DM2G50SH12A Mar. 2008 High Power SPT+ & Lugged Type IGBT Module Description Equivalent Circuit and Package DAWIN'S IGBT 7DM-1 Package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT modules are ideally suited for power inverters, motors drives and other applications where switching losses are significant portion of the total losses. Equivalent Circuit 6 7 Features 5 High Speed Switching BVCES = 1200V Low Conduction Loss : VCE(sat) = 1.8 V (typ.) Fast & Soft Anti-Parallel FWD Short circuit rated : Min. 10uS at TC=100 Reduced EMI and RFI Isolation Type Package 4 Package : 7DM-1 Series Applications Motor Drives, High Power Inverters, Welding Machine, Induction Heating, UPS , CVCF, Robotics , Servo Controls Please see the package out line information Absolute Maximum Ratings @ Tj=25(Per Leg) Symbol Parameter Conditions Ratings Unit VCES Collector-Emitter Voltage - 1200 V VGES Gate-Emitter Voltage - 20 V IC Collector Current TC = 25 75 A TC = 80 50 A - 100 A ICM (1) Pulsed Collector Current IF Diode Continuous Forward Current TC = 100 50 A IFM Diode Maximum Forward Current - 100 A TSC Short Circuit Withstand Time TC = 100 10 uS PD Maximum Power Dissipation TC = 25 400 W Tj Operating Junction Temperature - -40 ~ 150 Tstg Storage Temperature Range - -40 ~ 125 Viso Isolation Voltage AC 1 minute 2500 V Mounting screw Torque :M6 - 4.0 N.m Power terminals screw Torque :M5 - 2.0 N.m Copyright@Dawin Electronics Corp. All right reserved 1/6 DM2G50SH12A Mar. 2008 Electrical Characteristics of IGBT @ TC=25 (unless otherwise specified) Symbol Parameter Conditions BVCES C - E Breakdown Voltage VGE = 0V , IC = 1.0mA BVCES/ Temperature Coeff. of TJ Breakdown Voltage VGE(th) Values Unit Typ. Max. 1200 - - V VGE = 0V , IC = 1.0mA - 0.6 - V/ G - E threshold voltage IC =2.0mA , VCE = VGE 5 - 8 V ICES Collector cutoff Current VCE = 1200V , VGE = 0V - - 1.0 mA IGES G - E leakage Current VGE =20V - - 200 nA VCE(sat) Collector to Emitter IC=50A, VGE=15V @TC= 25 - 1.8 2.5 V saturation voltage IC=50A, VGE=15V @TC=100 - 2.0 - V Cies Input capacitance VGE = 0V , f = 1 - 4.29 - nF Coes Output capacitance VCE = 25V - 0.3 - nF Cres Reverse transfer capacitance - 0.2 - nF td(on) Turn on delay time VCC = 600V , IC = 50A - 270 - nS Turn on rise time VGE = 15V - 60 - nS Turn off delay time RG = 18.0 - 480 - nS Turn off fall time Inductive Load=60nH - 60 - nS tr td(off) tf Min. Eon Turn on Switching Loss - 6.0 - mJ Eoff Turn off Switching Loss - 3.7 - mJ Ets Total Switching Loss - 9.7 - mJ Tsc Short Circuit Withstand Time 10 - - uS VCC = 600V, VGE = 15V RG =18.0 @TC = 100 Qg Total Gate Charge VCC = 600V - 610 - nC Qge Gate-Emitter Charge VGE = 15V - 35 - nC Qgc Gate-Collector Charge IC = 50A - 240 - nC Copyright@Dawin Electronics Corp. All right reserved 2/6 DM2G50SH12A Mar. 2008 Electrical Characteristics of FRD @ TC=25 (unless otherwise specified) Symbol VFM trr Irr Qrr Parameter Values Conditions Diode Forward Voltage IF=50A Min. Typ. Max. Tc =25 - 1.5 2.5 Tc =100 - 1.6 - Diode