Changes

23.MAY.2014 001 New Release

Notice-GE Rev.003

Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅡb

CLASSⅢ

CLASSⅣ

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-GE Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

QR code printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,

please consult with ROHM representative in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable

for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the information contained in this document.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

DatasheetDatasheet

Notice – WE Rev.001

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or

concerning such information.

Mouser Electronics

Authorized Distributor

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ROHM Semiconductor:

BD9B300MUV-E2 BD9B300MUV-EVK-101