Silicon PIN Chips Rev. V21 Features Anode Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP(R) Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed Low Loss High Isolation RoHS Compliant Description MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP(R). The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP(R) diodes are available in a wide range of voltages, up to 3,000 volts, which are capable of controlling kilowatts of RF power. Many of MACOM 's silicon PIN diode chips are also available in several different package styles. Please refer to the "Packaged PIN Diode Datasheet" for case style availability and electrical specifications located on the MACOM website. Also for high voltage, high power devices refer to MA4PK2000. Full Area Cathode Absolute Maximum Ratings1 TAMB = +25C (Unless otherwise specified) Parameter Absolute Maximum Forward Current (IF) Per P/N Rs vs. I Graph Reverse Voltage (VR) Per Specification Table Power Dissipation (W) 175C - TambientC Theta Operating Temperature -55C to +175C Storage Temperature -55C to +200C Junction Temperature +175C Mounting Temperature +320C for 10 seconds 1. Exceeding these limits may cause permanent damage to the chip 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Silicon PIN Chips Rev. V21 Low Capacitance PIN Specification @ TAMB = +25C Nominal Characteristics Part Number Max. Max. Rev. Max. Cap. Series Res. Carrier Lifetime1 Voltage3 1 MHz 500 MHz Reverse Recovery Time 2 VR <10 A VDC Cj @ -10 V pF RS @ 10 mA TL S TRR S MA4P161-134 100 0.10 1.50 150 MA4P203-134 100 0.15 1.50 MA4P7493-134 150 0.05 MADP-000165-01340W 200 MADP-000135-01340W 200 Anode I Region Length Theta Diameter Chip Size Chip Thk. m C/W 0.5 mils 0.5 mils 0.5 mils 15 13 65 3.5 13X13 6 150 25 13 75 3.1 13X13 6 1.80 80 8 19 60 3.8 13X13 6.5 0.06 2.50 200 20 19 30 1.8 13X13 7 0.15 1.20 440 44 19 30 3.1 13x13 10 Chip Size Chip Thk. 2 mils 1 mils Notes: 1. Nominal carrier life time (TL ) specified at IF = + 10 mA , IREV = - 6 mA. 2. Nominal reverse recovery time specified at IF = + 20 mA , IREV = - 200 mA. 3. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10 A. Attenuator PIN Specification @ TAMB = +25C Nominal Characteristics Series Max. Res. Max. Rev. Max. Cap. Series Res. Carrier 2 100MHz Lifetime1 100MHz 1MHz Part Number Voltage VR <10 A VDC Cj @ -100 V pF RS @ 10 mA TL S MA47416-132 200 0.15 6 2 2000 MA47418-134 200 0.15 3 1 500 Series Anode Res. I Region 100MHz Length Theta Diameter RS @ 10 A RS @ 1 mA 0.5 mils mils C/W 30 4 30 7.5 X7.5 19X19 7 15 2 25 7.5 13X13 7 3 Notes: 1. Nominal carrier life time (TL) specified at IF = + 10 mA, IREV = - 6 mA. 2. Reverse Voltage (VR) is sourced and the resultant reverse leakage current (IR) is measured to be <10 A. 3. Anode top contact is square. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Silicon PIN Chips Rev. V21 CERMACHIP(R) PIN Chips Specification @ TAMB = +25C Unless otherwise noted Unless otherwise noted Max. Series Res. Carrier I Region Lifetime4 Length Theta 100 MHz Max. Rev. Volt.5 Max. Cap. 1 MHz VR < 10 A VDC CJ @ -100 V pF RS @ 100 mA MA4P303-134 200 0.15 @ 10 V 1.5 @ 10 mA2 MA4P404-132 250 0.20 @ 50 V MA4P504-132 500 MA4P505-131 Part Number Nominal Characteristics Anode Dia. Chip size Chip Thk. m C/W 0.5 mils 2.0 mils 1.0 mils 0.3 20 30 3.0 13X13 10.0 0.70 @ 50 mA2 0.6 30 20 6.8 20X20 10.0 0.20 0.60 1 50 20 6.8 20X20 10.0 500 0.35 0.45 2 50 14 13.0 27X27 11.0 MA4P506-131 500 0.70 0.30 3 50 11 15.8 27X27 12.0 MADP-000488-13740W 900 0.16 @ 50V 1.6 @ 50 mA 4 140 45 12.2 23X23 13.5 MA4P604-131 1000 0.30 1.00 3 90 10 17.0 27X27 13.5 MA4P606-131 1000 0.60 0.70 4 90 8 21.0 32X32 14.0 MA4P607-212 1000 1.30 0.40 12 127 4 37.0 62X62 18.5 MA4PK3000-12521 3000 2.90 0.25 @ 500 mA3 60 350 1.5 85.0 172X172 28.0 S Notes: 1. 2. 3. 4. 5. Upon completion of circuit installation, the chip must be covered with a dielectric conformal coating such as SYLGARD 539(R) to prevent voltage arcing. Test Frequency = 500 MHz Test Frequency = 4 MHz Nominal carrier lifetime (TL) specified at IF = +10 mA , IREV = - 6 mA. Minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage current (IREV) is measured to be <10 A. Anode 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Silicon PIN Chips Rev. V21 Typical Series Resistance vs. Forward Current Performance 4 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Silicon PIN Chips Rev. V21 MA4PK3000 (3kV) Chip Reverse Bias Conductance vs. Frequency and 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Silicon PIN Chips Rev. V21 Die Handling and Bonding Information Handling: All semiconductor chips should be handled with care to avoid damage or contamination from perspiration, salts, and skin oils. The use of plastic tipped tweezers or vacuum pickup is strongly recommended for the handling and placing of individual components. Bulk handling should ensure that abrasion and mechanical shock are minimized. Die Attach Surface: Die can be mounted with an 80Au/Sn20, eutectic solder preform, RoHS compliant solders or electrically conductive silver epoxy. The metal RF and D.C. ground plane mounting surface must be free of contamination and should have a surface flatness of < 0.002". Eutectic Die Attachment Using Hot Gas Die Bonder: A work surface temperature of 255oC is recommended. When hot forming gas (95%N/5%H) is applied, the work area temperature should be approximately 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 10 seconds. Eutectic Die Attachment Using Reflow Oven: For recommended reflow profile refer to pages 5 -7 of Application Note 538 "Surface Mounting Instructions", Electrically Conductive Epoxy Die Attachment: A controlled amount of electrically conductive, silver epoxy, approximately 1-2 mils in thickness, should be used to minimize ohmic and thermal resistance. A thin epoxy fillet should be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive epoxy per manufacturer's schedule. Typically 150C for 1 hour. Wire and Ribbon Bonding: The die anode bond pads have a Ti-Pt-Au metallization scheme, with a final gold thickness of 1.0 micron. Thermo-compression or thermo-sonic wedge bonding of either gold wire or ribbon is recommended. A bonder heat stage temperature setting of 200oC, tool tip temperature of 150C and a force of 18 to 50 grams is suggested. Ultrasonic energy may also be used but should be adjusted to the minimum amplitude required to achieve an acceptable bond. Excessive energy may cause the anode metallization to separate from the chip. Automatic ball or wedge bonding may also be used. For more detailed handling and assembly instructions, see Application Note M541, "Bonding and Handling Procedures for Chip Diode Devices". 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: MACOM: MA4P161-134