Ordering number : EN2510B 2SC4134 Bipolar Transistor http://onsemi.com 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA Applications * Power supplies, relay drivers, lamp drivers Features * * * * High breakdown voltage and large current capacity Adoption FBET, MBIT processes Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit 120 V 100 V 6 V 1 A 2 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 1 2 2.3 7.5 0.5 3 2.3 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1 2 2.5 0.8 0.8 1.6 0.6 1.2 1.2 5.5 0.5 0.85 0.85 0.7 3 0 to 0.2 1.2 2.3 2SC4134S-TL-E 2SC4134T-TL-E 0.5 1.5 1.5 4 7.0 5.5 4 2.3 6.5 5.0 2SC4134S-E 2SC4134T-E 0.5 7.0 2.3 6.5 5.0 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector TP-FA TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 C4134 RANK 1 LOT No. TL 3 Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/9 2SC4134 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25C Unit 0.8 W 10 W 150 C --55 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON Time Storage Time tstg tf Fall Time Ratings min typ max Unit VCB=100V, IE=0A 100 nA VEB=4V, IC=0A 100 nA VCE=5V, IC=100mA fT Cob Output Capacitance Conditions 100* 400* VCE=10V, IC=100mA 120 VCB=10V, f=1MHz IC=400mA, IB=40mA 8.5 IC=400mA, IB=40mA IC=10A, IE=0A IC=1mA, RBE= IE=10A, IC=0A pF 0.1 0.4 V 0.85 1.2 V 120 V 100 V 6 V 80 See specified Test Circuit. MHz ns 850 ns 50 ns * : The 2SC4134 is classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 IB2 OUTPUT INPUT PW=20s DC1% RB VR + 50 100F --5V RL + 470F 50V IC=10IB1= --10IB2=400mA Ordering Information Device 2SC4134S-E 2SC4134T-E Package Shipping TP 500pcs./bag TP 500pcs./bag 2SC4134S-TL-E TP-FA 700pcs./reel 2SC4134T-TL-E TP-FA 700pcs./reel memo Pb Free No.2510-2/9 2SC4134 IC -- VCE mA 20mA 15mA 10mA 0.6 5mA 0.4 3mA 2mA 1mA 0.2 IB=0 0 0 1 2 3 1.0mA 200 0.5mA 100 IB=0 0 10 IC -- VBE 30 40 50 ITR03998 hFE -- IC 1000 VCE=5V VCE=5V 7 5 DC Current Gain, hFE 0.8 0.6 0.4 0.2 3 Ta=75C 2 --25C 25C 100 7 5 3 2 0 10 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 7 0.01 1.2 5 3 2 25C Ta=--25C 75C 5 3 5 7 2 0.1 3 5 Collector Current, IC -- A 7 2 1.0 ITR04004 2 3 5 7 1.0 3 IC / IB=10 5 3 2 100 7 Ta=75C 5 25 C --25C 2 3 5 7 0.1 2 3 5 7 1.0 2 ITR04006 Cob -- VCB 100 VCE=10V 2 ITR04002 Collector Current, IC -- A f T -- IC 3 0.1 7 2 7 0.01 3 2 7 VCE(sat) -- IC 3 7 0.01 5 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 7 3 Collector Current, IC -- A IC / IB=10 1.0 2 ITR04000 VBE(sat) -- IC 10 f=1kHz 7 2 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 20 Collector-to-Emitter Voltage, VCE -- V ITR03996 Ta=7 5C 25C --25C Collector Current, IC -- A 1.5mA 300 5 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 400 0 4 Collector-to-Emitter Voltage, VCE -- V 1.2 2.0mA 2.5 A 30m A 25m 0.8 IC -- VCE 500 Collector Current, IC -- mA Collector Current, IC -- A 1.0 100 7 5 3 2 5 3 2 10 7 5 3 10 2 7 0.01 2 3 5 7 0.1 2 Collector Current, IC -- A 3 5 7 1.0 ITR04007 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 2 100 ITR04008 No.2510-3/9 2SC4134 ASO ICP=2.0A 1 10 ms m s IC=1.0A 1.0 7 5 op n Ta = 5C tio =2 era 0.1 7 5 ms 2 100 DC 3 Tc Collector Current, IC -- A 2 25 C 3 2 Ta=25C Single Pulse 0.01 7 5 5 7 1.0 2 PC -- Ta 12 Collector Dissipation, PC -- W 3 10 8 6 4 2 No heat sink 0.8 0 3 5 7 10 2 3 5 7 100 2 ITR04009 Collector-to-Emitter Voltage, VCE -- V 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR04010 No.2510-4/9 2SC4134 Taping Specification 2SC4134S-TL-E, 2SC4134T-TL-E No.2510-5/9 2SC4134 Outline Drawing 2SC4134S-TL-E, 2SC4134T-TL-E Land Pattern Example Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2510-6/9 2SC4134 Bag Packing Specification 2SC4134S-E, 2SC4134T-E No.2510-7/9 2SC4134 Outline Drawing 2SC4134S-E, 2SC4134T-E Mass (g) Unit 0.315 mm * For reference No.2510-8/9 2SC4134 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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