BFR183W - Infineon Technologies AG

2007-03-30

BFR183W

NPN Silicon RF Transistor*

• For low noise, high-gain broadband amplifiers at

collector currents from 2 mA to 30 mA

• fT = 8 GHz, F = 0.9 dB at 900 MHz

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type Marking Pin Configuration Package

BFR183W RHs 1=B 2=E 3=C SOT323

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage VCEO 12 V

Collector-emitter voltage VCES 20

Collector-base voltage VCBO 20

Emitter-base voltage VEBO 2

Collector current IC65 mA

Base current IB5

Total power dissipation2)

TS ≤ 56 °C

Ptot 450 mW

Junction temperature T

150 °C

Ambient temperature T

-65 ... 150

Storage temperature Tst

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point3) RthJS ≤ 210 K/W

1Pb-containing package may be available upon special request

2TS is measured on the collector lead at the soldering point to the pcb

3For calculation of RthJA please refer to Application Note Thermal Resistance

2007-03-30

BFR183W

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CEO 12 - - V

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

ICES - - 100 µA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICBO - - 100 nA

Emitter-base cutoff current

VEB = 1 V, IC = 0

IEBO - - 1 µA

DC current gain-

IC = 15 mA, VCE = 8 V, pulse measured

hFE 70 100 140 -

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BFR183W

Electrical Characteristics at T

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Transition frequency

IC = 25 mA, VCE = 8 V, f = 500 MHz

fT6 8 - GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz, VBE = 0 ,

emitter grounded

Ccb - 0.46 0.7 pF

Collector emitter capacitance

VCE = 10 V, f = 1 MHz, VBE = 0 ,

base grounded

Cce - 0.24 -

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz, VCB = 0 ,

collector grounded

Ceb - 1 -

Noise figure

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 900 MHz

IC = 5 mA, VCE = 8 V, ZS = ZSopt,

f = 1.8 GHz

0.9

1.4

Power gain, maximum stable1)

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

Gms - 18.5 - dB

Power gain, maximum available2)

IC = 15 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 1.8 GHz

Gma - 12 - dB

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 900 MHz

IC = 15 mA, VCE = 8 V, ZS = ZL = 50 Ω,

f = 1.8 MHz

|S21e|2

9.5

1Gms = |S21 / S12|

2Gma = |S21e / S12e| (k-(k²-1)1/2),

2007-03-30

BFR183W

SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):

Transistor Chip Data:

NF = 0.80799 -

ISE = 16.818 fA

NR = 0.99543 -

ISC = 1.3559 fA

IRB = 0.43801 mA

RC = 0.20486 Ω

MJE = 0.45354 -

VTF = 0.50905 V

CJC = 460.11 fF

XCJC = 0.053823 -

VJS = 0.75 V

EG = 1.11 eV

TNOM 300 K

BF = 115.98 -

IKF = 0.14562 A

BR = 10.016 -

IKR = 0.013483 A

RB = 2.5426 Ω

RE = 1.3435 -

VJE = 1.0792 V

XTF = 0.36823 -

PTF = 0 deg

MJC = 0.3 -

CJS = 0 fF

XTB = 0 -

FC = 0.54852

IS = 1.0345 fA

VAF = 14.772 V

NE = 1.2149 -

VAR = 3.4276 V

NC = 0.85331 -

RBM = 1.0112 Ω

CJE = 23.077 fF

TF = 22.746 ps

ITF = 1.8773 mA

VJC = 1.1967 V

TR = 1.0553 ns

MJS = 0-

XTI = 3-

All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil- und Satellitentechnik (IMST)

Package Equivalent Circuit:

LBI = 0.57 nH

LBO = 0.4 nH

LEI = 0.43 nH

LEO = 0.5 nH

LCI = 0nH

LCO = 0.41 nH

CBE = 61 fF

CCB =101 fF

E = 175 fF

For examples and ready to use parameters

please contact your local Infineon Technologies

distributor or sales office to obtain a Infineon

Technologies CD-ROM or see Internet:

http://www.infineon.com

Valid up to 6GHz

2007-03-30

BFR183W

Total power dissipation Ptot = ƒ(TS)

0 20 40 60 80 100 120 °C 150

100

150

200

250

300

350

400

500

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

-1

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2007-03-30

BFR183W

Package SOT323

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15

+0.1

-0.05

0.3

+0.1

±0.1

0.9

±0.2

-0.05

0.650.65

3x 0.1

0.1 MIN.

0.1

0.2 A

0.2

2.15 1.1

2.3

Pin 1

2005, June

Date code (YM)

BCR108W

Type code

0.6

0.8

1.6

0.65 0.65

Manufacturer

2007-03-30

BFR183W

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office ( www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.