GWM 120-0075X1 Three phase full Bridge VDSS = 75 V = 110 A ID25 RDSon typ. = 4.0 mW with Trench MOSFETs in DCB isolated high current package L+ G1 S1 G2 S2 G3 G5 S3 S5 L1 L2 L3 G4 G6 S4 S6 Straight leads Surface Mount Device L- Applications MOSFETs Symbol Conditions VDSS TVJ = 25C to 150C Maximum Ratings VGS 75 V 20 V ID25 ID90 TC = 25C TC = 90C 110 85 A A IF25 IF90 TC = 25C (diode) TC = 90C (diode) 110 80 A A Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. RDSon on chip level at VGS = 10 V; ID = 60 A VGS(th) VDS = 20 V; ID = 1 mA IDSS VDS = VDSS; VGS = 0 V IGSS VGS = 20 V; VDS = 0 V Qg Qgs Qgd VGS = 10 V; VDS = 36 V; ID = 25 A td(on) tr td(off) tf Eon Eoff Erecoff RthJC RthJH VGS = 10 V; VDS = 30 V ID = 80 A; RG = 39 inductive load TVJ = 25C TVJ = 125C max. 4.0 7.2 4.9 8.4 mW mW 4 V 1 A mA 0.2 A 2 TVJ = 25C TVJ = 125C TVJ = 125C 0.1 115 30 30 nC nC nC 130 100 500 100 ns ns ns ns 0.20 0.50 0.01 mJ mJ mJ with heat transfer paste (IXYS test setup) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved typ. 1.3 1.0 1.6 AC drives * in automobiles - electric power steering - starter generator * in industrial vehicles - propulsion drives - fork lift drives * in battery supplied equipment Features * MOSFETs in trench technology: - low RDSon - optimized intrinsic reverse diode * package: - high level of integration - high current capability 300 A max. - aux. terminals for MOSFET control - terminals for soldering or welding connections - isolated DCB ceramic base plate with optimized heat transfer * Space and weight savings Package options * 2 lead forms available - straight leads (SL) - SMD lead version (SMD) K/W K/W 20110407d 1-6 GWM 120-0075X1 Source-Drain Diode Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.2 VSD (diode) IF = 80 A; VGS = 0 V 0.9 trr QRM IRM IF = 80 A; -diF/dt = 800 A/s VR = 30 V; TJ = 125C 55 0.9 30 V ns C A Component Symbol Conditions IRMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connections Maximum Ratings TVJ Tstg VISOL IISOL < 1 mA, 50/60 Hz, f = 1 minute FC mounting force with clip Symbol Conditions 300 A -55...+175 -55...+125 C C 1000 V~ 50 - 250 N Characteristic Values min. typ. max. Rpin to chip with heatsink compound 0.6 mW CP coupling capacity between shorted pins and mounting tab in the case 160 pF Weight typ. 25 g IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110407d 2-6 GWM 120-0075X1 Straight Leads GWM 120-0075X1-SL 37,5 +0,20 5 0,05 (11x) 3 0,05 1,5 1 0,05 0,5 0,02 1 0,05 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- 25 +0,20 53 0,15 L3 L+ 2,1 4,5 12 0,05 4 0,05 (3x) 6 0,05 Surface Mount Device GWM 120-0075X1-SMD 37,5 +0,20 1,5 (11x) 3 0,05 5 0,05 1 0,05 0,5 0,02 R1 0,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 L2 L1 L- L+ 2,1 1 0,05 12 0,05 4,5 25 +0,20 39 0,15 L3 5 0,10 4 0,05 5 2 (3x) 6 0,05 Leads Ordering Straight Standard SMD Standard Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code GWM 120-0075X1 - SL GWM 120-0075X1 Blister 28 505 960 GWM 120-0075X1 - SMD GWM 120-0075X1 Blister 28 505 581 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110407d 3-6 GWM 120-0075X1 250 1,2 VDS = 30 V 1,1 200 1,0 150 ID [A] VDSS [V] Normalized IDSS = 0.25 mA 0,9 100 0,8 50 0,7 -25 0 0 25 50 75 100 125 150 0 1 2 3 4 VGS [V] TJ [C] Fig. 1 Drain source breakdown voltage VDSS vs. junction temperature TVJ 300 250 250 6.5 