HAF2012(L),HAF2012(S)
Silicon N Channel MOS FET Series
Power Switching
ADE-208-677A (Z)
2nd. Edition
July 2000
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has
the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
the gate voltage in case of high junction temperature like applying over power consumption, over current
etc.
Features
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit Gate
Shut–
down
Circuit
D
S
G
LDPAK
1. Gate
2. Drain
3. Source
4. Drain
123
4
123
4
HAF2012(L), HAF2012(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS 16 V
Gate to source voltage VGSS –2.8 V
Drain current ID20 A
Drain peak current ID(pulse)Note1 40 A
Body-drain diode reverse drain current IDR 20 A
Channel dissipation Pch Note2 50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Ta = 25°C
Typical Operation Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Input voltage VIH 3.5 — — V
VIL — — 1.2 V
Input current IIH1 — — 100 µA Vi = 8V, VDS = 0
(Gate non shut down) IIH2 ——50µA Vi = 3.5V, VDS = 0
IIL ——1 µA Vi = 1.2V, VDS = 0
Input current IIH(sd)1 — 0.8 — mA Vi = 8V, VDS = 0
(Gate shut down) IIH(sd)2 — 0.35 — mA Vi = 3.5V, VDS = 0
Shut down temperature Tsd — 175 — °C Channel temperature
Gate operation voltage VOP 3.5 — 13 V
HAF2012(L), HAF2012(S)
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain current ID1 10——A V
GS = 3.5V, VDS = 2V
Drain current ID2 — — 10 mA VGS = 1.2V, VDS = 2V
Drain to source breakdown
voltage V(BR)DSS 60——V I
D
= 10mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS 16——V I
G
= 100µA, VDS = 0
Gate to source breakdown
voltage V(BR)GSS –2.8 — — V IG = –100µA, VDS = 0
Gate to source leak current IGSS1 — — 100 µAV
GS = 8V, VDS = 0
IGSS2 ——50µAV
GS = 3.5V, VDS = 0
IGSS3 ——1 µAV
GS = 1.2V, VDS = 0
IGSS4 — — –100 µAV
GS = –2.4V, VDS = 0
Input current (shut down) IGS(op)1 — 0.8 — mA VGS = 8V, VDS = 0
IGS(op)2 — 0.35 — mA VGS = 3.5V, VDS = 0
Zero gate voltege drain
current IDSS — — 250 µAV
DS = 50 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.25 V ID = 1mA, VDS = 10V
Static drain to source on state
resistance RDS(on) —5065mΩI
D
= 10A, VGS = 4V Note3
Static drain to source on state
resistance RDS(on) —3043mΩI
D
= 10A, VGS = 10V Note3
Forward transfer admittance |yfs| 6 12 — S ID = 10A, VDS = 10V Note3
Output capacitance Coss — 630 — pF VDS = 10V , VGS = 0
f = 1 MHz
Turn-on delay time td(on) — 7.5 — µsI
D
= 5A, VGS = 5V
Rise time tr—29—µsR
L
= 6Ω
Turn-off delay time td(off) —34—µs
Fall time tf—26—µs
Body–drain diode forward
voltage VDF — 1.0 — V IF = 20A, VGS = 0
Body–drain diode reverse
recovery time trr — 110 — ns IF = 20A, VGS = 0
diF/ dt =50A/µs
Over load shut down tos1 — 1.8 — ms VGS = 5V, VDD = 12V
operation time Note4 tos2 — 0.7 — ms VGS = 5V, VDD = 24V
Note: 3. Pulse test
4. Include the junction temperature rise of the over loaded condition.
• See characteristic curve of HAF2001.
HAF2012(L), HAF2012(S)
4
Main Characteristics
80
60
40
20
0
Channel Dissipation Pch (W)
50 100 150 200
Case Temperature Tc (°C)
Power vs. Temperature Derating
HAF2012(L), HAF2012(S)
5
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (L)
—
—
1.4 g
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.2 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.59 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.27 ± 0.2
As of January, 2001
Unit: mm
HAF2012(L), HAF2012(S)
6
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(1)
—
—
1.3 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.15
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
3.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
HAF2012(L), HAF2012(S)
7
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
LDPAK (S)-(2)
—
—
1.35 g
10.2 ± 0.3
1.27 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0 + 0.3
– 0.5
4.44 ± 0.21.3 ± 0.2
0.1 + 0.2
– 0.1
0.4 ± 0.1
0.86 + 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.2 ± 0.2
5.0+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
As of January, 2001
Unit: mm
HAF2012(L), HAF2012(S)
8
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
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failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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