AMMC-6222
7-21GHz GaAs High Linearity Low Noise Amplifier
Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222
2000µm x 800µm Die Size
Single Positive Bias Supply
Selectable Output Power / Linearity
No Negative Gate Bias
Microwave Radio systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and 802.20 WiMax)
WLL and MMDS loops
Commercial grade military
Description
A
vago Technologies AMMC-6222 is an easy-to-use
broadband, high gain, high linearity Low Noise
A
mplifier that operates from 7 GHz to 21GHz.
The wide band and unconditionally stable performance
makes this MMIC ideal as a primary or sub-sequential
low noise block or a transmitter or LO driver.
The MMIC is fabricated using PHEMT technology to
provide exceptional low noise, gain and power
performance.
Lifecycle statu s: Active
Features
Applications
1
Chip Size: 800 μm x 2000μm (31.5 x 78.74 mils)
Chip Size Tolerance: ±10 μm (±0.4 mils)
Chip Thickness: 100 ± 10 μm (4 ±0.4 mils)
Pad Dimensions: 100 x 100 μm (4 x 4 mils)
Features
• 2000μm x 800μm Die Size
• Single Positive Bias Supply
• Selectable Output Power / Linearity
• No Negative Gate Bias
Specications (Vdd = 4.0V, Idd = 120mA)
• RF Frequencies: 7 - 21 GHz
• High Output IP3: 29dBm
• High Small-Signal Gain: 25dB
• Typical Noise Figure: 2.4dB
• Input, Output Match: -10dB
Applications
• Microwave Radio systems
• Satellite VSAT, DBS Up/Down Link
• LMDS & Pt-Pt mmW Long Haul
• Broadband Wireless Access (including 802.16 and
802.20 WiMax)
• WLL and MMDS loops
• Commercial grade military
Note:
1. This MMIC uses depletion mode pHEMT devices.
Description
Avago Technologies AMMC-6222 is an easy-to-use
broadband, high gain, high linearity Low Noise Amplier
that operates from 7 GHz to 21GHz. The wide band and
unconditionally stable performance makes this MMIC
ideal as a primary or sub-sequential low noise block or
a transmitter or LO driver. The MMIC has 3 gain stages
and requires a 4V, 120mA power supply for optimal
performance. It has a selectable pin to switch between
low and high current, corresponding with low and
high output power and linearity. DC-block capacitors
are integrated at the input and output stages. Since
this MMIC covers several bands, it can reduce part
inventory and increase volume purchase options The
MMIC is fabricated using PHEMT technology to provide
exceptional low noise, gain and power performance. The
backside of the chip is both RF and DC ground which
helps simplify the assembly process and reduce assembly
related performance variations and cost.
AMMC-6222
7 to 21 GHz GaAs High Linearity Low Noise Amplier
Data Sheet
Attention:
Observe precautions for
handling electrostatic
sensitive devices.
ESD Machine Model (60V)
ESD Human Body Model (150V)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control
2
Absolute Maximum Ratings (1)
Parameters/Condition Symbol Unit Max
Drain to Ground Voltage Vdd V 5.5
Gate-Drain Voltage Vgd V -10
Drain Current Idd mA 170
RF CW Input Power Max Pin dBm 10
Max channel temperature Tch C +150
Storage temperature Tstg C -65 +150
Maximum Assembly Temp Tmax C 260 for 20s
(1) Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at
an ambient temperature of 25°C unless noted otherwise.
DC Specications/ Physical Properties (2)
Parameter and Test Condition Symbol Unit Min Typ Max
Drain Supply Current under any RF power drive and temp. (Vd=4.0 V) Idd mA 80 120 160
Drain Supply Voltage Vd V 3 4 5
Thermal Resistance(3) θjc °C/W 31.4
(2) Ambient operational temperature TA=25°C unless noted
(3) Channel-to-backside Thermal Resistance (Tchannel = 34°C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25°C calculated from
measured data.
AMMC-6222 RF Specications
TA= 25°C, Vdd = 4.0 V, Idd=120mA, Zo=50 W
Parameters and Test Conditions Symbol Unit
Freq
(GHz)
High Output
Power Conguration
Low Output
Power Conguration
Min Typical Max Min Typical Max
Drain Current Idd mA 120 95
Small-Signal Gain[4] Gain dB 9, 12, 17 20 26 24
Noise Figure into 50W [4] NF dB 9 2.7 2.8 2.4
12 2.5 2.8 2.4
17 2.7 2.8 2.4
Output Power at 1dB Gain Compression P-1dB dBm 13 15.5 15
Output Third Order Intercept Point OIP3 dBm 9, 12, 17 26 28 27
Isolation Iso dB -50 -50
Input Return Loss RLin dB -10 -10
Output Return Loss RLout dB -10 -10
(4) All tested parameters guaranteed with measurement accuracy ± 2dB for gain and P1dB, ±0.8dB for NF and ±5dBm for OPI3 in the high output power conguration.
Assembly Techniques
The backside of the MMIC chip is RF ground. For microstrip
applications the chip should be attached directly to
the ground plane (e.g. circuit carrier or heatsink) using
electrically conductive epoxy [1]
For best performance, the topside of the MMIC should be
brought up to the same height as the circuit surrounding it.
This can be accomplished by mounting a gold plated metal
shim (same length as the MMIC) under the chip which is of
correct thickness to make the chip and adjacent circuit the
same height. The amount of epoxy used for the chip or
shim attachment should be just enough to provide a thin
llet around the bottom perimeter of the chip. The ground
plane should be free of any residue that may jeopardize
electrical or mechanical attachment.
RF connections should be kept as short as reasonable to
minimize performance degradation due to undesirable
series inductance. A single bond wire is normally sucient
for signal connections, however double bonding with
0.7mil gold wire will reduce series inductance. Gold
thermo-sonic wedge bonding is the preferred method for
wire attachment to the bond pads. The recommended wire
bond stage temperature is 150°c ± 2°c.
Caution should be taken to not exceed the Absolute
Maximum Rating for assembly temperature and time.
The chip is 100um thick and should be handled with care.
This MMIC has exposed air bridges on the top surface and
should be handled by the edges or with a custom collet (do
not pick up the die with a vacuum on die center). Bonding
pads and chip backside metallization are gold.
This MMIC is also static sensitive and ESD precautions
should be taken
For more detailed information see Avago Technolgies’
application note #54 “GaAs MMIC assembly and handling
guidelines”
Notes:
[1] Ablebond 84-1 LMI silver epoxy is recommended
Ordering Information:
AMMC-6222-W10 = 10 devices per tray
AMMC-6222-W50 = 50 devices per tray
Figure 22. Bond Pad Locations
0
0
390
800
0800 1280 1400 2000
800
390
0
1740
650
130
1610
RFin RFout
VD1 VD2
680
250 250
SELECT
