Products > RF for Mobile, WLAN, mmW > mmW & microWave Devices > Amplifiers > AMMC-6222 AMMC-6222 7-21GHz GaAs High Linearity Low Noise Amplifier Description Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC is fabricated using PHEMT technology to provide exceptional low noise, gain and power performance. Lifecycle status: Active Features 2000m x 800m Die Size Single Positive Bias Supply Selectable Output Power / Linearity No Negative Gate Bias Applications Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax) WLL and MMDS loops Commercial grade military AMMC-6222 7 to 21 GHz GaAs High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies AMMC-6222 is an easy-to-use broadband, high gain, high linearity Low Noise Amplifier that operates from 7 GHz to 21GHz. The wide band and unconditionally stable performance makes this MMIC ideal as a primary or sub-sequential low noise block or a transmitter or LO driver. The MMIC has 3 gain stages and requires a 4V, 120mA power supply for optimal performance. It has a selectable pin to switch between low and high current, corresponding with low and high output power and linearity. DC-block capacitors are integrated at the input and output stages. Since this MMIC covers several bands, it can reduce part inventory and increase volume purchase options The MMIC is fabricated using PHEMT technology to provide exceptional low noise, gain and power performance. The backside of the chip is both RF and DC ground which helps simplify the assembly process and reduce assembly related performance variations and cost. * * * * 2000m x 800m Die Size Single Positive Bias Supply Selectable Output Power / Linearity No Negative Gate Bias Specifications (Vdd = 4.0V, Idd = 120mA) * * * * * RF Frequencies: 7 - 21 GHz High Output IP3: 29dBm High Small-Signal Gain: 25dB Typical Noise Figure: 2.4dB Input, Output Match: -10dB Applications * * * * Microwave Radio systems Satellite VSAT, DBS Up/Down Link LMDS & Pt-Pt mmW Long Haul Broadband Wireless Access (including 802.16 and 802.20 WiMax) * WLL and MMDS loops * Commercial grade military Note: 1. This MMIC uses depletion mode pHEMT devices. Chip Size: 800 m x 2000m (31.5 x 78.74 mils) Chip Size Tolerance: 10 m (0.4 mils) Chip Thickness: 100 10 m (4 0.4 mils) Pad Dimensions: 100 x 100 m (4 x 4 mils) Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (60V) ESD Human Body Model (150V) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control Absolute Maximum Ratings (1) Parameters/Condition Symbol Unit Max Drain to Ground Voltage Vdd V 5.5 Gate-Drain Voltage Vgd V -10 Drain Current Idd mA 170 RF CW Input Power Max Pin dBm 10 Max channel temperature Tch C +150 Storage temperature Tstg C -65 +150 Maximum Assembly Temp Tmax C 260 for 20s (1) Operation in excess of any of these conditions may result in permanent damage to this device. The absolute maximum ratings for Vdd, Vgd, Idd and Pin were determined at an ambient temperature of 25C unless noted otherwise. DC Specifications/ Physical Properties (2) Parameter and Test Condition Symbol Unit Min Typ Max Drain Supply Current under any RF power drive and temp. (Vd=4.0 V) Idd mA 80 120 160 Drain Supply Voltage Vd V 3 4 5 Thermal Resistance(3) jc C/W 31.4 (2) Ambient operational temperature TA=25C unless noted (3) Channel-to-backside Thermal Resistance (Tchannel = 34C) as measured using infrared microscopy. Thermal Resistance at backside temp. (Tb) = 25C calculated from measured data. AMMC-6222 RF Specifications TA= 25C, Vdd = 4.0 V, Idd=120mA, Zo=50 W Freq High Output Power Configuration (GHz) Min Parameters and Test Conditions Symbol Unit Drain Current Idd mA Gain dB 9, 12, 17 NF dB 9 2.7 2.8 2.4 12 2.5 2.8 2.4 2.7 2.8 2.4 Small-Signal Gain[4] Noise Figure into 50W [4] 20 17 Output Power at 1dB Gain Compression P-1dB dBm Output Third Order Intercept Point OIP3 dBm Isolation Iso Input Return Loss Output Return Loss Typical Low Output Power Configuration Max Min Typical 120 95 26 24 13 15.5 15 26 28 27 dB -50 -50 RLin dB -10 -10 RLout dB -10 -10 9, 12, 17 Max (4) All tested parameters guaranteed with measurement accuracy 2dB for gain and P1dB, 0.8dB for NF and 5dBm for OPI3 in the high output power configuration. Assembly Techniques The backside of the MMIC chip is RF ground. For microstrip applications the chip should be attached directly to the ground plane (e.g. circuit carrier or heatsink) using electrically conductive epoxy [1] For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. This can be accomplished by mounting a gold plated metal shim (same length as the MMIC) under the chip which is of correct thickness to make the chip and adjacent circuit the same height. The amount of epoxy used for the chip or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. A single bond wire is normally sufficient for signal connections, however double bonding with 0.7mil gold wire will reduce series inductance. Gold thermo-sonic wedge bonding is the preferred method for wire attachment to the bond pads. The recommended wire bond stage temperature is 150c 2c. Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. The chip is 100um thick and should be handled with care. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet (do not pick up the die with a vacuum on die center). Bonding pads and chip backside metallization are gold. This MMIC is also static sensitive and ESD precautions should be taken For more detailed information see Avago Technolgies' application note #54 "GaAs MMIC assembly and handling guidelines" Notes: [1] Ablebond 84-1 LMI silver epoxy is recommended Ordering Information: AMMC-6222-W10 = 10 devices per tray AMMC-6222-W50 = 50 devices per tray VD1 800 0 680 VD2 800 1280 2000 1400 800 650 390 390 RFin RFout 250 250 0 0 0 130 1610 1740 SELECT Figure 22. Bond Pad Locations