DATA SH EET
Product specification
Supersedes data of 1999 Feb 01 1999 May 10
DISCRETE SEMICONDUCTORS
BAP50-03
General purpose PIN diode
k
, halfpage
M3D049
1999 May 10 2
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
FEATURES
•Low diode capacitance
•Low diode forward resistance.
APPLICATIONS
•General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD323 small plastic
SMD package.
PINNING
PIN DESCRIPTION
1 cathode
2 anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A8.
handbook, halfpage
12
MAM406
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage −50 V
IFcontinuous forward current −50 mA
Ptot total power dissipation Ts=90°C−500 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
1999 May 10 3
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage IF=50mA −0.95 1.1 V
VRreverse voltage IR=10µA50−−V
I
Rreverse current VR=50V −−100 nA
Cddiode capacitance VR= 0; f = 1 MHz −0.4 −pF
VR= 1 V; f = 1 MHz −0.3 0.55 pF
VR= 5 V; f = 1 MHz −0.2 0.35 pF
rDdiode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 −25 40 Ω
IF= 1 mA; f = 100 MHz; note 1 −14 25 Ω
IF= 10 mA; f = 100 MHz; note 1 −35Ω
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 85 K/W
1999 May 10 4
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
GRAPHICAL DATA
Fig.2 Forward resistance as a function of
forward current; typical values.
f = 100 MHz; Tj=25°C.
handbook, halfpage
103
10
102
1
MGS317
10−210−1110
I
F
(mA)
rD
(Ω)
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
020
V
R
(V)
Cd
(fF)
500
0
100
MGS323
200
300
400
4 8 12 16
Fig.4 Insertion loss (|S21|2) of the diode as a
function of frequency; typical values.
handbook, halfpage
0.5 3
f (GHz)
|S21|2
(dB)
0
−5
−4
MGS319
−3
−2
−1
1
(1)
(2)
(3)
1.5 2 2.5
(1) IF=10mA. (2) IF= 1 mA. (3) IF= 0.5 mA.
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
Fig.5 Isolation (|S21|2) of the diode as a function
of frequency; typical values.
handbook, halfpage
0.5 3
f (GHz)
|S21|2
(dB)
0
−25
−20
MGS316
−15
−10
−5
1 1.5 2 2.5
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
Tamb =25°C.
1999 May 10 5
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD323 98-09-14
0 1 2 mm
scale
SOD323
UNIT bpcDEQv
mm 0.40
0.25
+ 0.05
− 0.05 0.25
0.10 0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3 0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
12
H
E
L
p
A
E
b
p
A
1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
vMA
A
c
(1)
1999 May 10 6
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 10 7
Philips Semiconductors Product specification
General purpose PIN diode BAP50-03
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 64
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Printed in The Netherlands 125004/00/02/pp8 Date of release: 1999 May 10 Document order number: 9397 750 05439
