1
TO-220F
Item Symbol Ratings Unit
Drain-source voltage VDS 500
Continuous drain current ID±6
Pulsed drain current ID(puls] ±24
Gate-source voltage VGS ±30
Repetitive or non-repetitive IAR *2 6
Maximum Avalanche Energy EAS *1 115
Maximum Drain-Source dV/dt dVDS/dt *4 20
Peak Diode Recovery dV/dt dV/dt *3 5
Max. power dissipation PD Ta=25°C 2.16
Tc=25°C 32
Operating and storage Tch +150
temperature range Tstg
Isolation Voltage VISO *5 2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3518-01MR FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=3A VGS=10V
ID=3A VDS=25V
VCC=300V ID=3A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 3.91
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=6A
VGS=10V
L=5.9mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
kVrms
500
3.0 5.0
25
250
10 100
1.15 1.50
2.5 5
430 675
60 90
2.5 4.5
10 15
5 7.5
20 30
5 7.5
15 22.5
6.5 10.5
2.5 4.5
61.00 1.50
0.5
1.7
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<=
<=
<*4 VDS 500V *5 t=60sec, f=60Hz
<
=
*1 L=5.90mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch 150°C
=
<
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2
0246810
0
1
2
3
4
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
6.0V 6.5V
7.0V
VGS=5.5V
0.01 0.1 1 10
0.1
1
10
100
gfs [S]
ID [A]
Typical Transconductance
Characteristics
2SK3518-01MR FUJI POWER MOSFET
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80µs Pulse test,Tch=25°C
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0 2 4 6 8 10 12 14 16 18 20 22
0
1
2
3
4
5
6
7
8
9
10 20V 10V
7.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
0.01
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=3A,VGS=10V
0 25 50 75 100 125 150
0
10
20
30
40
50
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [°C]
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3
10-1 100101102
100
101
102
Typical Switching Characteristics vs. ID
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 5 10 15 20 25
0
2
4
6
8
10
12
14
16
18
20
Qg [nC]
Typical Gate Charge Characteristics
VGS [V]
400V
250V
Vcc= 100V
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th) [V]
Tch [°C]
2SK3518-01MR FUJI POWER MOSFET
VGS=f(Qg):ID=3A, Tch=25°C
IF=f(VSD):80µs Pulse test,Tch=25°C
t=f(ID):Vcc=300V, VGS=10V, RG=10Ω
VGS(th)=f(Tch):VDS=VGS,ID=250µA
10-1 100101102103
1p
10p
100p
1n
10n
C [F]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
0.1
1
10
100
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
0 25 50 75 100 125 150
0
100
200
300
400
500
IAS=2.4A
IAS=6A
IAS=3.6A
EAS [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
EAS=f(s tarting Tc h):Vc c=50V
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4
2SK3518-01MR FUJI POWER MOSFET
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maxim um T ransient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tc h=25°C,Vcc=50V
Avalanche Current I AV [A]
tAV [sec]
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