V 6V 150 5.5 V 100 1 2 3 VDS [V] 4 5 6V 5.5 V 0 6 4 0,4 50 75 100 125 2 150 TJ [C] Fig. 5 Drain source on-state resistance RDS(on) versus junction temperature TJ IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved RDS(ON) Normalized 8 RDS(on) [m] RDS(ON) Normalized RDS(on) 0,8 25 4V 0 1 3,5 10 6 0 4.5 V 4,0 4 V 4.5 V 12 1,6 -25 5V 2 3 VDS [V] 4 5 6 Fig. 4 Typical output characteristic VGE = 10 V ID = 125 A 1,2 RDS(on) normalized 6.5 V 150 Fig. 3 Typical output characteristic 2,0 TJ = 125C 7V 10 V 50 4.5 V 4V 0 7 100 5V 50 6 200 ID [A] ID [A] 200 0 VGS = 20 V 15 V TJ = 25C 7V 5 Fig. 2 Typical transfer characteristic 300 VGS = 20 V 15 V 10 V TJ = 25C TJ = 125C 5V 5.5 V VGS = 10 V ID = 125 A 6V 6.5 V 3,0 TJ = 125C 2,5 2,0 7V 1,5 10 V 1,0 0,5 15 V 20 V 0 50 100 150 ID [A] 200 250 300 Fig. 6 Drain source on-state resistance RDS(on) versus ID 20110407d 4-6 GWM 120-0075X1 14 140 ID = 125 A TJ = 25C 12 120 100 VDS = 15 V VDS = 55 V 6 80 60 4 40 2 20 0 20 40 60 80 100 120 0 140 0 20 40 60 QG [nC] 200 TJ = 125C tr 0.8 0.2 80 800 700 TJ = 125C 0.6 600 0.5 td(off) 0.4 0.3 0.1 0.0 40 Eon 0 20 40 60 80 100 120 0 140 0.0 tf Eoff 0.1 Erec(off) x10 tr VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C 0 20 40 60 td(on) 300 0.50 100 Eon 20 40 60 1.2 50 Erec(off) x10 0 1.4 200 150 0.00 0 140 80 100 0 120 Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching IXYS reserves the right to change limits, test conditions and dimensions. 1600 1400 td(off) 1.0 0.8 0.6 1000 600 Eoff 0.4 tf 0.2 0.0 1200 800 0 20 40 60 80 100 400 200 0 120 RG [] RG [] (c) 2011 IXYS All rights reserved 120 100 1800 VDS = 30 V VGS = +10/0 V ID = 125 A TJ = 125C 1.6 250 0.75 0.25 100 1.8 Eoff [mJ] 1.00 80 200 Fig. 10 Typ. turn-off energy & switching times vs. collector current, inductive switching t [ns] 1.25 400 ID [A] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching 1.50 500 300 0.2 ID [A] Eon, Erec(off) [mJ] 900 RG = 39 0.7 120 Eoff [mJ] td(on) 160 1000 VDS = 30 V VGS = +10/0 V 0.9 RG = 39 0.3 1.0 t [ns] Eon, Erec(off) [mJ] Fig. 8 Drain current ID vs. case temperature TC VDS = 30 V VGS = +10/0 V 0.4 100 120 140 160 180 TJ [C] Fig.7 Gate charge characteristic 0.5 80 t [ns] 0 t [ns] 8 ID - [A] VGS [V] 10 Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 20110407d 5-6 GWM 120-0075X1 70 50 VR = 30 V TVJ = 125C 60 125 A 80A 55 400 600 800 1000 35 40 A 30 25 20 15 40 A 50 1200 10 200 1400 400 600 Fig. 13 Reverse recovery time trr of the body diode vs. di/dt Fig. 14 1.6 VR = 30 V TVJ = 125C 1200 1400 Reverse recovery current IRM of the body diode vs. di/dt 125 A 200 80A 1.0 IS [A] Qrr [C] 1000 250 1.2 40 A 0.8 150 100 TJ = -25C 25C 125C 150C 50 0.6 0.4 800 -diF/dt [A/s] -diF /dt [A/s] 1.4 80 A 40 IRM [A] trr [ns] 65 125 A VR = 30 V TVJ = 125C 45 400 600 800 1000 1200 0 1400 0.0 0.2 0.4 -diF/dt [A/s] Fig. 15 0.6 0.8 1.0 1.2 VSD [V] Fig. 16 Source current IS vs. source drain voltage VSD (body diode) Reverse recovery charge Qrr of the body diode vs. di/dt VGS VDS ID 0.9 VGS t 0.1 VGS 0.9 ID 0.9 ID 0.1 ID td(on) 0.1 ID tr td(off) t tf Thermal Response [K/W] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 GWM 120-0075X1 1 10 100 1000 10000 Time [ms] Fig. 17 Definition of switching times IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved Fig. 18 Typ. therm. impedance junction to heatsink ZthJC 20110407d 6-6