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Document No. 70-0175-02 www.psemi.com ©2005 Peregrine Semic onduct or Corp. All ri ghts res erved.
NDA required for full version: Contact s al es@ psemi.com
The PE4263 SP6T RF UltraCMOS™ Switch
addresses the specific design needs of the
Quad-Band GSM Handset Antenna Switch
Module Market. On-chip CMOS decode logic
facilitates three-pin low voltage CMO S control.
High ESD tolerance of 1500 V at all ports, no
blocking capacitor requirements and on-chip
SAW filter over-voltage protection devices
make this the ultimate in integration and
ruggedness.
The PE4263 UltraCMOS™ RF Switch is
manufactured in Peregrine’s patented Ultra
Thin Silicon (UTSi®) CMOS process, offering
the performance of GaAs with the economy
and integration of conventional CMOS.
Product Specification
SP6T UltraCMOS™ 2.6 V Switch
100 – 3000 MHz
Product Description
Figure 1. Functional Diagram
Figure 2. Die Top View
PE4263 DIE
Features
ANT TX1
TX2
GND
GND
RX1
GND
RX2
GND
RX3
GND
RX4
GND
GND VDD V3 GND V2 V1 GND
GND
RX1
RX2
RX3
RX4
TX1
TX2
CMOS
Control/Driver
and ESD
V1 V2 V3
• Three pin CMOS logic control with
integral decoder/driver
• Low TX insertion loss: 0.55 dB at 900
MHz, 0.65 dB at 1900 MHz
• TX – RX Isolation of 48 dB at 900 MHz,
40 dB at 1900 MHz
• Low harmonics: 2fo = -85 dBc and
3fo = -72 dBc
• 1500 V HBM ESD tolerance all ports
• 41 dBm P1dB
• No blocking capacitors required
Product Specific ation
PE4263
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©2005 Peregrine Semic onduct or Corp. All ri ghts res erved. Document No. 70-0175-02 UltraCM O S™ RFIC Solu ti o ns
NDA required for full version: c ontac t s al es@ psemi.com
Table 1. Electrical Specifications @ +25 °C, VDD = 2.6 V (ZS = ZL = 50 )
Parameter Conditions Typical Units
Operational Frequency MHz
Insertion Loss
ANT - TX - 850 / 900 MHz
ANT - TX - 1800 / 1900 MHz
ANT - RX - 850 / 900 MHz
ANT - RX - 1800 / 1900 MHz
0.55
0.65
0.90
1.00
dB
dB
dB
dB
Isolation
TX - RX - 850 / 900 MHz
TX - RX - 1800 / 1900 MHz
TX - TX - 850 / 900 MHz
TX - TX - 1800 / 1900 MHz
ANT - TX - 850 / 900 MHz
ANT - TX - 1800 / 1900 MHz
48
40
29
25
31
25
dB
dB
dB
dB
dB
dB
Return Loss 850 / 900 MHz
1800 / 1900 MHz 22
23 dB
2nd Harmonic 35 dBm TX Input - 850 / 900 MHz
33 dBm TX Input - 1800 / 1900 MHz -85
-81 dBc
3rd Harmonic 35 dBm TX Input - 850 / 900 MHz
33 dBm TX Input - 1800 / 1900 MHz -72
-66 dBc
Switching Time (10-90%) (90-10%) RF 2 µs
TX1
PE4263
Die
ANT
TX2
RX1
RX2
V
DD
V3
V2
V1
GND
GND
GND
GND
GND
RX3
GND
GND
GND
GND
RX4
GND
1
2
3
4
5
678910
11 12
13
14
15
16
17
18
19
20
Figure 3. Pin Configuration (Top View)
Table 2. Pin Descriptions
Pin No. Pin Name Description
12 ANT RF Common – Antenna
22 TX1 RF I/O - TX1
31 GND Ground (Requires two bond wi res)
42 TX2 RF I/O – TX2
51 GND Ground
61 GND Ground
7 VDD Supply
8 V3 Switch control input, CMOS logic level
91 GND Ground
10 V2 Switch control input , CMOS l ogic level
11 V1 Switch control input , CMOS l ogic level
121 GND Ground
131 GND Ground
142 RX4 RF I/O – RX4
151 GND Ground
162 RX3 RF I/O – RX3
171 GND Ground
182 RX2 RF I/O – RX2
191 GND Ground
202 RX1 RF I/O – RX1
Notes: 1. Bond wires should be physically short and connected to ground plane
for best performance.