Reverse IF=50A, VR=600V Tc =25 - 120 - Recovery Time di/dt= -200A/uS Tc =100 - 140 - Diode Peak Reverse Tc =25 - 20 - Recovery Current Tc =100 - 30 - Diode Reverse Tc =25 - 1100 - Recovery Charge Tc =100 - 6300 - Unit V nS A nC Thermal Characteristics and Weight Symbol Parameter Conditions Values Min. Typ. Max. Unit RJC Junction-to-Case(IGBT Part, Per 1/2 Module) - - 0.3 /W RJC Junction-to-Case(DIODE Part, Per 1/2 Module) - - 0.6 /W RCS Case-to-Sink ( Conductive grease applied) 0.05 - - /W Weight Weight of Module - - 200 g Copyright@Dawin Electronics Corp. All right reserved 3/6 DM2G50SH12A Mar. 2008 Performance Curves 150 20V 150 Common Emitter TC=25 15V Collector Current, IC [A] Collector Current, IC [A] 125 12V 10V 100 75 50 25 12V 100 75 50 10V VGE=8V 0 0 2 4 0 6 2 4 6 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output characteristics Fig 2. Typical Output characteristics 60 150 TC=25 125 50 Load Current [A] TC=125 100 75 50 40 30 20 Duty cycle = 50% TC=125 Power Dissipation = 55W 10 25 0 0 0 1 2 3 0.1 4 1 Collector - Emitter Voltage, VCE [V] 20 20 Collector - Emitter Voltage, VCE [V] 16 12 8 100A IC=25A 50A 0 0 4 8 12 16 100 Fig 4. Load Current vs. Frequency Common Emitter TC=25 4 10 Frequency [KHz] Fig 3. Typical Saturation Voltage characteristics Collector - Emitter Voltage, VCE [V] 15V 20V 125 25 VGE=8V 0 Collector Current, IC [A] Common Emitter TC=125 20 Common Emitter TC=125 16 12 8 100A 4 IC=25A 50A 0 0 4 8 12 16 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Typical Saturation Voltage vs. VGE Fig 6. Typical Saturation Voltage vs. VGE Copyright@Dawin Electronics Corp. All right reserved 4/6 20 DM2G50SH12A Mar. 2008 20 Gate - Emitter Voltage, VGE [V] 10 Capacitance [pF] Cies Coes 1 Cres Common Emitter VGE=0V, f=1MHZ TC=25 0.1 0 5 10 15 20 25 30 Common Emitter VCE=600V, IC=50A TC=25 10 5 0 35 0 0.1 Collector - Emitter Voltage, VCE [V] 0.4 500 TJ = 150 VGE 15V 0.5 0.6 TJ 150 PD = f(Tc) 400 45 30 15 300 200 100 0 0 0 20 40 60 80 100 120 140 160 0 20 40 Fig 9. rated Current vs. Case Temperature 80 100 120 140 160 Fig 10. Power Dissipation vs. Case Temperature 1 Forward Current, IF [A] 150 0.1 0.01 0.001 1.E-05 60 Tc [ ] Tc [ ] Thermal Response Zthjc [ /W] 0.3 Gate Charge, Qg [nC] PD [ W ] Ic [ A ] 0.2 Fig 8. Gate Charge characteristics 75 60 VCC=800V 15 Fig 7. Capacitance characteristics VCC=600V IGBT : DIODE : TC=25 1.E-04 1.E-03 1.E-02 1.E-01 TC=25 125 TC=125 100 75 50 25 0 0 1.E+00 Rectangular Pulse Duration Time [sec] 1 2 3 Forward Drop Voltage, VF [V] Fig 11. Transient Thermal Impedance Fig 12. Forward characteristics Copyright@Dawin Electronics Corp. All right reserved 5/6 4 DM2G50SH12A Mar. 2008 Package Out Line Information 7DM-1 930.3 M5 DP9 Dimensions in mm 800.3 230.5 18.50.2 120.2 10.05 LABEL PLATE 50.3 16.50.2 5 4 350.5 120.5 2.80.05 900.5 320.5 Copyright@Dawin Electronics Corp. All right reserved 6/6 6.10.5 15.50.2 3 40.3 170.5 60.2 D W 220.5 9.80.2 1 Bolt Depth 6 7 14.50.3 350.5 2 40.3 6.4 0.2 Mounting Hole MAX 31 230.5