AUTOMOTIVE GRADE Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dual N and P Channel MOSFET Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Lead-Free, RoHS Compliant Automotive Qualified * S1 Package Type AUIRF7309Q SO-8 N-CHANNEL MOSFET 1 8 N-CH P-CH 30V -30V 0.05 0.10 4.7A -3.5A D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 VDSS RDS(on) max. P-CHANNEL MOSFET ID Top View Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number AUIRF7309Q SO-8 AUIRF7309Q G Gate D Drain Standard Pack Form Quantity Tape and Reel 4000 S Source Orderable Part Number AUIRF7309QTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter N-Channel Max. P-Channel ID @ TA = 25C 10 Sec. Pulsed Drain Current, VGS @ 10V 4.7 -3.5 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 4.0 -3.0 ID @ TA = 70C Continuous Drain Current, VGS @ 10V 3.2 -2.4 IDM Pulsed Drain Current 16 -12 PD @TA = 25C Maximum Power Dissipation VGS dv/dt Gate-to-Source Voltage Peak Diode Recovery dv/dt TJ TSTG Operating Junction and Storage Temperature Range Linear Derating Factor Thermal Resistance Symbol RJA Parameter Junction-to-Ambient ( PCB Mount, steady state) 6.9 Units A 1.4 W 0.011 20 W/C -6.0 -55 to + 150 V V/ns C Typ. Max. Units --- 90 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-9-30 AUIRF7309Q Static @ TJ = 25C (unless otherwise specified) Parameter Min. Gate-to-Source Forward Leakage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P 30 -30 --- --- --- --- --- --- 1.0 -1.0 5.2 2.5 --- --- --- --- --- Gate-to-Source Reverse Leakage N-P --- V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VGS(th) Gate Threshold Voltage gfs Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Typ. Max. Units --- --- --- --- 0.032 --- -0.037 --- --- 0.050 --- 0.080 --- 0.10 --- 0.16 --- 3.0 --- -3.0 --- --- --- --- --- 1.0 --- -1.0 --- 25 --- -25 --- 100 --- 100 Conditions VGS = 0V, ID = 250A V VGS = 0V, ID = -250A Reference to 25C, ID = 1mA V/C Reference to 25C, ID = -1mA VGS = 10V, ID = 2.4A VGS = 4.5V, ID = 2.0A VGS = -10V, ID = -1.8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A S VDS = -24V, ID = -1.8A VDS =24V, VGS = 0V VDS = -24V,VGS = 0V A VDS =24V, VGS = 0V ,TJ =125C VDS = -24V,VGS = 0V,TJ =125C VGS = 20V nA VGS = 20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 6.8 11 21 17 22 25 7.7 18 4.0 25 25 2.9 2.9 7.9 9.0 --- --- --- --- --- --- --- --- --- N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch --- --- --- --- --- --- 6.0 520 440 180 200 72 93 --- --- --- --- --- --- --- Min. Typ. nC N-Channel ID = 2.6A, VDS = 16V,VGS = 4.5V P-Channel ID = -2.2A,VDS = -16V,VGS = -4.5V N-Channel VDD = 10V,ID = 2.6A,RG = 6.0 RD = 3.8 ns nH pF P-Channel VDD = -10V,ID = -2.2A,RG = 6.0 RD = 4.5 Between lead, 6mm(0.25n) from package and center of die contact N-Channel VGS = 0V,VDS = 15V, = 1.0MHz P-Channel VGS = 0V,VDS = -15V, = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Max. Units Conditions N-Ch --- --- 1.8 P-Ch --- --- -1.8 A N-Ch --- --- 16 P-Ch --- --- -12 N-Ch --- --- 1.0 TJ = 25C,IS = 1.8A,VGS = 0V V P-Ch --- --- -1.0 TJ = 25C,IS = -1.8A,VGS = 0V N-Ch --- 47 71 N-Channel ns P-Ch --- 53 80 TJ = 25C ,IF = 2.6A, di/dt = 100A/s N-Ch --- 56 84 P-Channel nC TJ = 25C,IF = -2.2A, di/dt = 100A/s P-Ch 66 99 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 23) N-Channel ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS, TJ 150C. P-Channel ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 2 2015-9-30 N-Channel Fig. 1 Typical Output Characteristics TJ = 25C Fig. 3 Typical Transfer Characteristics 3 AUIRF7309Q Fig. 2 Typical Output Characteristics TJ = 150C Fig. 4 Normalized On-Resistance vs. Temperature 2015-9-30 N-Channel Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 AUIRF7309Q Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area 2015-9-30 AUIRF7309Q N-Channel Fig 10a. Switching Time Test Circuit Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Fig 11a. Gate Charge Test Circuit 5 Qgd Qgodr Fig 11b. Basic Gate Charge Waveform 2015-9-30 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case P-Channel Fig. 12 Typical Output Characteristics TJ = 25C Fig. 14 Typical Transfer Characteristics 6 AUIRF7309Q Fig. 13 Typical Output Characteristics TJ = 150C Fig. 15 Normalized On-Resistance vs. Temperature 2015-9-30 P-Channel Fig 16. Typical Capacitance vs. Drain-to-Source Voltage Fig. 18 Typical Source-to-Drain Diode Forward Voltage 7 AUIRF7309Q Fig 17. Typical Gate Charge vs. Gate-to-Source Voltage Fig 19. Maximum Safe Operating Area 2015-9-30 AUIRF7309Q P-Channel Fig 20. Maximum Drain Current vs. Case Temperature Fig 21a. Switching Time Test Circuit Fig 22a. Gate Charge Test Circuit 8 Fig 21b. Switching Time Waveforms Fig 22b. Basic Gate Charge Waveform 2015-9-30 N and P-Channel AUIRF7309Q Fig 23. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (R) Fig 24. Peak Diode Recovery dv/dt Test Circuit for N & P-Channel HEXFET Power MOSFETs 9 2015-9-30 AUIRF7309Q SO-8 Package Outline (Dimensions are shown in millimeters (inches) D 8 6 7 6 M AX M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 A1 0.25 [ .010] C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M IN 5 A IN C H ES D IM B y 0.10 [ .004] B 8X L F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8X c 7 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information 10 2015-9-30 AUIRF7309Q SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 11 2015-9-30 AUIRF7309Q Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SO-8 MSL1 N CH: Class M2 (+/- 150V) P CH: Class M2(+/- 150V) AEC-Q101-002 N CH: Class H1A (+/- 500V) P CH: Class H0 (+/- 250V) AEC-Q101-001 N CH: Class C5 (+/- 2000V) P CH: Class C5 (+/- 2000V) AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/28/2014 9/30/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1 Updated data sheet with new IR corporate template Updated datasheet with corporate template Corrected ordering table on page 1. 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Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 12 2015-9-30