Small Signal Transistor
RoHS Device
Page 1
REV:A
Features
-NPN silicon epitaxial planar transistor for
switching and amplifier application.
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
MMBT2222A-G (NPN)
Maximum Ratings and Thermal Characteristics
O
(at Ta=25 C unless otherwise noted)
Dimensions in inches and (millimeter)
QW-BTR30
Comchip Technology CO., LTD.
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
O
Power dissipation on FR-5 board(1), TA=25 C
O
Derate above 25 C
O
Power dissipation on aluminum substrate(2), TA=25 C
O
Derate above 25 C
Thermal resistance, junction FR-5 board
to ambient air Aluminum substrate
Junction temperature
Storage temperature range
UnitsSymbolParameter
VCBO
VCEO
VEBO
IC
Ptot
Ptot
RθJA
TJ
TSTG
SOT-23
3
1 2
0.119(3.00)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.083(2.10)
0.066(1.70)
0.044(1.10)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)
0.002(0.05)
0.103(2.60)
0.086(2.20)
0.006(0.15) max
0.007(0.20) min
Value
75
40
6.0
600
225
1.9
300
2.4
556
417
150
-55 to +150
V
V
V
mA
mW
O
mW/ C
mW
O
mW/ C
OC/mW
OC
OC
Notes:
1. FR-5=1.0×0.75×0.062 in.
2. Alumina=0.4×0.3×0.024 in. 99.5% alumina.
Electrical Characteristics (@TA=25°C unless otherwise noted)
Comchip Technology CO., LTD.
Page 2
REV:A
Small Signal Transistor
QW-BTR30
DC current gain
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Collector cut-off current
Collector cut-off current
Base cut-off current
Emitter cut-off current
Current gain-bandwidth product
Output capacitance
Input capacitance
Noise figure
Input impedance
Small signal current gain
Voltage feedback ratio
Output admittance
Collector base time constant
Delay time (see fig.1)
Rise time (see fig.1)
Storage time (see fig.2)
Fall time (see fig.2)
UnitsSymbolParameter Min.Conditions
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
O
VCE=10V, IC=10mA, TA=-55 C
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=10μA, IE=0
IC=10mA, IB=0
IC=10μA, IC=0
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VEB=3V, VCE=60V
VCB=60V, IE=0
O
VCB=50V, IE=0, TA=125 C
VEB=3V, VCE=60V
VEB=3VDC, IC=0
VCE=20V, IC=20mA, f=100MHz
VCB=10V, f=1MHz, IE=0
VEB=0.5V, f=1MHz, IC=0
VCE=10V, IC=100μA, RS=1kΩ,
f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
VCE=10V, IC=1mA, f=1kHz
VCE=10V, IC=10mA, f=1kHz
IE=20mA, VCB=20V, f=31.8MHz
IB1=15mA, IC=150mA, VCC=30V,
VBE=-0.5V
IB1=15mA, IC=150mA, VCC=30V,
VBE=-0.5V
IB1=IB2=15mA, IC=150mA,
VCC=30V
IB1=IB2=15mA, IC=150mA,
VCC=30V
Max.
hFE
V(BR)CBO
VCEsat
ICEX
ICBO
IBL
IEBO
fT
Cobo
Cibo
NF
hie
hfe
hre
hoe
rb'CC
td
tr
ts
tf
V(BR)CEO
V(BR)EBO
VBEsat
35
50
75
35
100
40
50
75
40
6
0.6
300
2
0.25
50
75
5
25
300
0.3
1
1.2
2
10
10
10
20
100
8
25
4
8
1.25
300
375
8
4
35
200
150
10
25
225
60
V
V
V
V
V
nA
nA
μA
nA
nA
MHz
pF
pF
dB
kΩ
-4
×10
μS
pS
nS
nS
nS
nS
Switching time equivalent test circuit
Comchip Technology CO., LTD.
Page 3
REV:A
Small Signal Transistor
QW-BTR30
Figure 1. Turn-on Time
1.0 to 100μS, duty cycle=2%
+16V
0
-2V
<2nS
+30V
200Ω
1kΩCs* <10pF
Scope rise time<4nS
*Total shunt capacitance of test jig,
connectors and oscilloscope
1.0 to 100μS, duty cycle=2%
+16V
0
-14V
<20nS
+30V
200Ω
1kΩCs* <10pF
-4V
Figure 2. Turn-off Time
