s
BSZ900N15NS3 G
OptiMOSTM3 Power-Transistor
Package
Marking
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current IDTC=25 °C 13 A
TC=100 °C 8
Pulsed drain current2) ID,pulse TC=25 °C 52
Avalanche energy, single pulse EAS ID=10 A, RGS=25 Ω30 mJ
Gate source voltage VGS ±20 V
Power dissipation Ptot TC=25 °C 38 W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1)J-STD20 and JESD22
VDS 150 V
RDS(on),max 90 mΩ
ID13 A
Product Summary
Type Package Marking
BSZ900N15NS3 G PG-TSDSON-8 900N15N
PG-TSDSON-8
Rev. 2.1 page 1 2011-05-16
BSZ900N15NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 3.3 K/W
RthJA 6 cm2 cooling area3) --60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=1 mA 150 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=20 µA 234
Zero gate voltage drain current IDSS VDS=120 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=120 V, VGS=0 V,
Tj=125 °C - 10 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=10 V, ID=10 A -7490
mΩ
VGS=8 V, ID=5 A -7591
Gate resistance RG- 1.7 - Ω
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=10 A 612-S
Values
Thermal resistance,
junction - ambient
3) see figure 3
Rev. 2.1 page 2 2011-05-16
BSZ900N15NS3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 380 510 pF
Output capacitance Coss -4661
Reverse transfer capacitance Crss -3-
Turn-on delay time td(on) -4-ns
Rise time tr-4-
Turn-off delay time td(off) -8-
Fall time tf-3-
Gate Char
g
e Characteristics4)
Gate to source charge Qgs - 1.9 - nC
Gate to drain charge Qgd - 0.9 -
Switching charge Qsw - 1.7 -
Gate charge total Qg- 5.0 7
Gate plateau voltage Vplateau - 5.2 - V
Output charge Qoss VDD=75 V, VGS=0 V -1217nC
Reverse Diode
Diode continous forward current IS- - 13 A
Diode pulse current IS,pulse --52
Diode forward voltage VSD VGS=0 V, IF=13 A,
Tj=25 °C - 0.9 1.2 V
Reverse recovery time trr -59 ns
Reverse recovery charge Qrr - 123 - nC
4) See figure 16 for gate charge parameter definition
VR=75 V, IF=5 A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=75 V,
f=1 MHz
VDD=75 V, VGS=10 V,
ID=5 A, RG=1.6 Ω
VDD=75 V, ID=5 A,
VGS=0 to 10 V
Rev. 2.1 page 3 2011-05-16
BSZ900N15NS3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
101
100
10-1
tp [s]
ZthJC [K/W]
0
5
10
15
20
25
30
35
40
0 40 80 120 160
TC [°C]
Ptot [W]
0
5
10
15
0 40 80 120 160
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
DC
103
102
101
100
10-1
102
101
100
10-1
VDS [V]
ID [A]
Rev. 2.1 page 4 2011-05-16
BSZ900N15NS3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
5 V 5.5 V
6 V
8 V
10 V
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0481216
ID [A]
RDS(on) [mΩ]
25 °C
150 °C
0
4
8
12
16
20
24
28
02468
VGS [V]
ID [A]
0
5
10
15
20
0102030
ID [A]
gfs [S]
4.5 V
5 V
5.5 V
6 V
7 V
10 V
0
5
10
15
20
25
30
0123
VDS [V]
ID [A]
Rev. 2.1 page 5 2011-05-16
BSZ900N15NS3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=10 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
20
40
60
80
100
120
140
160
180
200
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
20 µA
200 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
Ciss
Coss
Crss
103
102
101
100
0 20406080100
VDS [V]
C [pF]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
1
10
100
0 0.5 1 1.5 2
VSD [V]
IF [A]
Rev. 2.1 page 6 2011-05-16
BSZ900N15NS3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=5 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
30 V
75 V
120 V
0
2
4
6
8
10
0246
Qgate [nC]
VGS [V]
135
140
145
150
155
160
165
170
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
25 °C
100 °C
125 °C
1
10
100
1 10 100 1000
tAV [µs]
IAS [A]
Rev. 2.1 page 7 2011-05-16
BSZ900N15NS3 G
Package Outline: PG-TSDSON-8
Rev. 2.1 page 8 2011-05-16
BSZ900N15NS3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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contact the nearest Infineon Technologies Office (www.infineon.com).
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
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Rev. 2.1 page 9 2011-05-16