2. Blocking capacitors needed only when non-zero DC voltage present.
Product Specific ation
PE4263
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Document No. 70-0175-02 www.psemi.com ©2005 Peregrine Semic onduct or Corp. All ri ghts res erved.
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Symbol Parameter/Conditions Min Max Units
VDD Power supply voltage -0.3 4.0 V
VI Voltage on any input -0.3 VDD+
0.3 V
TST Storage temperature range -65 +150 °C
TOP Operating temperature range -40 +85 °C
PIN TX input power (50 )1 +38 dBm
RX input power (50 )1 +23
VESD
ESD Voltage (HBM, MIL_STD
883 Method 3015.7) 1500 V
ESD Voltage (MM, JEDEC,
JESD22-A114-B) 100 V
ESD Voltage (CDM, JE DE C,
JESD22-C101-A) 2000 V
ESD Voltage at ANT Port
(IEC 61000-4-2) 1700 V
Table 3. Absolute Maximum Ratings
Electrostatic Discharge (ESD) Precautions
When handl ing thi s UltraCMOS™ device, observe
the same precaut i ons t hat you would use with ot her
ESD-sensitive devices. Although this device
contains c ircu itr y t o prot ect it fr om damage due t o
ESD, precautions should be taken to av oid
exceeding t he specified rating.
Latch-Up Avoidance
Unli ke c onventional CMOS devices, Ult raCM OS™
devices are immune to latch-up.
Table 4. DC Electrical Specifications
Table 5. Truth Table
Note: 1. Max RF specified with VDD appli ed
Parameter Min Typ Max Units
VDD Supply Voltage 2.4 2.6 2.8 V
IDD Power Supply Current
(VDD = 2.6V) 13 20 µA
Control Voltage Hi gh 0.7 x VDD V
Control Voltage Low 0.3 x VDD V
Path V3 V2 V1
ANT – RX1 0 0 0
ANT – RX2 0 0 1
ANT – RX3 0 1 0
ANT – RX4 0 1 1
ANT - TX1 1 0 x
ANT - TX2 1 1 x
Order Code Die ID Description Package Shipping Method
4263-92 C9797_3 PE4263-DIE-D Film Frame Wafer (Gross Die / Wafer Quantity)
4263-98 C9797_3 P E4263-DIE-400G Waffle Pack 400 Dice / Waffle Pack
4263-10 C9797_3 P E4263-DIE-1H Evaluation Kit 1/ box
Table 6. Ordering Information
Absolute Maximum Ratings are those values
listed in the above table. Exceeding these values
may cause permanent device damage.
Functional operation should be restricted to the
limits in th e DC Electrical Specif ications table.
Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Product Specific ation
PE4263
Page 4 of 4
©2005 Peregrine Semic onduct or Corp. All ri ghts res erved. Document No. 70-0175-02 UltraCM O S™ RFIC Solu ti o ns
NDA required for full version: c ontac t s al es@ psemi.com
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For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data
sheet contains design target specifications for product
development. Specifications and features may change in
any manner without notice.
Preliminary Specification
The data sheet contains preliminary data. Additional data
may be added at a later date. Peregrine reserves the right
to change specifications at any time without notice in order
to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine
decides to change the specifications , Peregrine will notify
customers of the intended changes by issuing a DCN
(Document Change Notice).
The information in this data sheet is believed to be reliable.
However, Peregrine assumes no liability for the use of this
information. Use shall be entirely at the user’s own risk.
No patent rights or licenses to any circuits described in this
data sheet are implied or granted to any third party.
Peregrine’s products are not designed or intended for use in
devices or systems intended for surgical implant, or in other
applications intended to support or sustain life, or in any
application in which the failure of the Peregrine product could
create a situation in which personal injury or death might occur.
Peregrine assumes no liability for damages, including
consequential or incidental damages, arising out of the use of
its products in such applications.
The Peregrine name, logo, and UTSi are registered trademarks
and UltraCMOS is a trademark of Peregrine Semiconductor
Corp.
South Asia Pacific
Peregrine Semiconductor
28G, Times Square,
No. 500 Zhangyang Road,
Shanghai, 200122, P.R. China
Tel: +86-21-5836-8276
Fax: +86-21-5836-7652
