1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The
low loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
1.2 Features
nSpecially designed for low loss RF switching up to 1 GHz
1.3 Applications
nVarious RF switching applications such as:
uPassive loop through for VCR tuner
uTransceiver switching
1.4 Quick reference data
[1] IF= diode forward current.
BF1108; BF1108R
Silicon RF switches
Rev. 04 — 29 May 2008 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Lins(on) on-state insertion loss RS=R
L=50Ω;f≤1 GHz;
VSK =V
DK =0V; I
F=0mA [1] --2dB
ISLoff off-state isolation RS=R
L=50Ω; f ≤1 GHz;
VSK =V
DK =5V; I
F=1mA 30--dB
RDSon drain-source on-state
resistance VKS =0V; I
D= 1 mA - 12 20 Ω
VGS(p) gate-source pinch-off
voltage VDS =1V; I
D=20µA-−3−4V
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 2 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
2. Pinning information
[1] Drain and source are interchangeable.
3. Ordering information
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BF1108 (SOT143B)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4 drain [1]
BF1108R (SOT143R)
1 FET gate; diode anode
2 diode cathode
3 source [1]
4 drain [1]
21
34
001aai042
43
12
21
43
001aai043
34
21
Table 3. Ordering information
Type number Package
Name Description Version
BF1108 - plastic surface-mounted package; 4 leads SOT143B
BF1108R - plastic surface-mounted package; reverse pinning;
4 leads SOT143R
Table 4. Marking
Type number Marking code
BF1108 NGp
BF1108R NHp
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 3 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
5. Limiting values
6. Thermal characteristics
[1] Soldering point of FET gate and diode anode lead.
7. Static characteristics
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
FET
VDS drain-source voltage - 3 V
VSD source-drain voltage - 3 V
VDG drain-gate voltage - 7 V
VSG source-gate voltage - 7 V
IDdrain current - 10 mA
Diode
VRreverse voltage - 35 V
IFforward current - 100 mA
FET and diode
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 150 °C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resistance from junction
to solder point [1] 250 K/W
Table 7. Static characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
FET
V(BR)GSS gate-source breakdown
voltage VDS =0V; I
GS = 0.1 mA 7 - - V
VGS(p) gate-source pinch-off voltage VDS =1V; I
D=20µA- −3−4V
IDSX drain cut-off current VGS =−5 V; VDS =2V--10µA
IGSS gate leakage current VGS =−5 V; VDS = 0 V - - 100 nA
RDSon drain-source on-state
resistance VGS =0V; I
D= 1 mA - 12 20 Ω
Diode
VFforward voltage IF= 10 mA - - 1 V
IRreverse current VR=25V --50nA
VR= 20 V; Tamb =75°C--1µA
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 4 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
8. Dynamic characteristics
[1] IF= diode forward current.
[2] Ci is the series connection of CGS and CGK; Co is the series connection of CGD and CGK.
[3] Guaranteed on AQL basis; inspection level S4, AQL 1.0.
Table 8. Dynamic characteristics
Common cathode; T
amb
= 25
°
C.
Symbol Parameter Conditions Min Typ Max Unit
FET and diode
Lins(on) on-state insertion loss VSK =V
DK =0V; I
F=0mA [1]
RS=R
L=50Ω; f ≤1 GHz - - 2 dB
RS=R
L=50Ω; f = 1 GHz - 1.3 - dB
RS=R
L=75Ω; f ≤1 GHz - - 3 dB
ISLoff off-state isolation VSK =V
DK =5V; I
F=1mA
RS=R
L=50Ω; f ≤1 GHz 30 - - dB
RS=R
L=50Ω; f = 1 GHz - 38 - dB
RS=R
L=75Ω; f ≤1 GHz 30 - - dB
RDSon drain-source on-state
resistance VKS =0V; I
D= 1 mA - 12 20 Ω
Ciinput capacitance f = 1 MHz [2]
VSK =V
DK =5V; I
F=1mA - 1 - pF
VSK =V
DK =0V; I
F= 0 mA - 0.65 0.9 pF
Cooutput capacitance f = 1 MHz [2]
VSK =V
DK =5V; I
F=1mA - 1 - pF
VSK =V
DK =0V; I
F= 0 mA - 0.65 0.9 pF
Diode
Cddiode capacitance f = 1 MHz; VR= 0 V - 1.1 - pF
rDdiode forward resistance IF= 2 mA; f = 100 MHz [3] - - 0.7 Ω
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 5 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
VSK = VDK = 0 V; RS = RL = 50 Ω; IF = 0 mA (diode
forward current).
Measured in test circuit see Figure 3.
VSK = VDK = 5 V; RS = RL = 50 Ω; IF = 1 mA (diode
forward current).
Measured in test circuit see Figure 3.
Fig 1. On-state insertion loss as a function of
frequency; typical values Fig 2. Off-state isolation as a function of frequency;
typical values
On-state: V = 0 V.
Off-state: V = 5 V.
Fig 3. Test circuit
0 400 1200
0
−1
−3
−4
−2
800
mgs357
f (MHz)
Lins(on)
0 400 1200
0
−40
−60
−20
800
mgs358
f (MHz)
ISLoff
mbl028
1 nF 1 nF
V
V1 nF
1 nF
50 Ω
input 50 Ω
output
4.7 kΩ
47 kΩ
BF1108/BF1108R
100 kΩ
100 kΩ
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 6 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
9. Package outline
Fig 4. Package outline SOT143B
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.45
0.15 0.55
0.45
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143B 04-11-16
06-03-16
0 1 2 mm
scale
Plastic surface-mounted package; 4 leads SOT143B
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
21
34
b1
bp
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 7 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
Fig 5. Package outline SOT143R
UNIT A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
mm 1.1
0.9
A1
max
0.1
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
HEywvQ
2.5
2.1 0.55
0.25 0.45
0.25
e
1.9
e1
1.7
Lp
0.1 0.10.2
bp
0.48
0.38
DIMENSIONS (mm are the original dimensions)
SOT143R SC-61AA 04-11-16
06-03-16
0 1 2 mm
scale
Plastic surface-mounted package; reverse pinning; 4 leads SOT143R
D
HE
EA
B
vMA
X
A
A1
Lp
Q
detail X
c
y
wM
e1
e
B
12
43
b1
bp
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 8 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
10. Abbreviations
11. Revision history
Table 9. Abbreviations
Acronym Description
AQL Acceptable Quality Level
MOSFET Metal-Oxide Semiconductor Field-Effect Transistor
RF Radio Frequency
S4 Special inspection level 4
VCR VideoCassette Recorder
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BF1108_BF1108R_4 20080529 Product data sheet - BF1108_1108R_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Symbol notation has been adapted to comply with the current guidelines of NXP
Semiconductors.
BF1108_1108R_3
(9397 750 06477) 19991118 Product data sheet - BF1108_1108R_2
BF1108_1108R_2
(9397 750 06073) 19990819 Product data sheet - BF1108_1108R_1
BF1108_1108R_1
(9397 750 05899) 19990517 Preliminary specification - -
BF1108_BF1108R_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 29 May 2008 9 of 10
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BF1108; BF1108R
Silicon RF switches
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 May 2008
Document identifier: BF1108_BF1108R_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7 Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
8 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
