MCC 161 MCD 161 ITRMS = 2x300 A ITAVM = 2x165 A VRRM = 2000-2200 V High Voltage Thyristor Module VRSM VDSM VRRM VDRM V V 2100 2300 2000 2200 MCC 3 6 Type 3 6 7 2 MCC 161-20io1 MCD 161-20io1 MCC 161-22io1 MCD 161-22io1 Conditions ITRMS ITAVM TVJ = TVJM TC = 85C; 180 sine ITSM TVJ = 45C; VR = 0 (di/dt)cr 54 2 1 Symbol I2dt 7 1 MCD 3 1 Features * International standard package * Direct Copper Bonded Al2O3-ceramic base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins 300 165 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 6000 6400 A A TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 5250 5600 A A TVJ = 45C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 180000 170000 A2s A2 s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 137000 128000 A2s A2 s 150 A/s 500 A/s * Motor control * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Contactless switches Advantages (dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM RGK = ; method 1 (linear voltage rise) 100 V/s PGM TVJ = TVJM; IT = ITAVM; PGAV 120 60 8 W W W VRGM 10 V TVJ TVJM Tstg -40...125 125 -40...125 C C C 3000 3600 V~ V~ 2.25-2.75 4.5-5.5 Nm Nm 125 g tP = 30 s tP = 500 s VISOL 50/60 Hz, RMS; t = 1 min IISOL < 1 mA; t=1s Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws 4 54 2 Maximum Ratings TVJ = TVJM; repetitive, IT = 500 A f = 50 Hz; tP = 200 s; VD = 2/3 VDRM; IG = 0.5 A; non repetitive, IT = ITAVM diG/dt = 0.5 A/s 5 Applications * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits IXYS reserves the right to change limits, test conditions and dimensions (c) 2004 IXYS All rights reserved 448 Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated 1-3 http://store.iiic.cc/ MCC 161 MCD 161 Symbol Conditions IRRM, IDRM VR = VRRM; Characteristic Values VT IT = 300A; TVJ = 25C VT0 rT 40 mA 1.36 V For power-loss calculations only (TVJ = TVJM) 0.8 1.6 V m VGT VD = 6 V; IGT VD = 6 V; 2 2.6 150 200 V V mA mA VGD IGD VD = 2/3VDRM; TVJ = TVJM VD = 2/3VDRM; TVJ = TVJM 0.25 10 V mA IL TVJ = 25C; VD = 6 V; tP = 30 s diG/dt = 0.45 A/s; IG = 0.45 A 200 mA IH TVJ = 25C; VD = 6 V; RGK = 150 mA tgd TVJ = 25C; VD = 1/2 VDRM diG/dt = 0.5 A/s; IG = 0.5 A 2 s tq TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 s dv/dt = 20 V/s; IT = 160 A; -di/dt = 10A/s typ. 150 s QS IRM TVJ = TVJM -di/dt = 50 A/s; IT = 300 A 550 235 C A RthJC per thyristor; DC current per module per thyristor; DC current per module 0.155 0.078 0.225 0.113 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 RthJK dS dA a TVJ = TVJM TVJ TVJ TVJ TVJ = 25C = -40C = 25C = -40C Creeping distance on surface Creepage distance in air Maximum allowable acceleration Fig. 1 Gate trigger characteristics Dimensions in mm (1 mm = 0.0394") Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 (c) 2004 IXYS All rights reserved 448 Fig. 2 Gate trigger delay time 2-3 http://store.iiic.cc/ MCC 161 MCD 161 500 106 6000 ITSM IT, 450 A IF 400 50 Hz 80 % VRRM 2 It 5000 2 As A 350 4000 300 TVJ = 45C TVJ = 45C 105 3000 250 200 TVJ = 125C 2000 150 TVJ = 125C 100 TVJ = 125C 1000 TVJ = 25C 50 0 0.001 0 0.0 0.5 1.0 1.5 V 2.0 104 0.01 s 0.1 VT, VF ms 10 1 1 t t Fig 3: Forward current vs. voltage drop per thyristor/diode Fig. 5: I2t versus time per diode Fig. 4: Surge overload current ITSM, IFSM = f(t) 2000 400 RthKA K/W RthKA K/W W 360 0.1 320 0.2 Ptot W 1800 0.02 0.04 1600 0.06 0.3 Ptot 280 1400 0.5 0.8 240 DC 180 sin 120 60 30 120 0.20 1000 2 160 0.15 1200 1.5 200 0.1 0.30 800 600 80 400 40 200 0 0 0 50 0 100 150 200 A 250 IFAVM 25 50 C 100 TA 75 0 125 Fig. 6: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode) 350 A 100 200 300 400 A 0 IDAVM 25 50 C 100 TA 75 125 Fig. 7: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge) 0.3 300 IFAVM K/W DC 180 sin 120 60 30 250 200 0.2 ZthJC 150 0.1 100 30 60 120 180 DC 50 0 0 25 50 C 100 75 125 0.0 10-3 10-2 10-1 100 TC 102 t Fig. 9: Transient thermal impedance junction to case ZthjC at various conduction angles 448 Fig. 8: Maximum forward current at case temperature ITAVM, IDAVM = f (TC,d) s 101 (c) 2004 IXYS All rights reserved 3-3 http://store.iiic.cc/