© 2004 IXYS All rights reserved 1 - 3
MCC 161
MCD 161
448
Symbol Conditions Maximum Ratings
ITRMS TVJ = TVJM 300 A
ITAVM TC = 85°C; 180° sine 165 A
ITSM TVJ = 45°C; t = 10 ms (50 Hz) 6000 A
VR = 0 t = 8.3 ms (60 Hz) 6400 A
TVJ = TVJM; t = 10 ms (50 Hz) 5250 A
VR = 0 t = 8.3 ms (60 Hz) 5600 A
I2dt TVJ = 45°C; t = 10 ms (50 Hz) 180000 A2s
VR = 0 t = 8.3 ms (60 Hz) 170000 A2s
TVJ = TVJM; t = 10 ms (50 Hz) 137000 A2s
VR = 0 t = 8.3 ms (60 Hz) 128000 A2s
(di/dt)cr TVJ = TVJM; repetitive, IT = 500 A 150 A/µs
f = 50 Hz; tP = 200 µs;
VD = 2/3 VDRM;
IG = 0.5 A; non repetitive, IT = ITAVM 500 A/µs
diG/dt = 0.5 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 100 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM;t
P = 30 µs 120 W
IT = ITAVM;t
P = 500 µs 60 W
PGAV 8W
VRGM 10 V
TVJ -40...125 °C
TVJM 125 °C
Tstg -40...125 °C
VISOL 50/60 Hz, RMS; t = 1 min 3000 V~
IISOL < 1 mA; t = 1 s 3600 V~
MdMounting torque (M6) 2.25-2.75 Nm
Terminal connection torque (M6) 4.5-5.5 Nm
Weight Typical including screws 125 g
ITRMS = 2x300 A
ITAVM = 2x165 A
VRRM = 2000-2200 V
VRSM VRRM Type
VDSM VDRM
VV
2100 2000 MCC 161-20io1 MCD 161-20io1
2300 2200 MCC 161-22io1 MCD 161-22io1
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
Features
• International standard package
•Direct Copper Bonded Al2O3-ceramic
base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
Applications
• Motor control
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Contactless switches
Advantages
• Space and weight savings
• Simple mounting
• Improved temperature and power
cycling
• Reduced protection circuits
High Voltage Thyristor Module
1
2
367
54
IXYS reserves the right to change limits, test conditions and dimensions
MCD
MCC 36 71 542
31542
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© 2004 IXYS All rights reserved 2 - 3
MCC 161
MCD 161
448
Symbol Conditions Characteristic Values
IRRM, IDRM VR = VRRM;T
VJ = TVJM 40 mA
VTIT = 300A; TVJ = 25°C 1.36 V
VT0 For power-loss calculations only (TVJ = TVJM) 0.8 V
rT1.6 mΩ
VGT VD= 6 V; TVJ = 25°C 2 V
TVJ = -40°C 2.6 V
IGT VD= 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 200 mA
VGD VD = 2/3VDRM;T
VJ = TVJM 0.25 V
IGD VD = 2/3VDRM;T
VJ = TVJM 10 mA
ILTVJ = 25°C; VD = 6 V; tP = 30 µs 200 mA
diG/dt = 0.45 A/µs; IG = 0.45 A
IHTVJ = 25°C; VD = 6 V; RGK = ∞150 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
diG/dt = 0.5 A/µs; IG = 0.5 A
tqTVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs typ. 150 µs
dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs
QSTVJ = TVJM 550 µC
IRM -di/dt = 50 A/µs; IT = 300 A 235 A
RthJC per thyristor; DC current 0.155 K/W
per module 0.078 K/W
RthJK per thyristor; DC current 0.225 K/W
per module 0.113 K/W
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.6 mm
aMaximum allowable acceleration 50 m/s2
Dimensions in mm (1 mm = 0.0394")
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385,
Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
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© 2004 IXYS All rights reserved 3 - 3
MCC 161
MCD 161
448
0 25 50 75 100 125
0.5 1.50.0 1.0 2.0
0
50
100
150
200
250
300
350
400
450
500
IT,
IF
VT, VF
Vs
A
0.001 0.01 0.1 1
0
1000
2000
3000
4000
5000
6000
t
ITSM
A
TVJ = 25°C
TVJ = 125°C
110
104
105
106
I2t
t
ms
A2s
TVJ = 45°C
TVJ = 125°C
IFAVM TA
Ptot
0 100 200 300 400
0
200
400
600
800
1000
1200
1400
1600
1800
2000
°C
W
A
Ptot
0 50 100 150 200 250
0
40
80
120
160
200
240
280
320
360
400
0 25 50 75 100 125
W
A
RthKA K/W
0.1
0.2
0.3
0.5
0.8
1.5
2
180° sin
120°
60°
30°
DC
IDAVM TA
RthKA K/W
0.02
0.04
0.06
0.1
0.15
0.20
0.30
TC
0 25 50 75 100 125
0
50
100
150
200
250
300
350
A
IFAVM 180° sin
120°
60°
30°
DC
TVJ = 45°C
TVJ = 125°C
80 % VRRM
50 Hz
t
ZthJC
10-3 10-2 10-1 100101102
0.0
0.1
0.2
0.3
K/W
s
DC
180°
120°
60°
30°
°C
°C
Fig 3: Forward current vs. voltage
drop per thyristor/diode
Fig. 4: Surge overload current
ITSM, IFSM = f(t)
Fig. 5: I2t versus time per diode
Fig. 8: Maximum forward current at case
temperature ITAV M , IDAVM = f (TC,d)
Fig. 6: Power dissipation vs. on-state current and ambient
temperature (per thyristor/diode)
Fig. 7: Power dissipation vs. direct output current and
ambient temperature (three phase rectifier bridge)
Fig. 9: Transient thermal impedance junction to case ZthjC
at various conduction angles
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